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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Tombrello, Thomas A.↗
NASA NTRS1990

Memory switches based on metal oxide thin films

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Ramesham, Rajeshuni↗
NASA NTRS1992

Pyrolytic boron nitride coatings on ceramic yarns and fabrication of insulations

Pyrolytic boron nitride (PBN) was deposited on Nicalon NL 202 silicon carbide yarns at 1000 to 1200 C with the goal of improving the resistance of the Nicalon to deterioration in an aerodynamic environment at temperatures up to 1000 C. For continuous coating, the yarns were fed through the deposition chamber of a pilot plant sized CVD furnace at a rate of about 2 feet per minute. PBN coatings were obtained by reacting boron trichloride and ammonia gases inside the deposition chamber. Most of the PBN coatings were made at around 1080 C to minimize thermal degradation of the Nicalon. Pressures were typically below 0.1 Torr. The coated yarns were characterized by weight per unit length, tensile strength and modulus, scanning electron microscopy, and scanning Auger microscopy. The PBN coated Nicalon was woven into cloth, but was not entirely satisfactory as a high temperature sizing. Several 13 in. square pieces of Nicalon cloth were coated with PBN in a batch process in a factory sized deposition furnace. Samples of cloth made from the PBN coated Nicalon were sewn into thermal insulation panels, whose performance is being compared with that of panels made using uncoated Nicalon.

Moore, Arthur W.↗
NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS1995

Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection

Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.

Hunter, Gary W.↗
DOE OSTI2020

Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells

Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultra high efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks, on top of a full-area intrinsic amorphous silicon layer. High temperature annealing then crystallized the a-Si:H to poly Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 Ω·cm to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. Lastly, this demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Dynamics of PDMS- g -PDMS Bottlebrush Polymers by Broadband Dielectric Spectroscopy

Poly(dimethylsiloxane) (PDMS)-based bottlebrush polymers, PDMS-g-PDMS, have been synthesized by anionic polymerization in combination with a condensation-based grafting reaction. Bottlebrush polymers show intriguing features, e.g., extremely low viscosities. Hereby, studies of their dynamics are rare. Therefore, we focus on the segmental relaxation by broadband dielectric spectroscopy. An increasing cross-sectional radius proportional to the increasing side chain length has been observed by small-angle neutron scattering over three samples. Here, a comparison of the segmental relaxation times of the bottlebrushes with the respective linear chains reveals slower dynamics in the former. For longer chains, this effect vanishes.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Coupled Roles of Surface Chemistry and Hydrogen-Assisted Cycling in Ruthenium Atomic Layer Deposition on Silicon Oxides

Ruthenium (Ru) is a promising interconnect material for advanced semiconductor technologies due to its favorable scaling characteristics, including a short electron mean free path and strong electromigration resistance. In semiconductor integration, silicon oxide-based dielectrics serve as dominant insulating materials and constitute ubiquitous interfaces for metallization; however, their formation-dependent surface chemistry and its impact on Ru growth remain insufficiently explored. Here, we investigate Ru ALD on native oxide SiO x (N-SiO x ) and thermally grown SiO 2 (T-SiO 2 ) as model substrates using bis(ethylcyclopentadienyl)ruthenium(II) [Ru(EtCp) 2 ] under two distinct reactant-sequence environments: AB-type (Ru(EtCp) 2 /O 2 ) and hydrogenassisted ABC-type (Ru(EtCp) 2 /O 2 /H 2 ). Under the AB-type process, both N-SiO x and T-SiO 2 exhibit pronounced nucleation delay. N-SiO x shows earlier nucleation and higher nucleation density than T-SiO 2 , plausibly attributed to differences in surface hydroxyl populations. Similar temperature-dependent phase evolution is observed on both substrates, with mixed Ru and RuO 2 phases at 250 °C and predominantly metallic Ru at 300 °C accompanied by increased morphological roughening. In contrast, incorporating an H 2 subpulse (ABC-type) mitigates nucleation delay, particularly on hydroxyl-deficient T-SiO 2 , thereby reducing the substratedependent disparity observed under AB cycling. Moreover, RuO 2 formation is suppressed even at 250 °C on both substrates, shifting growth toward more metallic Ru with reduced resistivity (∼20 μΩ·cm at ∼ 20 nm on N-SiO x ). These trends suggest that H 2 influences the surface reaction pathway, contributing to enhanced metallic stabilization and altered early stage growth kinetics. Overall, this work clarifies the coupled roles of substrate chemistry and reactant-sequence design in governing Ru nucleation and early stage film evolution, providing insight relevant to next-generation interconnect integration and future area-selective deposition strategies.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Anomalous softening of 3D printed elastomeric foam irradiated under compressive strain

Elastomeric foam is an essential component in many industrial and technological settings, primarily as thermal insulators and as positional/mechanical support cushions. In particular, silicone foam is utilized in harsh environments due to exceptional thermal and chemical stability. Under service conditions within certain applications such material gets exposed to a high dosage of gamma radiation, which can permanently alter the material’s structural and mechanical response properties. Most studies on gamma-exposure under inert or oxidative atmosphere indicate hardening of silicone foam, which is attributed to radiation-induced enhancement in chemical cross-linking. Here we report two contrasting effects depending on whether (non-oxidative) radiation exposure is carried out with the foam under zero or finite compressive strain. While in the former case we observe radiation-hardening consistent with previous studies, in the latter case (50% porous foam under 30% uniaxial compression) we see a monotonic decrease in Young’s modulus with increasing dosage, although solvent swelling experiments on the constituent rubber indicate a net increase in cross-link density independent of the state of strain. We quantitatively model all dose-dependent data using the Ogden Hyperfoam strain-energy function within the framework of Tobolsky two-network scheme and attribute the above anomaly to a combined effect of radiation-induced thickness change (compression set) and inherent nonlinearity in the foam’s stress-strain response.

