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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Spin-Dependent Thermoelectric Power of Nanoislands

The Seebeck effect explains the generation of electric voltage as a result of a temperature gradient. Its efficiency, defined as the ratio of the generated electric voltage to the temperature difference, is sensitive to local inhomogeneities that alter the scattering rate and the density of the conduction electrons. Spin-polarized Seebeck tunneling generates a distinct thermovoltage in spin-up and spin-down charge transport channels, which, as a key to spin caloritronics, focuses on transport phenomena related to spin and heat. Here, we report spatially resolved measurement of the spin-dependent thermovoltage in a tunneling junction formed by ferromagnetic Co nanoislands and a Ni tip using spin-dependent scanning tunneling thermovoltage microscopy (SP-STVthM). We resolve the nanoscale thermoelectric powers with respect to spin polarization, nanoisland size, stacking order of Co layers on a Cu substrate, and local sample heterogeneities. The observed thermally generated spin voltages are supported by first-principles and model calculations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Deriving Material Properties from Feedback Error Signals in Scanning Tunneling Microscopy

Imperfections in measurements, e.g., deviations and broadening, are not devoid of information; rather, they can reveal valuable physical properties and processes. Scanning tunneling microscopy leverages a negative feedback loop to regulate the tunneling current. Practically, current fluctuates around its set point, and such deviations are considered insignificant and ignored. Here, in this study, we investigate the information embedded in these deviations. In the constant-current mode with an active feedback loop, we observe an unexpected persistent DC current offset from its set point when the tunneling junction is periodically perturbed. We demonstrate both experimentally and theoretically that such error signals encode local tunneling barrier heights and the square of local differential conductance as a consequence of the interplay between rectification and active feedback compensation. We provide evidence on the generalizability of this phenomenology to other negative feedback systems. This new approach has the potential to broadly impact physical sciences by allowing rapid measurements without lock-in amplifiers.

36 MATERIALS SCIENCE↗
DOE OSTI2023

HydroGEN Seedling: Monolithically Integrated Thin Film/Silicon Tandem Photoelectrodes for High-Efficiency and Stable Photoelectrochemical Water Splitting

In this project, we propose to develop monolithically integrated Si-based tandem photoelectrodes to achieve both high solar-to-hydrogen (STH) efficiency (>15%) and long-term stability (>1,000 hours) in spontaneous water splitting systems. The proposed tandem devices consist of a Ta 3 N 5 , BCTSSe, or In 0.5 Ga 0.5 N top junction, which has a bandgap of ~1.7-2.0 eV and can split the solar spectrum with the Si bottom junction. Ta 3 N 5 , BCTSSe, and InGaN will be grown/deposited on a low-resistivity nanowire tunnel junction on Si substrates using atomic layer deposition (ALD), sputtering, and molecular beam epitaxy (MBE), respectively. Both n and p-type Si solar wafers will be utilized, which can serve as the photoanode or photocathode, respectively. We will use N-rich GaN ultrathin passivation layers to protect photoelectrodes from corrosion and oxidation.

08 HYDROGEN↗
DOE OSTI2023

Tuning the inductance of Josephson junction arrays without SQUIDs

It is customary to use arrays of superconducting quantum interference devices (SQUIDs) for implementing magnetic field-tunable inductors. Here, we demonstrate an equivalent tunability in a (SQUID-free) array of single Al/AlOx/Al Josephson tunnel junctions. With the proper choice of junction geometry, a perpendicularly applied magnetic field bends along the plane of the superconductor and focuses into the tunnel barrier region due to a demagnetization effect. Consequently, the Josephson inductance can be efficiently modulated by the Fraunhofer-type supercurrent interference. The elimination of SQUIDs not only simplifies the device design and fabrication but also facilitates a denser packing of junctions, and, hence, a higher inductance per unit length. As an example, we demonstrate a transmission line, the characteristic impedance of which is field-tuned in the range of 4–8 kΩ, centered around the important value of the resistance quantum h/(2e)2≈6.5 kΩ.

