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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Readout of Oriented Triplet Excitons in Linear Acenes via Room-Temperature Electrically Detected Magnetic Resonance

In this study, optically generated molecular spin centers offer an attractive platform for room-temperature spintronic and quantum applications. The linear acene family of molecules are especially good candidates due to their efficient generation of highly polarized triplet excitons via singlet fission. However, the direct detection and manipulation of these spin centers in thin films via the electrical means desirable for ultimate microelectronic devices has proven challenging. In particular, highly oriented triplet features have previously been detected in crystalline anthracene but longer acenes reveal only doublet features in Electrically-Detected Magnetic Resonance (EDMR). In this work we present EDMR spectra of highly oriented triplet excitons in pentacene for the first time, using a host-guest style device made of tetracene and pentacene. The guest acts as an energetic trap site, permitting the isolation and detection of molecular triplets at room temperature. Modeling of these results shows that the observed resonance features correspond to triplet sublevel transitions on isolated pentacene guest molecules. Rotation of the applied field confirms the tendency of the linear acenes to self-orient with the longest molecular axis perpendicular to the device substrate. Lastly, we find the disappearance of resonant triplet features in the neat acenes is not primarily due to the effects of exciton delocalization, but a broader mechanism of spin relaxation primarily influenced by exciton diffusivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1988

Properties of multiple quantum wells and their use in high-speed detectors and modulators

Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.

Bhattacharya, Pallab↗
DOE OSTI2025

Encapsulation Enhances the Quantum Coherence of a Solid‐State Molecular Spin Qubit

Spins within molecules benefit from the atomistic control of synthetic chemistry for the realization of qubits. One advantage is that the quantum superpositions of the spin states encoding the qubit can be coherently manipulated using electromagnetic radiation. The main challenge is the fragility of these superpositions when qubits are to partake of solid-state devices. We address this issue with a supramolecular approach for protecting molecular spin qubits against decoherence. The molecular qubit [Cr(ox)3]3- has been encapsulated inside the diamagnetic triple-stranded helicate [Zn2L3]4+ (L is a bis-pyrazolylpyridine ligand). The quantum coherence of the protected qubit is then analyzed with pulsed EPR spectroscopy and compared with the unprotected qubit, both in solution and in the solid state. Crucially, the spin-spin relaxation in the solid state has been examined within diamagnetic crystal lattices of the isostructural ([Al(ox)3]@[Zn2L3])+ or [Al(ox)3]3- assemblies, respectively, doped with the Cr3+ qubit in two different (<10%) concentrations. The study unveils a surprising increase of the phase memory time of the qubit upon encapsulation only in the solid. Spin-lattice relaxation times also exhibit a significant enhancement, as established from inversion recovery pulse sequences and from slow relaxation of the magnetization of the protected qubit, not featured by the free qubit.

Swain, Abinash↗
DOE OSTI2020

Ion Transport and Mechanical Properties of Non-Crystallizable Molecular Ionic Composite Electrolytes

Polymer electrolytes show promise as alternatives to conventional electrolytes in energy storage and conversion devices but have been limited due to their inverse correlation between ionic conductivity and modulus. In this study, we examine surface morphology, linear viscoelastic, dielectric and diffusive properties of molecular ionic composites (MICs), materials produced through the combination of a rigid and charged double helical polymer, known as poly(2,2’)-disulfonyl-4,4’benzidine terepthalamide (PBDT), with ionic liquids (ILs). To probe temperature extremes, we incorporate a non-crystallizable IL to allow measurements from to -90 to 200°C. As we increase PBDT weight percentage (wt%), shear moduli increase and do not decay up to 200°C while maintaining room temperature ionic conductivity within a factor of two of the neat IL. We connect diffusion coefficients of IL ions with ionic conductivity through the Haven ratio across a wide temperature range and analyze trends in ion transport based on a relatively high and composition-dependent static dielectric constant. This behavior may result from collective rearrangement of IL ions in these networks. We propose that these properties are driven by a two-phase system in MICs corresponding to IL-rich “puddles” and PBDT-IL associated “bundles” where IL ions form alternating sheaths of cations and anions around each PBDT rod. Furthermore, these polymer-based MIC electrolytes show great promise for use in electrochemical devices that require fast ion transport, high modulus, and a broad thermal window.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Energy conversion and transport in molecular-scale junctions

