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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Materials Data on Sn(SO2)2 by Materials Project

Sn(SO2)2 crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of two Sn(SO2)2 clusters. Sn4+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of Sn–O bond distances ranging from 2.28–2.33 Å. There are two inequivalent S2+ sites. In the first S2+ site, S2+ is bonded in a water-like geometry to two O2- atoms. Both S–O bond lengths are 1.53 Å. In the second S2+ site, S2+ is bonded in a water-like geometry to two O2- atoms. Both S–O bond lengths are 1.53 Å. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded in a 2-coordinate geometry to one Sn4+ and one S2+ atom. In the second O2- site, O2- is bonded in a 1-coordinate geometry to one Sn4+ and one S2+ atom. In the third O2- site, O2- is bonded in a distorted bent 120 degrees geometry to one Sn4+ and one S2+ atom. In the fourth O2- site, O2- is bonded in a 2-coordinate geometry to one Sn4+ and one S2+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sn(PO3)3 by Materials Project

Sn(PO3)3 crystallizes in the triclinic P-1 space group. The structure is three-dimensional. there are two inequivalent Sn3+ sites. In the first Sn3+ site, Sn3+ is bonded to six O2- atoms to form SnO6 octahedra that share corners with six PO4 tetrahedra. There are a spread of Sn–O bond distances ranging from 2.02–2.09 Å. In the second Sn3+ site, Sn3+ is bonded in a rectangular see-saw-like geometry to four O2- atoms. There are a spread of Sn–O bond distances ranging from 2.14–2.51 Å. There are six inequivalent P5+ sites. In the first P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share corners with two equivalent SnO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedra tilt angles range from 36–45°. There are a spread of P–O bond distances ranging from 1.52–1.59 Å. In the second P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share corners with two equivalent SnO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedra tilt angles range from 10–50°. There are a spread of P–O bond distances ranging from 1.51–1.61 Å. In the third P5+ site, P5+ is bonded to four O2- atoms to form corner-sharing PO4 tetrahedra. There are a spread of P–O bond distances ranging from 1.46–1.67 Å. In the fourth P5+ site, P5+ is bonded to four O2- atoms to form corner-sharing PO4 tetrahedra. There are a spread of P–O bond distances ranging from 1.46–1.68 Å. In the fifth P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share a cornercorner with one SnO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedral tilt angles are 41°. There are a spread of P–O bond distances ranging from 1.48–1.65 Å. In the sixth P5+ site, P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share a cornercorner with one SnO6 octahedra and corners with two PO4 tetrahedra. The corner-sharing octahedral tilt angles are 44°. There are a spread of P–O bond distances ranging from 1.50–1.61 Å. There are eighteen inequivalent O2- sites. In the first O2- site, O2- is bonded in a bent 120 degrees geometry to two P5+ atoms. In the second O2- site, O2- is bonded in a single-bond geometry to one P5+ atom. In the third O2- site, O2- is bonded in a distorted single-bond geometry to one Sn3+ and one P5+ atom. In the fourth O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one Sn3+ and one P5+ atom. In the fifth O2- site, O2- is bonded in a single-bond geometry to one P5+ atom. In the sixth O2- site, O2- is bonded in a bent 150 degrees geometry to one Sn3+ and one P5+ atom. In the seventh O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one Sn3+ and one P5+ atom. In the eighth O2- site, O2- is bonded in a distorted bent 120 degrees geometry to two P5+ atoms. In the ninth O2- site, O2- is bonded in a 2-coordinate geometry to one Sn3+ and one P5+ atom. In the tenth O2- site, O2- is bonded in a bent 150 degrees geometry to two P5+ atoms. In the eleventh O2- site, O2- is bonded in a 1-coordinate geometry to one Sn3+ and one P5+ atom. In the twelfth O2- site, O2- is bonded in a distorted linear geometry to one Sn3+ and one P5+ atom. In the thirteenth O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one Sn3+ and one P5+ atom. In the fourteenth O2- site, O2- is bonded in a bent 150 degrees geometry to two P5+ atoms. In the fifteenth O2- site, O2- is bonded in a distorted bent 120 degrees geometry to one Sn3+ and one P5+ atom. In the sixteenth O2- site, O2- is bonded in a distorted bent 150 degrees geometry to two P5+ atoms. In the seventeenth O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one Sn3+ and one P5+ atom. In the eighteenth O2- site, O2- is bonded in a bent 150 degrees geometry to two P5+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sn(PO3)3 by Materials Project