Physics↗
NASA NTRS2007

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Wilt, David M.↗
DOE OSTI2024

Tunneling current-controlled spin states in few-layer van der Waals magnets

Abstract Effective control of magnetic phases in two-dimensional magnets would constitute crucial progress in spintronics, holding great potential for future computing technologies. Here, we report a new approach of leveraging tunneling current as a tool for controlling spin states in CrI 3 . We reveal that a tunneling current can deterministically switch between spin-parallel and spin-antiparallel states in few-layer CrI 3 , depending on the polarity and amplitude of the current. We propose a mechanism involving nonequilibrium spin accumulation in the graphene electrodes in contact with the CrI 3 layers. We further demonstrate tunneling current-tunable stochastic switching between multiple spin states of the CrI 3 tunnel devices, which goes beyond conventional bi-stable stochastic magnetic tunnel junctions and has not been documented in two-dimensional magnets. Our findings not only address the existing knowledge gap concerning the influence of tunneling currents in controlling the magnetism in two-dimensional magnets, but also unlock possibilities for energy-efficient probabilistic and neuromorphic computing.

Science & Technology - Other Topics↗
DOE OSTI2020

Characterization of Amplification Properties of the Superconducting-Ferromagnetic Transistor

Here we report on the measurement results of the superconducting-ferromagnetic transistors (SFTs). The devices were made at Northwestern University and Hypres (SeeQC), Inc. (Nevirkovets et al., 2014; 2015). SFT is a multiterminal device with the SIS'FIFS (or SFIFS'IS) structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material, respectively) exploiting intense quasiparticle injection in order to modify the nonlinear I-V curve of a superconducting tunnel junction. SFT is capable of providing voltage, current, and power amplification while having good input/output isolation. We characterized the devices using different measurement techniques. We measured S parameters of the single- and double-acceptor devices at frequencies up to 5 MHz. Importantly, we confirmed that the isolation between the input and output of the device is quite good. However, the techniques typically employed to characterize semiconductor devices do not allow for revealing the full potential of our low-resistive SFT devices, especially those having two acceptors. In the latter case, we also tested the devices using the battery-powered current sources with floating grounds. Analyzing double-acceptor I-V curves recorded at different levels of injection currents, for an optimal load, we deduced a small-signal voltage gain of 33 and a power gain of 2.4. We suggest that further improvement of the SFT device parameters is possible in optimized devices, so that the device potentially may serve as a preamplifier for readout of output signals of cryogenic detectors and be useful as an element of other superconductor-based circuits. In addition, we used scanning transmission electron microscopy to identify some problems in the fabrication of the devices without any planarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1989

Electron tunnel sensor technology

The recent development of Scanning Tunneling Microscopy technology allows the application of electron tunneling to position detectors for the first time. The vacuum tunnel junction is one of the most sensitive position detection mechanisms available. It is also compact, simple, and requires little power. A prototype accelerometer based on electron tunneling, and other sensor applications of this promising new technology are described.

Waltman, S. B.↗
DOE OSTI2022

Signatures of superconducting triplet pairing in Ni–Ga-bilayer junctions

Ni–Ga bilayers are a versatile platform for exploring the competition between strongly antagonistic ferromagnetic and superconducting phases. We characterize the impact of this competition on the transport properties of highly-ballistic Al/Al 2 O 3 (/EuS)/Ni–Ga tunnel junctions from both experimental and theoretical points of view. While the conductance spectra of junctions comprising Ni (3 nm)–Ga (60 nm) bilayers can be well understood within the framework of earlier results, which associate the emerging main conductance maxima with the junction films’ superconducting gaps, thinner Ni (1.6 nm)–Ga (30 nm) bilayers entail completely different physics, and give rise to novel large-bias (when compared to the superconducting gap of the thin Al film as a reference) conductance-peak subseries that we term conductance shoulders. These conductance shoulders might attract considerable attention also in similar magnetic superconducting bilayer junctions, as we predict them to offer an experimentally well-accessible transport signature of superconducting triplet pairings that are induced around the interface of the Ni–Ga bilayer. We further substantiate this claim performing complementary polarized neutron reflectometry measurements on the bilayers, from which we deduce (1) a nonuniform magnetization structure in Ga in a several nanometer-thick area around the Ni–Ga boundary and can simultaneously (2) satisfactorily fit the obtained data only considering the paramagnetic Meissner response scenario. While the latter provides independent experimental evidence of induced triplet superconductivity inside the Ni–Ga bilayer, the former might serve as the first experimental hint of its potential microscopic physical origin. Finally, we introduce a simple phenomenological toy model to confirm also from the theoretical standpoint that superconducting triplet pairings around the Ni–Ga interface can indeed lead to the experimentally observed conductance shoulders, which convinces that our claims are robust and physically justified. Arranging our work in a broader context, we expect that Ni–Ga-bilayer junctions could have a strong potential for future superconducting-spintronics applications whenever an efficient engineering of triplet-pairing superconductivity is required.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations

