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At least 253 records · Page 14

Comprehensive demonstration of spin Hall Hanle effects in epitaxial Pt thin films

In this work, we demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al 2 O 3 substrates. This Hall effect and the previously demonstrated Hanle magnetoresistance provide a complete picture of the spin-precession control of the spin and charge transport at the boundary of a spin-orbit coupled material, which we refer to as spin Hall Hanle effects (SHHE). We also show that the SHHE can be employed to measure the spin diffusion length, the spin Hall angle, and the spin relaxation time of heavy metal without the need of magnetic interface or the input from other measurements. The comprehensive demonstration of SHHE in such a simple system suggests they may be ubiquitous and needs to be considered for unraveling the spin and charge transport in more complex thin-film structures of spin-orbit coupled materials.

36 MATERIALS SCIENCE↗

Recent progress in MnBi2 n Te3 n +1 intrinsic magnetic topological insulators: crystal growth, magnetism and chemical disorder

ABSTRACT The search for magnetic topological materials has been at the forefront of condensed matter research for their potential to host exotic states such as axion insulators, magnetic Weyl semimetals, Chern insulators, etc. To date, the MnBi2nTe3n+1 family is the only group of materials showcasing van der Waals-layered structures, intrinsic magnetism and non-trivial band topology without trivial bands at the Fermi level. The interplay between magnetism and band topology in this family has led to the proposal of various topological phenomena, including the quantum anomalous Hall effect, quantum spin Hall effect and quantum magnetoelectric effect. Among these, the quantum anomalous Hall effect has been experimentally observed at record-high temperatures, highlighting the unprecedented potential of this family of materials in fundamental science and technological innovation. In this paper, we provide a comprehensive review of the research progress in this intrinsic magnetic topological insulator family, with a focus on single-crystal growth, characterization of chemical disorder, manipulation of magnetism through chemical substitution and external pressure, and important questions that remain to be conclusively answered.

36 MATERIALS SCIENCE↗

Physical properties of intergrowth compound Eu 2 CuZn 2 P 3

Here, the physical properties of single-crystalline Eu 2 ⁢CuZn 2 ⁢P 3 were inspected via thermodynamic, transport, and neutron diffraction measurements. Eu 2 ⁢ CuZn 2⁢ P 3 is composed of EuCuP and EuZn 2 ⁢ P 2 motifs stacked in a one-to-one ratio. The magnetic response of Eu 2 ⁢ CuZn 2 ⁢ P 3 is similar to that of EuZn 2 ⁢ P 2 in its A-type antiferromagnetic (semiconducting) state. A Néel temperature of T N = 40.3K is obtained from the specific heat capacity. Single-crystal neutron diffraction reveals a (001) magnetic propagation vector, with primarily in-plane moments coupled along [001] in an up-up-down-down pattern. This spin structure retains the ferromagnetic EuCuP motifs and antiferromagnetic coupling across the EuZn 2 ⁢P 2 motifs. The electrical resistivity is characterized by metallic behavior above 100 K, an increase in ρ upon cooling below ≈ 75K, and a large negative magnetoresistance below T N . First principles calculations evidence a narrow band gap for antiferromagnetic ordering and semimetallic behavior for the ferromagnetic state. This is consistent with the observed effect of magnetic field on the electrical resistivity. Hall effect measurements reveal a field-induced, negative anomalous Hall effect that increases on cooling down to 2 K. Also, an unconventional contribution to the Hall effect dominates the low-field Hall signal, particularly near T N , and is similar in appearance to a topological Hall effect. However, further work is necessary to understand if any of the transport properties have topological origins or if magnetism-induced modifications to the Fermi surface induce these unusual Hall effect signals in this and related materials.

