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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Sputter-Coated Metal Screening for Small Molecule Analysis and High-Spatial Resolution Imaging in Laser Desorption Ionization Mass Spectrometry

Nanoparticles are efficient matrices in laser desorption/ionization (LDI) mass spectrometry (MS), especially for the profiling or imaging of small molecules. Recently, solvent-free physical vapor desorption (PVD), or sputter coating, was adopted as a homogenous method to rapidly apply metal nanoparticles (NPs) in situ to samples prior to LDI MS or MS imaging analysis. However, there has been no systematic study comparing different metal targets for the analysis of a variety of small molecule metabolites. Here, we present a screening and optimization of various sputter-coated metals, including Ag, Au, Cu, Pt, Ni, and Ti, for LDI analysis of small molecules in both positive and negative ion modes. Optimized sputter coating is then applied to high-spatial resolution LDI mass spectrometry imaging (MSI) of maize root and seed cross-sections. Noble metals, Ag, Au, and Pt, are found to be much more efficient than transition metals and organic matrices for most small metabolites. Sputter-coated metals are efficient for neutral lipids, such as triacylglycerols and diacylglycerols, but are very inefficient for most phospholipids. .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Differences in Sb 2 Te 3 growth by pulsed laser and sputter deposition

High quality van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb 2 Te 3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb 2 Te 3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb 2 Te 3 and superlattice crystal qualities observed in the literature. Finally, these results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The corrosivity and passivity of sputtered Mg-Ti alloys

Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Molecular dynamics simulations of reflection and sputtering behavior of boron under deuterium ion irradiation

Boronization is a commonly used method of wall conditioning in fusion reactors. The application of boron films to the plasma-facing materials results in enhanced plasma performance due to the reduction of intrinsic impurities. This is primarily driven by a reduction in oxygen content that is chemically trapped in the boron film. The reactive nature of these boron films also raises questions concerning interactions with hydrogen isotopes. In this work, boron-deuterium interactions were studied using molecular dynamics (MD). Reactive force field potentials were used to model the chemical interactions between B and D. An amorphous boron substrate was irradiated by D atoms at varying incident energies, 10 eV < E i < 150 eV and angles, 0° < α < 85°. The reflection probability was calculated and compared to results from the commonly-used binary collision approximation (BCA) method. This comparison found that the BCA underestimated the reflection probability at E i < 35 eV and α > 45 ∘ . The source of this discrepancy was found to be the surface binding energy model. The BCA calculation with an isotropic surface binding energy model was more closely aligned to the MD result. This, in combination with a correction function based on the MD results allows for corrections to the reflection probability of deuterium impinging on boron surfaces. The sputtering of the substrate material was also studied. While this study did not contain sufficient events to quantitatively describe the sputtering behavior, some qualitative results emerged: namely, chemical sputtering of B and D-containing molecules (BD, BD 2 , BD 3 ) at low ( < 20 eV) incident deuterium energies. This result suggests that chemical sputtering could be a significant factor in limiting boron coating lifetime when exposed to lower ion energies, such as those in detached plasmas. The results show that chemical interactions should be taken into account when modeling the interactions between D ions and B surfaces.

Boron↗
DOE OSTI2024

Net lithium deposition and dominant self-sputtering in lithium tokamak experiment-β with a liquid lithium wall

We observed enhanced net lithium deposition and lithium erosion, possibly dominated by physical sputtering of lithium by lithium-ion bombardment, on the outer plasma-facing surface in the Lithium Tokamak eXperiment-β (LTX-β) during liquid lithium wall operations. Silicon crystal samples with micro-trenches (30 μm × 30 μm × 2–7 μm deep) were exposed to hydrogen plasmas in LTX-β for solid and liquid lithium wall operations. Post-mortem analysis using X-ray photoelectron spectroscopy combined with argon ion sputtering measured net lithium deposition of 8.2 or 21 nm on the silicon crystal surface exposed for ~ 50 repeated shots of ~ 50-ms hydrogen plasma discharges during the liquid lithium wall operations at a vessel temperature of 475 K. Energy dispersive X-ray spectroscopy measured oxygen concentration patterns on the micro-trench floors, which were due to oxidized lithium deposition. Using the inhomogeneous oxygen concentration pattern caused by an ion-shadowing effect associated with the micro-trench’s geometric structure, we determined a polar incident ion direction of 68.4 ± 1.6° referenced to the surface normal direction. This observation was well-explained by the hypothesis that self-sputtering of Li was a dominant lithium erosion source in addition to lithium sputtering by hydrogen bombardment.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Electronic excitation of uranium atoms sputtered from uranium metal and oxides