Coarse-grained models↗
DOE OSTI2023

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal–insulator–semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf 0.5 Zr 0.5 O 2 (HZO) as a gate dielectric. Compared with Schottky gate HEMT, the MISHEMT with a gate length (L G ) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (I ON /I OFF ) of 9.3 × 10 7 , a subthreshold swing of 130 mV dec -1 , a low drain-induced barrier lowing of 45 mV V -1 , and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (f T ) of 155 GHz and a maximum oscillation frequency (f max ) of 250 GHz, resulting in high (f T × f max ) 1/2 of 197 GHz and the record high Johnson's figure-of-merit (JFOM = f T × BV) of 5.4 THz V among the reported GaN MISHEMTs on Si. Further, the power performance at 30 GHz exhibits a maximum output power of 1.36 W mm -1 , a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.

42 ENGINEERING↗
NASA NTRS1972

Synthesis of temperature and solvent-resistant polymers

Development of silicone polymers, polyimides, and polyisocyanurates for use as insulation, coatings, or adhesives under adverse environmental conditions is discussed. Chemical structure of the organic compounds is presented. Physical and mechanical properties of the compounds are analyzed.

Webster, J. A.↗
NASA NTRS1980

Plasma chemistry for inorganic materials

Practical application of plasma chemistry to the development of inorganic materials using both low temperature and warm plasmas are summarized. Topics cover: the surface nitrification and oxidation of metals; chemical vapor deposition; formation of minute oxide particles; the composition of oxides from chloride vapor; the composition of carbides and nitrides; freezing high temperature phases by plasma arc welding and plasma jet; use of plasma in the development of a substitute for petroleum; the production of silicon for use in solar cell batteries; and insulating the inner surface of nuclear fusion reactor walls.

Matsumoto, O.↗
NASA NTRS1987

Light, Strong Insulating Tiles

Improved lightweight insulating silica/aluminum borosilicate/silicon carbide tiles combine increased tensile strength with low thermal conductivity. Changes in composition substantially improve heat-insulating properties of silica-based refractory tile. Silicon carbide particles act as high-emissivity radiation scatterers in tile material.

Cordia, E.↗
NASA NTRS2010

NASA Tech Briefs, January 2010

Topics covered include: Cryogenic Flow Sensor; Multi-Sensor Mud Detection; Gas Flow Detection System; Mapping Capacitive Coupling Among Pixels in a Sensor Array; Fiber-Based Laser Transmitter for Oxygen A-Band Spectroscopy and Remote Sensing; Low-Profile, Dual-Wavelength, Dual-Polarized Antenna; Time-Separating Heating and Sensor Functions of Thermistors in Precision Thermal Control Applications; Cellular Reflectarray Antenna; A One-Dimensional Synthetic-Aperture Microwave Radiometer; Electrical Switching of Perovskite Thin-Film Resistors; Two-Dimensional Synthetic-Aperture Radiometer; Ethernet-Enabled Power and Communication Module for Embedded Processors; Electrically Variable Resistive Memory Devices; Improved Attachment in a Hybrid Inflatable Pressure Vessel; Electrostatic Separator for Beneficiation of Lunar Soil; Amorphous Rover; Space-Frame Antenna; Gear-Driven Turnbuckle Actuator; In-Situ Focusing Inside a Thermal Vacuum Chamber; Space-Frame Lunar Lander; Wider-Opening Dewar Flasks for Cryogenic Storage; Silicon Oxycarbide Aerogels for High-Temperature Thermal Insulation; Supercapacitor Electrolyte Solvents with Liquid Range Below -80 C; Designs and Materials for Better Coronagraph Occulting Masks; Fuel-Cell-Powered Vehicle with Hybrid Power Management; Fine-Water-Mist Multiple-Orientation-Discharge Fire Extinguisher; Fuel-Cell Water Separator; Turbulence and the Stabilization Principle; Improved Cloud Condensation Nucleus Spectrometer; Better Modeling of Electrostatic Discharge in an Insulator; Sub-Aperture Interferometers; Terahertz Mapping of Microstructure and Thickness Variations; Multiparallel Three-Dimensional Optical Microscopy; Stabilization of Phase of a Sinusoidal Signal Transmitted Over Optical Fiber; Vacuum-Compatible Wideband White Light and Laser Combiner Source System; Optical Tapers as White-Light WGM Resonators; EPR Imaging at a Few Megahertz Using SQUID Detectors; Reducing Field Distortion in Magnetic Resonance Imaging; Fluorogenic Cell-Based Biosensors for Monitoring Microbes; A Constant-Force Resistive Exercise Unit; GUI to Facilitate Research on Biological Damage from Radiation; On-Demand Urine Analyzer; More-Realistic Digital Modeling of a Human Body; and Advanced Liquid-Cooling Garment Using Highly Thermally Conductive Sheets.

