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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Characterization of n-Type Iodine-Doped and Indium-Doped CdTe/Cd-Se-Te Thin Films Fabricated by Close-Spaced Sublimation Epitaxy

In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.

cadmium compounds↗
DOE OSTI2026

Harnessing Chemical Short‐Range Disorder to Improve Lithium Retention in Epitaxial LLTO Solid‐Electrolyte Thin Films

Lithium lanthanum titanate Li 3x La 2/3-x TiO 3 (LLTO) is a promising perovskite-based solid-state electrolyte for next-generation lithium-ion batteries, but controlling crystallinity and Li stoichiometry in thin-film form is challenging because high growth temperatures are required to achieve good crystallinity while Li remains strongly volatile. Here, we systematically investigate the effect of substrate temperature on epitaxial LLTO thin films grown by pulsed laser deposition. We identify a narrow growth window (750–800°C) in which LLTO films grow as c-axis oriented with atomically flat surfaces. Lower growth temperatures (<750°C) stabilize laterally extended, chemically disordered stripe domains that coexist with ordered LLTO regions, whereas higher temperatures (≥825°C) suppress these defects but promote island morphologies and Al/Ti interdiffusion. While spectroscopy measurements show that Ti remains in the 4+ oxidation state and Li is globally deficient for all films, our depth-resolved time-of-flight secondary ion mass spectrometry studies reveal that the 700°C film retains the highest Li content across its thickness. These results clarify how growth temperature controls crystallinity, chemical short-range disorder, and Li retention, and highlight moderate growth temperatures (∼700°C) as a route to mitigate Li loss in epitaxial solid-electrolyte films.

chemical short-range disorder↗
DOE OSTI2022

Growth of ultrathin Bi 2 Se 3 films by molecular beam epitaxy

Bi 2 Se 3 is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decreases to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi 2 Se 3 may exhibit quantum spin Hall states. However, growing coalesced ultrathin Bi 2 Se 3 films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi 2 Se 3 films having thicknesses down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pretreatment—growing and decomposing a few layers of Bi 2 Se 3 before the actual deposition—is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Altogether, coalesced ultrathin Bi 2 Se 3 films with lower surface roughness enable thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Study of the structure, structural transition, interface model, and magnetic moments of CrN grown on MgO(001) by molecular beam epitaxy

Structural phase transition is studied in high quality CrN thin films grown by molecular beam epitaxy on MgO(001) substrates. Cross-sectional transmission electron microscopy and x-ray diffraction reveal that the epitaxial relationship between CrN film and MgO substrate is [100] CrN /[100] MgO , [110] CrN /[110] MgO , and [001] CrN /[001] MgO . The films show tensile strain/compression at the CrN/MgO(001) interface, which relaxes gradually with the film growth. Temperature dependent x-ray diffraction measurements show a first-order structural phase transition. In addition to the experimental measurements, first-principles theoretical calculations have been carried out for finding a stable model for the CrN/MgO interface. Furthermore, these calculations determine two possible models for the interface, where a monolayer of chromium oxide is formed between the CrN and MgO layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers

The results of studies of the spontaneous photoluminescence and stimulated emission spectra of epitaxial n-InN layers with a concentration of free electrons of ~10{sup 19} cm{sup –3} are reported. The layers are grown by molecular-beam epitaxy with the plasma activation of nitrogen on sapphire substrates with AlN and GaN buffer layers. It is found that, as the InN layers are grown under conditions with enrichment with nitrogen at a growth temperature elevated to 470°C close to the beginning of the decomposition of InN, the crystal quality of the layers is improved and the stimulated-emission threshold is lowered. As the conditions of growth change to conditions with enrichment with the metal, two emission bands separated by an energy of 100 meV are observed in the spontaneous-photoluminescence spectra of InN. For such layers, a substantial increase in the stimulated-emission threshold and, in some cases, the lack of a transition to stimulated emission are observed. In the study, an interpretation of the observed emission bands is given and some inferences as to their nature are made.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions

