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Irradiation Damage of Single Crystal, Coarse-grained and Nano-grained Copper under Helium Bombardment at 450°C
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Unified constitutive model for single crystal deformation behavior with applications
Single crystal materials are being used in gas turbine airfoils and are candidates for other hot section components because of their increased temperature capabilities and resistance to thermal fatigue. Development of a constitutive model which assesses the inelastic behavior of these materials has been studied in 2 NASA programs: Life Prediction and Constitutive Models for Engine Hot Section Anisotropic Materials and Biaxial Constitutive Equation Development for Single Crystals. The model has been fit to a large body of constitutive data for single crystal PWA 1480 material. The model uses a unified approach for computing total inelastic strains (creep plus plasticity) on crystallographic slip systems reproducing observed directional and strain rate effects as a natural consequence of the summed slip system quantities. The model includes several of the effects that have been reported to influence deformation in single crystal materials, such as shear stress, latent hardening, and cross slip. The model is operational in a commercial Finite Element code and is being installed in a Boundary Element Method code.
Single-crystal elasticity of (Al,Fe)-bearing bridgmanite and seismic shear wave radial anisotropy at the topmost lower mantle
Not Available
Inch-Size 0D-Structured Lead-Free Perovskite Single Crystals for Highly Sensitive Stable X-Ray Imaging
Not provided.
Doping effect on the physical properties of Ca 10 Pt 3 As 8 (Fe 2 As 2 ) 5 single crystals
Ca 10 Pt 3 As 8 (Fe 2 As 2 ) 5 is a unique parent compound for superconductivity, which consists of both semiconducting Pt 3 As 8 and metallic FeAs layers. We report the observation of superconductivity induced via chemical doping in either Ca site using rare-earth (RE) elements (RE = La, Gd) or Fe site using Pt. The interlayer distance and the normal-state physical properties of the doped system change correspondingly. The coupled changes include (1) superconducting transition temperature T c increases with increasing both doping concentration and interlayer distance, (2) our T c value is higher than previously reported maximum value for Pt doping in the Fe site, (3) both the normal-state in-plane resistivity and out-of-plane resistivity change from non-metallic to metallic behavior with increasing doping concentration and T c , and (4) the transverse in-plane magnetoresistance (MR ab ) changes from linear-field dependence to quadratic behavior upon increasing T c . For La-doped compound with the highest T c (~35 K), upper critical fields ($H_{c2}^{ab} , H_{c2}^c$), coherence lengths (ξ ab , ξ c ), and in-plane penetration depth (λ ab ) are estimated. Finally, we discuss the relationship between chemical doping, interlayer distance, and physical properties in this system.
One-dimensional SnF{sub 2} single crystals in the inner channels of single-wall carbon nanotubes: I. Preparation and basic characterization
One-dimensional (1D) SnF{sub 2} single crystals have been obtained by crystallization from melt in the inner channels of single-wall carbon nanotubes (SWCNTs). SWCNTs with an inner diameter of 1.02-1.4 nm, synthesized by electric-arc discharge and chemically purified, were used for incorporation. The synthesized 1D SnF{sub 2} single crystal-SWCNT composites are basically characterized by X-ray diffraction, energy-dispersive analysis, electron microscopy, and chemical analysis. The characteristic motifs of tin cation distribution in the SWCNT inner channel confirm the formation of SnF{sub 2} single crystals.
Anisotropic upper critical field of pristine and proton-irradiated single crystals of the magnetically ordered superconductor RbEuFe{sub 4}As{sub 4
We present a study of the upper critical field H-c2 of pristine and proton-irradiated RbEuFe4As4 crystals in pulsed magnetic fields of up to 65 T. The data for H-c2 reveal pronounced downwards curvature, particularly for the in-plane field orientation, and a superconducting anisotropy that decreases with decreasing temperature. These features are indicative of Pauli paramagnetic limiting. For the interpretation of these data, we use a model of a clean single-band superconductor with an open Fermi surface in the shape of a warped cylinder, which takes into account Zeeman spin splitting. Fits to the data reveal that the in-plane upper critical field is Pauli paramagnetic limited, while the out-of-plane upper critical field is orbitally limited and that the orbital and paramagnetic fields have opposite anisotropies. A consequence of this particular combination is the unusual inversion of the anisotropy H-c2(ab) < H-c2(c) of the irradiated sample at temperatures below 10 K. The fits also yield an in-plane Maki parameter alpha(110)(M) approximate to 2.6 exceeding the critical value for the formation of the Fulde-Ferrell-Larkin-Ovchinnikov state. Nevertheless, the current measurements did not reveal direct evidence for the occurrence of this state.
