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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Disk-loaded RF waveguide matching techniques applied to silicon woodpile accelerator

Silicon woodpile photonic crystal provides a three-dimensional dielectric waveguide system for high-gradient laser driven acceleration. The woodpile waveguide is periodically loaded in the longitudinal direction; therefore simple cross-sectional mode profile matching is not sufficient to launch the accelerating mode appropriately and will result in significant scattering loss. Hinted by the common nature of longitudinal periodicity between disk-loaded waveguide and woodpile waveguide, several coupler design schemes developed for multi-cell RF cavity are implemented in the woodpile accelerator design. Among them there are the travelling-wave match method based on S-matrix, the periodic VSWR method, and the TE-to-TM coupling iris design. This paper presents design procedures and simulation results using these methods. According to simulations, nearly 100% power transmission between SOI and woodpile waveguides with a travelling-wave match is achieved with a specially designed mode-launching coupler. Constructed by silicon rods extruding into the defect waveguide, the coupling iris provides necessary transition from TE mode to TM accelerating mode, also with negligible coupling loss.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

Photonic crystal membrane reflectors by magnetic field-guided metal-assisted chemical etching

Metal-assisted chemical etching (MacEtch) is a simple etching method that uses metal as the catalyst for anisotropic etching of semiconductors. However, producing nano-structures using MacEtch from discrete metal patterns, in contrast to interconnected ones, has been challenging because of the difficulties in keeping the discrete metal features in close contact with the semiconductor. We report the use of magnetic field-guided MacEtch (h-MacEtch) to fabricate periodic nanohole arrays in silicon-on-insulator (SOI) wafers for high reflectance photonic crystal membrane reflectors. This study demonstrates that h-MacEtch can be used in place of conventional dry etching to produce ordered nanohole arrays for photonic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment

The transport properties of Si nanowire (NW) structures fabricated on the basis of silicon on insulator (SOI) wafers were studied using noise spectroscopy before and after treatment with small doses of gamma radiation. The total resistance obtained from the I-V characteristics of Si NW structures scaled perfectly with length. Normalized flicker noise demonstrated 1/L{sup 2} dependence, which is a characteristic of dominant noise contribution from near-contact regions. The behavior changed to 1/L dependence after a small dose (1×10{sup 4} Gy) of gamma radiation treatment. Comparison of the random telegraph signal (RTS) noise parameters in the samples with small lengths before and after the treatment revealed a decrease in RTS amplitude and a shift to a lower frequency range after gamma irradiation. These results confirmed that the main changes in the samples were related to strain relaxation near-contact regions. In addition, such treatment resulted in a considerable decrease in the scattering data of device parameters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Carrier transport properties of the Group-IV ferromagnetic semiconductor Ge{sub 1-x}Fe{sub x} with and without boron doping

We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge{sub 1-x}Fe{sub x} films (x = 1.0 and 2.3%) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge{sub 1-x}Fe{sub x} films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (∼5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge{sub 1-x}Fe{sub x} films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to be negligibly small. By boron doping, we increased the hole concentration in Ge{sub 1-x}Fe{sub x} from ∼10{sup 18} cm{sup −3} to ∼10{sup 20} cm{sup −3} (x = 1.0%) and to ∼10{sup 19} cm{sup −3} (x = 2.3%), but no correlation was observed between the hole concentration and magnetic properties. This result presents a contrast to the hole-induced ferromagnetism in III-V ferromagnetic semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Narrow band wavelength selective filter using grating assisted single ring resonator

This paper illustrates a filter configuration which uses a single ring resonator of larger radius connected to a grating resonator at its drop port to achieve single wavelength selectivity and switching property with spectral features suitable for on-chip wavelength selection applications. The proposed configuration is expected to find applications in silicon photonics devices such as, on-chip external cavity lasers and multi analytic label-free biosensors. The grating resonator has been designed for a high Q-factor, high transmittivity, and minimum loss so that the wavelength selectivity of the device is improved. The proof-of-concept device has been demonstrated on a Silicon-on-Insulator (SOI) platform through electron beam lithography and Reactive Ion Etching (RIE) process. The transmission spectrum shows narrow band single wavelength selection and switching property with a high Free Spectral Range (FSR) ∼60 nm and side band rejection ratio >15 dB.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Fabrication and characterization of large arrays of mesoscopic gold rings on large-aspect-ratio cantilevers

We have fabricated large arrays of mesoscopic metal rings on ultrasensitive cantilevers. The arrays are defined by electron beam lithography and contain up to 10{sup 5} rings. The rings have a circumference of 1 μm, and are made of ultrapure (6N) Au that is deposited onto a silicon-on-insulator wafer without an adhesion layer. Subsequent processing of the SOI wafer results in each array being supported at the end of a free-standing cantilever. To accommodate the large arrays while maintaining a low spring constant, the cantilevers are nearly 1 mm in both lateral dimensions and 100 nm thick. The extreme aspect ratio of the cantilevers, the large array size, and the absence of a sticking layer are intended to enable measurements of the rings' average persistent current in the presence of relatively small magnetic fields. We describe the motivation for these measurements, the fabrication of the devices, and the characterization of the cantilevers' mechanical properties. We also discuss the devices' expected performance in measurements of .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Arbitrary-ratio power splitter based on nonlinear multimode interference coupler