Atoms sputtered from solids by energetic ion irradiation often partition across electronically excited states. We developed a resonance ionization method to measure the population of the uranium 5 K 5 state (620 cm -1 ) relative to the 6 L 6 ground state for atoms sputtered from metallic and oxide surfaces. A considerable fraction of sputtered atoms reside in the 5 K 5 state, and the fraction increases as the surface oxidizes. The effect is consistent across uranium metal, UO 2 , and U 3 O 8 , and is invariant with the departing velocity of the sputtered atom. The data are not sufficient to determine the excitation mechanism, however they are qualitatively consistent with resonant electron transfer from the surface to the departing atom.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Effects of crystallographic and geometric orientation on ion beam sputtering of gold nanorods

Nanostructures may be exposed to irradiation during their manufacture, their engineering and whilst in-service. The consequences of such bombardment can be vastly different from those seen in the bulk. In this paper, we combine transmission electron microscopy with in situ ion irradiation with complementary computer modelling techniques to explore the physics governing the effects of 1.7 MeV Au ions on gold nanorods. Phenomena surrounding the sputtering and associated morphological changes caused by the ion irradiation have been explored. In both the experiments and the simulations, large variations in the sputter yields from individual nanorods were observed. These sputter yields have been shown to correlate with the strength of channelling directions close to the direction in which the ion beam was incident. Finally, craters decorated by ejecta blankets were found to form due to cluster emission thus explaining the high sputter yields.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment

Modification of an advanced ArF excimer lithographic photoresist by 400 eV Ar ion irradiation was observed in situ in real time using both infrared spectroscopy and a quartz microbalance sensor. The photoresist sputtering yields had a characteristic behavior; the sputtering yields were higher than unity at the beginning, until an ion dose of 2 Multiplication-Sign 10{sup 16} ions cm{sup -2}. Thereafter, the yields decreased immediately to almost zero and remained constant with the yield at zero until a dose of approximately 4 Multiplication-Sign 10{sup 16} ions cm{sup -2} was reached. At larger doses, the yields increased again and reached a steady-state value of approximately 0.6. This development of the sputtering yield after the onset of ion bombardment is explained by an ion-induced modification of the photoresist that includes preferential sputtering of individual groups, argon ion implantation and the generation of voids. All these effects must be taken into account to assess line-edge-roughness on a photoresist subjected to highly energetic ion irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Measurement of sputtered beryllium yield and angular distribution during nanostructure growth in a helium plasma

Here, the angular distribution and sputtering yield of beryllium exposed to helium plasma are estimated from analysis of line-integrated 2D imaging of Be-I line emission in a steady-state linear plasma device. As the surface nanostructure forms during plasma exposure on a ~100 s timescale (corresponding to a fluence of order 10 20 /cm 2 ) from nearly mono-energetic ion bombardment, a narrowing of the beryllium sputtering angle and a significant (~5×) drop in sputtering yield are observed. Lastly, these trends are found to be qualitatively consistent with modeling taking into account the effect of the surface morphology on sputtering yield and angular distribution.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Impact of ELM control techniques on tungsten sputtering in the DIII-D divertor and extrapolations to ITER

The free-streaming plus recycling model (FSRM) has recently been developed to understand and predict tungsten gross erosion rates from the divertor during edge localized modes (ELMs). In this work, the FSRM was tested against the experimental measurements of W sputtering during ELMs, conducted via fast neutral tungsten (WI) spectroscopy. Good agreement is observed using a variety of controlling techniques, including gas puffing, neutral beam heating, and plasma shaping to modify the pedestal stability boundary and, thus, the ELM behavior. ELM mitigation by pellet pacing was observed to strongly reduce W sputtering by flushing C impurities from the pedestal and reducing the divertor target electron temperature. No reduction of W sputtering was observed during the application of resonant magnetic perturbations (RMPs), in contrast to the prediction of the FSRM. Potential sources of this discrepancy are discussed. Lastly, the framework of the FSRM is utilized to predict intra-ELM W sputtering rates in ITER. It is concluded that W erosion during ELMs in ITER will be caused mainly by free-streaming fuel ions, but free-streaming seeded impurities (N or Ne) may increase the erosion rate significantly if present in the pedestal at even the 1% level. Impurity recycling is not expected to cause critical W erosion in ITER due to the very low target electron temperature.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2011

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Film Growth Dynamics During Pulsed Sputter Deposition (LDRD Final Report)

