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All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Gravitational Contact Interactions -- Does the Jordan Frame Exist?

Scalar--tensor theories, with Einstein Hilbert and non-minimal interactions, $\sim M^2R/2 -\alpha\phi^2R/12 $, have graviton exchange induced contact interactions. These always pull the theory back into a formal Einstein frame in which $\alpha$ does not exist. In the Einstein frame, contact terms are induced, that are then absorbed back into other couplings to define the effective potential (or equivalently, the renormalization group). We show how these effects manifest themselves in a simple model by computing the effective potential in both frames displaying the discrepancy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2005

Development of a Thin-Film Solar Cell Interconnect for the Powersphere Concept

Dual junction amorphous silicon (a-Si) solar cells produced on polyimide substrate have been selected as the best candidate to produce a lightweight solar array for the PowerSphere program. The PowerSphere concept features a space-inflatable, geodetic solar array approximately 0.6 meters in diameter and capable of generating about 20W of electrical power. Trade studies of various wiring concepts and connection methods led to an interconnect design with a copper contact that wraps around the edge, to the back of the solar cell. Applying Plasma Vapor Deposited (PVD) copper film to both sides and the edge of the solar cell produces the wrap around contact. This procedure results in a contact pad on the back of the solar cell, which is then laser welded to a flex circuit material. The flex circuit is constructed of copper in a custom designed routing pattern, and then sandwiched in a Kapton insulation layer. The flex circuit then serves as the primary power distribution system between the solar cells and the spacecraft. Flex circuit material is the best candidate for the wiring harness because it allows for low force deployment of the solar cells by the inflatable hinges on the PowerSphere. An additional frame structure, fabricated and assembled by ILC Dover, will reinforce the wrap around contact-flex blanket connection, thus providing a mechanically robust solar cell interconnect for the PowerSphere multifunctional program. The PowerSphere team will use the wraparound contact design approach as the primary solution for solar cell integration and the flex blanket for power distribution.

Simburger, Edward J.↗
DOE OSTI2022

Electrical Analysis of Pulsed Laser Annealed Poly-Si:Ga/SiOx Passivating Contacts

High-efficiency single crystalline silicon (c-Si) solar cells require precise control of dopant diffusion profiles and highly active doping concentrations through thermal annealing. Conventional furnace annealing has been successfully employed for dopant diffusion in aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and Topcon cells. However, furnace annealing limits some next-generation polycrystalline silicon (poly-Si) on SiOx passivating contacts. This limitation largely affects p-type passivating contacts by not being able to: 1) control the dopant diffusion accurately to prevent B segregation at the SiOx and c-Si interface; and 2) provide highly activated doping concentrations for low contact resistivity. In this contribution, we use a nanosecond excimer laser to examine the passivation quality and electrical performance of both B- and Ga-doped poly-Si/SiOx passivating contacts. The core of this method is to take advantage of the nonequilibrium nature of the anneal through rapid melting and recrystallizing the poly-Si in a short timescale and to achieve doping concentrations above the solid solubility limit. Simulations were performed on polished surfaces to visualize the doping diffusion profiles under different laser conditions, and secondary ion mass spectrometry (SIMS) was used to verify the experimental diffusion profiles post pulsed laser melting (PLM). The results show the dopant diffusion profiles can be tuned precisely through PLM. The electrical analysis using VdP-Hall measurements reveals that the active doping concentration reached 10^21 cm-3 for B and ~2×10^21 cm-3 for Ga in poly-Si, far exceeding their solid solubility limit in Si, with a nearly 100% dopant activation achieved for B, and 20% for Ga. This highly activated dopant profile results in a low contact resistivity of <15 mO·cm^2 for B-doped contacts and <40 mO·cm^2 for Ga-doped contacts. We demonstrate that the passivation quality of the laser annealed contacts shows a linear dependency with the laser energy density and the number of pulses. PLM was also performed on random pyramid textured samples, and we found that preferential melting exists for the tips of pyramids, which can be pursued further for selective pinhole opening. Additionally, we perform thermal stability tests of these hyperdoped passivating contacts and show that under certain laser conditions, the B-doped samples exhibit good thermal stability with near full activation for temperatures up to 800°C. Lastly, we transfer this technique to a larger area by overlapping laser spots and show uniform passivation quality and electrical performance. We are currently implementing this PLM annealed p-type passivating contacts into double-side back-junction poly-Si/SiOx passivating contact devices. Our results show that PLM can not only enable the next generation of high-efficiency c-Si photovoltaics technology but can also benefit the c-Si integrated circuit industry through hyperdoping other semiconductors with atoms that may otherwise have a low solubility.

