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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films

Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg 1/3 Nb 2/3 )O- 3 -PbTiO 3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation, which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary. Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a reduction in their piezoelectric response due to clamping by the passive substrate. To understand the microscopic behavior of this adverse phenomenon, we employ the AC electric field driven in-operando synchrotron x-ray diffraction on patterned device structures to investigate the piezoelectric domain behavior under an electric field for both a clamped (001) PMN-PT thin film on Si and a (001) PMN-PT membrane released from its substrate. In the clamped film, the substrate inhibits the field-induced rhombohedral (R) to tetragonal (T) phase transition resulting in a reversible R to Monoclinic (M) transition with a reduced longitudinal piezoelectric coefficient d 33 < 100 pm/V. Releasing the film from the substrate results in recovery of the R to T transition and results in a d 33 > 1000 pm/V. Here, using diffraction with spatial mapping, we find that lateral constraints imposed by the boundary between the active and inactive materials also inhibit the R to T transition. Phase-field calculations on both clamped and released PMN-PT thin films simulate our experimental findings. Resolving the suppression of thin film piezoelectric response is critical to their application in piezo-driven technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Design and testing of a high perveance sheet beam electron gun

This paper presents the design, prototype engineering, and initial testing of a relatively low-voltage, high aspect ratio electron gun for versatile pulsed power applications. The sheet beam, diode electron gun is designed for (23–25) kV voltage and 6 µA/V1.5, as is required for x-band klystron, as a part of a compact Klylac delivering electron beam energy in the MeV range. The gun prototype was engineered, built, and tested using a Scandinova M1-0.5 modulator. Beam loss on the anode aperture is evaluated from transient waveforms and equivalent circuit modeling.

Instruments & Instrumentation↗
DOE OSTI2022

Correlated nanoelectronics and the second quantum revolution

The growing field of correlated nanoelectronics exists at the intersection of two established fields: correlated oxide electronics and semiconductor nanoelectronics. The development of quantum technologies that exploit quantum coherence and entanglement for the purposes of computation, simulation, and sensing will require complex material properties to be controlled at nanoscale dimensions. Heterostructures and nanostructures formed at the interface between LaAlO 3 and SrTiO 3 exhibit striking behavior that arises from the ability to program the conductive behavior at extreme nanoscale dimensions. The active electronic layer, SrTiO 3 , exhibits a wide range of gate-tunable phenomena such as ferroelectricity, ferroelasticity, magnetism, superconductivity, and spin–orbit coupling, all of which can be controlled at the nanoscale using two reversible methods: conductive atomic force microscope lithography and ultra-low-voltage electron beam lithography. Mesoscopic devices such as single-electron transistors and quasi-one-dimensional electron waveguides can be “sketched” using these techniques, and the properties of these devices differ significantly from those created from traditional semiconductors, such as Si or GaAs. The strongly correlated nature of the SrTiO 3 system is evident from superconducting behavior as well as a state in which electrons are paired outside the superconducting state. A highly exotic phase was discovered in which a degenerate quantum liquid is formed from bound states of n = 2, 3, 4, … electrons. Further development of correlated nanoelectronics based on the LaAlO 3 /SrTiO 3 system can potentially lead to a general platform for quantum simulation as well as a pathway for the development of highly entangled states of multiple photons.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ferroelectric behavior of sputter deposited Al 0.72 Sc 0.28 N approaching 5 nm thickness

Ferroelectric Al 1-x Sc x N has raised much interest in recent years due to its unique ferroelectric properties and complementary metal oxide semiconductor back-end-of-line compatible processing temperatures. Potential applications in embedded nonvolatile memory, however, require ferroelectric materials to switch at relatively low voltages. One approach to achieving a lower switching voltage is to significantly reduce the Al 1-x Sc x N thickness. In this work, ferroelectric behavior in 5-27 nm films of sputter deposited Al 0.72 Sc 0.28 N has been studied. We find that the 10 kHz normalized coercive field increases from 4.4 to 7.3 MV/cm when reducing the film thickness from 27.1 to 5.4 nm, while over the same thickness range, the characteristic breakdown field of a 12.5 μm radius capacitor increases from 8.3 to 12.1 MV/cm. In conclusion, the 5.4 nm film demonstrates ferroelectric switching at 5.5 V when excited with a 500 ns pulse and a switching speed of 60 ns.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Study of carbon nanotube embedded honey as a resistive switching material

