Optical Alignment with X-ray Sources Using Counter Propagating Laser Beams
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73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
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Results for “optical physics”
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Uncovering surface plasmon optical resonances in nanohole arrays through interferometric photoemission electron microscopy
In this work, the role of surface plasmon polaritons (SPPs) in nanohole array optical extinction spectra is explored using a time-resolved technique capable of isolating the air/metal interfacial SPP contribution to the typical Fano profile in optical transmission curves. A pair of interferometrically locked broad-band femtosecond pulses is used to launch SPPs from lithographically patterned plasmonic nanohole arrays. SPPs launched in the co- and counter-propagating directions are probed using a third probe pulse in a photoemission electron microscope. Using this approach, we record interferometric SPP–SPP linear autocorrelations that selectively report on the resonances of SPPs launched from arrays of varying pitches and hole diameters. Aside from advancing an approach to selective SPP spectroscopy, we illustrate that resonant coupling in the counter-propagating direction may be exploited to control the spatial, temporal, and spectral characteristics of SPPs. For the counter-propagating direction, we show that tuning the array pitch near the fundamental plasmon resonance generates color-tuned (~770–820 nm), narrow bandwidth SPPs, and the bandwidth may be controlled by changing the ratio of pitch to hole diameter. The SPP resonances we recover through Fourier transforms of the interferometric autocorrelations shed light on the classical problem of Fano interference in nanohole array extinction spectra.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Spectroscopy of GR1 centers in synthetic diamonds
We report on the spectroscopic characterization, absorption saturation, and excited-state dynamics of GR1 centers in synthetic diamonds. The non-linear optical measurements reveal an efficient bleaching of the GR1 center’s ground level under ns-pulsed 633 nm excitation. The maxima of absorption and emission cross sections were estimated to be 4.5 × 10 −17 cm 2 and 9 × 10 −17 cm 2 at 630 nm and 780 nm, respectively. The radiative lifetime of the excited level was estimated to be 8.5 ns. The 658 nm probe kinetics uncovered relaxation of 1 T 2 excited level going predominantly to a metastable state with a lifetime of 220 μs. An induced absorption detected with the use of a highly concentrated diamond sample could be due to up-conversion and photoionization processes in additional impurity-vacancy center with absorption at the short-wavelength tail of GR1. The results presented here indicate that synthetic diamonds with GR1 centers could serve as near infrared gain media or passive Q-switchers for laser cavities over the 633–750 nm spectral range. Optimization of the center concentration and the crystal parameters are required to minimize the induced absorption at the lasing wavelengths.
36 MATERIALS SCIENCE↗
Next-generation neutron detection using a 6 Li glass scintillator composite
Neutron detectors are crucial in fundamental science, nuclear security, safeguards, and civil applications. 3 He-filled gas proportional counters are the gold standard for thermal neutron detection, prized for their efficiency, neutron/gamma discrimination, and stability; however, the scarcity of 3 He has prompted the search for alternatives. Here, we introduce a neutron detector design based on a scintillating composite consisting of 6 Li glass scintillator particles dispersed in an organic matrix. A detector consisting of this scintillating composite, photomultiplier tubes (PMTs) for optical detection, and electronics for reading out the PMT signal in both pulse and current modes was prototyped and characterized using various neutron and gamma sources. The prototype achieves a measured intrinsic detection efficiency of 6.70 ± 0.01%, a die-away time of 10.3 ± 0.1 μs, a negligible gamma misidentification probability, and response linearity up to at least 3.7 × 10 6 incident neutrons/s established via a cross-calibration technique. This detector holds the potential to outperform traditional 3 He-gas-based neutron detection systems, offering a viable alternative amidst the ongoing 3 He shortage and promising advancements in neutron detection technology.