doping diffusion profile↗
NASA NTRS1981

An automated process sequence using preformed cell contacts and interconnects with a total cost of $0.64 per peak watt in 1986

A process sequence is described which utilizes a preformed metal mesh electrostatically bonded to each cell to provide the front contact. Cells of 12 percent AM1 efficiency have been produced using this scheme. This method also permits access to both contacts on the cell from the back side. In addition, low cost cell interconnection is accomplished using a flexible 'printed circuit' sheet which is ultrasonically bonded to the cell contacts. The complete process sequence as well as automated equipment which also uses ion implantation and pulse annealing is described. The total cost for module fabrication is estimated at $0.64 per peak watt for a 30 MW/year plant.

Armini, A. J.↗
DOE OSTI2020

Simultaneous transmission/absorption photometry of particle-laden filters from wildland fires during the Biomass Burning Observation Project (BBOP) field campaign

Transmissivity and absorptivity measurements were carried out simultaneously in the visible (wavelength of 532 nm) at laboratory conditions using particle-laden filters obtained from a three-wavelength particle/soot absorption photometer (PSAP). Here, the particles were collected on filters from wildland fires over the Pacific Northwest during the Department of Energy Biomass Burning Observation Project (BBOP) field campaign in 2013. The objective of this investigation was to apply this measurement approach, referred to as simultaneous transmission/absorption photometry (STAP), to estimate the aerosol extinction coefficient from actual field-campaign filter aerosol, and compare results with the PSAP. The STAP approach offers several advantages over the PSAP, including estimation of the extinction coefficient from temperature measurements (avoiding the complexities associated with filter reflectivity/scattering measurements), as well as determination of the filter optical properties and filter effects on particle absorption (resulting in particle absorption enhancement). The experimental arrangement included a laser probe beam impinging normal to the particle-coated surface of a vertically mounted filter, and a thermocouple placed flush in the middle of (and in thermal contact with) the filter uncoated back surface. With this simple arrangement, the transmissivity and absorptivity were determined simultaneously at a given laser beam wavelength. The measurement repeatability was better than 0.3 K (95% confidence level) for temperature and 0.4 mW for laser power. The limit of detection for the extinction coefficient was estimated to be (8–12) Mm -1 (95% confidence level) at about 1.9 mW laser power. The extinction coefficient was determined through measurement of both PSAP blank and exposed filters. Filters were obtained from nine different aircraft flights conducted during the BBOP campaign, representing different flight patterns, days, stages of burning, landscapes, and wildland fires. The STAP extinction coefficient matched the darkness of the filter coating, however the PSAP-filter results did not follow the same order. Although there were differences in transmissivity between the two techniques, the estimated values for absorption coefficient were in good agreement.