Electronic properties of graphene-single crystal diamond heterostructures
Single crystal diamond has been used as a substrate to support single layer graphene grown by chemical vapor deposition methods. It is possible to chemically functionalise the diamond surface, and in the present case H-, F-, O-, and N-group have been purposefully added prior to graphene deposition. The electronic properties of the resultant heterostructures vary strongly; a p-type layer with good mobility and a band gap of ∼0.7 eV is created when H-terminated diamond layers are used, whilst a layer with more metallic-like character (high carrier density and low carrier mobility) arises when N(O)-terminations are introduced. Since it is relatively easy to pattern these functional groups on the diamond surface, this suggests that this approach may offer an exciting route to 2D device structures on single layer graphene sheets.
Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals
Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.
High-pressure effects on single crystals of electron-doped Pr[subscript 2;#8722;x]Ce[subscript x]CuO[subscript 4]
Abstract not provided
Tl{sub 10}Hg{sub 3}Cl{sub 16}: Single crystal growth, electronic structure and piezoelectric properties
Single crystal of the ternary halide Tl{sub 10}Hg{sub 3}Cl{sub 16} was grown using Bridgman-Stockbarger method. For the Tl{sub 10}Hg{sub 3}Cl{sub 16} crystal, we have measured X-ray photoelectron spectra for both pristine and Ar{sup +} ion-bombarded surfaces and additionally investigated photoinduced piezoelectricity. Our data indicate that the Tl{sub 10}Hg{sub 3}Cl{sub 16} single crystal surface is very sensitive with respect to Ar{sup +} ion-bombardment. In particular, Ar{sup +} ion-bombardment with energy of 3.0 keV over 5 min at an ion current density of 14 μA/cm{sup 2} causes significant changes of the elemental stoichiometry of the Tl{sub 10}Hg{sub 3}Cl{sub 16} surface resulting in an abrupt decrease of the mercury content in the top surface layers of the studied single crystal. As a result of the treatment, the mercury content becomes nil in the top surface layers. In addition, the present XPS measurements allow for concluding about very low hygroscopicity of the Tl{sub 10}Hg{sub 3}Cl{sub 16} single crystal surface. The property is extremely important for the crystal handling in optoelectronic or nano-electronic devices working at ambient conditions. The photoinduced piezoelectricity has been explored for Tl{sub 10}Hg{sub 3}Cl{sub 16} depending on nitrogen (λ=371 nm) laser power density and temperature. - Graphical abstract: As-grown single crystal boule of Tl{sub 10}Hg{sub 3}Cl{sub 16}; dependence of the effective piezoelecric coefficient d{sub 33} versus the photoinducing nitrogen laser power density, I, at different temperatures, T; and packing of the polyhedra of halide atoms around Hg atoms in the Tl{sub 10}Hg{sub 3}Cl{sub 16} structure. - Highlights: • High-quality Tl{sub 10}Hg{sub 3}Cl{sub 16} single crystal has been grown by Bridgman-Stockbarger method. • Electronic structure of Tl{sub 10}Hg{sub 3}Cl{sub 16} is studied by the XPS method. • Tl{sub 10}Hg{sub 3}Cl{sub 16} single crystal surface is sensitive with respect to Ar{sup +} ion-bombardment. • Very low hygroscopicity is characteristic of the Tl{sub 10}Hg{sub 3}Cl{sub 16} surface. • Photoinduced piezoelectricity is studied for the Tl{sub 10}Hg{sub 3}Cl{sub 16} compound.
