Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “TiN”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14

Charge radii measurements of exotic tin isotopes in the proximity of $N=50$ and $N=82$

We report nuclear charge radii for the isotopes $^{104-134}$Sn, measured using two different collinear laser spectroscopy techniques at ISOLDE-CERN. These measurements clarify the archlike trend in charge radii along the isotopic chain and reveal an odd-even staggering that is more pronounced near the $N=50$ and $N=82$ shell closures. The observed local trends are well described by both nuclear density functional theory and valence space in-medium similarity renormalization group calculations. Both theories predict appreciable contributions from beyond-mean-field correlations to the charge radii of the neutron-deficient tin isotopes. The models fall short, however, of reproducing the magnitude of the known $B(E2)$ transition probabilities, highlighting the remaining challenges in achieving a unified description of both ground-state properties and collective phenomena.

FOS: Physical sciences↗

Ovonic switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

Baxter, C. R.↗

The influence of acceleration forces on nucleation, solidification, and deformation processes in tin single crystals

An apparatus was designed and assembled to directionally solidify single crystals under the influence of acceleration forces of various magnitudes. The investigation conducted showed that acceleration gradients produce a preferred growth orientation effect not previously observed for tin. Convection currents at approximately 5-g encourage multiple nucleation and subsequent random orientation of growth direction. Deformation effects such as recrystallization and twinning are observed at acceleration levels greater than 2-g.

Johnston, M. H.↗

Time-delay-and-integration charge-coupled devices using tin oxide gate technology

Doped tin oxide gates are used in a time-delay-and-integration (TDI) CCD scheme in an effort to develop a stable transparent gate technology. Design characteristics of the system are discussed, including 2 sections of 10 by 9 integration stages, four-phase buried channel construction, and 10 input parallel-in/serial-out output shift register at a video rate of 1.25 MHz. A quantum efficiency of 65% with smooth spectral response is attained by front surface imaging. The suitability of the system for the Landsat program is discussed in terms of TDI-CCD operating parameters.

Thompson, L. L.↗

Molybdenum-tin as a solar cell metallization system

The operations of solar cell manufacture are briefly examined. The formation of reliable, ohmic, low-loss, and low-cost metal contacts on solar cells is a critical process step in cell manufacturing. In a commonly used process, low-cost metallization is achieved by screen printing a metal powder-glass frit ink on the surface of the Si surface and the conductive metal powder. A technique utilizing a molybdenum-tin alloy for the metal contacts appears to lower the cost of materials and to reduce process complexity. The ink used in this system is formulated from MoO3 with Sn powder and a trace amount of titanium resonate. Resistive losses of the resulting contacts are low because the ink contains no frit. The MoO3 is finally melted and reduced in forming gas (N2+H2) to Mo metal. The resulting Mo is highly reactive which facilitates the Mo-Si bonding.

Boyd, D. W.↗

Electron loss study of the native oxide of tin

Using electron loss spectroscopy in combination with ion beam depth profiling, it has been established that the oxide of tin formed by electropolishing followed by room temperature aging is metal free and composed of a mixture of SnO2 and SnO. In a fresh oxide layer, the SnO2 is confined to the outer portion of the predominantly SnO oxide. In an aged oxide layer, SnO2 is present up to the oxide/metal interface with an ever decreasing concentration as the interface is approached.

Bevolo, A. J.↗

On the low-lying states of TiN

A series of CAS SCF and multi-reference CI calculations are used to describe the lowest states of TiN. The bonding in all states is described as a triple bond involving the Ti 3d orbitals. The system has some ionic character as seen from both population analysis and dipole moment. The origins of the excited states are discussed.

Bauschlicher, C. W., Jr.↗