SEARCH · Engineering Papers

Results for “TRAPPING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14

All sources NASA NTRS DOE OSTI

NASA NTRS1993

Locating Electron Traps In A CCD

"Pocket pumping" is technique for mapping sizes of electron-trapping defects and picture elements within which traps located in charge-coupled device (CCD). Two kinds of traps: forward and reverse. Pocket pumping relies on fact that in terms of charges measurable by external circuitry, forward traps affect only forward, while reverse traps affect only reverse, transfer of charge along row or column of picture elements. Charges in picture elements shifted back and forth many times to amplify trapping effect by repetition. Traps smaller than 1 electron detected by this method.

Janesick, James↗

NASA NTRS1996

LET spectra of trapped anomalous cosmic rays in low-Earth orbit

Observations aboard Cosmos satelites discovered trapped anomalous cosmic rays (ACRs), tracked the variation in their intensity in 1986-1988, and measured their fluence, spectrum, and composition at solar minimum in the previous solar cycle. The MAST instrument aboard the SAMPEX satellite has observed trapped anomalous cosmic rays in the present solar cycle, confirmed the general features of the Cosmos data, and provided the first detailed observations of trapped ACRs. In this paper we apply theoretical modeling of trapped ACRs, which is shown to provide a reasonably good description of both the Cosmos and SAMPEX data, to calculate the integral linear-energy-transfer (LET) spectra due to trapped ACRs in typical low-Earth orbits. We compare these calculations with the LET spectra produced by galactic cosmic rays (GCRs) and non-trapped ACRs in order to assess the relative radiation hazard posed by trapped ACRs.

Tylka, A. J.↗

NASA NTRS2003

Review of the High Performance Antiproton Trap (HiPAT) Experiment at the Marshall Space Flight Center

The significant energy density of matter-antimatter annihilation is attractive to the designers of future space propulsion systems, with the potential to offer a highly compact source of power. Many propulsion concepts exist that could take advantage of matter-antimatter reactions, and current antiproton production rates are sufficient to support basic proof-of-principle evaluation of technology associated with antimatter- derived propulsion. One enabling technology for such experiments is portable storage of low energy antiprotons, allowing antiprotons to be trapped, stored, and transported for use at an experimental facility. To address this need, the Marshall Space Flight Center's Propulsion Research Center is developing a storage system referred to as the High Performance Antiproton Trap (HiPAT) with a design goal of containing 10(exp 12) particles for up to 18 days. The HiPAT makes use of an electromagnetic system (Penning- Malmberg design) consisting of a 4 Telsa superconductor, high voltage electrode structure, radio frequency (RF) network, and ultra high vacuum system. To evaluate the system normal matter sources (both electron guns and ion sources) are used to generate charged particles. The electron beams ionize gas within the trapping region producing ions in situ, whereas the ion sources produce the particles external to the trapping region and required dynamic capture. A wide range of experiments has been performed examining factors such as ion storage lifetimes, effect of RF energy on storage lifetime, and ability to routinely perform dynamic ion capture. Current efforts have been focused on improving the FW rotating wall system to permit longer storage times and non-destructive diagnostics of stored ions. Typical particle detection is performed by extracting trapped ions from HiPAT and destructively colliding them with a micro-channel plate detector (providing number and energy information). This improved RF system has been used to detect various plasma modes for both electron and ion plasmas in the two traps at MSFC, including axial, cyclotron, and diocotron modes. New diagnostics are also being added to HiPAT to measure the axial density distribution of the trapped cloud to match measured RF plasma modes to plasma conditions.

Pearson, J. B.↗

NASA NTRS2004

Recent Operational Experience with the Internal Thermal Control System Dual-Membrane Gas Trap

A dual-membrane gas trap is currently used to remove gas bubbles from the Internal Thermal Control System (ITCS) coolant on board the International Space Station. The gas trap consists of concentric tube membrane pairs, comprised of outer hydrophilic tubes and inner hydrophobic fibers. Liquid coolant passes through the outer hydrophilic membrane, which traps the gas bubbles. The inner hydrophobic fiber allows the trapped gas bubbles to pass through and vent to the ambient atmosphere in the cabin. The gas removal performance and operational lifetime of the gas trap have been affected by contamination in the ITCS coolant. However, the gas trap has performed flawlessly with regard to its purpose of preventing gas bubbles from causing depriming, overspeed, and shutdown of the ITCS pump. This paper discusses on-orbit events over the course of the last year related to the performance and functioning of the gas trap.

