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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Spiers Memorial Lecture: Next generation chalcogenide-based absorbers for thin-film solar cells

Inorganic-based thin-film photovoltaics (TFPV) represents an important component of the growing low-carbon energy market and plays a vital role in the drive toward lower cost and increased penetration of solar energy. Yet, commercialized thin-film absorber technologies suffer from some non-ideal characteristics, such as toxic or non-abundant element use (e.g., CdTe and Cu(In,Ga)(S,Se) 2 , which bring into question their suitability for terawatt deployment. Numerous promising chalcogenide, halide, pnictide and oxide semiconductors are being pursued to bridge these concerns for TFPV and several promising paths have emerged, both as prospective replacements for the entrenched technologies, and to serve as partner (i.e., higher bandgap) absorbers for tandem junction devices—e.g., to be used with a lower bandgap Si bottom cell. The current perspective will primarily focus on emerging chalcogenide-based technologies and provide both an overview of absorber candidates that have been of recent interest and a deeper dive into an exemplary Cu 2 BaSnS 4 -related family. Altogether, considering the combined needs of high-performance, low-cost, and operational stability, as well as the experiences gained from existing commercialized thin-film absorber technologies, chalcogenide-based semiconductors represent a promising direction for future PV development and also serve to highlight common themes and needs among the broader TFPV materials family.

14 SOLAR ENERGY↗
NASA NTRS1998

Thin Film Sensors for Minimally-Intrusive Measurements in Harsh High Temperature Environment

Advanced thin film sensors are being developed to provide accurate surface temperature, heat flux and strain measurements for components used in hostile propulsion environments. These sensors are sputter deposited and microfabricated directly onto the test articles with no additional bonding agent. The thickness of the sensors is only a few micrometers which creates minimal disturbance of the gas flow over the test surface. Thus thin film sensors have the advantage over conventional wire- based sensors by providing minimally intrusive measurement and having a faster response. These thin film sensors are being developed for characterization of advanced materials and structures in hostile, high-temperature environments, and for validation of design codes. This paper presents the advances of three high temperature thin film sensor technologies developed at NASA Lewis Research Center: thermocouples, heat-flux gages and strain gages. The fabrication techniques of these thin film sensors which include physical vapor deposition, photolithography patterning and lead Wire attachment are described. Sensors demonstrations on a variety of engine materials, including superalloys, ceramics and advanced ceramic matrix composites, in several hostile, high-temperature test environments are presented. The advantages and limitations of thin film sensor technology are also discussed.

Lei, Jih-Fen↗
NASA NTRS2002

Chemical Vapor Deposition for Ultra-lightweight Thin-film Solar Arrays for Space

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power, (W/kg). The use of a polycrystalline chalcopyrite absorber layer for thin film solar cells is considered as the next generation photovoltaic devices. A key technical issues outlined in the 2001 U.S. Photovoltaic Roadmap, is the need to develop low cost, high throughput manufacturing for high-efficiency thin film solar cells. At NASA GRC we have focused on the development of new single-source-precursors (SSPs) and their utility to deposit the chalcopyrite semi-conducting layer (CIS) onto flexible substrates for solar cell fabrication. The syntheses and thermal modulation of SSPs via molecular engineering is described. Thin-film fabrication studies demonstrate the SSPs can be used in a spray CVD process, for depositing CIS at reduced temperatures, which display good electrical properties, suitable for PV devices.

Hepp, Aloysius F.↗
DOE OSTI2020

Edge States Drive Exciton Dissociation in Ruddlesden–Popper Lead Halide Perovskite Thin Films

