SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The Terrestrial Planet Finder mission requires extreme dynamic stability at cryogenic temperatures in order to carry out its objectives of searching for and observing extraterrestrial planets.
This paper describes a proof-of-concept inchworm actuator designed to provide nanometer resolution, high stiffness, large output force, long travel range, and compactness for ultraprecision positioning applications in space.
A method is reported to prepare siloxane microballoons that can be loaded into a direct ink write siloxane ink for 3D printing. The resulting structure is subjected to a solvent removal and supercritical drying process to provide a final printed siloxane having both macroscopic and microscopic porosity. Core-shell particles are generated by an emulsion template and phase separation process. Intra-strand closed-cell porosities can be achieved between 10 and 40 vol% thus facilitating additional compressive strain before lockup. Here short term compression set testing highlights the excellent shape retention properties of these elastomers, which have less than 8% relative compression set under load.
Not Available
Not provided.
Not provided.
Not provided.
Not provided.
Spin qubits based on Si and Si 1–x Ge x quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here, we use hybrid functional calculations to investigate possible atomistic sources of charge noise, focusing on charge trapping at Si and Ge dangling bonds (DBs). We evaluate the role of global and local environment in the defect levels associated with DBs in Si, Ge, and Si 1–x Ge x alloys, and consider their trapping and excitation energies within the framework of configuration coordinate diagrams. We additionally consider the influence of strain and oxidation in charge-trapping energetics by analyzing Si and GeSi DBs in SiO 2 and strained Si layers in typical Si 1–x Ge x quantum dot heterostructures. Our results identify that Ge dangling bonds are more problematic charge-trapping centers both in typical Si 1–x Ge x alloys and associated oxidation layers, and they may be exacerbated by compositional inhomogeneities. In conclusion, these results suggest the importance of alloy homogeneity and possible passivation schemes for DBs in Si-based quantum dot qubits and are of general relevance to mitigating possible trap levels in other Si, Ge, and Si 1–x Ge x -based metal-oxide-semiconductor stacks and related devices.
Explore the source record for details and available documents.
A protective tin oxide layer formed by atomic-layer deposition limits surface recombination at n-Si surfaces and produces ∼620 mV of photovoltage on planar n-Si photoanodes. The layer conformally coats structures such as Si microcone arrays.
Thin films of nickel oxide (NiO x ), cobalt oxide (CoO x ) and nickel–cobalt oxide (NiCoO x ) produced integrated, protected Si (111) photoanodes integrated, protected Si photoanodes that did not require deposition of a separate heterogeneous electrocatalyst for water oxidation.