Molecular-scale junctions (MSJs) have been considered the ideal testbed for probing physical and chemical processes at the molecular scale. Due to nanometric confinement, charge and energy transport in MSJs are governed by quantum mechanically dictated energy profiles, which can be tuned chemically or physically with atomic precision, offering rich possibilities beyond conventional semiconductor devices. While charge transport in MSJs has been extensively studied over the past two decades, understanding energy conversion and transport in MSJs has only become experimentally attainable in recent years. As demonstrated recently, by tuning the quantum interplay between the electrodes, the molecular core, and the contact interfaces, energy processes can be manipulated to achieve desired functionalities, opening new avenues for molecular electronics, energy harvesting, and sensing applications. This Review provides a comprehensive overview and critical analysis of various forms of energy conversion and transport processes in MSJs and their associated applications. We elaborate on energy-related processes mediated by the interaction between the core molecular structure in MSJs and different external stimuli, such as light, heat, electric field, magnetic field, force, and other environmental cues. Key topics covered include photovoltaics, electroluminescence, thermoelectricity, heat conduction, catalysis, spin-mediated phenomena, and vibrational effects. Furthermore, the review concludes with a discussion of existing challenges and future opportunities, aiming to facilitate in-depth future investigation of promising experimental platforms, molecular design principles, control strategies, and new application scenarios.

Charge transport↗
DOE OSTI2025

Neuromorphic heat transport effects in a molecular junction

Understanding energy transport at the nanoscale is an open and fundamental challenge in the molecular sciences with direct implications for the design of new electronics, computing devices, and materials. While nanoscale energy transport under steady-state conditions has been studied extensively, there is much less known about energy transport under time-dependent driving forces, particularly in the far-from-equilibrium regime. In this work, we use nonequilibrium molecular dynamics simulations and stochastic thermodynamics to investigate energy transport in a well-studied nanoscale system—a molecular junction—subjected to a time-periodic temperature gradient. The primary observation is that molecular junctions can exhibit heat transport hysteresis, a phenomenon in which the heat flux through a system depends not only on the instantaneous value of a time-dependent temperature bias but also on the temporal history of that bias. The presented findings illustrate that molecular junctions can exhibit the specific memory effect—heat transport hysteresis—that is essential for the design of thermal neuromorphic computers. This work elucidates a potential pathway toward the realization of such devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Exploring electron beam induced atomic assembly via reinforcement learning in a molecular dynamics environment

We report atom-by-atom assembly of functional materials and devices is perceived as one of the ultimate targets of nanotechnology. Recently it has been shown that the beam of a scanning transmission electron microscope can be used for targeted manipulation of individual atoms. However, the process is highly dynamic in nature rendering control difficult. One possible solution is to instead train artificial agents to perform the atomic manipulation in an automated manner without need for human intervention. As a first step to realizing this goal, we explore how artificial agents can be trained for atomic manipulation in a simplified molecular dynamics environment of graphene with Si dopants, using reinforcement learning. We find that it is possible to engineer the reward function of the agent in such a way as to encourage formation of local clusters of dopants under different constraints. This study shows the potential for reinforcement learning in nanoscale fabrication, and crucially, that the dynamics learned by agents encode specific elements of important physics that can be learned.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

A molecular design approach towards elastic and multifunctional polymer electronics

Next-generation wearable electronics require enhanced mechanical robustness and device complexity. Besides previously reported softness and stretchability, desired merits for practical use include elasticity, solvent resistance, facile patternability and high charge carrier mobility. Here, we show a molecular design concept that simultaneously achieves all these targeted properties in both polymeric semiconductors and dielectrics, without compromising electrical performance. This is enabled by covalently-embedded in-situ rubber matrix (iRUM) formation through good mixing of iRUM precursors with polymer electronic materials, and finely-controlled composite film morphology built on azide crosslinking chemistry which leverages different reactivities with C–H and C=C bonds. The high covalent crosslinking density results in both superior elasticity and solvent resistance. When applied in stretchable transistors, the iRUM-semiconductor film retained its mobility after stretching to 100% strain, and exhibited record-high mobility retention of 1 cm 2 V -1 s -1 after 1000 stretching-releasing cycles at 50% strain. The cycling life was stably extended to 5000 cycles, five times longer than all reported semiconductors. Furthermore, we fabricated elastic transistors via consecutively photo-patterning of the dielectric and semiconducting layers, demonstrating the potential of solution-processed multilayer device manufacturing. The iRUM represents a molecule-level design approach towards robust skin-inspired electronics.