Novel materials synthesis and development using physical vapor deposition require our fundamental understanding of plasma conditions and film growth dynamics. A central theme is to control materials microstructure. Over the last few decades, the difficulty of thick heavy metal coatings has been one of the major bottlenecks limiting our studies of the important family of inertial-confinement-fusion (ICF) designs with colliding-shell targets. Our previous attempts to fabricate such coatings by conventional DC magnetron sputtering (DCMS) has had limited success due to the inherent complexity and our limited understanding of the deposition process. In this project, we have investigated the physics of a novel and promising pulsed sputter deposition process. We expanded the scientific foundation of sputter deposition processes through a combination of well-posed experiments and state-of-the-art characterizations. The following important scientific milestones have been achieved: (1) Successfully installed and tested a high-power impulse magnetron sputtering (HiPIMS) system; (2) Deployed a novel set of in-situ diagnostics during pulsed deposition, including a multibeam optical stress sensor (MOSS) system for real-time stress measurement, and Langmuir probe for the measurements of plasma physical properties. This allows us to monitor dynamically plasma conditions, ion flux and energy distributions, and film stress; (3) Investigated and obtained a fundamental understanding of HIPIMS on microstructure and stress control; (4) Successfully synthesized and demonstrated record-breaking strength nanocrystalline-nanotwinned (nnt) metals; (5) Successfully obtained high-quality, leak-proof Cr metal shells via HiPIMS method. The outcomes of this project could have transformational scientific and programmatic impacts, enabling novel materials synthesis and an experimental campaign with colliding shell target designs. The basic understanding of the deposition process has important implications to a broad range of industrial applications.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Radiofrequency-sputtered coatings for lubrication system components and other complex surfaces

Irregularly shaped surfaces, such as lubrication system components (ball bearings, seals, gears, etc.), can be coated on all surfaces, including irregular shapes, when radiofrequency sputtering is used. When the specimen is properly located with respect to the sputtering target, the sputtered material covers the entire surface of the object irrespective of its geometrical configuration. An adherent, dense film is formed. The film thickness varies from 20 to 50 percent on, for example, a hearing cage or race depending on its geometry. When sputtered solid film lubricants such as molybdenum disulfide are used, a film thickness only of the order of 10 to the minus 7th power m (thousands of angstroms) is required at the contacting areas. It is only essential to determine the required film thickness at the critical areas in need of lubrication. The sections outside the areas to be lubricated fall within the thickness deviation range of 20 to 50 percent, which still constitutes a negligible change respect to tolerance requirements.

Spalvins, T.↗
NASA NTRS1972

Sputtering and ion plating

The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

Source record↗
NASA NTRS1972

Change in transmittance of fused silica as a means of detecting material sputtered from components on a 5-cm ion thruster

Two endurance tests of a 5-cm mercury bombardment thruster are reported. Both tests used a translational screen-grid system with the beam vectored 10 degrees. The first test lasted 141 hours and the second test operated for 2026 hours. In each test two fused silica samples (solar cell covers), 2.0 cm by 2.1 cm, were placed in shielded holders to detect materials sputtered from the thruster. Spectral optical properties between 0.398 and 2.16 microns were measured on each sample, both before and after the endurance tests. The deposition on each sample was spectrographically analyzed to determine the type of materials sputtered from the thruster. It was found that sputtering from the neutralizer is highly dependent on its position with respect to the beam edge. The sputtering from the accelerator grid of the translational screen-grid system of the 2026 hour test was sufficient to form an opaque film on the sample located in the direction opposite to the vectored beam.

Weigand, A. J.↗
NASA NTRS1973

Structure of molybdenum disulfide films sputtered on substrates at various temperatures

Molybdenum disulfide films 300 to 400 A thick were rf sputtered on aluminum and nickel surfaces at elevated, ambient, and liquid nitrogen temperatures. Electron transmission micrographs and electron diffraction patterns were taken to determine the structural growth. These transmission micrographs revealed that sputtered MoS2 films at ambient and elevated temperatures (320 and 150 C) formed an irregular network of ridges. The electron diffraction patterns of these films showed relatively sharp diffraction rings, indicating crystallinity. The transmission micrographs of sputtered films at liquid nitrogen temperatures revealed a continuous featureless film. The electron diffraction patterns showed broad, diffused rings indicating an amorphous film. The transmission micrographs of a post-annealed (425 C) MoS2 film sputtered at liquid-nitrogen temperature revealed the tendency for ridge formation. Electron diffraction patterns also showed increased sharpness of the diffraction rings. Friction tests showed that MoS2 films deposited at ambient and elevated temperatures exhibited good lubricating properties. The MoS2 films deposited at cryogenic temperatures had no lubricating characteristics.

Spalvins, T.↗
NASA NTRS1975

On the sputtering of binary compounds

A simple physical model is presented to describe some aspects of the sputtering of compound targets. In particular, expressions are developed for the partial sputtering yields for binary systems in terms of the elemental sputtering rates, the stoichiometric concentrations and surface binding energy. The partial yields depend non-linearly on the bulk target concentrations. Comparison of the theoretical predictions with the data on sputtering of PtSi, NiSi and Cu3Au indicates that the general features are well described.

Haff, P. K.↗
NASA NTRS1977

Microstructural and wear properties of sputtered carbides and silicides

Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling element bearing tests were performed with these sputtered films. Bearings sputtered with a duplex coating (0.1-micron-thick undercoating of Cr3Si2 and subsequently 0.6-micron coating of MoS2) produced marked improvement over straight MoS2 films.

Spalvins, T.↗