Leimkuehler, Thomas O.↗

NASA NTRS2011

Evaluation of Pulse Counting for the Mars Organic Mass Analyzer (MOMA) Ion Trap Detection Scheme

The Mars Organic Mass Analyzer is being developed at Goddard Space Flight Center to identify organics and possible biological compounds on Mars. In the process of characterizing mass spectrometer size, weight, and power consumption, the use of pulse counting was considered for ion detection. Pulse counting has advantages over analog-mode amplification of the electron multiplier signal. Some advantages are reduced size of electronic components, low power consumption, ability to remotely characterize detector performance, and avoidance of analog circuit noise. The use of pulse counting as a detection method with ion trap instruments is relatively rare. However, with the recent development of high performance electrical components, this detection method is quite suitable and can demonstrate significant advantages over analog methods. Methods A prototype quadrupole ion trap mass spectrometer with an internal electron ionization source was used as a test setup to develop and evaluate the pulse-counting method. The anode signal from the electron multiplier was preamplified. The an1plified signal was fed into a fast comparator for pulse-level discrimination. The output of the comparator was fed directly into a Xilinx FPGA development board. Verilog HDL software was written to bin the counts at user-selectable intervals. This system was able to count pulses at rates in the GHz range. The stored ion count nun1ber per bin was transferred to custom ion trap control software. Pulse-counting mass spectra were compared with mass spectra obtained using the standard analog-mode ion detection. Prelin1inary Data Preliminary mass spectra have been obtained for both analog mode and pulse-counting mode under several sets of instrument operating conditions. Comparison of the spectra revealed better peak shapes for pulse-counting mode. Noise levels are as good as, or better than, analog-mode detection noise levels. To artificially force ion pile-up conditions, the ion trap was overfilled and ions were ejected at very high scan rates. Pile-up of ions was not significant for the ion trap under investigation even though the ions are ejected in so-called 'ion-micro packets'. It was found that pulse counting mode had higher dynamic range than analog mode, and that the first amplification stage in analog mode can distort mass peaks. The inherent speed of the pulse counting method also proved to be beneficial to ion trap operation and ion ejection characterization. Very high scan rates were possible with pulse counting since the digital circuitry response time is so much smaller than with the analog method. Careful investigation of the pulse-counting data also allowed observation of the applied resonant ejection frequency during mass analysis. Ejection of ion micro packets could be clearly observed in the binned data. A second oscillation frequency, much lower than the secular frequency, was also observed. Such an effect was earlier attributed to the oscillation of the total plasma cloud in the ion trap. While the components used to implement pulse counting are quite advanced, due to their prevalence in consumer electronics, the cost of this detection system is no more than that of an analog mode system. Total pulse-counting detection system electronics cost is under $250

Van Amerom, Friso H.↗

NASA NTRSDate not supplied

Pressure Fluctuations due to ‘Trapped Waves’ in Heated Jets

An experimental study was conducted to investigate the presence and characteristics of ‘trapped waves’ in the near field of a small axisymmetric jet at heated conditions. Trapped waves occur within the potential core of compressible jets and manifest as distinct peaks in the unsteady pressure spectra measured just outside the jet near the nozzle exit. The existence and properties of the trapped wave spectral peaks in round and rectangular jets of various sizes in subsonic and supersonic conditions were studied in our recent experiments, at cold conditions [7]. The current work extends the study to heated jets. Pressure fluctuation spectra near the nozzle exit are analyzed for a small (D = 6.35 mm) axisymmetric jet at stagnation temperature ratios up to 1.6. It is shown that trapped waves continue to persist in heated jets. At sufficiently high Mach numbers, one of the trapped wave harmonics emerges as screech tone, a behavior consistent with that observed in cold jets. For a given Mach number, the frequencies of both trapped waves and screech increase with jet temperature with no significant change occurring in their amplitudes. The Strouhal numbers based on jet diameter for the trapped waves and screech continue to follow similar scaling laws as observed previously with cold jets.

aeroacoustics↗

DOE OSTI2015

Observation of structural relaxation during exciton self-trapping via excited-state resonant impulsive stimulated Raman spectroscopy