Efficient photovoltaic cells based on thin films of solution-processed 2D Ruddlesden–Popper hybrid perovskites (RPPs) represent an exciting breakthrough due to their enhanced tunability and chemical stability relative to those fabricated from 3D phases. However, reports of efficient charge separation and current collection are in apparent contradiction with the well-known enhancement of the exciton binding energy in multilayered halide perovskites, which should lower the device’s internal quantum efficiency and voltage. This controversy has led to various proposals for the electronic and physical structure of RPP thin films, including phase inhomogeneity as the driving force for exciton dissociation and transport. We address this apparent paradox in high-quality hot-cast RPP films by correlating ultrafast transient absorption spectroscopy with X-ray scattering measurements. We show that a hot-casting fabrication method produces highly phase pure n = 3 (BA) 2 (MA) n-1 Pb n I 3n+1 RPP structures. The high-phase purity and large grain sizes allow us to observe vertical transport of excitons via a diffusive process and allow us to determine that charge separation is primarily driven by dissociation at surface localized subgap electronic states. Furthermore, we analyze the differential absorption kinetics in films of varying thickness to directly determine that the excitonic diffusion constant is ~0.18 cm 2 s –1 . We propose that a surface localized structural distortion, observed using surface selective grazing incidence X-ray scattering measurements, is responsible for the creation of the surface localized defect states. We find that the density and spatial distribution of these defect states is a function of preparation conditions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Is 3D/2D Passivation a Secret to Success for Polycrystalline Thin-Film Solar Cells?

Three leading thin-film photovoltaic (PV) technologies - cadmium telluride (CdTe), CuIn1-xGaxSe2 (CIGS), and perovskite solar cells (PSCs) - are all polycrystalline, but otherwise appear to have little in common. A comprehensive examination of these technologies, however, reveals a common theme: the formation of two-dimensional (2D) van der Waals materials at three-dimensional (3D) absorber interfaces and grain boundaries. In CdTe, the 2D compound is CdCl2; in CIGS, it is XInSe2 (X= K, Rb, Cs) with X depending on the heavy-alkali post-deposition treatment used; and in lead halide PSCs, PbI2 forms naturally, but many new, more stable, 2D perovskites have also been incorporated. Generally, these 2D interfacial materials are present not by design, but instead have evolved from their 3D counterparts during standard device processing. Here, new data, together with evidence compiled from the literature, are presented to illustrate both the existence of 3D/2D interfaces in CdTe, CIGS, and PSCs, and their correlation with improved passivation and device performance. This suggests that 3D/2D passivation may be a heretofore unappreciated key to successful polycrystalline thin-film PV. Finally, the desired attributes of successful low-dimensional layers are presented with rational design strategies for next generation polycrystalline solar cells.

3D/2D↗
DOE OSTI2021

Facile microwave synthesis of zirconium metal-organic framework thin films on gold and silicon and application to sensor functionalization

Zirconium-based metal-organic frameworks, including UiO-66 and related frameworks, have become the focus of considerable research in the area of chemical warfare agent (CWA) decontamination. However, little work has been reported exploring these metal-organic frameworks (MOFs) for CWA sensing applications. For many sensing approaches, the growth of high-quality thin films of the active material is required, and thin film growth methods must be compatible with complex device architectures. Several approaches to synthesize thin films of UiO-66 have been described but many of these existing methods are complex or time consuming. In this work, we describe the development of a simple and rapid microwave assisted synthesis of oriented UiO-66 thin films on unmodified silicon (Si) and gold (Au) substrates. Thin films of UiO-66 and UiO-66-NH 2 can be grown in as little as 2 min on gold substrates and 30 min on Si substrates. The film morphology and orientation are characterized and the effects of reaction time and temperature on thin film growth on Au are investigated. Both reaction time and temperature impact the overgrowth of protruding discrete crystallites in the thin film layer but, surprisingly, no strong correlation is observed between film thickness and reaction time or temperature. We also briefly describe the synthesis of Zr/Ce solid solution thin films of UiO-66 on Au and report the first synthesis of a solid solution thin film MOF. Finally, we demonstrate the utility of the microwave method for the facile functionalization of two sensor architectures, plasmonic nanohole arrays and microresonators, with UiO-66 thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Interplay between Cation “Coloring” and Stereochemically Active Lone Pairs in AgBiS 2 Thin Films

Solution-processed AgBiS 2 thin films were fabricated using novel thiol− amine precursor inks to investigate the stereochemical activity of Bi 3+ 6s 2 lone pairs and their impact on the structure. A dual-space analysis combining Bragg diffraction and hard X-ray photoelectron spectroscopy (HAXPES) revealed a rock salt-like average structure with local distortions linked to cation coloring. Density functional theory (DFT) and crystal orbital Hamilton population (COHP) analyses confirmed that local Bi-rich and Ag-rich nanodomains amplify stereochemical activity, whereas more mixed and cation-order nanodomains are less stereochemically active. This local, nanoscopic mixing of segregated and ordered domains would indeed explain an average Fm3̅m structure that is rock salt-like and that does not manifest the full anharmonicity and noncentrosymmetry evidenced in canonical structures with stereochemical expression. These findings provide insights into the local structural and electronic complexities governing the optoelectronic properties of AgBiS 2 thin films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1995