Creep Properties of NiAl-1Hf Single Crystals Re-Investigated
NiAl-1Hf single crystals have been shown to be quite strong at 1027 C, with strength levels approaching those of advanced Ni-based superalloys. Initial testing, however, indicated that the properties might not be reproducible. Study of the 1027 C creep behavior of four different NiAl-1Hf single-crystal ingots subjected to several different heat treatments indicated that strength lies in a narrow band. Thus, we concluded that the mechanical properties are reproducible. Recent investigations of the intermetallic NiAl have confirmed that minor alloying additions combined with single-crystal growth technology can produce elevated temperature strength levels approaching those of Ni-based superalloys. For example, General Electric alloy AFN 12 {Ni-48.5(at.%) Al-0.5Hf-1Ti-0.05Ga} has a creep rupture strength equivalent to Rene 80 combined with a approximately 30-percent lower density, a fourfold improvement in thermal conductivity, and the ability to form a self-protective alumina scale in aggressive environments. Although the compositions of strong NiAl single crystals are relatively simple, the microstructures are complex and vary with the heat treatment and with small ingot-toingot variations in the alloy chemistry. In addition, initial testing suggested a strong dependence between microstructure and creep strength. If these observations were true, the ability to utilize NiAl single-crystal rotating components in turbine machinery could be severely limited. To investigate the possible limitations in the creep response of high-strength NiAl single crystals, the NASA Glenn Research Center at Lewis Field initiated an in depth investigation of the effect of heat treatment on the microstructure and subsequent 1027 C creep behavior of [001]-oriented NiAl-1Hf with a nominal chemistry of Ni-47.5Al-1Hf-0.5Si. This alloy was selected since four ingots, grown over a number of years and possessing slightly different compositions, were available for study. Specimens taken from the ingots were subjected to several heat treatment schedules, examined by transmission electron microscopy, and tested in both compression and tension. An example of the microstructure found in a [001]-oriented NiAl-1Hf specimen after a solution treatment at 1317 C for 50 hr followed by air cooling is illustrated in the image on the left, where the NiAl matrix contains a uniform distribution of nanometer-scale Gphase (Ni16Hf6Si7) precipitates. Other heat treating schedules produced microstructures with nanometer-sized G-phase cubes and plates or, in an extreme case, produced a microstructure with all the G-phase converted to Heusler (Ni2AlHf) particles. The results of 1027 C creep strength and strain rate testing are illustrated which summarizes data from tensile and compressive testing of samples cut from all four NiAl-1Hf ingots and subjected to a variety of heat treatment schedules. With one exception, all the strength values lie in a narrow band that spans six orders of magnitude in strain rate. The only factor that produced results outside of this band was the heat treatment schedule that dissolved all the G-phase and replaced it with Heusler precipitates. The results portrayed in this figure lead to the important practical conclusion that the elevated-temperature creep properties of NiAl-1Hf single crystals are reproducible and are not affected by small variations in alloy chemistry from ingot to ingot or by different initial distributions of G-phase in the heat-treated alloy. The only variable in this study that produced a significant and delerious effect on mechanical strength was a post-solution heat treatment that lead to the complete disappearance of the G-phase in favor of Heusler precipitates.
Revisiting the properties of delafossite CuCrO{sub 2}: A single crystal study
Platelet-like single-crystals of delafossite CuCrO{sub 2} have been successfully grown and characterised by X-ray diffraction and pole figures, scanning electron and atomic force microscopy. Transport measurements reveal that the resistivity is highly anisotropic, with a ratio of about 35 at 300 K between the in- and out-of-plane directions, reflecting the layered crystal structure. The magnetization and specific heat data show that CuCrO{sub 2} undergoes a unique antiferromagnetic transition at T{sub N}=24.0 K, in contrast to a recent report on CuCrO{sub 2} single-crystals showing the existence of two magnetic transitions, T{sub N1}=24.2 K and T{sub N2}=23.6 K, depending on the orientation of the applied magnetic field along and perpendicular to c, respectively. - Graphical abstract: 3R-CuCrO{sub 2} platelet-like single crystals have been successfully grown by the flux method. As revealed by {chi}(T) and C(T) measurements, their properties are characterised by a unique antiferromagnetic transition at T{sub N}=24 K. Interestingly, despite a very small magnetic anisotropy, a large one is evidenced by the resistivity ratio, {rho}{sub c}/{rho}{sub ab}{approx}35, at 300 K. This suggests an easier charge hopping in the [CrO{sub 2}] planes rather than along (Cr-O-Cu) pathways, i.e. along c axis. Highlights: Black-Right-Pointing-Pointer R-CuCrO{sub 2} plate-like single crystals have been synthesised by the flux method. Black-Right-Pointing-Pointer Growth takes place layer-by-layer and some growth defects have been observed. Black-Right-Pointing-Pointer CuCrO{sub 2} single crystals exhibit a unique antiferromagnetic transition at T{sub N}=24 K. Black-Right-Pointing-Pointer Transport measurements reveal that the resistivity is highly anisotropic.