47 OTHER INSTRUMENTATION↗
Phonon-mediated temperature dependence of Er 3+ optical transitions in Er 2 O 3
Characterization of the atomic level processes that determine optical transitions in emerging materials is critical to the development of new platforms for classical and quantum networking. Such understanding often emerges from studies of the temperature dependence of the transitions. We report measurements of the temperature dependent Er 3+ photoluminescence in single crystal Er 2 O 3 thin films epitaxially grown on Si(111) focused on transitions that involve the closely spaced Stark-split levels. Radiative intensities are compared to a model that includes relevant Stark-split states, single phonon-assisted excitations, and the well-established level population redistribution due to thermalization. This approach, applied to the individual Stark-split states and employing Er 2 O 3 specific single-phonon-assisted excitations, gives good agreement with experiment. This model allows us to demonstrate the difference in the electron-phonon coupling of the 4 S 3/2 and 2 H 11/2 states of Er 3+ in E 2 O 3 and suggests that the temperature dependence of Er 3+ emission intensity may vary significantly with small shifts in the wavelength (~0.1 nm) of the excitation source.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Integrated Silicon Fourier Transform Spectrometer with Broad Bandwidth and Ultra‐High Resolution
An ultra-high resolution Fourier transform spectrometer (FTS) realized in silicon photonic platform that can operate with broad band, narrow band as well as a combination of broad band and narrow band signals is reported. The ultra-high resolution of the spectrometer is achieved by exploiting multiple techniques: a Michelson interferometer (MI) structure to increase the optical path delay (OPD), a hybrid waveguide design to reduce insertion loss, an optimized heater and air trenches to achieve higher thermal efficiency. Here, to further increase the OPD of the spectrometer to increase its resolution, a novel multiple interferometers approach is employed which combines balanced MI with N statically imbalanced MIs, thereby increasing the OPD of a single MI by factor of N + 1. An FTS spectrometer consisting of N = 2 such MIs is fabricated and experimentally characterized using unknown broad bandwidth input signal spectra of about 180 nm centered around 1550 nm, a narrow line laser input signal, and a combination of broad and narrow band signals demonstrating spectral resolution of about 0.16 nm.
Li, Ang↗
Antireflective Multi‐Dielectric Metasurfaces Operating in the Visible
Abstract As increasingly more demanding photonics applications are brought on‐chip, more complex design solutions are employed to deliver enhanced performance: e.g., meta‐molecules, inverse‐designed freeform structures, and multilayer metasurfaces. Instead, this study introduces anti‐reflective metasurfaces fabricated in a single nanolithography step that follows deposition of multiple dielectrics onto a substrate. Anti‐reflective metasurfaces offer fundamentally better transmission efficiencies compared to conventional equivalents. Conventional and anti‐reflective metalenses, both fabricated in the Ta 2 O 5 /SiO 2 material platform for 461 nm operation, show an improvement in focusing efficiencies from ≈ 55% to ≈ 90% at low numerical apertures and from ≈ 35% to ≈ 65% at high numerical apertures. Simulations of ideal and imperfect metalenses indicate that anti‐reflective metasurfaces not only improve transmission at the design library level, but also reduce spurious diffraction and protect against higher‐order scattering.
Optics↗
Large‐Area, High‐Numerical‐Aperture, Freeform Metasurfaces
Abstract Nanophotonic devices are optical platforms capable of unprecedented wavefront control. To push the limits of experimental device performance, scalable design methodologies that combine the simplicity and fabricability of conventional design paradigms with the extended capabilities of freeform optimization are required. A novel gradient‐based design framework for large‐area freeform metasurfaces is introduced in which nonlocal interactions between simply shaped nanostructures, placed on an irregular lattice, are tailored to produce high‐order hybridized modes that support customizable large‐angle scattering profiles. Utilizing this approach, multifunctional super‐dispersive metalenses are designed and experimentally demonstrated. The approach to high‐numerical‐aperture radial metalenses capable of diffraction limited focusing and the generation of donut‐shaped point spread functions is also extended. It is anticipated that these concepts will have utility in super‐resolution microscopy, particle trapping, additive manufacturing, and metrology applications that require ultra‐high numerical apertures.
Optics↗
Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator
Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion-irradiated VO 2 thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO 2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs nonthermally, well below the transition temperature. Here, the results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.
McLaughlin, Nathan J.↗
Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle-Resolved Photoemission Spectroscopy
The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, in this work, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied using a combination of density functional theory (DFT) and angle-resolved photoemission spectroscopy (ARPES). Large-scale first principles simulations are enabled by using DFT calculations with a machine-learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, a “bulk unfolding” scheme is implemented by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, a good agreement is found between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states, which may be detected by ARPES with low photon energies. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. The combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, for example, topological qubits utilizing the Majorana zero modes.
42 ENGINEERING↗
Pairwise‐Parallel Entangling Gates on Orthogonal Modes in a Trapped‐Ion Chain
Abstract Parallel operations are important for both near‐term quantum computers and larger‐scale fault‐tolerant machines because they reduce execution time and qubit idling. This study proposes and implements a pairwise‐parallel gate scheme on a trapped‐ion quantum computer. The gates are driven simultaneously on different sets of orthogonal motional modes of a trapped‐ion chain. This work demonstrates the utility of this scheme by creating a Greenberger‐Horne‐Zeilinger (GHZ) state in one step using parallel gates with one overlapping qubit. It also shows its advantage for circuits by implementing a digital quantum simulation of the dynamics of an interacting spin system, the transverse‐field Ising model. This method effectively extends the available gate depth by up to two times with no overhead when no overlapping qubit is involved, apart from additional initial cooling. This scheme can be easily applied to different trapped‐ion qubits and gate schemes, broadly enhancing the capabilities of trapped‐ion quantum computers.
Optics↗