We detect the change in vibrational frequency associated with the transition from a delocalized to a localized electronic state using femtosecond vibrational wavepacket techniques. The experiments are carried out in the mixed-valence linear chain material [Pt(en){sub 2}][Pt(en){sub 2}Cl{sub 2}]⋅(ClO{sub 4}){sub 4} (en = ethylenediamine, C{sub 2}H{sub 8}N{sub 2}), a quasi-one-dimensional system with strong electron-phonon coupling. Vibrational spectroscopy of the equilibrated self-trapped exciton is carried out using a multiple pulse excitation technique: an initial pump pulse creates a population of delocalized excitons that self-trap and equilibrate, and a time-delayed second pump pulse tuned to the red-shifted absorption band of the self-trapped exciton impulsively excites vibrational wavepacket oscillations at the characteristic vibrational frequencies of the equilibrated self-trapped exciton state by the resonant impulsive stimulated Raman mechanism, acting on the excited state. The measurements yield oscillations at a frequency of 160 cm{sup −1} corresponding to a Raman-active mode of the equilibrated self-trapped exciton with Pt-Cl stretching character. The 160 cm{sup −1} frequency is shifted from the previously observed wavepacket frequency of 185 cm{sup −1} associated with the initially generated exciton and from the 312 cm{sup −1} Raman-active symmetric stretching mode of the ground electronic state. We relate the frequency shifts to the changes in charge distribution and local structure that create the potential that stabilizes the self-trapped state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2015

Theoretical study of time-resolved luminescence in semiconductors. III. Trap states in the band gap

In the third part of this series, we study the influence of trap states in the band gap of semiconductors on the time-resolved luminescence decay (TRL) after a pulsed excitation. The results based on simulations with Synopsys TCAD{sup ®} and analytical approximations are given for p-doped Cu(In,Ga)Se{sub 2} as a working example. We show that a single trap can be mostly described by two parameters which are assigned to minority carrier capture and emission. We analyze their influence on the luminescence decay and study the difference between a single trap and an energetic Gaussian trap distribution. It is found that trap states artificially increase the TRL decay and obscure the recombination dynamics. Thus, there is a demand for experimental methods which can reveal the recombination of minority carriers in a TRL experiment without trapping effect. In this regard, a variation of the device temperature, the excitation frequency, the injection level, as well as a bias illumination may be promising approaches. We study these methods, discuss advantages and disadvantages, and show experimental TRL for prove of concept. At the end, we validate our approach of simulating only band-to-band radiative recombination although photoluminescence spectra often exhibit free-to-bound radiative recombination of charge carriers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Trapped charge densities in Al{sub 2}O{sub 3}-based silicon surface passivation layers

In Al{sub 2}O{sub 3}-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al{sub 2}O{sub 3} layers are grown by atomic layer deposition with very thin (∼1 nm) SiO{sub 2} or HfO{sub 2} interlayers or interface layers. In SiO{sub 2}/Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al{sub 2}O{sub 3}. In Al{sub 2}O{sub 3}/SiO{sub 2}/Al{sub 2}O{sub 3} or Al{sub 2}O{sub 3}/HfO{sub 2}/Al{sub 2}O{sub 3} stacks, very high total charge densities of up to 9 × 10{sup 12} cm{sup −2} are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al{sub 2}O{sub 3} layer thickness between silicon and the HfO{sub 2} or the SiO{sub 2} interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al{sub 2}O{sub 3} layers opens the possibility to engineer the field-effect passivation in the solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Ablation loading of barium ions into a surface-electrode trap

Trapped-ion quantum information processing may benefit from qubits encoded in isotopes that are practically available in only small quantities, e.g., due to low natural abundance or radioactivity. Laser ablation provides a method of controllably liberating neutral atoms or ions from low-volume targets, but energetic ablation products can be difficult to confine in the small ion-electrode distance, micron-scale microfabricated traps amenable to high-speed, high-fidelity manipulation of ion arrays. Here, we investigate ablation-based ion loading into surface-electrode traps of different sizes to test a model describing ion loading probability as a function of effective trap volume and other trap parameters. We characterize loading of ablated barium from a metallic source in two cryogenic surface-electrode traps with 730 and 50 μm ion-electrode distances. Furthermore, our loading rate agrees with a predictive analytical model, providing insight for the confinement of limited-quantity species of interest for quantum computing, simulation, and sensing.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2025

Surface Trap Dynamics and Gamma‐Ray Detection Enhancement in Passivated FAPbBr 3 Perovskite Crystals

