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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Numerical Analysis of Time Resolved Photoluminescence for Alumina/Cd(Se,Te) Double Heterostructures

Al2O3 has demonstrated excellent Cd(Se,Te) surface passivation. In this work, recombination mechanisms were investigated by comparing simulations of time resolved photoluminescence (TRPL) to PL decay data (320 ns effective lifetime) for Al2O3 /Cd(Se,Te)/Al2O3 double heterostructures. Models were employed to investigate the effects of bulk and surface recombination, electric fields, mobility, and doping by simulating intensity-dependent single- (1PE) and two-photon excitation (2PE) TRPL. 2PE simulations replicate decay behavior while 1PE simulations require attention to charge redistribution. Various coupled mechanisms cannot be distinguished from PL decay data alone. Complementary measurements are required to constrain the model parameters and isolate mechanisms.

CdTe↗
DOE OSTI2022

On the Effect of Indium Chloride Dose on the Recrystallization of Cu(In,Ga)Se 2 Thin Films and associated Devices

Cu(In,Ga)Se 2 thin films deposited by a single-stage co-evaporation process at 350 ºC on molybdenum coated soda lime glass substrate were annealed post-deposition in InCl 3 vapor. The amount of InCl 3 and Se was varied. Here, the annealing treatment was done at 450 ºC for 30 minutes. Increase in grain size was observed after the treatment in all cases by X-ray diffraction. Device performance was low, but improved slightly after KCN etching.

14 SOLAR ENERGY↗
DOE OSTI2021

Growth of Cd 0.9 Zn 0.1 Te 1-y Se y Single Crystals for Room Temperature Gamma-Ray Detection

Quaternary Cd 0.9 Zn 0.1 Te 1-y Sey (CZTS) single crystals, a novel room-temperature nuclear radiation detector semiconductor material, have been grown using a modified vertical Bridgman method (VBM) and a travelling heater method (THM). The percentage concentration of selenium in the VBM-grown crystal was 3% and that in the THM-grown crystal was 2%. While the THM Frisch collar detector (4.4 × 4.4 × 10.7 mm 3 ) produced a highly resolved pulse height spectra (PHS) with a resolution of ~1.06% for 662-keV gamma rays without any correction, the VBM-grown detector (10 × 10 × 2 mm 3 ) offered a high energy resolution of ~2% after application of a digital biparametric correction. The high-resolution performance of these detectors has been attributed to the addition of Se in the Cd 0.9 Zn 0.1 Te (CZT) matrix. Ab-initio calculations based on density functional theory (DFT) also confirmed that the addition of Se in the CZT matrix helps to reduce the formation of TeCd and the TeZn anti-sites. The VBM-grown crystals were characterized using powder x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS). While XRD results revealed sharp diffraction peaks confirming the crystalline nature of the grown crystal, the EDS results confirmed the targeted stoichiometry of the elemental composition. The bulk resistivity of the grown crystal was calculated to be ~3 × 10 10 Ω-cm from current-voltage characteristics recorded at room temperature in a planar configuration, ensuring that the grown CZTS crystals have low dark current as required for detector-grade crystals.

42 ENGINEERING↗
DOE OSTI2026

AmeriFlux FLUXNET-1F US-IAC Iowa State University SE tower

This is the AmeriFlux Management Project (AMP) created FLUXNET-1F version of the carbon flux data for the site US-IAC Iowa State University SE tower. This is the FLUXNET version of the carbon flux data for the site US-IAC Iowa State University SE tower produced by applying the standard ONEFlux (1F) software. Site Description - This is a 4 ha (200 m x 200 m) sorghum-corn-soybean rotation established at the Sustainable Advanced Bioeconomy Research (SABR) farm at Iowa State University. The site has a long history of conventional row-cropping, predominantly corn-soy rotations. In the immediately preceding growing season, soybeans were grown at the SABR farm.