We propose an ultra-compact multimode interference (MMI) power splitter based on nonlinear effects from simulations using nonlinear modal propagation analysis (NMPA) cooperation with finite difference Method (FDM) to access free choice of splitting ratio. Conventional multimode interference power splitter could only obtain a few discrete ratios. The power splitting ratio may be adjusted continuously while the input set power is varying by a tunable laser. In fact, using an ultra- compact MMI with a simple structure that is launched by a tunable nonlinear input fulfills the problem of arbitrary-ratio in integrated photonics circuits. Silicon on insulator (SOI) is used as the offered material due to the high contrast refractive index and Centro symmetric properties. The high-resolution images at the end of the multimode waveguide in the simulated power splitter have a high power balance, whereas access to a free choice of splitting ratio is not possible under the linear regime in the proposed length range except changes in the dimension for any ratio. The compact dimensions and ideal performance of the device are established according to optimized parameters. The proposed regime can be extended to the design of M×N arbitrary power splitters ratio for programmable logic devices in all optical digital signal processing. The results of this study indicate that nonlinear modal propagation analysis solves the miniaturization problem for all-optical devices based on MMI couplers to achieve multiple functions in a compact planar integrated circuit and also overcomes the limitations of previously proposed methods for nonlinear MMI.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Analytical theory of the space-charge region of lateral p-n junctions in nanofilms

There is growing interest in fabricating conventional semiconductor devices in a nanofilm which could be a 3D material with one reduced dimension (e.g., silicon-on-insulator (SOI) film), or single/multiple layers of a 2D material (e.g., MoS{sub 2}), or a two dimensional electron gas/two dimensional hole gas (2DEG/2DHG) layer. Lateral p-n junctions are essential parts of these devices. The space-charge region electrostatics in these nanofilm junctions is strongly affected by the surrounding field, unlike in bulk junctions. Current device physics of nanofilms lacks a simple analytical theory of this 2D electrostatics of lateral p-n junctions. We present such a theory taking into account the film's thickness, permittivity, doping, interface charge, and possibly different ambient permittivities on film's either side. In analogy to the textbook theory of the 1D electrostatics of bulk p-n junctions, our theory yields simple formulas for the depletion width, the extent of space-charge tails beyond this width, and the screening length associated with the space-charge layer in nanofilm junctions; these formulas agree with numerical simulations and measurements. Our theory introduces an electrostatic thickness index to classify nanofilms into sheets, bulk and intermediate sized.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Introduction of performance boosters like Ge as channel material for the future of CMOS

High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumvent the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Electronic Transport in Hydrogen-Terminated Si(001) Nanomembranes

Charge carrier transport in thin hydrogen (H)-terminated Si(001) sheets is explored via a four-probe device fabricated on silicon-on-insulator (SOI) using the bulk host Si as a back gate. The method enables electrical measurements without the need to contact the sample surface proper. Furthermore, sheet conductance measurements as a function of back-gate voltage demonstrate the presence of acceptor- and donorlike surface states. These states are distributed throughout the gap and can be removed or transformed with low-temperature annealing. The density of donorlike states is just under 10 12 cm -2 eV -1 and 3 times higher than that of the acceptorlike states. We discuss the possible origins of these states. The conductance through the surface layer is too small to measure.

2-dimensional systems↗
DOE OSTI2021

Opposite current-induced spin polarizations in bulk-metallic Bi 2 Se 3 and bulk-insulating Bi 2 Te 2 Se topological insulator thin flakes

One of the most fundamental and exotic properties of three-dimensional (3D) topological insulators (TIs) is spin-momentum locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba-type spin-orbit interaction (SOI) and bulk-conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current-induced spin polarization (CISP) difficult. Here, we directly compared the CISP between bulk-insulating Bi 2 Te 2 Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk-insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity. However, compared to BTS221, an opposite CISP is observed in the bulk-metallic Bi2Se3, consistent with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk intrinsic spin Hall Effect (SHE). If one assumes a representative occupation of the Rashba band of 3×10 13 cm –2 in Bi 2 Se 3 with a relevant relaxation time of 100 fs, the contribution to the CISP could be more dominated by the bulk intrinsic SHE. Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Interfacial phonon scattering and transmission loss in > 1 µm thick silicon-on-insulator thin films

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. Here, to better understand the interfacial scattering of phonons and to test the validity of Ziman's theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1–10 μm and a temperature range of 100–300 K. The Si/SiO 2 interface roughness was determined to be 0.11±0.04nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. Finally, we derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A Low-Power and In Situ Annealing Mitigation Technique for Fast Neutrons Irradiation of Integrated Temperature Sensing Diodes