Sn(PO3)3 crystallizes in the trigonal P312 space group. The structure is three-dimensional. there are two inequivalent Sn3+ sites. In the first Sn3+ site, Sn3+ is bonded to six equivalent O2- atoms to form SnO6 octahedra that share corners with six equivalent PO4 tetrahedra. All Sn–O bond lengths are 2.45 Å. In the second Sn3+ site, Sn3+ is bonded to six equivalent O2- atoms to form SnO6 octahedra that share corners with six equivalent PO4 tetrahedra. All Sn–O bond lengths are 2.07 Å. P5+ is bonded to four O2- atoms to form PO4 tetrahedra that share corners with two SnO6 octahedra and corners with two equivalent PO4 tetrahedra. The corner-sharing octahedra tilt angles range from 37–41°. There are a spread of P–O bond distances ranging from 1.48–1.61 Å. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a distorted bent 120 degrees geometry to two equivalent P5+ atoms. In the second O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one Sn3+ and one P5+ atom. In the third O2- site, O2- is bonded in a distorted bent 150 degrees geometry to one Sn3+ and one P5+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sn(CO)4 by Materials Project

Sn(CO)4 crystallizes in the orthorhombic Iba2 space group. The structure is one-dimensional and consists of eight Sn(CO)4 ribbons oriented in the (1, 0, 0) direction. Sn2+ is bonded in a distorted rectangular see-saw-like geometry to four O2- atoms. There are a spread of Sn–O bond distances ranging from 2.17–2.53 Å. There are four inequivalent C+1.50+ sites. In the first C+1.50+ site, C+1.50+ is bonded in a bent 120 degrees geometry to two O2- atoms. There is one shorter (1.26 Å) and one longer (1.34 Å) C–O bond length. In the second C+1.50+ site, C+1.50+ is bonded in a bent 120 degrees geometry to two O2- atoms. There is one shorter (1.26 Å) and one longer (1.34 Å) C–O bond length. In the third C+1.50+ site, C+1.50+ is bonded in a single-bond geometry to one O2- atom. The C–O bond length is 1.84 Å. In the fourth C+1.50+ site, C+1.50+ is bonded in a single-bond geometry to one O2- atom. The C–O bond length is 1.91 Å. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded in a bent 120 degrees geometry to one Sn2+ and one C+1.50+ atom. In the second O2- site, O2- is bonded in a distorted single-bond geometry to one Sn2+ and two C+1.50+ atoms. In the third O2- site, O2- is bonded in a distorted single-bond geometry to one Sn2+ and two C+1.50+ atoms. In the fourth O2- site, O2- is bonded in a bent 120 degrees geometry to one Sn2+ and one C+1.50+ atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Sn(NF)2 by Materials Project

Sn(NF)2 crystallizes in the monoclinic C2/m space group. The structure is two-dimensional and consists of two Sn(NF)2 sheets oriented in the (0, 1, 0) direction. Sn4+ is bonded to four equivalent F1- atoms to form distorted edge-sharing SnF4 hexagonal bipyramids. All Sn–F bond lengths are 2.35 Å. N1- is bonded in a 2-coordinate geometry to one N1- and one F1- atom. The N–N bond length is 1.12 Å. The N–F bond length is 2.55 Å. F1- is bonded in a 3-coordinate geometry to two equivalent Sn4+ and one N1- atom.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of Halogen Groups on the Properties of PEA–Based 2D Pb–Sn Halide Perovskites