We report the results of systematic Raman spectroscopy studies of Al{sub x}Ga{sub 1 –x}N (x ~ 0.75) layers grown using plasma-assisted molecular beam epitaxy at various stoichiometric conditions and growth fluxes. The high-intensity asymmetric low-frequency peak obeying Bose statistics is discovered in Raman spectra of the layers grown by temperature-modulated epitaxy at strongly Ga-enriched conditions. Theoretical model is developed to explain the origin and the high intensity of the observed low-frequency peak, which is attributed to the presence of excessive metallic gallium in AlGaN layers and can be explained by vibrations of gallium clusters with a diameter of ~1 nm. The nature of the low-frequency peak is similar to that of the boson peak in glasses, which occupies the same frequency range in Raman spectra. We demonstrate the capabilities of Raman spectroscopy as an express and non-destructive technique for optimization of growth conditions of AlGaN layers to achieve simultaneously the atomically-smooth droplet-free surface morphology and the high structural quality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum

We have studied the structure of epitaxial graphene obtained as a result of thermal desorption of the silicon carbide surface under conditions of vacuum synthesis and in Ar medium by reflection electron diffraction. As a result of the study, a significantly more uniform buffer layer coating of the SiC surface by epitaxial graphene has been found when forming in inert medium on the surface of 4H- and 6H-SiC(0001) polytypes compared with the synthesis of graphene in high vacuum. The quality of the coating has been shown to depend on the degree of perfection of the original single crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Near surface structure of ultrathin epitaxial Ru films on graphene/amorphous SiO 2 revealed by azimuthal RHEED

Ru has been considered as an alternative metallic candidate for future local interconnects. The 2D reciprocal space map constructed from the azimuthal reflection high-energy electron diffraction patterns reveals that ultrathin Ru(0001) is epitaxially grown on transferred graphene on amorphous SiO 2 through quasi-van der Waals interaction. The in-plane and out-of-plane lattice constants are measured from streaks’ separation and intensity modulations along streaks, respectively. Weak and broad rings indicate that a low density of nanoscale polycrystals exist on the surface. In this work, The intensities of 00 and non-00 diffraction spots vs. azimuthal angles in the 2D map show a few degrees out-of-plane and in-plane angular misorientations among grains, respectively. As the film thickness decreases these angular misorientations increase. Transmission electron microscopy carried out in this study also provides precise values of lattice constant and sub-grain sizes in the films. These findings show that ultrathin Ru film is epitaxial but not exactly single crystalline.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Crystal Symmetry Engineering in Epitaxial Perovskite Superlattices

Interface plays a critical role in determining the physical properties and device performance of heterostructures. Traditionally, lattice mismatch, resulting from the different lattice constants of the heterostructure, can induce epitaxial strain. Over past decades, strain engineering has been demonstrated as a useful strategy to manipulate the functionalities of the interface. However, mismatch of crystal symmetry at the interface is relatively less studied due to the difficulty of atomically structural characterization, particularly for the epitaxy of low symmetry correlated materials on the high symmetry substrates. Overlooking those phenomena restrict the understanding of the intrinsic properties of the as- determined heterostructure, resulting in some long-standing debates including the origin of magnetic and ferroelectric dead layers. Here, perovskite LaCoO 3 -SrTiO 3 superlattice (SL) is used as a model system to show that the crystal symmetry effect can be isolated by the existing interface strain. Combining the state-of-art diffraction and electron microscopy, it is found that the symmetry mismatch of LaCoO 3 -SrTiO 3 SL can be tuned by manipulating the SrTiO 3 layer thickness to artificially control the magnetic properties. Furthermore, the work suggests that crystal symmetry mismatch can also be designed and engineered to act as an effective strategy to generate functional properties of perovskite oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. Here, in this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m -1 K -1 for 25.5–133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron–phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron–phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ionic‐Liquid‐Gating‐Induced Hydrogenation in Epitaxial Strontium Ferrite