36 MATERIALS SCIENCE↗

"Hall" transport of liquid crystal solitons in Couette flow

Topology establishes a unifying framework for a diverse range of scientific areas including particle physics, cosmology, and condensed matter physics. One of the most fascinating manifestations of topology in the context of condensed matter is the topological Hall effect, and its relative: the Skyrmion Hall effect. Skyrmions are stable vortex-like spin configurations in certain chiral magnets, and when subject to external electric currents can drift in the transverse direction to the current. These quasi-particles are characterised by a conserved topological charge which in the Skyrmion Hall effect plays the role of electric charges in the ordinary Hall effect. Recently, it has been shown that liquid crystals endowed with chiral properties serve as an ideal testbed for the fundamental investigation of topological solitons, including their two- and three-dimensional realisations. Here, we show experimentally and numerically that three-dimensional solitons aka "torons" exhibit a Hall-like effect when driven by shear flows: the torons are deflected in the direction perpendicular to the shear plane. The experimental results are rationalised in terms of the dynamic Ericksen-Leslie equations, which predict the emergence of the transverse component of the net mass flow, the magnitude of which scales as the 3rd power of the shear rate. The perturbation analysis highlights an interplay of the viscous and chiral elastic torques as the mechanism for the emergence of net transverse currents. Numerical simulations demonstrate, however, that torons are not merely dragged by the flow but move with their own transverse speed, much larger than the average flow velocity in the transverse direction. Our findings may enable responsive microfluidic applications relying on soft topological solitons.

FOS: Physical sciences↗

Orbital Inverse Faraday and Cotton-Mouton Effects in Hall Fluids

We report two light-induced orbital magnetization effects in quantum Hall (QH) fluids, stemming from their transverse response. The first is a purely transverse contribution to the inverse Faraday effect (IFE), where circularly polarized light induces a dc magnetization by stirring the charged fluid. This contribution dominates the IFE in the QH regime. The second is the orbital inverse Cotton-Mouton effect (ICME), in which linearly polarized light generates a dc magnetization. Since the applied field in the ICME does not break time-reversal symmetry, the induced magnetization directly probes the chiral orbital response of the fluid at the driving frequency. We estimate that the resulting magnetization lies in the range of 0.5–10 Bohr magnetons per charge carrier in materials such as graphene and transition-metal dichalcogenides (TMDs) in the QH regime. Finally, we show that the induced magnetization is accompanied by a local correction to the static particle density, enabling optical quantum printing of density profiles into the QH fluid.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum field theory of topological spin dynamics

Here, we develop a field theory of quantum magnets and magnetic (semi)metals, which is suitable for the analysis of their universal and topological properties. The systems of interest include collinear, coplanar, and general noncoplanar magnets. At the basic level, we describe the dynamics of magnetic moments using smooth vector fields in the continuum limit. Dzyaloshinskii-Moriya interaction is captured by a non-Abelian vector gauge field, and chiral spin couplings related to topological defects appear as higher-rank antisymmetric tensor gauge fields. We distinguish type-I and type-II magnets by their equilibrium response to the non-Abelian gauge flux, and characterize the resulting lattices of skyrmions and hedgehogs, the spectra of spin waves, and the chiral response to external perturbations. The general spin-orbit coupling of electrons is similarly described by non-Abelian gauge fields, including higher-rank tensors related to the electronic Berry flux. Itinerant electrons and local moments exchange their gauge fluxes through Kondo and Hund interactions. Hence, by utilizing gauge fields, this theory provides a unifying physical picture of “intrinsic” and “topological” anomalous Hall effects, spin-Hall effects, and other correlations between the topological properties of electrons and moments. We predict “topological” magnetoelectric effect in materials prone to hosting hedgehogs. Links to experiments and model calculations are provided by deriving the couplings and gauge fields from generic microscopic models, including the Hubbard model with spin-orbit interactions. Much of the formal analysis is generalized to d spatial dimensions in order to access the $π_{d–1}(S^{d–1})$ homotopy classification of the magnetic hedgehog topological defects, and establish the possibility of novel quantum spin liquids that exhibit a fractional magnetoelectric effect. However, we emphasize the form of all results in the physically relevant $\textit{d}$ = 3 dimensions, and discuss a few applications to topological magnetic conductors like Mn 3 Sn and Pr 2 Ir 2 O 7 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Two-fluid theory of composite bosons and fermions and the quantum Hall proximity effect

Here we propose a two-fluid description of fractional quantum Hall systems, in which one component is a condensate of composite bosons and the other a Fermi liquid formed by composite fermions (or simply electrons). We employ the theory to model the interface between a fractional quantum Hall liquid and a (composite) Fermi liquid metal, where we find a penetration of quantum Hall condensate into the metallic region reminiscent of the proximity effect in superconductor-metal interfaces. We also find a novel and physically reasonable set of gapped quasielectron and neutral modes in fractional quantum Hall liquids.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large spin-to-charge conversion in ultrathin gold-silicon multilayers