Tuning broad emission in 2D Pb–Sn halide perovskites (HPs) is essential for advancing optoelectronic applications, particularly for color-tunable and white-light-emitting devices. This broad emission is linked to structural factors, such as defects and phase segregation of the Pb component within the Pb–Sn system, which are strongly influenced by the molecular structure and chemical properties of spacer cations. Atomic tuning of the spacers via halogenation opens up a new way to fine-tune the molecular properties, enabling further augmentations of HP functionalities. Nevertheless, the distinct broad emission's sensitivity to spacer chemistry remains underexplored. Here, halogenation's influence is systematically investigated on 2D HP emission characteristics using a high-throughput workflow. These findings reveal that the F-containing phenethylammonium (4F-PEA) spacer narrows the broadband PL, whereas Cl broadens it. Through a correlative study, it is found that 4F-PEA reduces not only the local phase segregation but also the defect levels and microstrains in 2D HPs. This is likely attributed to the manifestation of less lattice distortion via stronger surface coordination of the dipole-augmented 4F-PEA. Furthermore, these results highlight halogenation as a key factor in modulating phase segregation and defect density in 2D Pb–Sn HPs, offering a promising pathway to tune the emission for enhanced optoelectronic performance.

2D Pb-Sn halide perovskites↗
DOE OSTI2023

Buried interface modulation via $\mathrm{PEDOT:PSS}$ ionic exchange for the Sn-Pb mixed perovskite based solar cells

To apply Sn-Pb mixed perovskite solar cells for highly efficient single- or multi-junction devices, understanding device-specific buried interfaces is necessary. Poly [3,4-ethylenedioxythiophene]:poly[styrene sulfonate] (PEDOT:PSS) is primarily used as a hole transport layer in Sn-Pb mixed perovskite solar cells. However, the spatial heterogeneity of PEDOT:PSS, caused by its PEDOT-rich and PSS-rich domains, induces many defects at the buried interface in PEDOT:PSS/perovskite, which limits device performance. Here, we present ionic exchange (IE) of PEDOT:PSS via a combination of methylamine iodide (MAI) and dimethyl sulfoxide (DMSO). Through surface analyses and density functional theory (DFT) simulations, we confirm that the IE process preferentially form PEDOT-I and MA-PSS and that PSS-rich domains bind to DMSO. Thus, the spatial separation of PEDOT:PSS is solved, and the exchanged MA + and I - ions serve as a bridge between PEDOT:PSS and the perovskite, leading to improved physical, chemical, and electrical properties of the buried interface. The Sn-Pb mixed perovskite solar cells using IE-PEDOT:PSS achieve an improved efficiency of 21.3% with an open-circuit voltage of 0.85 V and show better long-term stability. Additionally, IE-PEDOT:PSS works effectively in 2-terminal all-perovskite tandem devices, resulting in an improved efficiency of 23.5% and high reproducibility.

14 SOLAR ENERGY↗
DOE OSTI2020

Sn 0.24 WO 3 hexagonal tungsten bronze prepared via the metal chloride route

In this work, we report the synthesis of Sn 0.24 WO 3 single crystals via an alternative, less well-known, solid-state synthetic approach that involves the use of tin chloride as a starting material. The compound adopts an unusual variant of the hexagonal tungsten bronze structure in space group P6/mmm (a = 7.4264(7) Å and c = 3.7843(4) Å) with a previously unreported distribution of Sn cations, disordered over two distinct sites in the tunnels. Sn 0.24 WO 3 shows no signs of superconductivity down to 170 mK and exhibits weakly-metallic conducting behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

In situ microscopy and spectroscopy characterization of microsized Sn anode for sodium-ion batteries