Perovskite‐based direct radiation detectors offer a compelling platform for room‐temperature gamma spectroscopy due to their high sensitivity, tunable optoelectronic properties, and compatibility with solution processing. While prior studies on formamidinium lead tribromide (FAPbBr 3 ) have shown that surface passivation mitigates deep trap state impact on the charge collection efficiency (CCE), the influence of surface‐based shallow traps on time‐resolved detector response remains largely unexplored. In this article, a digital signal processing (DSP) method is applied to analyze waveform rising edge dynamics in FAPbBr 3 single‐crystal detectors, identifying prompt and delayed charge collection components. Using the second derivative of the collected charge signal, the onset of shallow trap reemission is isolated, occurring 1.1 µs after carrier generation. Surface passivation suppressed deep trap states, shifting carrier occupancy toward shallower traps and extending the temporal window of delayed charge collection. This delayed contribution correlates with measurable changes in the temporal and amplitude distributions of detector events. By leveraging time‐domain filtering informed by these dynamics, a selective enhancement in signal quality and gamma peak‐to‐Compton ratio (PCR) is achieved, while preserving over 90% of photoelectric events. An improvement in the PCR to 1.80, from the original 1.09, is enabled by focusing on high collection efficiency events corresponding to reemitted carriers in the 1.1 to 3 µs range after the generation event. These results demonstrate a pathway for leveraging shallow trap dynamics to enhance spectral fidelity in time‐resolved perovskite detectors.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Hole Trapping at Acceptor Impurities and Alloying Elements in AlN

Hole localization is a root cause of difficulties in p-type doping of aluminum nitride. Herein, the stability of localized holes in AlN and their susceptibility to self-trapping within bulk material or in the presence of isovalent elements and acceptor impurities are calculated. It is found that self-trapped holes are metastable in bulk AlN, and also exhibit a very low barrier to detrapping. However, holes become trapped in the presence of acceptor impurities as well as isovalent elements such as B, In, and Sc, and may contribute to the broad luminescence observed in AlN alloys. It is also found that hole trapping contributes to the large ionization energies for acceptors in AlN. Most acceptors can also trap a second hole, becoming positively charged and further exacerbating difficulties in doping aluminum nitride p type. Furthermore, the stability of trapped holes is found to scale with atomic size mismatch to Al.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2021

Optimizing the lean hydrocarbon NO x trap: Sequential and dual-layer configurations

Vehicular emission control catalysts are ineffective in eliminating CO, hydrocarbons, and NO x during engine cold-start when exhaust temperatures are below 200 °C. In this study the performance of coupled low temperature NO x , n-C 12 H 26 (C 12 ), and C 3 H 6 trapping, release and conversion for a series of model Lean Hydrocarbon NO x Trap (LHCNT) catalysts are examined. Pd and Pt supported on small-pore (SSZ-13) and large-pore (BEA) zeolites are selected based on the performance during transient NO and C 12 uptake, release and conversion experiments. These catalysts are combined into sequential (Pt + Pd/BEA → Pd/SSZ-13; Pd/SSZ-13 → Pt + Pd/BEA) and dual-layer (Pt + Pd/BEA top, Pd/SSZ-13 bottom) configurations in an attempt to improve the trapping and conversion performance. While all three configurations trap between 75 and 100 μmolNO x /g-cat, the Pd/SSZ-13 → Pt + Pd/BEA sequential configuration is most effective in simultaneously trapping C 12 and NO in the presence of H 2 O, resulting in excellent NO and C 12 storage below 100 °C with release and/or conversion at or above 200 °C. For each configuration, C 12 oxidation lights-off below 300 °C and NO oxidation achieves ~35 % conversion in the absence of C 12 . Neither the presence of C 12 nor the order of the sequential configuration has a significant impact on NO uptake. C 12 significantly delays NO and NO 2 desorption to temperatures exceeding 300 °C. The more compact dual-layer catalyst is most effective in forming NO 2 as the release temperature lines up with the maximum NO conversion temperature but traps less C 12 than the sequential configurations. The addition of C 3 H 6 in the feed on the dual-layer catalyst leads to further delay in the NO x desorption as well as increased NO and C 12 conversion at high temperatures. Here, the overall findings provide guidance in the optimizing LHCNT configuration for realistic feeds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Strain-Induced Trapping of Indirect Excitons in MoSe 2 /WSe 2 Heterostructures