54 ENVIRONMENTAL SCIENCES↗
NASA NTRS2023

Development of an Ultra High-Pressure Metals Promoted Combustion in Oxygen Test Apparatus

Materials flammability data is needed at pressures higher than ever tested before (greater than 10,000 psi). WSTF has designed and is currently building a metals flammability apparatus that can test metals up to 30,000 psi. Solid progress was achieved on the chamber in terms of system build up and fulfilling requirements to perform a NASA Test Readiness Review. Understanding metals flammability data at extreme pressure opens the doors for higher pressure and higher performance oxygen systems. Proposed systems include more reliable/higher performance propulsion systems and more reliable/lighter Environmental Control Life Support Systems (ECLSS). The test system needed for this testing required significant research and development to select a pressurization method and eliminate contact with potentially flammable materials back to the chamber. No additional promoted combustion data was collected in FY21. This International Research & Development (IRAD) proposal was critical to getting the system very close to operational status. This capability is critical to collect forward leaning material flammability data for future spacecraft and ground systems. Forward work has been identified and funding is being sought outside of the Center Innovation Fund (CIF) process for late FY23/FY24.

promoted combustion↗
DOE OSTI2025

Wafer-Free Crystalline Silicon Solar Cells (CRADA Final Report)

This CRADA project, based on the DOE Solar Energy Technologies Office (SETO) Solar Prize Voucher program, helped Leap Photovoltaics to develop methodologies to immobilize Si particles by permanently attaching them to an Al-coated substrate and thereby forming carrier-selective electrical contacts to the Si particles. The bigger goal was to help Leap Photovoltaics develop these immobilized and contacted particle arrays into relatively efficient, inexpensive, and industrially relevant solar cells. By using Si particles instead of wafers in a solar cell absorber layer, one can avoid costs associated with growing monocrystalline Si ingots, then diamond-sawing them into wafers, then processing wafers into cells – a mainstream practice in today's high-efficiency Si cell and module technology. Monocrystalline or polycrystalline Si particles can be obtained in various ways: for example, Si kerf from wafer sawing is monocrystalline; recycled Si cell wafers can be ball-milled into particles; particles can be grown using various gas-phase techniques (mostly from SiH4). These Si particles can be assembled onto a substrate and serve as an absorber layer for the solar cell, absorbing photons to generate photocarriers. The challenge with this technique is to collect photocarriers from individual Si particles, with separation of photogenerated electrons to the negative cell’s electrode and positive photogenerated holes to the positive electrode. Therefore, each particle must have two isolated, carrier-selective contacts: one for electrons and one for holes. Plus, particles need to be immobilized onto a solid substrate. The goal of this work was focused on the immobilization of Si particles and creating hole-selective contact to them at the same time, using industrially relevant Si photovoltaic (PV) cell technology: screen printing of Al back-surface field electrodes. This is used in the mainstream Propane Education and Research Council (PERC) technology for hole-collecting contacts at the back of the cell. The work performed at NREL consisted of screen printing of Al metal paste on substrates, spreading Si particles onto it, and thermally processing the structures to form hole-collecting contacts. The final structures were investigated by scanning electron microscopy (SEM) after focused ion beam (FIB) cross-sectioning and polishing. The work was done jointly by NREL staff and Leap Photovoltaics (Leap PV) employees stationed at NREL. The samples were then taken to Leap PV for further processing. Training the Leap PV employee on various NREL techniques (laser cutting, screen printing, thermal processing, characterization) was part of the scope.

14 SOLAR ENERGY↗
NASA NTRS1988

Alignment verification procedures

In alignment verification procedures each laboratory is required to align its test machines and gripping fixtures to produce a nearly uniform tensile stress field on an un-notched sheet specimen. The blank specimens (50 mm w X 305 mm l X 2.3 mm th) supplied by the coordinators were strain gauged. Strain gauge readings were taken at all gauges (n = 1 through 10). The alignment verification procedures are as follows: (1) zero all strain gauges while specimen is in a free-supported condition; (2) put strain-gauged specimen in the test machine so that specimen front face (face 1) is in contact with reference jaw (standard position of specimen), tighten grips, and at zero load measure strains on all gauges. (epsilon sub nS0 is strain at gauge n, standard position, zero load); (3) with specimen in machine and at a tensile load of 10 kN measure strains (specimen in standard position). (Strain = epsilon sub nS10); (4) remove specimen from machine. Put specimen in machine so that specimen back face (face 2) is in contact with reference jaw (reverse position of specimen), tighten grips, and at zero load measure strains on all gauges. (Strain - epsilon sub nR0); and (5) with specimen in machine and at tensile load of 10 kN measure strains (specimen in reverse position). (epsilon sub nR10 is strain at gauge n, reverse position, 10 kN load).