Investigation of the spin Hall effect in gold has triggered increasing interest over the past decade, since gold combines the properties of a large bulk spin-diffusion length and strong interfacial spin-orbit coupling. However, discrepancies between the values of the spin Hall angle of gold reported in the literature have brought into question the microscopic origin of the spin Hall effect in Au. Here, we investigate the thickness dependence of the effective spin-charge conversion efficiency in single Au films and ultrathin Au/Si multilayers by nonlocal transport and spin-torque ferromagnetic resonance measurements. We show that the inferred effective spin-charge conversion efficiency is strongly enhanced in ultrathin Au/Si multilayers, reaching exceedingly large values of 0.99 ± 0.34 when the thickness of the individual Au layers is scaled down to 2 nm. These findings reveal the coexistence of a strong interfacial spin-to-charge conversion effect, which becomes dominant in ultrathin Au, and bulk spin Hall effect with a relatively low bulk spin Hall angle of 0.012 ± 0.005. Furthermore, our experimental results suggest the key role of the intrinsic spin Hall effect enhancement along with a strong interfacial spin-orbit coupling-related effect in the large spin-to-charge conversion in ultrathin Au.

36 MATERIALS SCIENCE↗

Planar Hall Driven Torque in a Ferromagnet/Nonmagnet/Ferromagnet System

An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilayer is used as a spin current source in a sample with structure CoNi/Au/CoFeB. Spin torque ferromagnetic resonance is used to measure the torque on the CoFeB layer. The response as a function of the applied field angle and current is consistent with the symmetry expected for a torque produced by the planar Hall effect originating in CoNi. We find the strength of this effect to be comparable to that of the spin Hall effect in platinum, indicating that the planar Hall effect holds potential as a spin current source with a controllable polarization direction.

ferromagnetic resonance↗

Optical conductivity of multi-Weyl node semimetals due to electromagnetic and axial pseudogauge fields

Here, we compute the optical conductivity of a multi-Weyl semimetal in the presence of electromagnetic and axial fields. In the first part of the paper we use a U(1) gauge field to compute the current of a multi-Weyl semimetal. The current is used in the computation of the optical conductivity within the Kubo-Matsubara formalism. We consider a multi-Weyl semimetal with two nodal points in the z-direction. The multi-Weyl semimetal has a width D in the transverse direction which is smaller than the length L in the longitudinal direction. Due to the width D we replace the model by a sum of transverse modes in 1+1 dimensions. We then regularize the model in 1+1 dimensions. The nodal points are responsible for a constant axial field and a static anomalous Hall effect. In the second part we study the effect of dynamic axial fields. An elastic deformation couples to the two electronic chiralities, and represents the axial pseudogauge field $\vec{a}$ 5 . As a consequence, the system is excited by two kinds of field, the electromagnetic one and the axial srain field. For a Weyl system this is represented by the triangle diagram, which is responsible for the anomalous Hall effect. We can obtain the anomalous Hall effect also by a chiral transformation in 1+1 dimensions using regularization. The chiral transformation modifies the path integration measure and is the source of the induced anomalous Hall effect. The latter is controlled by a combination of strain waves and electromagnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Unconventional Hall response in the quantum limit of HfTe 5

Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three-dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe 5 , adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Growth, characterization, and Chern insulator state in MnBi 2⁢ Te 4 via the chemical vapor transport method

As the first intrinsic antiferromagnetic topological insulator, MnBi 2 Te 4 has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi 2 Te 4 , as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi 2 Te 4 via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi 2 Te 4 is marked with higher Mn occupancy on the Mn site, slightly higher Mn Bi antisites, smaller carrier concentration, and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm 2 V s in MnBi 2 Te 4 devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Furthermore, our study provides a route to obtain high-quality single crystals of MnBi 2 Te 4 that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous Hall effect, etc.