Understanding and control of excitons in transition metal dichalcogenide (TMD) materials are essential for the exploration of the rich many-body physics in TMDs and their applications in photonic and optoelectronic devices. Local strain modulation has been utilized as an effective approach for creating potential traps and localizing intralayer excitons in TMD monolayers. Here, we investigate the effect of strains on indirect excitons in TMD heterostructures. The emergence of narrow spectral peaks from the strained sites together with their drastically reduced lifetimes indicates the formation of potential traps in the heterostructures and the trapping of indirect excitons in them. The absence of photon-antibunching from these trapped indirect excitons further reveals their weak localization in the potential traps. Here, our study indicates that, compared to the case of intralayer excitons, narrower potential traps are required for obtaining highly localized indirect excitons due to their unique properties. These findings have important implications for creating long-wavelength quantum emitters in TMD heterostructures and the exploration of indirect exciton condensation and motion in TMDs.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Global sound modes in mirror traps with anisotropic pressure

Global oscillations of inhomogeneous plasma with frequencies close to the bounce frequency of ions in mirror traps have been studied. It has been shown that, in some cases, the sound can be reflected from the axial plasma inhomogeneity. The ideal magnetohydrodynamic (MHD) model with Chew-Goldberger-Low approximation has been utilized to determine conditions of existence of the standing waves in the mirror-confined plasma. Linearized wave equation for the longitudinal plasma oscillations in thin anisotropic inhomogeneous plasma with finite β has been derived. The wave equation has been treated numerically. The oscillations are studied for the case of the trap with partially filled loss-cone and the trap with sloshing ions. It has been shown that in cells of the multiple-mirror trap standing waves can exist. The frequency of the wave is of the order of the mean bounce-frequency of ions. In the trap with sloshing ions, the mode supported by the pressure of fast ions could exist. The results of oscillations observation in the experiment on the Gas Dynamic Trap have been presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2014

Towards high efficiency thin-film crystalline silicon solar cells: The roles of light trapping and non-radiative recombinations

Thin-film solar cells based on silicon have emerged as an alternative to standard thick wafers technology, but they are less efficient, because of incomplete absorption of sunlight, and non-radiative recombinations. In this paper, we focus on the case of crystalline silicon (c-Si) devices, and we present a full analytic electro-optical model for p-n junction solar cells with Lambertian light trapping. This model is validated against numerical solutions of the drift-diffusion equations. We use this model to investigate the interplay between light trapping, and bulk and surface recombination. Special attention is paid to surface recombination processes, which become more important in thinner devices. These effects are further amplified due to the textures required for light trapping, which lead to increased surface area. We show that c-Si solar cells with thickness of a few microns can overcome 20% efficiency and outperform bulk ones when light trapping is implemented. The optimal device thickness in presence of light trapping, bulk and surface recombination, is quantified to be in the range of 10–80 μm, depending on the bulk quality. These results hold, provided the effective surface recombination is kept below a critical level of the order of 100 cm/s. We discuss the possibility of meeting this requirement, in the context of state-of-the-art techniques for light trapping and surface passivation. We show that our predictions are within the capability of present day silicon technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Disorder improves nanophotonic light trapping in thin-film solar cells

We present a systematic experimental study on the impact of disorder in advanced nanophotonic light-trapping concepts of thin-film solar cells. Thin-film solar cells made of hydrogenated amorphous silicon were prepared on imprint-textured glass superstrates. For periodically textured superstrates of periods below 500 nm, the nanophotonic light-trapping effect is already superior to state-of-the-art randomly textured front contacts. The nanophotonic light-trapping effect can be associated to light coupling to leaky waveguide modes causing resonances in the external quantum efficiency of only a few nanometer widths for wavelengths longer than 500 nm. With increasing disorder of the nanotextured front contact, these resonances broaden and their relative altitude decreases. Moreover, overall the external quantum efficiency, i.e., the light-trapping effect, increases incrementally with increasing disorder. Thereby, our study is a systematic experimental proof that disorder is conceptually an advantage for nanophotonic light-trapping concepts employing grating couplers in thin-film solar cells. The result is relevant for the large field of research on nanophotonic light trapping in thin-film solar cells which currently investigates and prototypes a number of new concepts including disordered periodic and quasi periodic textures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2014

Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of extended defects. The recombination at the extended defects produces long, logarithmic decay limiting substantially performance of CdZnTe detectors. This decay is associated with the “electrostatic trapping” of excess holes by the Schottky-type depletion space-charge regions formed around the defects.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