In this paper, natural organic honey embedded with carbon nanotubes (CNTs) was studied as a resistive switching material for biodegradable nonvolatile memory in emerging neuromorphic systems. CNTs were dispersed in a honey-water solution with the concentration of 0.2 wt% CNT and 30 wt% honey. The final honey-CNT-water mixture was spin-coated and dried into a thin film sandwiched in between Cu bottom electrode and Al top electrode to form a honey-CNT based resistive switching memory (RSM). Surface morphology, electrical characteristics and current conduction mechanism were investigated. The results show that although CNTs formed agglomerations in the dried honey-CNT film, both switching speed and the stability in SET and RESET process of honey-CNT RSM were improved. The mechanism of current conduction in CNT is governed by Ohm’s law in low-resistance state and the low-voltage range in high-resistance state, but transits to the space charge limited conduction at high voltages approaching the SET voltage.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Measurements of Single Event Upset in ATLAS IBL

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Production and testing of the powerboard for ATLAS ITk Strip barrel modules

The upgrade of the ATLAS ITk strips detector for HL-LHC will employ a custom PCB (powerboard) for on-module DC-DC conversion, HV switching, and monitoring. Production of about 14100 of such PCBs with high reliability is a big challenge. In this paper we will present the production procedure and quality control (QC) testing system for the powerboards to be installed on ITk Strip barrel modules. During production, about 150 powerboards will be produced every week. Each powerboard will need to pass QC tests before they are assembled to module. The QC tests include thermal cycling between -35 °C and 40 °C, soak test (continuous running of DC-DC converter at high load at 20 °C), and basic functionality and characterization electrical tests of the low voltage (LV), high voltage (HV), and monitoring functions of the powerboard. A custom QC test system is described, which is based on a reusable PCB (active board) with all testing circuits, a one-time powerboard carrier card, and a Z-turn SoC board which hosts and runs the testing program. The production procedure and QC test system has been tested with 400 powerboards during pre-production, and the system has been proven ready for production with the desired testing program, speed, safety, and cost. Performance and typical failures of powerboards observed during the QC test of pre-production powerboards is also presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations

The end of Dennard scaling, which facilitated proportional increases in computing power without added energy costs until the mid-2000s, has underscored the urgent need for innovative semiconductor devices that can enhance energy efficiency. Tunnel field-effect transistors (TFETs) have emerged as promising candidates to surpass the energy efficiency of conventional metal oxide semiconductor field-effect transistors (MOSFETs). Unlike MOSFETs, which rely on thermionic emission to overcome the source-channel potential barrier, TFETs operate through quantum tunneling, potentially enabling sub-60 mV dec −1 subthreshold swing (SS) for low-voltage operation. However, lateral TFETs have faced challenges in achieving adequate on-state current (I ON ) and a broad SS operation window, limiting their practical utility. This review article advocates for areal TFETs, which utilize face-to-face tunnel junctions that ideally offer step-function current turn-on characteristics and allow I ON to scale with device area rather than width. We highlight recent advancements in integrating 2D materials into tunneling structures, which could facilitate efficient band-to-band tunneling through atomically thin layers, while addressing challenges of gate field screening. We then discuss the nearer-term prospects of epitaxial areal TFETs comprising III–V compound semiconductors and group-IV semiconductors based on recent experimental progress. The review examines both quantum mechanical and semiclassical modeling approaches for TFETs, including techniques to reduce the computational complexity. The article delves into ongoing challenges in material synthesis, interface engineering, device fabrication, and integration pathways, concluding with recommendations for future research directions to overcome the fundamental power density limitations of conventional transistor technology.

2D materials↗
DOE OSTI2023

Design of a Multi-Chemistry Battery Pack System for Behind-the-Meter Storage Applications

Battery management systems (BMS) are essential for a battery pack's safe operation and longevity. This paper presents an active balancing method-based BMS for different cell chemistry structures to be used in behind-the-meter storage (BTMS) applications. The proposed system utilizes modular isolated dual active bridge (DAB) DC/DC converters to actively balance the battery pack through a low voltage (LV) bus. A supervisory controller monitors all the cell voltage, current, and state of charge (SOC) values. Based on the estimation of the SOCs, reference currents for the DAB converters are generated by the supervisory controller. Detailed modeling and the control approach of the modular DAB converters are presented in the paper. Moreover, the control strategy of the supervisory control is also analyzed. The proposed method and structure can be extended to any combination of the number of cells to design the battery pack. Simulation results are provided for a system consisting of three cells in parallel to form a cell block and three cell blocks in series to form the battery module. Experimental results are provided for three modular DAB converters operating with a LiFeMnPO4 prismatic cell with 3.2V, 20Ah rated values.