Source record↗
NASA NTRS2011

Advanced High-Temperature Flexible TPS for Inflatable Aerodynamic Decelerators

Typical entry vehicle aeroshells are limited in size by the launch vehicle shroud. Inflatable aerodynamic decelerators allow larger aeroshell diameters for entry vehicles because they are not constrained to the launch vehicle shroud diameter. During launch, the hypersonic inflatable aerodynamic decelerator (HIAD) is packed in a stowed configuration. Prior to atmospheric entry, the HIAD is deployed to produce a drag device many times larger than the launch shroud diameter. The large surface area of the inflatable aeroshell provides deceleration of high-mass entry vehicles at relatively low ballistic coefficients. Even for these low ballistic coefficients there is still appreciable heating, requiring the HIAD to employ a thermal protection system (TPS). This TPS must be capable of surviving the heat pulse, and the rigors of fabrication handling, high density packing, deployment, and aerodynamic loading. This paper provides a comprehensive overview of flexible TPS tests and results, conducted over the last three years. This paper also includes an overview of each test facility, the general approach for testing flexible TPS, the thermal analysis methodology and results, and a comparison with 8-foot High Temperature Tunnel, Laser-Hardened Materials Evaluation Laboratory, and Panel Test Facility test data. Results are presented for a baseline TPS layup that can withstand a 20 W/cm2 heat flux, silicon carbide (SiC) based TPS layup, and polyimide insulator TPS layup. Recent work has focused on developing material layups expected to survive heat flux loads up to 50 W/cm2 (which is adequate for many potential applications), future work will consider concepts capable of withstanding more than 100 W/cm2 incident radiant heat flux. This paper provides an overview of the experimental setup, material layup configurations, facility conditions, and planned future flexible TPS activities.

DelCorso, Joseph A.↗
NASA NTRS1990

Converting a carbon preform object to a silicon carbide object

A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

Levin, Harry↗
NASA NTRS1989

Process for coating an object with silicon carbide

A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.

Levin, Harry↗
NASA NTRS2018

Microgravity Experiments of Solid Waste Conversion into Useful Commodities

This Summer I participated in two projects at Kennedy Space Center in Cape Canaveral, Florida. The projects focus on the NASA's Deep Space Gateway applications for future Mars travel. All of these projects use recycling technology to use resources found on Earth and on other planets for fuel and other environmental applications. The first project I took the lead on is “Plasma Arc Gasification.” Plasma is a high temperature and very efficient way to process waste to create usable byproducts. The plasma chamber in temperature is comparable to that of the sun and this energy will help create an environment in which the waste can be recycled properly for not only plant support, but also for possible fuel application as well. I preformed the tests in a quartz tube, which is used to hold the waste (cotton, plastics, nylon, paper and a human waste simulant) and the waste is then combusted using O2 (present in air) into gases such as H2, H2O, CH4 and CO2. I determined which gases are present using a Fourier-transform infrared spectroscopy (FTIR) machine, which analyzes the peaks of the gases using liquid nitrogen. Problems arose in the beginning from the reactor emitting electromagnetic waves (EMI) that interfered with the technology of the experiment, specifically the thermocouples. This was solved through multiple tests with the positioning of the thermocouple power supply further away from the plasma reactor. I worked with another intern, Daniel Santander, who developed a space plant chamber which uses CO2 and H2O (harvested from the plasma reactor) to grow plants in space. The chamber possess a CO2 monitor, which controls the amount of gas that enters the chamber, along with a water integration system to supply the amount of water needed for proper plan growth. This technology will then be used for plant growth in space for the Astronauts on future space flights and possibly on the International Space Station (ISS). The second project I worked on is the “Orbital Syngas / Commodity Augmentation Reactor (OSCAR)” which focuses on the issues experienced in long-duration space flight regarding waste disposal. In previous space flight missions, waste was stored on board and returned to Earth for disposal. This technique is not applicable to long space flight missions to Mars due to the rocket being months away from Earth. OSCAR is using microgravity waste disposal techniques to produce fuels from the recycled waste. The waste is converted to syngas through a thermal degradation process. This process helps create an environmentally friendly way to dispose and reuse trash on board the space craft. Currently waste is being tested in the form of cotton and plastics. OSCAR is designed as a microgravity reactor that is currently being tested in a drop tower rig at Glenn Research Center. I helped design the 3D model for the insulation that will line the reactor. The first few trials, I dissolved the plastic of the mold in acetone. This method worked, but was very costly. I then received a silicone material to construct the mold from Swamp Works here at Kennedy. Through multiple trials with the silicone, this method worked best for developing the end pieces of the insulation for the chamber.

Plasma↗