Edwards, P. R.↗
DOE OSTI2020

Mechanical seal with high pressure high temperature secondary seal

A secondary seal of a mechanical seal comprises an annular sealing gasket and backing plate surrounding a cylindrical sealing surface, all of which can be made of the same metallic material. The gasket is C-shaped in cross section, and is axially pressed during operation into a C-shaped groove formed in the backing plate, the groove being shallower and larger in inner diameter than the gasket, so that the gasket, when pressed into the groove, deforms radially inward and seals against both the backing plate and the sealing surface. The contact area between the gasket and sealing surface increases with pressure. In embodiments, when the pressure is released, the gasket retracts from the sealing surface, allowing easy disassembly and allowing axial movement of the gasket and backing plate. Highly polished surfaces of the gasket and sealing surface can allow axial motion thereof during operation to maintain the seal face gap.

42 ENGINEERING↗
DOE OSTI2025

Dynamic Metal–Support Interaction Dictates Cu Nanoparticle Sintering on Al 2 O 3 Surfaces

Nanoparticle sintering remains a critical challenge in heterogeneous catalysis. In this work, we present a unified deep potential (DP) model based on the Perdew–Burke–Ernzerhof approximation of density functional theory for Cu nanoparticles on three Al 2 O 3 surfaces (γ-Al 2 O 3 (100), γ-Al 2 O 3 (110), and α-Al 2 O 3 (0001)). Using DP-accelerated simulations, we reveal that the nanoparticle size-mobility relationship strongly depends on the supporting surface. The diffusion of nanoparticles on the two γ-Al 2 O 3 surfaces is almost independent of the size of the nanoparticle, while the diffusion on α-Al 2 O 3 (0001) decreases rapidly with increasing size. Interestingly, nanoparticles with fewer than 55 atoms diffuse several times faster on α-Al 2 O 3 (0001) than on γ-Al 2 O 3 (100) at 800 K while expected to be more sluggish based on their larger binding energy at 0 K. The diffusion on α-Al 2 O 3 (0001) is facilitated by dynamic metal–support interaction (MSI), where Al atoms move out of the surface plane to optimize contact with the nanoparticle and relax back to the plane as the nanoparticle moves away. In contrast, the MSI on γ-Al 2 O 3 (100) and on γ-Al 2 O 3 (110) is dominated by more stable and directional Cu–O bonds, consistent with the limited diffusion observed on these surfaces. Our extended MD simulations provide insight into the sintering processes, showing that the dispersity of the nanoparticles strongly influences the coalescence driven by nanoparticle diffusion. We observed that the coalescence of Cu 13 nanoparticles on α-Al 2 O 3 (0001) can occur in a short time (10 ns) at 800 K even with an initial internanoparticle distance increased to 3 nm, while the coalescence on the two γ-Al 2 O 3 surfaces are inhibited significantly by increasing the initial internanoparticle distance. These findings demonstrate that the dynamics of the supporting surface is crucial to understanding the sintering mechanism and offer guidance for designing sinter-resistant catalysts by engineering the support morphology.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Fyn–Saracatinib Complex Structure Reveals an Active State-like Conformation