battery management systems↗
DOE OSTI2023

Controller Verification of a Smart-Grid Compatible 200 kHz Single-stage Photovoltaic Microinverter

This paper presents control system design, implementation, and experimental validation of a single-stage 400 W, 200 kHz solar photovoltaic (PV) microinverter using hardware-in-the-loop (HIL) and hardware testing. The selected circuit topology is based on a Gallium Nitride (GaN) direct-matrix based dual active bridge (DAB) converter with a low voltage active power decoupler (APD) circuit. Control performance is verified, smart-grid compatibility is tested, and circuit operation is confirmed. Controller HIL (CHIL) is shown to aid in a complex power electronics system design by 1) enabling detailed control development prior to hardware implementation, 2) expanding the use of automated testing, and 3) increasing confidence in control performance prior to prototype testing. Altogether, these factors make HIL a valuable tool in complex power electronic designs.

14 SOLAR ENERGY↗
DOE OSTI2022

3D Frequency Domain Reflectometry Digital Twin of an Electrical Cable: A First Glance

Electrical cables within nuclear power plants (NPPs) are critical components required for power, control, and instrumentation systems which may be exposed to stressors, such as elevated temperatures and gamma radiation. Such stressors can lead to a reduction in the remaining useful life of electrical cables, jeopardizing the safety of NPP systems. To evaluate the effect of stressors on the degradation of electrical cables, electrical reflectometry methods are commonly employed. Frequency domain reflectometry (FDR) is a non-destructive electrical reflectometry method that uses transmission line theory to detect degradation or impedance changes within electrical cables. However, in most cases FDR is only applied to de-energized cables, limiting the application in NPPs as the cable system must be taken offline. In this work, we explore the development of an FDR digital twin to predict the degradation of an electrical cable exposed to elevated temperature, which is expected to reduce the need for offline FDR. A 3-conductor low-voltage electrical cable was selected for evaluation of the digital twin. The fully three-dimensional digital twin was developed in COMSOL using the RF module. A cable length of 30-m and frequency bandwidth of 400 MHz was selected to mimic real-world application of FDR. Over a 1-m region, the permittivity of the insulation was varied by up to 20% to model thermal degradation. The results demonstrate accurate detection of the insulation damage region, supporting further investigation of the FDR digital twin using real-world data and machine learning for predictive damage estimation or remaining lifetime.

Spencer, Mychal P.↗
DOE OSTI2020

Design Optimization for Weighted Conduction Loss Minimization in a Dual-Active-Bridge-Based PV Microinverter

This manuscript presents a harmonic-superposition based frequency-domain approach for analysis and optimal design of a single-stage DAB-based DC-AC converter used in low-voltage DC to high voltage AC applications, such as PV microinverter. Specifically, two topological variations and correspondingly different modulation strategies involving up to four control variables (three phase shifts and switching frequency) are analyzed. Optimal trajectories of control variables are determined that result in minimized transformer RMS current at a given average power, while enforcing near-uniform ZVS. To make the design process holistic, an outer optimization loop is used to determine optimal values for the power transfer inductance (integrated as the transformer’s leakage inductance) and turns ratio, which minimize the weighted-average conduction loss contribution to the microinverter’s CEC efficiency. Based on the optimization analyses, a 400 W microinverter prototype is built and experimental results at one operating point are presented, achieving a measured efficiency of 92.8%.

14 SOLAR ENERGY↗
DOE OSTI2023

Active SOC Balancing for a Multi-Chemistry Battery Pack with Reduced Number of Converters

In energy storage systems using second-life or multi-chemistry cells, an active state of charge (SOC) balancing system can prolong pack life and enhance performance by utilizing the healthier cells more than those which are heavily degraded. However, the high cost of the active balancing system, particularly in converter-based solutions, prevents their widespread usage. Considering this, existing research has proposed numerous balancing systems utilizing only one converter. However, such systems may compromise the balancing speed too much. Therefore, this work proposes two active balancing systems with a reduced number of converters for 14-16 series-connected cells. One system uses two converters for direct cell-to-cell balancing. The other uses a time-multiplexed approach to exchange energy via an auxiliary low-voltage (LV) bus using four converters. The proposed balancing systems are compared to two baseline systems, a single converter cell-to-cell balancing system, and a 14 converter balancing system with an auxiliary LV bus.

battery pack↗
DOE OSTI2023

Design, Optimization, and Validation of GaN-Based DAB Converter for Active Cell Balancing in BTMS Applications