Microsized Sn is a promising anode material for sodium-ion batteries in terms of cost, specific capacity, and volumetric energy density, which however suffers from huge volume changes and rapid cell degradation upon cycling. Despite recent advances via nanostructured electrode design and interface engineering, the correlation between mechanical stability, solid-electrolyte interphase (SEI) and reaction kinetics/reversibility remains controversial and elusive. Here, in this work, by combining in situ scanning electron microcopy and X-ray absorption spectroscopy as well as X-ray photoelectron spectroscopy, we have investigated the underlying electro-chemo-mechanical behavior and their coupling effects during charge/discharge of microsized Sn anode. Our results revealed that microsized Sn is pulverized into nanoparticles with simultaneous formation of numerous voids and pores upon the 1st charge/discharge, while the electrolytes composition plays a critical role on the consequent parasitic reactions and eventually the sodiation/de-sodiation reversibility. In contrast to carbonate-based electrolytes, ether-based electrolytes enabled formation of inorganic species dominated SEI with improved mechanical strength, thus leading to higher specific capacity and improved cycling stability. The present findings are crucial for future development of microsized anode materials for rechargeable batteries with high volumetric energy density.

25 ENERGY STORAGE↗
DOE OSTI2020

First-principles study of the topological surface states of α-Sn(111)

α-Sn is on the boundary of a couple of distinct topological phases. It will transform into a topological insulator under a suitable strain. However, a clear picture of its topological surface states (TSSs) is still lacking. Furthermore we perform first-principles calculations on the electronic structure of α-Sn(111) surface to identify its TSSs and reveal their properties. The results show that the presence of valence band reorganizes the TSSs in the inverted sp gap into two Dirac cones. The lower one is in the valence band continuum; the upper one resides in the gap between the valence and conduction bands. We also demonstrate the transformation of the surface states by switching on or off of strain and/or spin-orbit coupling. Without spin-orbit coupling, only the TSSs associated with the lower Dirac cone survive, and they are spin unpolarized. The results are useful for understanding and engineering the topological properties of α-Sn.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Hole-Transport Layer for High Current Density and Stability of Sn-Pb Perovskites and All-Perovskite Tandem Solar Cells

Sn-Pb perovskites are essential for achieving efficient single-junction solar cells and all-perovskite tandem solar cells (APTSCs). Although Sn oxidation and defective surfaces were once major limitations, recent advances in intrinsic material quality have largely mitigated these issues. As a result, the HTL-related interface is now regarded as the primary bottleneck for device performance. To address the intrinsic drawbacks of PEDOT:PSS, chemical surface modification and additive strategies have been widely applied, and alternative HTLs, like polymeric, inorganic, or small-molecule HTLs, have also gained attention. These approaches offer improved energy-level alignment, high transparency, and enhanced chemical durability, leading to higher short-circuit current density and longer operational lifetime in both single-junction and tandem devices. In this Perspective, we highlight the key criteria and practical effects of HTL materials suitable for Sn-Pb perovskites.

14 SOLAR ENERGY↗
DOE OSTI2026

Interplay of Quantum Size Effect and Tensile Strain on Surface Morphology of β-Sn(100) Islands

The quantum size effect (QSE) and strain effect are two key factors influencing the surface morphology of thin films, which can increase film surface roughness through QSE-induced thickness oscillation and strain-induced island formation, respectively. Surface roughness usually manifests in the early stages of film growth and diminishes beyond a critical thickness. In this work, we employ molecular beam epitaxy (MBE) to grow β-Sn(100) islands with varying thickness N on bilayer graphene-terminated 6H-SiC(0001) substrates. Scanning tunneling microscopy and spectroscopy measurements reveal an inverse surface roughness effect that highlights the interplay of QSE and misfit strain in shaping the surface morphology of β-Sn(100) islands. For N ≤ 10, the islands exhibit flat surfaces, while for N ≥ 26, the island surfaces become corrugated and patterned. For the intermediate range, i.e., 12 ≤ N ≤ 24, both flat and patterned surfaces coexist, with the percentage coverage of the patterned surface oscillating as a function of N. By performing density functional theory calculations, we demonstrate that the unusual surface pattern evolution in our MBE-grown β-Sn(100) islands is a result of the interplay between QSE-induced surface roughing and tensile strain-induced smoothening effect.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Heat Treatment Studies of Nb3Sn Wires for Superconducting Planar Undulators