(Rojda), Guler Aslan Sungur↗
DOE OSTI2024

Surface Electronic Structure of Cr Doped Bi 2 Se 3 Single Crystals

Here, by using angle-resolved photoemission spectroscopy, we showed that Bi 2-x Cr x Se 3 single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi 2 Se 3 . These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Intermediate Bandgap (IB) Cu 3 VS x Se 4−x Nanocrystals as a New Class of Light Absorbing Semiconductors

A new family of highly uniform, cubic-shaped Cu 3 VS x Se 4−x (CVSSe; 0 ≤ x ≤ 4) nanocrystals based on earth-abundant materials with intermediate bandgaps (IB) in the visible range is reported, synthesized via a hot-injection method. The IB transitions and optical band gap of the novel CVSSe nanocrystals are investigated using ultraviolet-visible spectroscopy, revealing tunable band gaps that span the visible and near-infrared regimes. The composition-dependent relationships among the crystal phase, optical band gap, and photoluminescence properties of the novel IB semiconductors with progressive substitution of Se by S are examined in detail. High-resolution transmission electron microscopy and scanning electron microscopy characterization confirm the high crystallinity and uniform size (~19.7 nm × 17.2 nm for Cu 3 VS 4 ) of the cubic-shaped nanocrystals. Density functional theory (DFT) calculations based on virtual crystal approximation support the experimental findings, showing good agreement in lattice parameters and band gaps across the CVSSe series and lending confidence that the targeted phases and compositions have been successfully realized. A current conversion efficiency, i.e., incident photon-to-current efficiency, of 14.7% was achieved with the p-type IB semiconductor Cu 3 VS 4 . These novel p-type IB semiconductor nanocrystals hold promise for enabling thin film solar cells with efficiencies beyond the Shockley–Queisser limit by allowing sub-band-gap photon absorption through intermediate-band transitions, in addition to the conventional direct-band-gap transition.

Cu3VSxSe4−x↗
DOE OSTI2026

Data Associated with "Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass"

This is data associated with the publication " Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass " by Aesha P. Patel, Ryan Muzzio, Matthew R. Young, Robert Morrissey, Suresh Chaulagain, B. Edward Sartor, Prabodika N. Kaluarachchi, Christian Velez, Joshua A. Brown, Joel N. Duenow, Stephen Glynn, Michael J. Heben, Zhaoning Song, Nikolas J. Podraza, Adam B. Phillips, Randy J. Ellingson, Matthew O. Reese. All data associated with each figure in the manuscript and supplementary should be available in this dataset. A readme file is also included to provide some guidance. Abstract: Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front-contact instability under higher-temperature processing. Here, the role of front-contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front-contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.

14 SOLAR ENERGY↗
NASA NTRS1988

Growth and characterization of Hg(1-x)Cd(x)Se alloys

A detailed evaluation of the influence of growth conditions on the radial and axial compositional variations in directionally solidified Hg(1-x)Cd(x)Se alloys was performed. The measured axial compositional profiles were fitted to theoretical profiles to determine the effective solute (CdSe) diffusion coefficient (D) for the Hg(1-x)Cd(x)Se system. The value for D was estimated to be 3.0 + or - 0.5 x 10 to the -5th sq cm/s and did not appear to be significantly affected by the rate of crystal growth. The axial crystal uniformity was shown to be highly growth-rate dependent, with the faster growth rates producing crystals of more uniform composition in the axial direction. The magnitude of the radial variations was also shown to be highly growth-rate dependent, with the slower growth rates producing crystals of greater radial uniformity. This translation rate dependence of the radial uniformity is discussed in terms of lateral solute diffusion and convective interfacial fluid flows.

Andrews, R. N.↗
NASA NTRS1989

Purification, growth, and characterization of Zn(x)Cd(1-x)Se crystals

The purification of starting materials which were used in the growth of Zn(x)Cd(1-x)Se (x = 0.2) single crystals using the traveling solution method (TSM) is reported. Up to 13 cm long single crystals and as grown resistivities of 6 x 10(exp 12) ohm/cm could be achieved. Infrared and Raman spectra of Zn(0.2)Cd(0.8)Se are also presented and discussed.