Changes in chemical and optical properties of thin film metal mirrors on LDEF

Thin films of the metals Cu, Ni, Pt, Au, Sn, Mo, and W deposited on fused silica flats were exposed at ambient temperature on the leading and trailing faces of the LDEF. Reflectances of these films were measured from 250 to 2500 nm and compared with controls. The exposed films were subjected to the LDEF external environment including atomic oxygen, molecular contamination, and solar ultraviolet. Major changes in optical and infrared reflectance were seen for Cu, Mo, Ni, and W films on the leading face of LDEF and are attributed to partial conversion of metal to metal oxide. Smaller changes in optical properties are seen on all films and are probably caused by thin contaminant films deposited on top of the metal. The optical measurements are correlated with film thickness measurements, x-ray photoelectron spectroscopy, optical calculations, and, in the case of Cu, with x-ray diffraction measurements. In a few cases, comparisons with results from a similar UAH experiment on STS-8 have been drawn.

Peters, Palmer N.↗
DOE OSTI2020

Phase evolution and amorphous stability upon solid-state reaction in superlattice like Ge–Sb–Te combinatorial thin-film

In this paper, the superlattice-like (SLL) Ge–Sb–Te combinatorial thin films were prepared by using a high-throughput ion beam sputtering system. The phase evolution and amorphous stability of such films undergoing heat treatment as a function of the coating sequence and modulation period were systematically studied. The composition structure diagram was constructed via an automated process of data obtained by high-throughput synchrotron micro-X-ray diffraction and lab-based micro-X-ray fluorescence. Furthermore, the element distribution and microstructure in the depth direction of the SLL thin films were characterized with time-of-flight secondary ion mass spectrometry and transmission electron microscopy, respectively. These studies demonstrated that the coating sequence has a significant effect on the element distribution in the as-deposited SLL thin films and the structure of the final product upon solid-state reaction. Reducing the modulation period of the SLL thin film improves the stability of the amorphous Ge–Sb–Te phase. This work lays a solid foundation for the rational design of SLL Ge–Sb–Te thin films to improve their performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1997

Advances in Thin Film Sensor Technologies for Engine Applications

Advanced thin film sensor techniques that can provide accurate surface strain and temperature measurements are being developed at NASA Lewis Research Center. These sensors are needed to provide minimally intrusive characterization of advanced materials (such as ceramics and composites) and structures (such as components for Space Shuttle Main Engine, High Speed Civil Transport, Advanced Subsonic Transports and General Aviation Aircraft) in hostile, high-temperature environments and for validation of design codes. This paper presents two advanced thin film sensor technologies: strain gauges and thermocouples. These sensors are sputter deposited directly onto the test articles and are only a few micrometers thick; the surface of the test article is not structurally altered and there is minimal disturbance of the gas flow over the surface. The strain gauges are palladium-13% chromium based and the thermocouples are platinum-13% rhodium vs. platinum. The fabrication techniques of these thin film sensors in a class 1000 cleanroom at the NASA Lewis Research Center are described. Their demonstration on a variety of engine materials, including superalloys, ceramics and advanced ceramic matrix composites, in several hostile, high-temperature test environments are discussed.

