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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS2019

Body of Knowledge (BOK): Gallium Nitride (GaN) Power Electronics for Space Applications

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This presentation summarizes a body of knowledge (BOK) document in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The presentation also discusses GaN's applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Boomer, Kristen↗
NASA NTRS2021

Development of Gallium Nitride Monolithic Microwave Integrated Circuits for Ka-Band Remote Sensing

We have been developing gallium nitride (GaN)monolithic microwave integrated circuits (MMICs) towards thegoal of implementing a single chip transceiver frontend forcloud radar arrays at Ka-band. We present our first iterationdesign, fabrication and test cycle implementation of GaN poweramplifiers (PAs), low noise amplifiers (LNAs), driver amplifier,single-pole- double and triple throw switches, and voltagecontrolled attenuator. These components are necessary forimplementing a transceiver unit cell concept with digitalcalibration capabilities to enable scalable array sizes for radarand radiometry.

Cao, Yu↗
DOE OSTI2020

Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Rapid synthesis of gallium alloys

The ability to generate complex gallium alloys using metal amides, Ga(NR 2 ) 3 and M(NR 2 ) n , is easily accomplished by heating the two metal amides in predetermined ratios. The product can be isolated as Ga x M y where x and y can vary.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Simulation of gallium nitride vertical fin-shaped field effect transistor for use as thermal neutron detector

Through the use of a radiation detection system simulation framework, a gallium nitride vertical fin-shaped field effect transistor (FinFET) was studied for output response when utilized as a thermal neutron detector. The FinFET was assumed to had been backfilled with boron carbide, reactive to thermal neutrons. The GaN FinFET was modeled with radiation transport from MCNP, and the electronic transport from COMSOL Multiphysics. Fabricated FinFET devices (not neutron reactive) were tested to aid in the tuning of the COMSOL FinFET model. Through time-depenent studies, the drain current response pulse to simulated ionization due to single events lead to building of a database of device responses to radiation. By integrating the current pulses over time, the induced charge was calculated. Using the results of the radiation transport PTRAC file in combination with the induced charge database, an integrated charge spectrum was calculated.

Davidson, Bryce L.↗
DOE OSTI2024

Perovskite Grown in Gallium Nitride Nanowire Matrix for Stable and High‐Efficiency X‐Ray Detection

High-quality quasi-2D perovskites in a GaN nano-wire matrix are grown to build a 3D hetero-structure for high-performance X-ray sensing. In the 3D hetero-structure, GaN nano-wire matrix serves as an n-type charge collector that can rapidly extract carriers through the bulk film of the perovskite layer. Together with a p-type top electrode, a p–i–n diode with the 3D hetero-structure is built, that exhibits a rectified current–voltage characteristic. After analyzing the interface energy alignment, it is found that the fermi levels of the perovskite and GaN are aligned in the dark, and a quasi-fermi level splits upon illumination, introducing a built-in electrical field at the interface. As a result, strong photo-induced current is observed from the diode without an external field. Finally, the 3D diode for X-ray detection demonstration is used, revealing a sensitivity of 308.9 µC Gy air -1 cm -2 at an exceptionally low applied field of 0.125 V µm -1 . The X-ray-induced signal from the 3D diode is stable after 155 cycles of X-ray irradiation under a constant electric field. This demonstration informs a new 3D architecture for high-performance X-ray sensing, and it shows that GaN is a robust n-type interface for perovskite optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Gallium‐Doping Effects on Structure, Lithium‐Conduction, and Thermochemical Stability of Li 7‐3 x Ga x La 3 Zr 2 O 12 Garnet‐Type Electrolytes

Abstract One of the most promising electrolytes for all‐solid‐state lithium batteries is Li 7 La 3 Zr 2 O 12 . Previously, their thermodynamic stability, Li‐ion conductivity, and structural features induced by Ga‐doping have not been empirically determined or correlated. Here, their interplay was examined for Li 7−3 x Ga x La 3 Zr 2 O 12 with target x Ga=0, 0.25, 0.50, 0.75, and 1.00 atoms per formula unit (apfu). Formation enthalpies, obtained with calorimetry and found to be exothermic at all compositions, linearly decreased in stability with increased x Ga. At dilute x Ga substitution, the formation enthalpy curve shifted stepwise endothermically, and the conductivity increased to a maximum, coinciding with 0.529 Ga apfu. This correlated with percolation threshold analysis (0.558 Ga apfu). Further substitution (0.787 Ga apfu) produced a large decrease in the stability and conductivity due to a large increase in point defects and blocked Li‐migration pathways. At x Ga=1.140 apfu, a small exothermic shift was related to defect cluster organization extending the Li hopping distance and decreased Li‐ion conductivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Investigation of Gallium–Boron Spin-On Codoping for poly-Si/SiO x Passivating Contacts

A doping technique for p-type poly-Si/SiOx passivating contacts using a spin-on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV oc , contact resistivity ..rho..c) are investigated. For all as-annealed samples at different drive-in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV oc (from ~680 to ~610 mV) and increment in ..rho..c (from ~3 to ~800 mO cm 2 ). After a hydrogenation treatment by depositing a SiN x /AlO x stack followed by forming gas annealing, all samples show improved iVoc (~700 mV with Ga-B co-doped, and ~720 mV with all Ga). Interestingly, when co-doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary-ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically-active Ga and B in the poly-Si and Si layers. Overall, these results help understand the different features of the two dopants: a low ρ c with B, a good passivation with Ga, their degree of activation inside the poly-Si and Si layers, and the annealing effects.