Silberman, E.↗
NASA NTRS1991

Characterization of directionally solidified Hg(1-x)Zn(x)Se semiconducting alloys

Hg(1-x)Zn(x)Se alloys with composition between x = 0.08 and 0.115 were synthesized from elemental constituents and were resolidified using a Bridgman-Stockbarger growth technique. By performing precision mass-density measurements on selected wafers cut perpendicular to the growth axis, it was shown that the axial compositional profiles fit a numerical solution to the 1D diffusion equation which takes into account the variation of interface velocity with time. Infrared transmission-edge measurements performed on selected transverse slices from each ingot showed that the relative radial variations in composition decreased with decreasing growth rate. Van der Pauw measurements on selected wafers showed that the 10 exp 18/cu cm electron concentration, typical of as-grown crystals, could be reduced by approximately an order of magnitude by annealing in Se vapor.

Cobb, S. D.↗
NASA NTRS1998

Microstructural Development of Directionally Solidified Hg(1-x)Zn(x)Se Alloys

Hg(1-x)Zn(x)Se alloys have been studied as an alternative to HgCdTe for the detection of electromagnetic radiation, because the shorter ZnSe and HgSe bonds were predicted to improve lattice stability. Previous studies showed that optical properties were stable with time and that the microhardness was higher than for HgTe based alloys. However, for this material to be commercially viable, compositional variations must be reduced, and the distribution of defects induced by the growth process must be understood. The basic structural properties of bulk materials were characterized, and dislocation etch pit densities were measured to determine whether the addition of Zn to the HgSe lattice reduced the potential for dislocation formation. Hg(0.9)Zn(0.1)Se alloys were directionally solidified using a modified Bridgman-Stockbarger method and in an applied magnetic field. Radial compositional variations were greatly reduced when solidification occurred in an applied magnetic field. The combination of a convex liquid-solid interface shape and a method for reduced wetting produced boules that were a single crystal after reaching full diameter. Observed surface features indicated ampoule wetting could be eliminated using a graphite getter. Microstructural characteristics were greatly improved over HgCdTe alloys, In six boules, a total of only one twin was observed, and no inclusions were found. A method for polishing and producing dislocation etch pits was developed for these alloys, revealing dislocation etch pit densities one to two orders of magnitude less than HgTe based alloys. A kink in the thermal profile during processing of one boule generated more dislocations than did lattice mismatch due to compositional variations. The results of this investigation indicate this alloy has improved microstructural properties and resistance to dislocation formation compared with similar II-VI alloys, and should be further investigated for the detection of electromagnetic radiation.

Cobb, S. D.↗
NASA NTRS2000

BOREAS RSS-3 Reflectance Measured from a Helicopter-Mounted SE-590

The BOREAS RSS-3 team collected multiple remotely sensed data sets from the NASA UH-1 helicopter. This data set includes helicopter-based radiometric measurements of forested sites acquired during BOREAS made with an SE-590 processed to reflectance factors. The data used in this analysis were collected in 1994 during the three BOREAS IFCs at numerous tower and auxiliary sites in both the NSA and the SSA. The 15-degree FOV of the SE-590 yielded a ground resolution of approximately 79 m at the 300-m nominal altitude. The data are provided in tabular ASCII files.