High doses of fast neutrons is detrimental to the performance of most common solid-state devices such as diodes and transistors. The ionizing effect is observed in particular for diodes used as simple integrated temperature sensors, or thermo-diodes, when their junction voltage is measured at constant current bias. In this work, we present a low-power and in situ mitigation technique based on Silicon-on-Insulator (SOI) micro-hot-plates to recover thermo-diodes. The basic operating principle consists in annealing the temperature-sensitive diodes integrated on the membrane during or after their irradiation in order to restore similar sensing characteristics over time. We measured thermo-diodes integrated to micro-hot-plates during their irradiation by fast neutrons (23 MeV peak) with total doses about 2.97±0.08 kGy. The membrane annealing is taking place at 450 deg. C using 40 mW of electrical power. Thanks to the annealing, the diode keeps a total measurement error below 0.5 deg. C. In this harsh radiation environment and beside the good tolerance of the thermo-diodes and the membrane materials to the total ionizing dose, the thermo-diode located on the heating membrane keeps a constant sensitivity. The demonstrated resistance of micro-hot-plates and the integrated thermo-diodes to fast neutron radiations can extend their use in nuclear plants and for radiation detectors. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

2-D MEMS Scanner for Handheld Multispectral Dual-Axis Confocal Microscopes

We describe a 2-D microelectromechanical systems (MEMS) scanner for a handheld multispectral confocal microscope for early detection and diagnosis of cervical cancer. This paper is an expansion of work originally reported in the Proceedings of IEEE International Conference on Optical MEMS and Nanophotonics 2012. The MEMS scanner and fabrication process has been designed to improve performance for the dual-axis confocal microscopy architecture. Dual-axis confocal microscopy achieves comparable transverse and depth resolution to high numerical aperture (NA) single-axis confocal microscopy but achieves longer working distance by utilizing low-NA optics. The MEMS scanner has an inner gimbal design with torsional flexures separated from the reflectors to reduce light loss and oxide-free outer axis torsional flexures by utilizing poly vial for electrical access to the inner gimbal electrodes. The devices are large-scale batch fabricated using a double layer silicon-on-insulator (SOI) process and predice postreleasing of dies. The scanner has electrostatic optical deflection angles of 2 degrees for the single-sided inner axis at 75 V and +/- 3 degrees for the outer axis at 120 V. The device has resonance frequencies of similar to 2.48 kHz and similar to 348 z for the inner and outer axis torsional modes, respectively. Reflectance and fluorescence images with 650 mu m x 800 mu m field of view are demonstrated at 15 frames/s. The transverse (axial) resolutions are 4.78 mu m (6.2 mu m), 5.77 mu m (6.2 mu m), and 7.45 mu m (5.6 Am) for wavelengths of 561, 662, and 781 nm, respectively.

cervical cancer↗
DOE OSTI2020

Micromachined Piezoresistive-sensed Diaphragms for Infrasonic Monitoring

Micromachined, piezoresistive-sensed diaphragms are designed and fabricated specifically for infrasound sensing applications. Relatively large diaphragms, up to 6 mm × 6 mm, are fabricated to meet the high sensitivity requirements of infrasonic monitoring. A double-stack SOI wafer process is used, resulting in a streamlined two-mask process without the need for doping or ion-implantation. Pressure-sensitivities of diaphragms are studied using a custom static calibration set-up. Here, the piezoresistance of longitudinal and transverse resistors are studied over a large pressure range of ±5,500 Pa so that the linear and nonlinear response regions of diaphragms are observed. Measurements are compared against a nonlinear finite element simulation—shown to accurately predict the sensor’s behavior over a large response range.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

A 0.2–2 GHz Time-Interleaved Multistage Switched-Capacitor Delay Element Achieving 2.55–448.6 ns Programmable Delay Range and 330 ns/mm 2 Area Efficiency

Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched-capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. Further, the delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm 2 area efficiency. Through the proposed approach, the device shows minimal delay change across a -40 °C to 85 °C temperature range and < 0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2 .

42 ENGINEERING↗
DOE OSTI2022

Mid-Infrared Nonlinear Frequency Conversion Using Monolithic Barium Titanate on Silicon-on-Insulator

In this work, efficient nonlinear frequency conversion in the mid-infrared (mid-IR) region was demonstrated by a barium titanate (BTO) on a silicon-on-insulator (SOI) substrate. The BTO thin film was epitaxially grown by pulsed-laser deposition (PLD). The tensorial second order optical nonlinearity and the ferroelectric domain property of the BTO were characterized by the polarimetric mid-IR second harmonic generation (SHG) measurements. Azimuthal-dependent polarized SHG was modeled at different combinations of the nonlinear coefficient $d_{ij}$ and the domain fraction factor $ΔD^Y/ΔD^X$. Strong SHG intensity was experimentally observed over a broad spectrum at λ = 3.1 μm - 3.7 μm. A characteristic linear dependence between the SHG signal and the square of the pumping laser intensity was observed. The monolithic integration between the epitaxial BTO and the Si provides a compact platform for efficient on-chip light generation and quantum photonic technologies.

25 ENERGY STORAGE↗