Fyn is a Src-family tyrosine kinase implicated in synaptic dysfunction and neuroinflammation across multiple neurodegenerative disorders, including Alzheimer’s disease (AD) and Parkinson’s disease (PD). Saracatinib (AZD0530) is a potent Src-family inhibitor that has been explored as a repurposed therapeutic; however, its clinical utility is limited by poor kinase selectivity caused by high sequence conservation within Src-family ATP-binding sites. Here, we combine surface plasmon resonance (SPR) and X-ray crystallography to define saracatinib recognition by the Fyn kinase domain (KD). SPR single-cycle kinetics shows that saracatinib binds the isolated Fyn KD and full-length Fyn with low-nanomolar affinity, whereas dasatinib binds with subnanomolar affinity and markedly slower dissociation. We determined the crystal structure of the Fyn KD-saracatinib complex at 2.22 Å resolution. The kinase adopts an active-like conformation with the DFG motif and αC-helix in the ‘in’ state and a conserved β3 αC Lys-Glu salt bridge. Saracatinib occupies the adenine and ribose pockets, and engages the hinge through direct and water-mediated hydrogen bonding while complementing a hydrophobic back pocket by van der Waals contacts. Comparison with reported saracatinib-bound structures of other kinases suggests that the active-state geometry observed for Fyn creates a pocket not observed in inactive-like complexes, providing a structural handle for designing Fyn-selective inhibitors. Comparison with all saracatinib-bound kinase co-structures currently available in the PDB (ALK2 and PKMYT1) indicates a conserved monodentate hinge binding mode but kinase-dependent αC-helix conformations, providing a structural rationale for designing Fyn-selective analogues.

AZD0530↗
NASA NTRS1976

Method and apparatus for measurement of trap density and energy distribution in dielectric films

Trap densities in dielectric films are determined by tunnel injection measurements when the film is incorporated in an insulated-gate field effect transistor. Under applied bias to the transistor gate, carriers (electrons or holes) tunnel into traps in the dielectric film. The resulting space charge tends to change channel conductance. By feeding back a signal from the source contact to the gate electrode, channel conductance is held constant, and by recording the gate voltage as a function of time, trap density can be determined as a function of distance from the dielectric-semiconductor interface. The process is repeated with the gate bias voltage at different levels in order to determine the energy distribution of traps as a function of distance from the interface.

Maserjian, J.↗
NASA NTRS1990

Millimeter-wave monolithic diode-grid frequency multiplier

A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.

Maserjian, Joseph↗
NASA NTRS2011

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗
NASA NTRS2012

SRMS Assisted Docking and Undocking for the Orbiter Repair Maneuver

As part of the Orbiter Repair Maneuver (ORM) planned for Return to Flight (RTF) operations, the Shuttle Remote Manipulator System (SRMS) must undock the Orbiter, maneuver it through a complex trajectory at extremely low rates, present it to an EVA crewman at the end of the Space Station Remote Manipulator System to perform the Thermal Protection System (TPS) repair, and then retrace back through the trajectory to dock the Orbiter with the Orbiter Docking System (ODS). The initial and final segments of this operation involve the interaction between the SRMS, ISS, Orbiter and ODS. Previously, a technique entitled "SRMS assisted docking" for installation of a payload to the ODS had been developed and was utilized for the Russian provided Docking Module on STS-74 during Shuttle-Mir missions and both the Node 1 and FGB elements on STS-88/Flight 2A. This procedure consisted of the SRMS grappling the respective payload, maneuvering it to a pre-install position inches above the ODS Androgynous Peripheral Attachment System (APAS) ring, commanding the SRMS into Test mode (which allows brakes-off motion of the joints), and then down-firing Primary Reaction Control System (PRCS) jets in order to effect a capture of the APAS latches. Once a successful capture had been achieved, then the AP AS was operated through its nominal retraction sequence to complete the mating sequence. While this technique can once again be used for the tail end docking portion of the ORM, the initial undocking of the orbiter and ISS vehicles with the assistance of the SRMS has yet to be attempted on orbit. The objective here is to determine the most efficient means to separate or extract the vehicles. Two techniques were analyzed in support of RTF: (1) the 'nominal' demating from the mated interface, and (2) the SRMS performing the operation (either in an active or passive fashion). In the first operation, the demating process would replicate standard undocking operations, with the exception that the SRMS is allowed to arrest the resulting motion. The second operation would be to extend the APAS ring to a ready to dock position, open the capture latches, and then detach the vehicles using the SRMS either actively or passively. In the active case, the APAS ring is extended and latched, and the SRMS is commanded to pull the two interfaces apart (assuming that the effective pull force of the SRMS can overcome the spec values of the combined latch resistance). In the passive case, the SRMS brakes are engaged and the AP AS mechanism is commanded to retract, pulling the two interfaces apart. Since the emphasis of both STS-74 and STS-88 had solely been on the installation operation, as opposed to the separation operation, two new models required development and incorporation within simulation tools designed to analyze those scenarios. These enhancements included: (1) a detailed demating dynamics model to characterize the pusher spring characteristics during undocking, and (2) contact and mechanical system modeling of the back side of the latches to represent unlatching dynamics. This paper first provides an overview of the Monte-Carlo screening analysis for the installation (both nominal and contingency), including the variation of separation distance, misalignment conditions, SRMS joint/brake parameter characteristics, and PRCS jet combinations and corresponding thrust durations. The resulting 'optimum' solution is presented based on trade studies between predicted capture success and integrated system loads. This paper then discusses the upgrades to the APAS math model associated with the new SRMS assisted undocking technique and reviews simulation results for various options investigated for either the active and passive separation of the ISS from the Orbiter.