36 MATERIALS SCIENCE↗

Manipulating topological Hall-like signatures by interface engineering in epitaxial ruthenate/manganite heterostructures

Topologically protected non-trivial spin textures (e.g. skyrmions) give rise to a novel phenomenon called the topological Hall effect (THE) and have promising implications in future energy-efficient nanoelectronic and spintronic devices. Here, we have studied the Hall effect in SrRuO 3 /La 0.42 Ca 0.58 MnO 3 (SRO/LCMO) bilayers. Our investigation suggests that pure SRO has hard and soft magnetic characteristics but the anomalous Hall effect (AHE) in SRO is governed by the high coercivity phase. Here, we have shown that the proximity effect of a soft magnetic LCMO on SRO plays a critical role in interfacial magnetic coupling and transport properties in SRO. Upon reducing the SRO thickness in the bilayer, the proximity effect becomes the dominant feature, enhancing the magnitude and temperature range of THE-like signatures. The THE-like features in bilayers can be explained by a diffusive Berry phase transition model in the presence of an emergent magnetic state due to interface coupling. This work provides an alternative understanding of THE-like signatures and their manipulation in SRO-based heterostructures, bilayers and superlattices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Disorder, interactions, and their interplay in novel narrow-gap Dirac materials and Weyl semimetals

Progress of the modern day condensed matter physics is to a large extent driven by the synthesis of new materials, advances in their experimental characterization and theoretical description. Recent discoveries of novel gapless Weyl semimetals, such as NaBi,CdAs, and BiTe-based films, in which magnetic dopants essentially suppress the gap, have added to the family of graphene and topological insulators actively investigated over the past decade. With the field of novel semimetals rapidly maturing, its focus necessarily shifts from demonstrations of the feasibility of such materials to their quantitative characterization. While the transport and optical properties of graphene and topological insulators are well captured within the picture of free non-interacting electrons, gapless 3D Weyl semimetals and narrow-gap 2D semiconductors with Dirac spectrum are known to be extremely susceptible to disorder and electron-electron interactions. This susceptibility obscures the manifestations of nontrivial band structure -- like quantum anomalous Hall effect -- of the new topological materials. Among particular projects to be addressed are: 1) optical conductivity of 3D gapless Dirac fermions in the presence of smooth disorder, 2) interplay of disorder and Coulomb interactions in the spectral properties of such fermions, 3) formation and structure of the impurity band with Coulomb supercritical clusters, 4) Coulomb interaction-driven renormalization of the electron spectrum and of the transport response in the presence of strong magnetic field, 5) instanton approach to the disorder-induced fluctuation states in zero-gap 3D materials, and 6) the role of disorder in quantum anomalous Hall effect. The proposal relies upon the investigators' previous broad expertise in interacting and disordered electron systems. The methods to be employed include perturbative diagrammatic technique, non-perturbative instanton and self-consistent approximations, hydrodynamics of electron liquid. Both analytical as well as numerical approaches are to be employed. The anticipated broader outcome of the proposal includes gaining an in-depth understanding of the interplay of the disorder and interactions under the conditions when this interplay has the most dramatic impact on observables. Traditionally, interaction effects are among the most challenging and interesting problems of condensed matter physics. Similarly, disordered systems typically present very difficult but extremely rich problems in the description of various materials. Importantly, understanding the spectral and transport properties of such materials not only presents the fundamental objective, but is also of particular interest for many applications, such as computation, memory, optics, plasmonics. In particular realization of the quantum anomalous Hall effect may lead to the development of low-power-consumption electronics. Indeed, a major constraint for practical use of the quantum Hall effect is limited by the requirement of the quantizing magnetic field. At the same time, the quantum anomalous Hall effect samples exhibit non-dissipative edge quantum transport in a zero magnetic field.

36 MATERIALS SCIENCE↗

THz-range Faraday rotation in the Weyl semimetal candidate Co 2 TiGe

The Co 2 family of ferromagnetic Heusler alloys has attracted interest due to their fully spin-polarized nature, making them ideal for applications in spintronic devices. More recently, the existence of room temperature time-reversal-breaking Weyl nodes near the Fermi level was predicted and confirmed in these systems. As a result of the presence of these Weyl nodes, these systems possess a non-zero momentum space Berry curvature that can dramatically influence transport properties such as the anomalous Hall effect. One of these candidate compounds is Co 2 TiGe. Recently, high-quality molecular beam epitaxy-grown thin films of Co 2 TiGe have become available. In this work, we present a THz-range measurement of MBE-grown Co 2 TiGe films. We measure the THz-range Faraday rotation, which can be understood as a measure of the anomalous Hall effect. We supplement this work with electronic band-structure calculations showing that the principal contribution to the anomalous Hall effect in this material stems from the Berry curvature of the material. Overall, our work shows that this class of Heusler materials shows promise for Weyl semimetal based spintronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