The end of Dennard scaling, which facilitated proportional increases in computing power without added energy costs until the mid-2000s, has underscored the urgent need for innovative semiconductor devices that can enhance energy efficiency. Tunnel field-effect transistors (TFETs) have emerged as promising candidates to surpass the energy efficiency of conventional metal oxide semiconductor field-effect transistors (MOSFETs). Unlike MOSFETs, which rely on thermionic emission to overcome the source-channel potential barrier, TFETs operate through quantum tunneling, potentially enabling sub-60 mV dec −1 subthreshold swing (SS) for low-voltage operation. However, lateral TFETs have faced challenges in achieving adequate on-state current (I ON ) and a broad SS operation window, limiting their practical utility. This review article advocates for areal TFETs, which utilize face-to-face tunnel junctions that ideally offer step-function current turn-on characteristics and allow I ON to scale with device area rather than width. We highlight recent advancements in integrating 2D materials into tunneling structures, which could facilitate efficient band-to-band tunneling through atomically thin layers, while addressing challenges of gate field screening. We then discuss the nearer-term prospects of epitaxial areal TFETs comprising III–V compound semiconductors and group-IV semiconductors based on recent experimental progress. The review examines both quantum mechanical and semiclassical modeling approaches for TFETs, including techniques to reduce the computational complexity. The article delves into ongoing challenges in material synthesis, interface engineering, device fabrication, and integration pathways, concluding with recommendations for future research directions to overcome the fundamental power density limitations of conventional transistor technology.

2D materials↗
NASA NTRS1980

Cascade Solar Cell Workshop report

Issues related to the feasibility, research and development, and demonstration of a 30% AMO cascade solar cell discussed include the material selection, growth and fabrication techniques, and device development strategy for a monolithic (two terminal) cascade cell, a hybrid (four terminal) cascade cell, and a spectral splitting device (three cells). Workshop recommendations include: (1) initiate a long range research program to develop a three junction, monolithic, cascade cell using either AlGaAsSb-GaAsSb or AlGaInAs-GaInAs material system; (2) emphasize OM-CVD epitaxial growth technique, perhaps combined with other technologies in the near term to obtain tunnel junctions; (3) develop a two junction device first; (4) initiate a cascade solar cell modeling program to study and compare performance of two and four terminal cascade devices exposed to electron and proton irradiation; and (5) encourage and be open to new ideas for developing four terminal, hybrid, cascade cells exploiting novel component cell interconnect technologies.

Hutchby, J. A.↗
NASA NTRS1991

Interacting and self-organized two-level states in tunnel barriers

The excess low-frequency 1/f noise and discrete two-level resistance fluctuations (TLFs) were studied in small-area NbN-MgO-NbN tunnel junctions with a high, low-temperature density of active defects. Strong and evolving interactions between large TLFs indicate that these fluctuations result from the self-organization of interacting defect elements. In the low-T tunneling regime, an unusual slowing down of the rates and a decrease in amplitude with increasing T is sometimes observed indicative of a thermally induced change in the self-organized two-level state.