Lei, Jih-Fen↗
DOE OSTI2023

Heterogeneous Structural Evolution of In–Zn–O Thin Films during Annealing

Amorphous In-Zn-O (a-IZO) thin films are among the most promising transparent conducting materials. Applications of a-IZO include thin film transistors for display technology and photovoltaic devices. However, the use of this material in practical devices has been impeded by limitations in our understanding of the relationship between a-IZO film structure and electrical properties. Here, we use in situ X-ray reflectivity to provide experimental evidence for a vertically heterogeneous, thermally induced structural relaxation that had been predicted for amorphous oxide films but not previously observed. The structural relaxation is shown to be dependent on the thermal annealing environment. Complementary in situ current-voltage curves and ex situ Van der Pauw measurements further show that thermal annealing also influences the electrical performance of the films. Here our results suggest that both oxygen uptake and structural relaxation contribute to the reduction in free carriers within a-IZO films during postdeposition processing. The structural heterogeneity and loss of carriers that occur during thermal annealing are only partly reversible. We anticipate that this insight into the structure-processing-property relationships within a-IZO will help to enable a-IZO-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Effects of deposition and annealing conditions on the crystallisation of NiTi thin films by e-beam evaporation

This Letter demonstrates the effects of deposition and annealing conditions on the crystallisation of nickel–titanium (NiTi) thin films deposited by the e-beam evaporation. NiTi thin films of 0.5 μm thick are fabricated on P-type (110) silicon substrates using the e-beam evaporation technique. We find that with the characterisations using the X-ray diffraction method, the results indicate that low e-beam deposition rate and argon employed annealing procedures can be beneficial to the formation of NiTi crystalline structure. Additionally, the as-deposited NiTi thin films without annealing procedures are amorphous, when deposited on the substrates at low temperatures. The differential scanning calorimetry studies show NiTi thin films formed by the e-beam evaporation are Ni-rich. Furthermore, SEM images illustrate that high-precision patterned NiTi thin film microstructures can be fabricated by combining with the e-beam evaporation and lift-off resist methods, without any wet or dry etching procedures. The proposed fabrication process for NiTi thin film microstructures shows great potential for application in shape memory alloy medical devices, as well as the micro-robotics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Perspective on solid-phase epitaxy as a method for searching novel topological phases in pyrochlore iridate thin films

Pyrochlore iridates exhibit various novel topological phenomena due to their topology and electron correlation. Notably, pyrochlore iridate was the first proposed material system shown to host the time-reversal symmetry broken Weyl semimetal phase. After this profound theoretical proposal, extensive experimental attempts have been made to synthesize high-quality samples in both bulk and film forms. In particular, adjusting thin film geometry represents a practical way to tune the U/ t ( U: Coulomb interaction and t: for hopping parameter) and identify the various topological phases in the regime U ~ λ ( λ: spin–orbit interaction). However, the instability of pyrochlore iridates at high temperature and low oxygen pressure has long been a barrier to growing pyrochlore iridate thin films by conventional film growth methods. To overcome this, pyrochlore iridate films have often been grown by the solid-phase epitaxy method, which uses a metastable amorphous layer grown at low temperature. During a high temperature post-annealing process, the layer in contact with a single crystalline substrate will crystallize epitaxially in the solid state by rearranging atoms at the interface. Here, we present a perspective on the solid-phase epitaxy as a method to synthesize epitaxial pyrochlore iridate thin films and a way to search for novel correlated phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Revealing Micro-Scale Doping Variations in Thin-Films via Simultaneous Luminescence and Current Collection Measurements

Doping thin films used for photovoltaic absorbers is both critical to maximize device voltage and challenging due to complex interactions between point defects in these materials. Such interactions can result in compensation of the intended dopant species, meaning that the active charge-carrier concentration is lower than the concentration incorporated dopants. Charge-carrier compensation is directly related to the open-circuit voltage (VOC) deficit, or magnitude of VOC relative to the theoretical limit. Understanding how the carrier concentration varies within thin-films is necessary to design material processing schedules to minimize this VOC deficit and produce more efficient devices. Unfortunately, measurements of the free carrier concentration are generally relevant at the device level and cannot resolve local differences. Resolving local doping differences in thin-films such as Cd(Se,Te), CZTS, and CIGSe requires techniques with micron or sub-micron spatial resolution due to the polycrystalline structure as well as intended and unintended composition variations in these materials. In this contribution, we show how simultaneous measurement of cathodoluminescence (CL) and electron-beam-induced current (EBIC) can be used to expose doping variations in Cd(Se,Te) thin-films. Simultaneous collection of these signals reveals unexpected differences in the electric field strength through the device thickness due to spatial variation in the carrier concentration.