Space Station Remote Manipulator System↗
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
NASA NTRSDate not supplied

In-Situ Detection of Process-Induced Porosity During Cure of Out-of-Autoclave Composites

Composite materials offer unique benefits in aerospace applications, including high strength-to-weight ratio, and are becoming increasingly used by industry manufacturers. Current manufacturing and processing methods can lead to defects in the composites, which are identified after fabrication using inspection methods. This study utilized a high-temperature ultrasonic inspection system to detect process-induced porosity in an out-of-autoclave (OOA) composite panel during cure. In order to perform ultrasonic scans in-situ during cure, the system needed to be able to operate at oven temperatures up to 200 °C. There are no commercially available ultrasonic scanning systems that can operate continuously at these temperatures, so an enclosure was fabricated to insulate the ultrasonic system in the curing oven. The enclosure housed a MISTRAS® motorized X-Y raster scanner and contact transducer (Olympus® X2002). The Olympus® X2002 contact transducer is a continuous high-temperature delay line transducer with a center frequency of 2.25 MHz. In order to prevent the inside of the enclosure from reaching high temperatures, a sparge pipe inside the cooling enclosure was connected to a liquid nitrogen (LN2) tank outside of the oven via insulated hoses. The cooling system was automatically controlled by a temperature controller that was programmed to open a solenoid valve along the hose at 31 ℃ and close at 28 ℃ inside the cooling enclosure. When the solenoid valve was open, LN2 would flow from the LN2 tank and vaporize prior to reaching cooling enclosure. A U-shaped sparge pipe had holes drilled along its length to uniformly introduce cold nitrogen gas into the cooling enclosure. This prevented the motors from ever reaching the maximum desired operating temperature of 38 ℃. In the bottom of the enclosure, the tool plate was placed with the composite facing the outside of the enclosure, exposing it to the temperatures of the oven. The tool plate was 63.5 mm thick borosilicate glass, which was chosen for its low ultrasonic attenuation and moderate thermal conductivity. A thin layer of ultrasonic couplant was placed on the tool plate. The transducer sent and received ultrasonic waves through the tool plate into the composite. A MISTRAS® Remote UT System performed all wave generation, analog to digital conversion, and data acquisition and processing. The transducer was connected directly to the Remote UT System via a high-temperature BNC cable (CD International, RG-316). Polyimide insulated copper wire was used to connect the scanner to a 2-axis motor drive, which was connected to the Remote UT System. The motor drive and Remote UT System were located outside the industrial oven. A diagram of the ultrasonic system is shown in Figure 1. Figure 1: Diagram of ultrasonic in-situ defect detection system. In this study, a porosity gradient was introduced into the carbon fiber reinforced polymer (CFRP) composite through a misfit of the part and caul plate. A 24-ply quasi-isotropic ([0/90, ±45]12S) composite panel was laid up using Newport® AS4C-M/NB321 out-of-autoclave (OOA) plain weave (PW) prepreg (42% resin content, 195 g/m2). The first 16 plies were 203 mm × 203 mm. Ply drops were incorporated into the panel by decreasing the length of plies 17-24. The sizes of each ply are included in Table 