Pesenson, L.↗
NASA NTRS1998

Carbon Nanotube Based Molecular Electronics

Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

Srivastava, Deepak↗
DOE OSTI2024

Defect‐Free Nanowelding of Bilayer SnSe Nanoplates

Nanowelding is a bottom‐up technique to create custom‐designed nanostructures and devices beyond the precision of lithographic methods. Here, a new technique is reported based on anisotropic lubricity at the van der Waals interface between monolayer and bilayer SnSe nanoplates and a graphene substrate to achieve precise control of the crystal orientation and the interface during the welding process. As‐grown SnSe monolayer and bilayer nanoplates are commensurate with graphene's armchair direction but lack commensuration along graphene's zigzag direction, resulting in a reduced friction along that direction and a rail‐like, 1D movement that permits joining nanoplates with high precision. This way, molecular beam epitaxially grown SnSe nanoplates of lateral sizes 30–100 nm are manipulated by the tip of a scanning tunneling microscope at room temperature. In situ annealing is applied afterward to weld contacting nanoplates without atomic defects at the interface. This technique can be generalized to any van der Waals interfaces with anisotropic lubricity and is highly promising for the construction of complex quantum devices, such as field effect transistors, quantum interference devices, lateral tunneling junctions, and solid‐state qubits.

2D ferroelectrics↗
NASA NTRS2012

Inverted Three-Junction Tandem Thermophotovoltaic Modules

An InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell has been investigated to utilize more of the blackbody spectrum (from a 1,100 C general purpose heat source GPHS) efficiently. The tandem consists of three vertically stacked subcells, a 0.74-eV InGaAs cell, a 0.6- eV InGaAs cell, and a 0.55-eV InGaAs cell, as well as two interconnecting tunnel junctions. A greater than 20% TPV system efficiency was achieved by another group with a 1,040 C blackbody using a single-bandgap 0.6- eV InGaAs cell MIM (monolithic interconnected module) (30 lateral junctions) that delivered about 12 V/30 or 0.4 V/junction. It is expected that a three-bandgap tandem MIM will eventually have about 3 this voltage (1.15 V) and about half the current. A 4 A/cm2 would be generated by a single-bandgap 0.6-V InGaAs MIM, as opposed to the 2 A/cm2 available from the same spectrum when split among the three series-connected junctions in the tandem stack. This would then be about a 50% increase (3xVoc, 0.5xIsc) in output power if the proposed tandem replaced the single- bandgap MIM. The advantage of the innovation, if successful, would be a 50% increase in power conversion efficiency from radioisotope heat sources using existing thermophotovoltaics. Up to 50% more power would be generated for radioisotope GPHS deep space missions. This type of InGaAs multijunction stack could be used with terrestrial concentrator solar cells to increase efficiency from 41 to 45% or more.

Wojtczuk, Steven↗
NASA NTRS2019

Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications

Superconducting-insulating-superconducting (SIS) trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/ Ti0.4N0.6, deposited at 450°C, in a thermal ALD reactor on Al2O3-coated silicon. The conformal nature of the ALD process provides excellent step coverage of superconducting and insulating films. The film thickness of a single ALD cycle being one mono-layer, allows us to precisely control the tunnel-barrier insulator thickness by counting the number of ALD cycles during the insulator deposition step. Tunnel-junctions with critical current 500 A/cm2 are reported. Fabrication of Josephson Junctions and progress toward development of a single-element ALD Superconducting Quantum Interference Device (SQUID) will be discussed

Atomic Layer Definition↗
NASA NTRS1980

Fabrication of AlGaAs/GaAs cascade solar cell by LPE

Stacking two or more photovoltaic junctions in electrical and optical series results in higher conversion efficiency since each junction can be tailored to respond more efficiently to a smaller range of photon energies. An efficiency of about 30 percent was predicted for a two junction cascade cell having the optimum bandgap values. A number of III-V materials systems were considered for use in fabricating cascade solar cells. The Al-Ga-As system is attractive from a developmental standpoint since it employs a proven materials system that is closely lattice matched throughout its compositional range. This system employs a GaAs low bandgap cell and 1.9 eV AlGaAs high bandgap cell connected by an AlGaAs tunnel junction. Although this cell does not possess the optimum bandgap values, an efficiency of 25 percent was predicted at 300 K under AMO, 1 sun illumination.

Bedair, S. M.↗