A project aiming to fabricate a full-length 2.8-m long Nb 3Sn superconducting undulator for the storage ring was started last year at the ANL APS. These Nb 3 Sn undulators operate at a maximum magnetic field on the conductor of about 5 T. To address instabilities at this field, two Nb 3 Sn wires with small subelement size were used. Specifically, Restacked Rod Processed wires of 0.6mmin diameter and with 144 and 150 superconducting subelements respectively, over 169 total. The equivalent subelement diameter, DS, of thesewires is35 mu m. At these smallDS values, the critical current density is known to deteriorate, and the Residual Resistivity Ratio is very sensitive to heat treatment. A delicate balance has therefore to be found to obtain parameters within operation specifications. In this paper we showperformance results from different heat treatments.

critical current density↗
DOE OSTI2021

Unnamed Pt(Cu 0.67 Sn 0.33 ) from the Bolshoy Khailyk River, Western Sayans, Russia, and a Review of Related Compounds and Solid Solutions

We describe a potentially new species of a platinum cupride–stannide mineral (PCSM) of composition Pt(Cu 0.67 Sn 0.33 ). It occurs in a placer deposit in the River Bolshoy Khailyk, southern Krasnoyarskiy kray, Russia. A synthetic equivalent of PCSM was obtained and characterized. The PCSM occurs as anhedral or subhedral grains up to 15 μm × 30 μm in association with various platinum-group minerals, Rh–Co-rich pentlandite and magnetite, all hosted by a placer grain of Cu–Au–Pt alloy. Synchrotron micro-Laue diffraction studies indicate that the PCSM mineral is tetragonal and belongs to the inferred space-group P4/mmm (#123). Its unit-cell parameters are a = 2.838 (3) Å, c = 3.650 (4) Å, and V = 29.40 (10) Å 3 , and Z = 1. The c:a ratio calculated from the unit-cell parameters is 1.286. These characteristics are in good agreement with those obtained for specimens of synthetic Pt(Cu 0.67 Sn 0.33 ). A review on related minerals and unnamed phases is provided to outline compositional variations and extents of solid solutions in the relevant systems PtNi–PtFe–PtCu, PdCu–PdHg–PdAu, PdHg–PtHg, and AuCu–PtCu. The PCSM-bearing mineralization appears to be related genetically with an ophiolitic source-rock of the Aktovrakskiy complex of the western Sayans. The unnamed phase likely crystallized from microvolumes of a highly fractionated melt rich in Cu and Sn.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Acceleration of Crystallization Kinetics in Ge‐Sb‐Te‐Based Phase‐Change Materials by Substitution of Ge by Sn

Abstract Thin films of (Ge 1– x Sn x ) 8 Sb 2 Te 11 are prepared to study the impact of Sn‐substitution on properties relevant for application in phase‐change memory, a next‐generation electronic data storage technology. It is expected that substitution decreases the crystallization temperature, but it is not known how the maximum crystallization rate is affected. Ge 8 Sb 2 Te 11 is chosen from the (GeTe) y (Sb 2 Te 3 ) 1– y system of phase‐change materials as a starting point due to its higher crystallization temperature as compared to the common material Ge 2 Sb 2 Te 5 . In situ X‐ray diffraction at 5 K min −1 heating rate is performed to determine the crystallization temperature and the resulting structure. To measure the maximum crystallization rate, femtosecond optical pulses that heat the material repetitively and monitor the resulting increase of optical reflectance are used. Glasses over the entire composition range are prepared using a melt‐quenching process. While at x = 0, 97, subsequent pulses are required for crystallization, one single pulse is enough to achieve the same effect at x = 0.5. The samples are further characterized by optical ellipsometry and calorimetry. The combined electrical and optical contrast and the ability to cycle between states with single femtosecond pulses renders Ge 4 Sn 4 Sb 2 Te 11 promising for photonics applications.