Hall, Forrest G.↗
NASA NTRS2016

Exposing Hidden Parts of the SE Process: MBSE Patterns and Tools for Tracking and Traceability

An interesting benefit of applying Model-Based Systems Engineering (MBSE) is that the rigor and coordination intrinsic to MBSE forces us to apply Systems Engineering to our own traditional activities, processes, and products, which results in richer, more expressive models, more powerful reasoning, and a clearer and more effective Systems Engineering (SE) process. Our MBSE frameworks and languages contain semantic richness sufficient to describe our systems at any particular point in time, often with an emphasis on the description of the system at major milestones. This is unarguably a real asset. However, when we apply MBSE in service of missions that are in development, rapidly evolving, of a larger scale, and where interpersonal communication is a critical part of the design process, we discover that our frameworks and languages are still not quite rich enough to enable us to ask the kinds of questions and get the kinds of answers we want in order to address the concerns of day to day work. This paper will discuss some patterns and tools we have developed to help address some of the not-always-explicit SE concerns that we have identified through our MBSE work. Particularly, this paper will discuss flexible yet practical methods for defining and capturing maturity, workflow, and agreement traceability within our system models, extensible ways to perform and track model audits, and ways to report and interact with this knowledge in the context of MBSE applied to support NASA’s Europa Project.

Jackson, Maddalena↗
NASA NTRS2016

Exposing Hidden Parts of the SE Process: MBSE Patterns and Tools for Tracking and Traceability

An interesting benefit of applying Model-Based Systems Engineering (MBSE) is that the rigor and coordination intrinsic to MBSE forces us to apply Systems Engineering to our own traditional activities, processes, and products, which results in richer, more expressive models, more powerful reasoning, and a clearer and more effective Systems Engineering (SE) process. Our MBSE frameworks and languages contain semantic richness sufficient to describe our systems at any particular point in time, often with an emphasis on the description of the system at major milestones. This is unarguably a real asset. However, when we apply MBSE in service of missions that are in development, rapidly evolving, of a larger scale, and where interpersonal communication is a critical part of the design process, we discover that our frameworks and languages are still not quite rich enough to enable us to ask the kinds of questions and get the kinds of answers we want in order to address the concerns of day to day work. This paper will discuss some patterns and tools we have developed to help address some of the not-always-explicit SE concerns that we have identified through our MBSE work. Particularly, this paper will discuss flexible yet practical methods for defining and capturing maturity, workflow, and agreement traceability within our system models, extensible ways to perform and track model audits, and ways to report and interact with this knowledge in the context of MBSE applied to support NASA’s Europa Project

Jackson, Maddalena↗
DOE OSTI2021

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO: Preprint

Time-resolved photoluminescence (TRPL) with two excitation wavelengths – 670 (standard) and 405 nm – was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the use of Mg y Zn 1-y O buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for Mg y Zn 1-y O/CdSe x Te 1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSe x Te 1-x films grown on Al 2 O 3 , which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

cadmium telluride↗
DOE OSTI2020

Materials Data on Se(Br3O)2 by Materials Project

O2SeBr6 is Fluorite structured and crystallizes in the cubic Fm-3m space group. The structure is zero-dimensional and consists of eight water molecules and four SeBr6 clusters. In each SeBr6 cluster, Se2- is bonded in an octahedral geometry to six equivalent Br1+ atoms. All Se–Br bond lengths are 2.54 Å. Br1+ is bonded in a single-bond geometry to one Se2- atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Se(Br3N)2 by Materials Project

N2SeBr6 is Fluorite structured and crystallizes in the cubic Fm-3m space group. The structure is zero-dimensional and consists of eight ammonia molecules and four SeBr6 clusters. In each SeBr6 cluster, Se2- is bonded in an octahedral geometry to six equivalent Br atoms. All Se–Br bond lengths are 2.58 Å. Br is bonded in a single-bond geometry to one Se2- atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Se(NCl3)2 by Materials Project

N2SeCl6 is Fluorite structured and crystallizes in the cubic Fm-3m space group. The structure is zero-dimensional and consists of eight ammonia molecules and four SeCl6 clusters. In each SeCl6 cluster, Se2- is bonded in an octahedral geometry to six equivalent Cl1- atoms. All Se–Cl bond lengths are 2.31 Å. Cl1- is bonded in a single-bond geometry to one Se2- atom.

36 MATERIALS SCIENCE↗