1. All plies were centered along their length (x-axis) creating a trapezoidal type cross-section. Table 1: Ply sizes Plies Length (mm) Width (mm) 1-16 203 203 17-18 102 203 19-20 85 203 21-22 68 203 23-24 51 203 A 15-5 stainless steel caul plate (Size: 203 × 203 × 1.2 mm) was placed on the laminate. The composite and caul plate were vacuum bagged to the tool plate. Per the product datasheet, Newport 321 can be cured between 121 °C and 149 °C, depending on service temperature, with a hold for 90-120 minutes. Based on prior thermal testing of the cooling enclosure, the desired composite temperature cycle could be attained when the air temperature of the oven was ramped to 160 °C at a rate of 1.7 °C/min with a 3 hour hold. The extended hold was not necessary to cure the composite, but did allow for additional scans at the cure temperature during preliminary testing. The composite panel was under vacuum pressure for the entire cure cycle. Under vacuum, the caul plate deformed causing high and low pressure regions. The low-pressure regions formed high porosity in the composite part. The ultrasonic data collected showed that the inspection system was able to monitor the evolution of porosity within the composite throughout the cure cycle. Fifty scans of a 203 mm × 51 mm (8 in. × 2 in.) area of the composite were completed throughout the cure cycle. The scan speed was set to 43 mm/s in the x-direction and 36 mm/s in the y-direction, with a 1.0 mm/pixel resolution in both directions. Each scan took approximately five minutes to complete. Figure 2 shows C-scan amplitude data (top view) from one scan during the cure cycle. The color map indicates the maximum amplitude (%) measured with a time gate that contains reflections from the back surface (furthest from the transducer in contact with the caul plate) of the composite. Because porosity in the composite increases the ultrasonic attenuation in the composite part, a higher amplitude (red) indicates low porosity and a lower amplitude (blue) indicates high porosity. The regions where the caul plate was applying increased pressure (center and ends of the panel) resulted in reduced porosity, whereas the ply drop regions had reduced pressure and thus had higher porosity. Figure 2: Amplitude C-scan (top view) of OOA composite from one scan during the 160 °C temperature hold. Higher amplitude (red) indicates low porosity. Lower amplitude (blue) indicates high porosity. A B-scan is a two-dimensional image plotting the ultrasonic signals from a single y-position at every x-location of the composite panel. The travel time (μs) of the ultrasonic wave (representing the through-thickness location) is plotted along the y-axis, and the ultrasonic wave signal is represented as a contour map. Based on the B-scan data, the location of the defects with respect to the composite thickness was able to be determined. The ply drop regions had high porosity near the front (tool plate) surface of the composite (Figure 3). Figure 3: B-scan (cross-section view) of OOA composite from one scan during the 160 °C temperature hold. Using the data obtained from amplitude C-scans and B-scans throughout the cure cycle, the high and low porosity regions within the composite laminate were detected and localized with high spatial resolution. This paper will discuss the evolution of porosity content in the OOA composite during cure. OOA tests aided the transition of this system to an autoclave, which is the primary method of curing aerospace-grade thermoset composites.

Tyler B. Hudson↗