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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS2022

Mechanisms of Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Single Event Transients in an Epitaxial Silicon Diode

Heavy ion-, focused X ray-, and pulsed laser induced single event effects in an epitaxial silicon diode were simulated using Sentaurus Technology Computer Aided Design (TCAD). The variation of the potential with time in simulation agrees with previous experimental data, which suggests that the different radiation sources result in different amounts of potential modulation. The charge generation spatial profile strongly affects the potential modulation. The longitudinal range and starting location of generated charge most strongly impacts the amount of potential modulation, while the radial width has a slight effect, and the temporal duration of charge injection has negligible impact on potential modulation

Kaitlyn L. Ryder↗
NASA NTRS1996

Correlation of the Lattice Distortion and Polaron Conduction with the Physical Properties of La (sub 0.7)Ca(sub 0.3)MnO(sub 3) and La(sub 0.5)Ca(sub 0.5)CoO(sub 3) Epitaxial Films

The effects of lattice distortion on the physical properties of La (sub 0.7)Ca(sub 0.3)MnO(sub 3) and La(sub 0.5)Ca(sub 0.5)CoO(sub 3) films are investigated. Our results suggest that larger substrate-induced lattice distortion gives rise to larger zero-field resistivity and larger negative magnetoresistance.

lattice distortion epitaxial films lattice polaron↗
NASA NTRS1996

A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth

A structural examination of aluminum nitride growth on [111] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out-of-plane tilts were evident. This article examines these issues with a structural examination of AlN and GaN/AlN on silicon and compares the findings to those reported in the literature.

GaN AlN Si epitaxial aluminum gallium nitride↗
NASA NTRS1965

Instruction manual for epitaxial apparatus

Instruction manual for apparatus using programmer operation of electronic valves for etching and growth of single crystal silicon, deposition of silicon dioxide, and nucleation site treatment

MANUAL↗
NASA NTRS1969

Epitaxial crystalline growth upon cold substrates

By sputtering a material with a high-energy ion-beam bombardment, the molecules of the target can be dislodged and ejected for subsequent deposition on a cold substrate of the desired crystallographic type and orientation.

Lebduska, R. L.↗
NASA NTRS1972

Coaxial Inverted Geometry Epitaxial Transistor

Silicon transistor, developed for use in biotelemetry circuits, provides high current gain at low levels of power and voltage. Device operates from biopotential or miniature batteries and is suitable for incorporation into monolithic integrated circuits. Coaxial configuration and small size offer promise for high frequency application.

Hruby, R. J.↗
NASA NTRS1973

Low-temperature epitaxy of Ge films by sputter deposition.

It is shown experimentally that isoepitaxial growth of Ge films on Ge substrates can be obtained by dc sputtering at substrate temperatures as low as 100 C. The crystallographic structure and orientation of the films are strongly influenced by such deposition parameters as substrate temperature, growth rate, surface contamination, and sputtering-gas purity. The amorphous-polycrystalline transition occurs between 110 and 115 C, while the polycrystalline-single crystalline transition occurs at roughly 140 C. The crystallographic order increases with increasing substrate temperature.

Khan, I. H.↗
NASA NTRS1974

Characteristics of epitaxial garnets grown by CVD using single metal alloy sources

Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

Besser, P. J.↗
NASA NTRS1975

Ellipsometer measurements of epitaxial GaAs layers: A concept

Report discusses analysis involving Maxwell's equations formed in a 6-by-6 matrix. By applying boundary conditions at proper points in sample, equation for propagation of light through anisotropic medium is reduced to eigenvalue problem resulting in 4-by-4 matrix.

Desmet, D. J.↗
NASA NTRS1974

Ellipsometric measurements of epitaxial GaAs layers on a GaAs substrate

An extensive examination of ellipsometric equations for anisotropic surfaces and films is reported. It is shown that the reflection matrix can be calculated by writing Maxwell's equations in 6 x 6 matrix form and by applying appropriate boundary conditions at proper points in the development of the formalism, reducing the equation for the propagation of light to an eigenvalue problem using a 4 x 4 matrix.

Desmet, D. J.↗
NASA NTRS1975

Ion-implanted epitaxially grown ZnSe

The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It was proposed that shorter wavelength emission and higher efficiency be achieved by employing a p-i-n diode structure rather than the normal p-n diode structure. The intervening i layer minimizes concentration quenching effects and the donor-acceptor pair states leading to long wavelength emission. The surface p layer was formed by ion implantation; implantation of the i layer rather than the n substrate permits higher, uncompensated p-type doping. An ion implanted p-n junction in ZnSe is efficiency-limited by high electron injection terminating in nonradiative recombination at the front surface, and by low hole injection resulting from the inability to obtain high conductivity p-type surface layers. While the injection ratio in p-n junctions was determined by the radio of majority carrier concentrations, the injection ratio in p-i-n structures was determined by the mobility ratios and/or space charge neutrality requirements in the i layer.

Chernow, F.↗