42 ENGINEERING↗
DOE OSTI2026

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗
DOE OSTI2022

The effect of residual palladium on the performance of organic electrochemical transistors

Organic electrochemical transistors are a promising technology for bioelectronic devices, with applications in neuromorphic computing and healthcare. The active component enabling an organic electrochemical transistor is the organic mixed ionic-electronic conductor whose optimization is critical for realizing high-performing devices. In this study, the influence of purity and molecular weight is examined for a p-type polythiophene and an n-type naphthalene diimide-based polymer in improving the performance and safety of organic electrochemical transistors. Our preparative GPC purification reduced the Pd content in the polymers and improved their organic electrochemical transistor mobility by ~60% and 80% for the p- and n-type materials, respectively. These findings demonstrate the paramount importance of removing residual Pd, which was concluded to be more critical than optimization of a polymer’s molecular weight, to improve organic electrochemical transistor performance and that there is readily available improvement in performance and stability of many of the reported organic mixed ionic-electronic conductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Correlative molecular-to-mesoscale evolution in conjugated polymers for intrinsically stretchable organic photovoltaics

Conjugated polymer thin films offer a unique combination of tunable optoelectronic properties and mechanical flexibility, making them as promising materials for intrinsically stretchable optoelectronic devices. However, achieving both mechanical robustness and high device performance remains a key challenge. Addressing this requires a fundamental understanding of how molecular and mesoscale structures evolve under mechanical strain. Here, we employ a comprehensive suite of X-ray spectroscopy and scattering techniques to investigate the multiscale structural evolution of conjugated polymer thin films during uniaxial deformation. We uncover a two-stage morphological response: an initial stage characterized by polymer chain alignment and rapid crystallite disruption, followed by continued chain orientation accompanied by intrachain torsion at higher strains. These correlative structural adaptations govern key material properties, including stress dissipation, optical absorption, and photovoltaic performance. Our findings establish a mechanistic framework for understanding deformation in semiconducting polymers and provide design principles for developing mechanically robust, high-performance stretchable electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Stochastic quantum Krylov protocol with double-factorized Hamiltonians

Here we propose a class of randomized quantum Krylov diagonalization (rQKD) algorithms capable of solving the eigenstate estimation problem with modest quantum resource requirements. Compared to previous real-time evolution quantum Krylov subspace methods, our approach expresses the time evolution operator e –i$\widehat{H}$$\tau$ as a linear combination of unitaries and subsequently uses a stochastic sampling procedure to reduce circuit depth requirements. While our methodology applies to any Hamiltonian with fast-forwardable subcomponents, we focus on its application to the explicitly double-factorized electronic-structure Hamiltonian. To demonstrate the potential of the proposed rQKD algorithm on near-term quantum devices, we provide numerical benchmarks for a variety of molecular systems with circuit-based state-vector simulators including the effects of sampling noise, achieving ground-state energy errors of less than 1 kcal mol -1 with circuit depths orders of magnitude shallower than those required for low-rank deterministic Trotter-Suzuki decompositions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Solid-phase heteroepitaxy of oriented Sb 2 Se 3 on GaAs for birefringent thin films

Here, we investigate the amorphous-to-crystalline transformation of antimony selenide (Sb 2 Se 3 ) on UHV-prepared GaAs (001) substrates. In the bulk orthorhombic form, Sb 2 Se 3 is a layered quasi-1D semiconductor with highly anisotropic properties of interest for optical and electronic devices. We find that an amorphous layer deposited by molecular beam epitaxy annealed at or above 230 °C yields a textured-epitaxial structure among some randomly oriented domains. The textured-epitaxial Sb 2 Se 3 grains are oriented with the covalently bonded “1D axis” constrained in-plane to GaAs [110] and with multiple van der Waals (hk0) orientations out-of-plane. The same texture was achieved exclusively without randomly oriented grains using continuous-wave laser radiation, highlighting the use of thermal and optical methods to yield anisotropic crystalline Sb 2 Se 3 films directly from the amorphous phase. Polarized reflectance and polarized microscopy confirm the unique state of in-plane birefringence in the crystallized thin film. Overall, we show that solid-phase heteroepitaxy provides additional pathways to the integration of low-symmetry chalcogenide semiconductors for demanding applications where the inherent anisotropy needs to be preserved.

Xiao, Kelly [Stanford Univ., CA (United States)] (↗
NASA NTRS1986

Dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor

Extremely large current double interface GaAs/In(0.15)Ga(0.85)As/Al(0.15)Ga(0.85)As pseudomorphic modulation-doped field-effect transistors (MODFET's) grown by molecular beam epitaxy were achieved. The 1-micron gate devices studied have peak current levels (430 mA/mm at 300 K and 483mA/mm at 77 K) roughly one and a half to two times that found in single interface pseudomorphic MODFET's. These devices also retain high transconductances over a broad range of gate voltage, peaking at 312 mS/mm at 300 K and 362 mS/mm at 77 K. Excellent microwave performance is also obtained with a maximum frequency of oscillation (f-max) of 37 GHz and a current gain cut-off frequency of as high as 23 GHz at 300 K. An output power level of 14 dBm (1 dB gain compression) was obtained at 6 GHz for a 290-micron gate width. This double interface single quantum well MODFET may be of great importance in millimeter wave power amplifiers.

