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At least 253 records · Page 14

Shallow-homojunction GaAs solar cells

Single-crystal GaAs shallow-homojunction solar cells on GaAs or Ge substrates, without Ga sub 1-x Al sub x As window layers, that have conversion efficiencies exceeding 20% at AM1 (17% at AMO). Using a simple theoretical model, good fits were obtained between computer calculations and experimental data for external quantum efficiency and conversion efficiency of cells with different values of n+ layer thickness. The calculations not only yield values for material properties of the GaAs layers composing the cells but will also permit the optimization of cell designs for space and terrestrial applications. Preliminary measurements indicate that the shallow-homojunction cells are resistant to electron irradiation. In the best test so far, bombardment with 1 x 10 to the 16th power/sq cm fluence of 1 MeV electrons reduced the short-circuit current by only about 6%.

Fan, J. C. C.↗

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Quantum Efficiency↗

Impact of Tiny Fermi Pockets with Extremely High Mobility on the Hall Anomaly in the Kagome Metal CsV 3 ⁢Sb 5

The kagome metal CsV 3 ⁢Sb 5 exhibits an unusual charge-density-wave (CDW) order, where the emergence of loop current order that breaks time-reversal symmetry (TRS) has been proposed. A key feature of this CDW phase is a nonmonotonic Hall effect at low fields, often attributed to TRS breaking. However, its origin remains unclear. Here, we conduct comprehensive magnetotransport measurements on CsV 3 ⁢Sb 5 and, through mobility spectrum analysis, identify the formation of tiny Fermi pockets with extremely high mobility below the CDW transition. Furthermore, electron irradiation experiments reveal that the nonmonotonic Hall effect is significantly suppressed in samples with reduced mobility, despite no substantial change in the electronic structure. In conclusion, these results indicate that the nonmonotonic Hall effect originates from these tiny Fermi pockets with high mobility carriers rather than anomalous Hall mechanisms, providing new insights into understanding the Hall anomaly in this kagome system.

36 MATERIALS SCIENCE↗

Design and demonstration of an economical SRF structure for Continuous Wave (CW), high-energy, Megawatt-class beams

Due to its very high RF-to-beam efficiency, superconducting radiofrequency (SRF) cavities have become the technology of choice for the construction of large linear accelerators (linacs) for basic science applications (examples, ESS and PIP-II). The technology is also attractive for high volume industrial applications such as electron irradiation processing of wastewater and flue gas. However, SRF’s current reliance on liquid helium for cryogenic cooling introduces infrastructural and safety challenges for use in industrial settings. Cryocooler conduction-cooling is a recently developed novel technique for operating SRF cavities without requiring liquid helium. This project aims for technical design and economic assessment of a medium energy, high average power e-beam linac based on the conduction-cooled SRF technique for high volume irradiation treatment of wastewater. The goals of this project are (1) to design a medium energy (10 MeV), high average power (1 MW) electron beam accelerator around the cryocooler conduction-cooled SRF cavity technology, (2) demonstrate the required accelerating voltage on a prototype cavity, and (3) build a cost-model to evaluate capital and operating expense of the accelerator.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Lithium - An impurity of interest in radiation effects of silicon.

Study of the introduction and annealing of defects produced in lithium-diffused float-zone n-type silicon by 30-MeV electrons and fission neutrons. The introduction rate of recombination centers produced by electron irradiation is dependent on lithium concentration and for neutron irradiation is independent of lithium concentration. The introduction rate of Si-B1 centers also depends on the lithium concentration. The annealing of electron- and neutron-produced recombination centers, Si-B1 centers, and Si-G7 centers in lithium-diffused silicon occurs at much lower temperatures than in nondiffused material.

Naber, J. A.↗

Fluence Uniformity Measurements in an Electron Accelerator Used for Irradiation of Extended Area Solar Cells and Electronic Circuits for Space Applications

It is common to have liquid crystal displays and electronic circuit boards with area sizes of the order of 20x20 sq cm on board of satellites and space vehicles. Usually irradiating them at different fluence values assesses the radiation damage in these types of devices. As a result, there is a need for a radiation source with large spatial fluence uniformity for the study of the damage by radiation from space in those devices. Kent State University s Program on Electron Beam Technology has access to an electron accelerator used for both research and industrial applications. The electron accelerator produces electrons with energies in the interval from 1 to 5 MeV and a maximum beam power of 150 kW. At such high power levels, the electron beam is continuously scanned back and forth in one dimension in order to provide uniform irradiation and to prevent damage to the sample. This allows for the uniform irradiation of samples with an area of up to 1.32 sq m. This accelerator has been used in the past for the study of radiation damage in solar cells (1). However in order to irradiate extended area solar cells there was a need to measure the uniformity of the irradiation zone in terms of fluence. In this paper the methodology to measure the fluence uniformity on a sample handling system (linear motion system), used for the irradiation of research samples, along the irradiation zone of the above-mentioned facility is described and the results presented. We also illustrate the use of the electron accelerator for the irradiation of large area solar cells (of the order of 156 sq cm) and include in this paper the electrical characterization of these types of solar cells irradiated with 5 MeV electrons to a total fluence of 2.6 x 10(exp 15) e/sq cm.

