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At least 253 records · Page 14

Kinetics of Moisture Sorption and Reverse Bias Degradation in Chip Tantalum Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 ºC. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

Teverovsky, Alexander↗

Kinetics of Moisture Sorption and Reverse Bias Degradation in Chip Tantalum Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 C. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

Teverovsky, Alexander↗

Reliability Issues with PME and BME Ceramic Capacitors

This work is a review of reliability issues specific for low-voltage precious metal electrode (PME) and base metal electrode (BME) multilayer ceramic capacitors (MLCC). A special attention is given to degradation and failures in capacitors with defects, in particular with cracks. Temperature and voltage reliability acceleration factors have been calculated based on approximation of distributions of degradation rates of leakage currents using a general log-linear Weibull model. Results show a substantial difference in behavior of BME and PME capacitors with defects. Mechanisms of degradation and failures in humid and dry environments and risks of overstressing capacitors during highly accelerated life testing (HALT) are discussed.

Teverovsky, Alexander↗

OMH3075 Hall Effect Sensor Total Ionizing Dose Test Report

The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated.

Forney, James↗

MT29F512G08AUCBBH8-6IT:B NAND Flash Memory Total Ionizing Dose Test Report

The purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.

TID↗

Screening and Qualification of BME Feedthrough Capacitors for a Space Project

Surface mount technology feedthrough ceramic capacitors are gaining popularity in Hi-Rel systems due to small size and great filtering characteristics. In this work, BME feedthrough capacitors compliant with AEC-Q200 requirements have been evaluated, screened and qualified for a space project. Evaluation included analysis of the effect of post-soldering thermal shocks, temperature dependencies of leakage currents, distribution of breakdown voltages, assessments of high-current capability, and thermal resistance of the parts. The parts have been screened and qualified at conditions close to the military requirements for ceramic capacitors. No failures were detected during screening including burning-in, but two samples failed during monitored 2000 hour life testing at 125C and two times rated voltage. Failure analysis revealed manufacturing defects that required additional analysis of screening and qualification test conditions. Highly accelerated life testing (HALT) has been carried out to assess reliability acceleration factors and the probability of failure at the use conditions. An approach to selection of adequate burning-in and life test conditions is discussed.

Alexander Teverovsky↗

Screening and Qualification of BME Feedthrough Capacitors for a Space Project

Surface mount technology feedthrough ceramic capacitors are gaining popularity in Hi-Rel systems due to small size and great filtering characteristics. In this work, BME feedthrough capacitors compliant with AEC-Q200 requirements have been evaluated, screened and qualified for a space project. Evaluation included analysis of the effect of post-soldering thermal shocks, temperature dependencies of leakage currents, distribution of breakdown voltages, assessments of high-current capability, and thermal resistance of the parts. The parts have been screened and qualified at conditions close to the military requirements for ceramic capacitors. No failures were detected during screening including burning-in, but two samples failed during monitored 2000 hour life testing at 125C and two times rated voltage. Failure analysis revealed manufacturing defects that required additional analysis of screening and qualification test conditions. Highly accelerated life testing (HALT) has been carried out to assess reliability acceleration factors and the probability of failure at the use conditions. An approach to selection of adequate burning-in and life test conditions is discussed.

Alexander Teverovsky↗

Si5345, SY88422L, LT3482, and MSK130 components Total Ionizing Dose Test Report

The purpose of this test was to characterize the SI-5345, SY88422L, LT3482 and MSK130 parameter degradation for total dose response. The components are associated with REAG ID #21-024. In the test, each device was exposed to high dose rate (HDR) irradiation using gamma radiation. Device parameters such as leakage currents, timing, and overall chip health were investigated. These devices were tested for an interstellar mission on a trajectory between 0.9 AU and 5.3 AU with a 2.5-year mission, yielding an expected overall dose of 29 krad(Si)behind 1 mm of aluminum shielding (at 95% confidence; environment and dose determined through SPENVIS). This test report gives an initial look at candidate parts. Extremely small sample sizes (only 1 or 2 devices tested) do not allow consideration of part-to-part variability. High dose rates were used despite LT3482 and MSK130 having potential enhanced low dose rate sensitivity (ELDRS). Care should be taken in interpreting results given these limitations.

Total Ionizing Dose (TID)↗

Nonvolatile read/write memory element - A concept

Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.