Henderson, T.↗
NASA NTRS1990

MBE HgCdTe heterostructure detectors

HgCdTe has been the mainstay for medium (3 to 5 micron) and long (10 to 14 micron) wavelength infrared detectors in recent years. Conventional growth and processing techniques are continuing to improve the material. However, the additional ability to tailor composition and placement of doped layers on the tens of angstroms scale using molecular beam epitaxy (MBE) provides the opportunity for new device physics and concepts to be utilized. MBE-based device structures to be discussed here can be grouped into two categories: tailored conventional structures and quantum structures. The tailored conventional structures are improvements on familiar devices, but make use of the ability to create layers of varying composition, and thus band gap, at will. The heterostructure junction can be positioned independently of doping p-n junctions. This allows the small band gap region in which the absorption occurs to be separated from a larger band gap region in which the electric field is large and where unwanted tunneling can occur. Data from hybrid MBE/liquid phase epitaxy (LPE)/bulk structures are given. Quantum structures include the HgTe-CdTe superlattice, in which the band gap and transport can be controlled by alternating thin layers (tens of angstroms thick) of HgTe and CdTe. The superlattice has been shown to exhibit behavior which is non-alloy like, including very high hole mobilities, two-dimensional structure in the absorption coefficient, resonant tunneling, and anisotropic transport.

Schulman, Joel N.↗
NASA NTRS2012

NASA Tech Briefs, May 2012

Topics covered include: An "Inefficient Fin" Non-Dimensional Parameter to Measure Gas Temperatures Efficiently; On-Wafer Measurement of a Multi-Stage MMIC Amplifier with 10 dB of Gain at 475 GHz; Software to Control and Monitor Gas Streams; Miniaturized Laser Heterodyne Radiometer (LHR) for Measurements of Greenhouse Gases in the Atmospheric Column; Anomaly Detection in Test Equipment via Sliding Mode Observers; Absolute Position of Targets Measured Through a Chamber Window Using Lidar Metrology Systems; Goldstone Solar System Radar Waveform Generator; Fast and Adaptive Lossless Onboard Hyperspectral Data Compression System; Iridium Interfacial Stack - IrIS; Downsampling Photodetector Array with Windowing; Optical Phase Recovery and Locking in a PPM Laser Communication Link; High-Speed Edge-Detecting Line Scan Smart Camera; Optical Communications Channel Combiner; Development of Thermal Infrared Sensor to Supplement Operational Land Imager; Amplitude-Stabilized Oscillator for a Capacitance-Probe Electrometer; Automated Performance Characterization of DSN System Frequency Stability Using Spacecraft Tracking Data; Histogrammatic Method for Determining Relative Abundance of Input Gas Pulse; Predictive Sea State Estimation for Automated Ride Control and Handling - PSSEARCH; LEGION: Lightweight Expandable Group of Independently Operating Nodes; Real-Time Projection to Verify Plan Success During Execution; Automated Performance Characterization of DSN System Frequency Stability Using Spacecraft Tracking Data; Web-Based Customizable Viewer for Mars Network Overflight Opportunities; Fabrication of a Cryogenic Terahertz Emitter for Bolometer Focal Plane Calibrations; Fabrication of an Absorber-Coupled MKID Detector; Graphene Transparent Conductive Electrodes for Next- Generation Microshutter Arrays; Method of Bonding Optical Elements with Near-Zero Displacement; Free-Mass and Interface Configurations of Hammering Mechanisms; Wavefront Compensation Segmented Mirror Sensing and Control; Long-Life, Lightweight, Multi-Roller Traction Drives for Planetary Vehicle Surface Exploration; Reliable Optical Pump Architecture for Highly Coherent Lasers Used in Space Metrology Applications; Electrochemical Ultracapacitors Using Graphitic Nanostacks; Improved Whole-Blood-Staining Device; Monitoring Location and Angular Orientation of a Pill; Molecular Technique to Reduce PCR Bias for Deeper Understanding of Microbial Diversity; Laser Ablation Electrodynamic Ion Funnel for In Situ Mass Spectrometry on Mars; High-Altitude MMIC Sounding Radiometer for the Global Hawk Unmanned Aerial Vehicle; PRTs and Their Bonding for Long-Duration, Extreme-Temperature Environments; Mid- and Long-IR Broadband Quantum Well Photodetector; 3D Display Using Conjugated Multiband Bandpass Filters; Real-Time, Non-Intrusive Detection of Liquid Nitrogen in Liquid Oxygen at High Pressure and High Flow; Method to Enhance the Operation of an Optical Inspection Instrument Using Spatial Light Modulators; Dual-Compartment Inflatable Suitlock; Large-Strain Transparent Magnetoactive Polymer Nanocomposites; Thermodynamic Vent System for an On-Orbit Cryogenic Reaction Control Engine; Time Distribution Using SpaceWire in the SCaN Testbed on ISS; and Techniques for Solution- Assisted Optical Contacting.

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