This paper focuses on the design of a bidirectional dual active bridge (DAB) DC/DC converter that utilizes Gallium Nitride (GaN) switches as active components. In the existing literature, MOSFET-based DAB for active cell balancing is available, but GaN-based DAB converter for active cell balancing is still new. The proposed modular isolated GaN-based DAB converter is designed as an individual module of active cell balancing for behind-the-meter storage (BTMS) applications, targeting high-power charging stations. Modular isolated converters are connected to each cell (low voltage bus), and each cell is connected in series to build up a battery module. According to the reference current command of supervisory control, each DAB converter can transfer power back and forth through the high voltage (HV) bus to balance the State of Charge (SoC) between the cells. Each module DAB converter is designed at a 50 W power rating. Switch power and transformer losses are analyzed for different switching frequencies, showing the optimum switching frequency for minimum losses. Furthermore, the procedure to select the required gate driver and the PCB layout optimization are discussed. Finally, the DAB performance analysis of GaN-based DAB and Si-based DAB is provided for a battery module operating with a LiFeMnPO4 prismatic cell with 3.2V 20Ah rated values.

active cell balancing↗
DOE OSTI2021

Event-Based Analysis of Solar Power Distribution Feeder Using Micro-PMU Measurements

Solar distribution feeders are commonly used in solar farms that are integrated into distribution substations. In this paper, we focus on a real-world solar distribution feeder and conduct an event-based analysis by using micro-PMU measurements. The solar distribution feeder of interest is a behind-the-meter solar farm with a generation capacity of over 4 MW that has about 200 low-voltage distributed photovoltaic (PV) inverters. The event-based analysis in this study seeks to address the following practical matters. First, we conduct event detection by using an unsupervised machine learning approach. For each event, we determine the event’s source region by an impedancebased analysis, coupled with a descriptive analytic method. We segregate the events that are caused by the solar farm, i.e., locallyinduced events, versus the events that are initiated in the grid, i.e., grid-induced events, which caused a response by the solar farm. Second, for the locally-induced events, we examine the impact of solar production level and other significant parameters to make statistical conclusions. Third, for the grid-induced events, we characterize the response of the solar farm; and make comparisons with the response of an auxiliary neighboring feeder to the same events. Fourth, we scrutinize multiple specific events; such as by revealing the dynamics to the control system of the solar distribution feeder. The results and discoveries in this study are informative to utilities and solar power industry.

14 SOLAR ENERGY↗
DOE OSTI2023

A Novel Scalable Array Design for III-V Compound Semiconductor-based Nonvolatile Memory (UltraRAM) with Separate Read-Write Paths

The dream of achieving a universal memory that can provide robust non-volatile memory states along with low-energy operation has been the key driving force of memory research. Despite dominating the memory market, conventional charge-based memories cannot satisfy these requirements. However, UltraRAM, an oxide-free charge-based memory cell, aims to achieve both of these requirements. This device achieves non-volatility (with an endurance of over 10 7 cycles and a retention of over 1000 years) along with switching at low-voltage (±2.3 V) utilizing a triple-barrier resonant tunneling (TBRT) structure made of InAs/AlSb. In this work, we propose an array design for UltraRAM-based memory devices. Our proposed memory array features separate read-write path and eliminates the possibility of accidentally switching the memory states stored in the array. Moreover, our design allows us to read all the cells in a column in one cycle without imposing any limit on the scalability. Besides, since the read operation in our proposed design is independent of the write mechanism, there is flexibility to optimize the read operation for memory and in-memory computing applications.

Alam, Shamiul↗
DOE OSTI2020

Optimized Highly Efficient SSCB Using Organic Substrate Packaging for Electric Vehicle Applications

Solid State Circuit Breakers (SSCBs) are an attractive protection solution for their arcless current interruption and fast actuation speeds over mechanical breakers. This paper proposes a Bidirectional SSCB (BSSCB) with a thermally defined and digitally controlled current time profile for fault protection in EV and other low-voltage DC systems. The paper proposes an organic packaging approach utilizing flex circuitry to develop a reliable, cost-effective power module for BSSCBs. The paper studies transient heat transfer in the power modules using finite element analysis (FEA). An RC themal ladder network is extracted to define a fusing curve. To demonstrate and verify the design, a 1kV/50 A SiC MOSFET BSSCB prototype is fabricated and tested, having a power density of 60 W/cm3 and 4x reduction in form factor over presently researched breakers. Also, given are results for 750 V/150 A operation showing interruption in 2.4 μs.

organic power packaging↗