Cricchi, J. R.↗

2D Quantum Transport Modeling in Nanoscale MOSFETs

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on an equal footing. Electron bandstructure is treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are consistent with 1D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller leakage current than the longer gate length device without a significant trade-off in on-current.

Svizhenko, Alexei↗

Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

Non-NASA Center↗

Clipper for High-Impedance Current-Drive Line

New circuit leakage reduced by shunting current through saturated input at operational-amplifier follower already part of Howland, or equivalent, current source. Typical application is in circuit of germanium resistance thermometer in cryogenic system.

Woodhouse, Christopher E.↗

Ephemeral Electric Potential and Electric Field Sensor

Systems, methods, and devices of the various embodiments provide for the minimization of the effects of intrinsic and extrinsic leakage electrical currents enabling true measurements of electric potentials and electric fields. In an embodiment, an ephemeral electric potential and electric field sensor system may have at least one electric field sensor and a rotator coupled to the electric field sensor and be configured to rotate the electric field sensor at a quasi-static frequency. In an embodiment, ephemeral electric potential and electric field measurements may be taken by rotating at least one electric field sensor at a quasi-static frequency, receiving electrical potential measurements from the electric field sensor when the electric field sensor is rotating at the quasi-static frequency, and generating and outputting images based at least in part on the received electrical potential measurements.

Generazio, Edward R.↗

Evaluation of Series T22 Wet Tantalum Capacitors

Several types of advanced wet tantalum capacitors, and series T22 in particular, are designed without internal Teflon sealing that is used for military grade, CLR style capacitors. This raises concerns regarding hermeticity of the single seal parts and their capability to withstand high internal gas pressures that might develop during operation in space. To address these issues, T22 series capacitors rated to 50 V and 125 V were subjected to highly accelerated life testing (HALT) at 125 C and rated voltage and step stress random vibration testing (RVT). To simulate conditions of storage or operation under increased internal gas pressure, the parts were stored at temperature of 150 C for 2500 hr (HTS150). Electrical characteristics of the parts were measured through the storage testing and the hermeticity leak rate was tested before and after HTS150. To assess thermo-mechanical robustness of the part, capacitors were manually soldered onto printed wired boards (PWB) and stressed by 1000 temperature cycles between -55 C and +125 C. The effect of temperature cycling was assessed by additional HALT at different temperatures. Results show that T22 series capacitors have robust design and can satisfy requirements for space applications.

Wet tantalum capacitors↗

Integrated circuit electrometer and sweep circuitry for an atmospheric probe

The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

Zimmerman, L. E.↗

A Wide Bandwidth Model for the Electrical Impedance of Magnetic BearingS

Magnetic bearings are often designed using magnetic circuit theory. When these bearings are built, however, effects not included in the usual circuit theory formulation have a significant influence on bearing performance. Two significant sources of error in the circuit theory approach are the neglect of leakage and fringing effects and the neglect of eddy current effects. This work formulates an augmented circuit model in which eddy current and flux leakage and fringing effects are included. Through the use of this model, eddy current power losses and actuator bandwidth can be derived. Electrical impedance predictions from the model are found to be in good agreement with experimental data from a typical magnetic bearing.

Meeker, David C.↗

New Insights on Subsurface Imaging of Carbon Nanotubes in Polymer Composites via Scanning Electron Microscopy

Despite many studies of subsurface imaging of carbon nanotube (CNT)-polymer composites via scanning electron microscopy (SEM), significant controversy exists concerning the imaging depth and contrast mechanisms. We studied CNT-polyimide composites and, by threedimensional reconstructions of captured stereo-pair images, determined that the maximum SEM imaging depth was typically hundreds of nanometers. The contrast mechanisms were investigated over a broad range of beam accelerating voltages from 0.3 to 30 kV, and ascribed to modulation by embedded CNTs of the effective secondary electron (SE) emission yield at the polymer surface. This modulation of the SE yield is due to non-uniform surface potential distribution resulting from current flows due to leakage and electron beam induced current. The importance of an external electric field on SEM subsurface imaging was also demonstrated. The insights gained from this study can be generally applied to SEM nondestructive subsurface imaging of conducting nanostructures embedded in dielectric matrices such as graphene-polymer composites, silicon-based single electron transistors, high resolution SEM overlay metrology or e-beam lithography, and have significant implications in nanotechnology.

Zhao, Minhua↗