Abstract Incorporating hydrogen into complex oxides holds promise for discovering exotic phenomena and novel functionalities by promoting couplings between ion and lattice/charge/spin/orbital degrees of freedom. Here, electrolyte gating‐driven hydrogenation is investigated in epitaxial brownmillerite SrFeO 2.5 thin films in which the hydrogenation‐induced lattice distortion is qualitatively different from its counterpart SrCoO 2.5 . The achievable lattice expansion in hydrogenated SrFeO 2.5 is weaker than in SrCoO 2.5 and primarily occurs along the normal of the stacked octahedral FeO 6 and tetrahedral FeO 4 layers. Upon the substitution of Fe with Co, the lattice expansion monotonically increases with increase of Co/Fe ratio, implying an intrinsic difference in accommodating hydrogen between Fe‐ and Co‐based brownmillerites. Moreover, a net magnetic moment in hydrogenated SrFeO 2.5 films is observed above room temperature, which gradually weakens with the increase of Co substitution, suggesting a stronger canted magnetism in Fe‐based hydrogenated brownmillerites. This work clarifies the electrolyte gating‐driven hydrogenation mechanisms in brownmillerite SrFeO 2.5 epitaxial thin films and those with Co substitution, particularly the deterministic role of Co/Fe ratio in the evolution of structure and properties upon hydrogenation.

Chemistry↗
DOE OSTI2019

Anomalous Defect Dependence of Thermal Conductivity in Epitaxial WO 3 Thin Films

Lattice defects typically reduce lattice thermal conductivity, which has been widely exploited in applications such as thermoelectric energy conversion. Here, an anomalous dependence of the lattice thermal conductivity on point defects is demonstrated in epitaxial WO 3 thin films. Depending on the substrate, the lattice of epitaxial WO 3 expands or contracts as protons are intercalated by electrolyte gating or oxygen vacancies are introduced by adjusting growth conditions. Surprisingly, the observed lattice volume, instead of the defect concentration, plays the dominant role in determining the thermal conductivity. In particular, the thermal conductivity increases significantly with proton intercalation, which is contrary to the expectation that point defects typically lower the lattice thermal conductivity. The thermal conductivity can be dynamically varied by a factor of ≈1.7 via electrolyte gating, and tuned over a larger range, from 7.8 to 1.1 W m -1 K -1 , by adjusting the oxygen pressure during film growth. The electrolyte-gating-induced changes in thermal conductivity and lattice dimensions are reversible through multiple cycles. These findings not only expand the basic understanding of thermal transport in complex oxides, but also provide a path to dynamically control the thermal conductivity.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Altermagnetic Band Splitting in 10 nm Epitaxial CrSb Thin Films

Altermagnets are a newly identified family of collinear antiferromagnets with a momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Néel transition temperature of around 700 K. Molecular beam epitaxy is used to synthesize CrSb (0001) thin films with thicknesses ranging from 10 to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a bulk-type, 3D momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the ∼10 nm thin film limit at room temperature.

Santhosh, Sandra↗
DOE OSTI2021

Digital Tuning of the Transition Temperature of Epitaxial VO 2 Thin Films on MgF 2 Substrates by Strain Engineering

Abstract Straining the vanadium dimers along the rutile c ‐axis can be used to tune the metal‐to‐insulator transition (MIT) of VO 2 but has thus far been limited to TiO 2 substrates. In this work VO 2 /MgF 2 epitaxial films are grown via molecular beam epitaxy (MBE) to strain engineer the transition temperature ( T MIT ). First, growth parameters are optimized by varying the synthesis temperature of the MgF 2 (001) substrate ( T S ) using a combination of X‐ray diffraction techniques, temperature dependent transport, and soft X‐ray photoelectron spectroscopy. It is determined that T S values greater than 350 °C induce Mg and F interdiffusion and ultimately the relaxation of the VO 2 layer. Using the optimized growth temperature, VO 2 /MgF 2 (101) and (110) films are then synthesized. The three film orientations display MITs with transition temperatures in the range of 15–60 °C through precise strain engineering.

Howard, Sebastian A.↗
DOE OSTI2022

Epitaxially crystallized polyethylene exhibiting near‐equilibrium melting temperatures*

Abstract The morphology and orientation of polymer crystals are important factors which determine the performance of thin‐film, polymer‐based technologies such as organic electronic devices and gas separation membranes. Here, we utilize polymer‐substrate epitaxy to achieve a highly oriented crystalline morphology during thin‐film processing. To accomplish this, we employ matrix‐assisted pulsed laser evaporation (MAPLE), a slow physical vapor deposition process, to deposit linear polyethylene epitaxially atop a graphene substrate. Via MAPLE, we demonstrate the ability to achieve a film morphology comprised of well‐aligned, edge‐on crystalline lamellae. Furthermore, we show that MAPLE can be exploited to grow crystalline lamellae composed entirely of extended polymer chains which exhibit a near‐equilibrium melting temperature. Our study demonstrates that MAPLE, as a bottom‐up approach, can deposit polymer thin films with improved control over crystalline morphology.