Zalden, Peter↗
DOE OSTI2023

Dynamic Stabilization of Metastable States in Triple-Well Ferroelectric Sn 2 P 2 S 6

Polarization dynamics in ferroelectric materials is governed by the effective potential energy landscape of the order parameter. The unique aspect of ferroelectrics compared to many other transitions is the possibility of more than two potential wells, leading to complicated energy landscapes with new fundamental and functional properties. In this work, direct dynamic evidence is revealed of a triple-well potential in the metal thiophosphate Sn 2 P 2 S 6 compound using multivariate scanning probe microscopy combined with theoretical simulations. The key finding is that the metastable zero polarization state can be accessed through a gradual switching process and is stabilized over a broad range of electric fields. Simulations confirm that the observed zero polarization state originates from a kinetic stabilization of the nonpolar state of the triple-well, as opposed to domain walls. Dynamically, the triple-well of Sn 2 P 2 S 6 becomes equivalent to antiferroelectric hysteresis loops. Therefore, this material combines the robust and well-defined domain structure of a proper ferroelectric with dynamic hysteresis loops present in antiferroelectrics. Moreover, the triple-well enhances mem-capacitive effects in Sn 2 P 2 S 6 , which are forbidden for ideal double-well ferroelectrics. These findings provide a path to tunable electronic elements for beyond binary high-density computing devices and neuromorphic circuits based on dynamic properties of the triple-well.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Bulk‐Boundary Correspondence of Semimetal Ru 3 Sn 7 and Topological Surface States on Chemically Realistic Terminations

Ru 3 Sn 7 is experimentally demonstrated as an efficient catalyst, with potential utilization of topological surface states for hydrogen evolution reaction. Despite its promising catalytic performance, the topological nature of Ru 3 Sn 7 remains uncertain. Particularly, the bulk-boundary correspondence has not yet been established, hence hindering a rigorous justification of its topologically-protected surface states. In this work, the bulk topology of Ru 3 Sn 7 is detailed using first-principles calculations and the topological quantum chemistry formalism. Ru3Sn7 turns out to be an enforced semimetal possessing symmetry-protected crossings within a set of bands near the Fermi level, which are enforced and prescribed by the violations of symmetry-prescribed compatibility relations. Moreover, the surface states and the associated origin from the same set of entangled bands are identified, thereby establishing the bulk-boundary correspondence. To evaluate the effects of chemical modifications, the response of topological surface states to various surface terminations, stoichiometry, and oxidation is examined. The surface structures are globally optimized, and the phase diagrams for various experimental conditions are built. It is shown that, due to changes in the local chemical environment, the original surface states are significantly altered. Modified surface bands can be observed near the Fermi level on surface terminations that preserve the C 4v symmetry.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Sm 2 Ru 3 Sn 5 : A Noncentrosymmetric Cubic Member of the Ln 2 M 3 X 5 Family

An optimized synthetic method is presented for Sm 2 Ru 3 Sn 5 and investigate its physical properties and electronic structure. Sm 2 Ru 3 Sn 5 is prepared by arc-melting stoichiometric ratios of the elements and is confirmed by single crystal and powder X-ray diffraction. An antiferromagnetic transition is observed at T N = 3.8 K. A modified Curie-Weiss fit to the data in the range 50–150 K yields a Curie-Weiss temperature: θ CW = −36.6 K and an effective magnetic moment: μ eff = 0.83 μ B , in agreement with a Sm 3+ oxidation state. Field-dependent magnetization up to H = 7 T at 2 K shows a maximum response of 0.06 μ B , which is significantly lower than the expected Sm 3+ saturation moment (0.71 μ B ). Resistivity measurements indicate metallic behavior, and analysis of the magnetic entropy from the heat capacity reveals a doublet ground state due to crystal electric field splitting. The electronic structure and density of states are calculated with density function theory and further supported by the local density approximation with dynamical mean-field theory. Finally, the experimental and computational results highlight localized Sm 3+ moments and suggest a possible interplay between Ruddelman–Kitel–Kasuya–Yosida and Kondo interactions, positioning Sm 2 Ru 3 Sn 5 as a promising material for studying topology and complex physical phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