41 EE - Solar Energy Technologies Office (EE-4S)↗
NASA NTRS2007

Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

Woods, Lawrence M.↗
NASA NTRS2004

Thin-Film Ceramic Thermocouples Fabricated and Tested

The Sensors and Electronics Technology Branch of the NASA Glenn Research Center is developing thin-film-based sensors for surface measurement in propulsion system research. Thin-film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner than wire- or foil-based sensors. One type of sensor being advanced is the thin-film thermocouple, specifically for applications in high-temperature combustion environments. Ceramics are being demonstrated as having the potential to meet the demands of thin-film thermocouples in advanced aerospace environments. The maximum-use temperature of noble metal thin-film thermocouples, 1500 C (2700 F), may not be adequate for components used in the increasingly harsh conditions of advanced aircraft and next-generation launch vehicles. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically in the form of bulky rods or probes. As part of ASTP, Glenn's Sensors and Electronics Technology Branch is leading an in-house effort to apply ceramics as thin-film thermocouples for extremely high-temperature applications as part of ASTP. Since the purity of the ceramics is crucial for the stability of the thermocouples, Glenn's Ceramics Branch and Case Western Reserve University are developing high-purity ceramic sputtering targets for fabricating high-temperature sensors. Glenn's Microsystems Fabrication Laboratory, supported by the Akima Corporation, is using these targets to fabricate thermocouple samples for testing. The first of the materials used were chromium silicide (CrSi) and tantalum carbide (TaC). These refractory materials are expected to survive temperatures in excess of 1500 C. Preliminary results indicate that the thermoelectric voltage output of a thin-film CrSi versus TaC thermocouple is 15 times that of the standard type R (platinum-rhodium versus platinum) thermocouple, producing 20 mV with a 200 C temperature gradient. The photograph on the left shows the CrSi-TaC thermocouple in a test fixture at Glenn, and the resulting output signal is shown on the right. The temperature differential across the sample, from the center of the sample inside the oven to the sample mount outside the oven, is measured using a type R thermocouple on the sample.

Wrbanek, John D.↗
DOE OSTI2022

Experimental and theoretical study of hole scattering in RF sputtered p-type Cu 2 O thin films

One of the key materials of interest for p-type oxide semiconductor thin film electronics is cuprous oxide (Cu 2 O), due to its relatively high hole mobility. Here, in this work, we use experiments, analytical models, and density functional theory calculations to study the scattering mechanisms that determine Hall mobility in two Cu 2 O samples. First, we examine a polycrystalline Cu 2 O thin film deposited by RF magnetron sputtering, and second, a single-crystalline Cu2O bulk substrate. Temperature-dependent Hall measurements indicate that neutral impurity and grain boundary scattering are dominant for the polycrystalline Cu 2 O thin film, while phonon scattering is dominant for single-crystalline Cu 2 O. Our first-principles calculations show that the room-temperature intrinsic hole mobility of Cu 2 O is 106 cm 2 V –1 s –1 , indicating the great promise of the material for p-type electronic devices. This intrinsic mobility is limited by phonon scattering, with the most dominant scattering modes having phonon energies of 88.4 and 17.1 meV. These results indicate that the key pathways to increase the hole mobility in Cu 2 O thin films are by reducing the impurity concentration and by increasing grain size. Our work thus sets the stage for the future development of high performance Cu 2 O-based p-type thin film transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Machine learning for neutron reflectometry data analysis of two-layer thin films

Neutron reflectometry (NR) is a powerful tool for probing thin films at length scales down to nanometers. We investigated the use of a neural network to predict a two-layer thin film structure to model a given measured reflectivity curve. Application of this neural network to predict a thin film structure revealed that it was accurate and could provide an excellent starting point for traditional fitting methods. Employing prediction-guided fitting has considerable potential for more rapidly producing a result compared to the labor-intensive but commonly-used approach of trial and error searches prior to refinement. A deeper look at the stability of the predictive power of the neural network against statistical fluctuations of measured reflectivity profiles showed that the predictions are stable. We conclude that the approach presented here can provide valuable assistance to users of NR and should be further extended for use in studies of more complex n-layer thin film systems. This result also opens up the possibility of developing adaptive measurement systems in the future.

36 MATERIALS SCIENCE↗