14 SOLAR ENERGY↗
DOE OSTI2021

The gallium isotopic composition of the Moon

Here, in this study, we present new Ga isotope data from a suite of 28 mare basalts and lunar highland rocks. The δ 71 Ga values of these samples range from -0.10 to +0.66‰ (where δ 71 Ga is the relative difference between the 71 Ga/ 69 Ga ratio of a sample and the Ga-IPGP standard), which is an order of magnitude more heterogeneous than δ 71 Ga values in terrestrial magmatic rocks. The cause of this isotopic heterogeneity must be established to estimate the bulk δ 71 Ga value of the Moon. In general, low-Ti basalts and ferroan anorthosite suite (FAS) rocks have δ 71 Ga values that are lower than high-Ti basalts and KREEP-rich rocks. The observation that rocks derived from later forming LMO cumulates have higher δ 71 Ga values suggests that Ga isotopes are fractionated by processes that operate within the chemically evolving LMO, rather than localized degassing or volatile redistribution. Correlations between indices of plagioclase removal from the LMO (e.g. Eu/Eu*) with Ga isotope ratios suggest that a Δ 71 Ga plagioclase-melt of -0.3‰, (where Δ 71 Ga plagioclase-melt is the isotopic fractionation associated with crystallization of plagioclase from a melt), could drive the observed isotopic fractionation in high-Ti mare basalts and KREEP-rich rocks. This would be consistent with the observation that FAS rocks have δ 71 Ga values that are lower than mare basalts. However, the addition of KREEP-like material into the mare basalt source regions would not contribute enough Ga to perturb the isotopic composition outside of analytical uncertainty. Thus, basalts derived from early formed LMO cumulates such as those from Apollo 15, would preserve light Ga isotopic compositions despite containing modest amounts of urKREEP. We estimate that the δ 71 Ga value of the LMO was ~0.14‰ prior to the onset of plagioclase crystallization and extraction. Whether this δ 71 Ga value is representative of the initial BSM cannot be ascertained from the current dataset. It remains plausible that the Moon accreted with a heavier Ga isotopic composition than the Earth. Alternatively, the Moon and Earth could have accreted with similar isotopic compositions (BSE = 0.00 ± 0.06‰, Kato et al., 2017) and volatile loss drove the LMO to higher δ 71 Ga values prior to formation of the lunar crust.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

The gallium solar neutrino capture cross section revisited

Solar neutrino flux constraints from the legacy GALLEX/GNO and SAGE experiments continue to influence contemporary global analyses of neutrino properties. The constraints depend on the neutrino absorption cross sections for various solar sources. Following recent work updating the 51 Cr and 37 Ar neutrino source cross sections, we reevaluate the 71 Ga solar neutrino cross sections, focusing on contributions from transitions to 71 Ge excited states, but also revising the ground-state transition to take into account new 71 Ge electron-capture lifetime measurements and various theory corrections. The excited-state contributions have been traditionally taken from forward-angle (𝑝, 𝑛) cross sections. Here we correct this procedure for the ≈ 10%–20% tensor operator contribution that alters the relationship between Gamow-Teller and (𝑝, 𝑛) transition strengths. Using state-of-the-art nuclear shell-model calculations to evaluate this correction, we find that it lowers the 8 B and hep neutrino cross sections. However, the addition of other corrections, including contributions from near-threshold continuum states that radiatively decay, leads to an overall increase in the 8 B and hep cross sections of ≈ 10% relative to the values recommended by Bahcall. Uncertainties are propagated using Monte Carlo simulations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Gallium Oxide Techno-Economic Analysis for the Wide Bandgap Semiconductor Market

More than 30% of electrical energy passes through power electronics today with speculation that in the next decade this could grow to 80%. The wide bandgap semiconductor market is already approaching $1 billon USD in 2019 and is projected to be almost $7 billion USD in 2028. Even with its high cost, SiC, is starting to dislodge the incumbent Si technology in some applications, such as hybrid and electric vehicles, due to smaller size, and higher efficiency. We review and report the IHS Markit’s market predictions for wide bandgap semiconductor technologies, and highlight the technoeconomic analysis results for the manufacturing cost of Ga2O3 wafers. Specifically, we focus on the potential for Ga2O3 to be more economically advantageous than SiC using current manufacturing methods and then identify opportunities where research can further reduce the volume cost of Ga2O3 wafers.

28 EE - Advanced Manufacturing Office (EE-5A)↗