Wang, Yucheng↗
DOE OSTI2021

Electrically Pumped Epitaxially Regrown GaSb-Based Type-I Quantum-Well Surface-Emitting Lasers with Buried High-Index-Contrast Photonic Crystal Layer

Epitaxially regrown electrically pumped photonic crystal surface-emitting lasers (PCSELs) emitting near 2 and 2.6 μm are designed, fabricated, and characterized. A high-index-contrast photonic crystal layer is incorporated into the GaSb-based laser heterostructure by air-hole-retaining epitaxial regrowth. A square lattice of triangular holes is etched in the top waveguide core layer of the incomplete laser heterostructure. The nanopatterned surface is subsequently cleaned and regrown with AlGaAsSb p-cladding material. Transmission electron microscopy studies demonstrate uniform regrowth over the nanopatterned GaSb surface. The selected regrowth regimes yield a buried 2D array of elongated air-holes. The diode PCSELs based on moderately etched nanopatterns demonstrate band-edge lasing near 2 μm up to room temperatures. The cascade diode PCSELs operate near 2.6 μm with minimum threshold current densities of about 500 A cm -2 achieved at 180 K. The devices generate mW level output in narrow divergence beam emitted from the window in substrate contact. The angle-resolved electroluminescence measurements reveal a four-sub-band band structure with an apparent photonic bandgap corresponding to the buried high-index-contrast square photonic crystal layer. Finally, the PCSELs made of heterostructures supporting two modes in the vertical direction demonstrate two sets of sub-bands showing anti-crossing-like interaction.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Quantifying Equiaxed vs Epitaxial Solidification in Laser Melting of CMSX-4 Single Crystal Superalloy

The competition between epitaxial vs. equiaxed solidification has been investigated in CMSX-4 single crystal superalloy during laser melting as practiced in additive manufacturing. Single-track laser scans were performed on a powder-free surface of directionally solidified CMSX-4 alloy with several combinations of laser power and scanning velocity. Electron backscattered diffraction (EBSD) mapping facilitated identification of new orientations, i.e., “stray grains” that nucleated within the fusion zone along with their area fraction and spatial distribution. Using high-fidelity computational fluid dynamics simulations, both the temperature and fluid velocity fields within the melt pool were estimated. This information was combined with a nucleation model to determine locations where nucleation has the highest probability to occur in melt pools. In conformance with general experience in metals additive manufacturing, the as-solidified microstructure of the laser-melted tracks is dominated by epitaxial grain growth; nevertheless, stray grains were evident in elongated melt pools. It was found that, though a higher laser scanning velocity and lower power are generally helpful in the reduction of stray grains, the combination of a stable keyhole and minimal fluid velocity further mitigates stray grains in laser single tracks.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A Discrete Dendrite Dynamics Model for Epitaxial Columnar Grain Growth in Metal Additive Manufacturing with Application to Inconel

Epitaxial columnar grain growth is a prevalent microstructural feature in the additive manufacturing (AM) of metal components such as Inconel, with cubic unit cell crystal lattice structure (face centered cubic (FCC) or body centered cubic (BCC)). These columnar grains evolve from the partly molten grains in the substrate or the solidified metal. This work proposes an efficient model to simulate the competitive growth of epitaxial columnar dendritic grains. The proposed model tracks the dynamic changes in the dendrites emanating from discrete points along the solid/liquid interface of a quasi-steady melt pool (MP). These dynamic changes include convergence and divergence of growing dendrites. The model is extended to predict the microstructure of large 3D parts and experimentally validated by comparing the simulation results for laser powder bed fusion (L-PBF) and wire-arc additive manufacturing (WAAM) processes. The microstructure and pole figures are predicted for Inconel 718 samples produced by L-PBF and Inconel 740H samples produced by WAAM processes. Finally, the model predictions compare well with the observed microstructure and pole figures results for both the L-PBF and WAAM processes.

20 FOSSIL-FUELED POWER PLANTS↗