Uribe, Roberto M.↗

Silicon solar cell characterization at low temperatures and low illumination as a function of particulate irradiation

Various configurations of back surface reflector silicon solar cells including small (2 x 2) cm and large (approx. 6 x 6) cm cells with conventional and wraparound contacts were subjected to 1 MeV electron irradiation and characterized under both Earth orbital and deep space conditions of temperatures and illuminations. Current-Voltage (I-V) data were generated from +65 C to -150 C and at incident illuminations from 135.3 mW/sq cm to 5.4 mW/sq cm for these cells. Degradation in cell performance which is manifested only under deep space conditions is emphasized. In addition, the effect of particle irradiation on the high temperature and high intensity and low temperature and low intensity performance of the cells is described. The cells with wraparound contacts were found to have lower efficiencies at Earth orbital conditions than the cells with conventional contacts.

Whitaker, A. F.↗

Characteristics of RF resulting from dielectric discharges

This paper presents measurements of the electromagnetic radiation pulses and the replacement current pulses which result from the breakdown of Mylar and Kapton samples. The observed dependence of the characteristics of the replacement current pulse as a function of electron beam energy is discussed. The characteristics of the electromagnetic radiation pulses are also analyzed in the text of this paper. The source of the irradiating electrons is a monoenergetic electron beam whose energy was varied from 12.5 KeV to 25 KeV.

Leung, P.↗

Deep levels and radiation effects in p-InP

A survey was conducted on past studies of hole traps in InP. An experiment was designed to evaluate hole traps in Zn-doped InP after fabrication, after electron irradiation and after annealing using deep level transient spectroscopy. Data similar to that of Yamaguchi was seen with observation of both radiation-induced hole and electron traps at E sub A=0.45 eV and 0.03 eV, respectively. Both traps are altered by annealing. It is also shown that trap parameters for surface-barrier devices are influenced by many factors such as bias voltage, which probes traps at different depths below the surface. These devices require great care in data evaluation.

Anderson, W. A.↗

Behavior of lithium in irradiated solar cells.

The current state of the art in radiation resistant lithium-doped silicon solar cells is reviewed. Fabrication techniques are reviewed. Characteristics of lithium-doped cells are discussed. Behavior of lithium-doped cells during 1 MeV electron irradiation are studied for various types of cells. Effects of variations in lithium and oxygen concentration are shown and discussed. Capacitance measurements at various voltages, frequencies and temperatures are used to detect charges in lithium donor concentration and the formation of defects during irradiation. Physical models to explain the observed effects are presented.

Carter, J. R., Jr.↗

Direct Quantification of Heat Generation Due to Inelastic Scattering of Electrons Using a Nanocalorimeter

Transmission electron microscopy (TEM) is arguably the most important tool for atomic-scale material characterization. A significant portion of the energy of transmitted electrons is transferred to the material under study through inelastic scattering, causing inadvertent damage via ionization, radiolysis, and heating. In particular, heat generation complicates TEM observations as the local temperature can affect material properties. Here, the heat generation due to electron irradiation is quantified using both top-down and bottom-up approaches: direct temperature measurements using nanowatt calorimeters as well as the quantification of energy loss due to inelastic scattering events using electron energy loss spectroscopy. Combining both techniques, a microscopic model is developed for beam-induced heating and to identify the primary electron-to-heat conversion mechanism to be associated with valence electrons. Building on these results, the model provides guidelines to estimate temperature rise for general materials with reasonable accuracy. This study extends the ability to quantify thermal impact on materials down to the atomic scale.

42 ENGINEERING↗

Progress in InP solar cell research

Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.

Weinberg, Irving↗

Progress in InP solar cell research

Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/P homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.

Weinberg, I.↗

Radiation durability of polymeric matrix composites

The combined effects of thermal cycling and high-dose electron irradiation on the mechanical properties of laminated graphite/polymeric CFRPs are investigated experimentally. The test apparatus and procedures are briefly described, and the results are presented in extensive tables and graphs. It is found that electron radiation produces similar significant reductions in the glass transition temperatures of the neat resins and CFRPs. The radiation-induced degradation products tend to plasticize the matrix at high temperature but embrittle it at low temperature.

Tenney, Darrel R.↗

Space qualification of IR-reflecting coverslides for GaAs solar cells

Improvements to GaAs solar array performance, from the use on solar cell coverslides of several reflecting coatings that reject unusable portions of the solar spectrum, are quantified. Blue-red-rejection (BRR) coverslides provide both infrared reflection (IRR) and ultraviolet rejection (UVR). BRR coverslides were compared to conventional antireflection (AR) and ultraviolet (UV) coated coverslides. A 2% improvement in peak-power output, relative to that from Ar-coated coverslides, is seen for cells utilizing BRR coverslides with the widest bandpass. Coverslide BRR-filter bandpass width and covered-solar-cell short-circuit current is a function of incident light angle and the observed narrower-bandpass filters are more sensitive to change in angle from the normal than are wide-bandpass filters. The first long-term (3000 hours) UV testing of unirradiated and 1 MeV electron-irradiated GaAs solar cells, with multilayer-coated coverslides to reduce solar array operating temperature, has indicated that all multilayer coatings on coverslides and solar cells will experience degradation from the space environment (UV and/or electrons). Five types of coverslide coatings, designed for GaAs solar cells, were tested as part of a NASA-sponsored space-flight qualification for BRR, multi-layer-coated, coverslides. The reponse to the different radiations varied with the coatings. The extent of degradation and its consequences on the solar cell electrical characteristics depend upon the coatings and the radiation. In some cases, an improved optical coupling was observed during long-term UV exposure to the optical stack. The benefits of multi-layered solar cell optics may depend upon both the duration and the radiation environment of a mission.

Meulenberg, Andrew↗