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Si is beta Sn structured and crystallizes in the tetragonal I4_1/amd space group. The structure is three-dimensional. Si is bonded in a 6-coordinate geometry to six equivalent Si atoms. There are four shorter (2.50 Å) and two longer (2.65 Å) Si–Si bond lengths.
Si is Theoretical Carbon Structure structured and crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. Si is bonded to four equivalent Si atoms to form a mixture of edge and corner-sharing SiSi4 tetrahedra. There are two shorter (2.36 Å) and two longer (2.39 Å) Si–Si bond lengths.
Si is Tungsten structured and crystallizes in the cubic Im-3m space group. The structure is three-dimensional. Si is bonded in a body-centered cubic geometry to eight equivalent Si atoms. All Si–Si bond lengths are 2.67 Å.
Si crystallizes in the cubic Im-3m space group. The structure is three-dimensional. Si is bonded to four equivalent Si atoms to form a mixture of distorted edge and corner-sharing SiSi4 tetrahedra. All Si–Si bond lengths are 2.38 Å.
Si crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. Si is bonded to eight equivalent Si atoms to form a mixture of distorted edge, corner, and face-sharing SiSi8 hexagonal bipyramids. There are a spread of Si–Si bond distances ranging from 2.52–2.65 Å.
Si is Protactinium structured and crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. Si is bonded in a distorted q6 geometry to ten equivalent Si atoms. There are two shorter (2.58 Å) and eight longer (2.70 Å) Si–Si bond lengths.
Orientation‐patterned (OP) III–V semiconductors—used as quasi‐phase‐matched crystals for nonlinear optics applications—are typically epitaxially grown on expensive III–V substrates using a complex process requiring three separate epitaxy steps. In this work, a method is demonstrated for growing orientation‐patterned III–V crystals on Si substrates through V‐groove nanopatterning and a single epitaxial growth. V‐groove Si allows for suppression of random antiphase domain formation that is typical of III–V growth on (001)‐oriented Si through the use of (111)‐faceted trenches patterned on (001)‐oriented Si substrates. By alternating the directions of the V‐groove trenches between [110] and [10], antiphase boundaries can be selectively induced at the boundaries between the two directions of trenches due to the difference in symmetry between the III–V material and Si. This approach allows for a greatly simplified process for growing OP‐III‐Vs and more broadly is a new, robust approach for precisely patterning antiphase boundaries of arbitrary shape and length scales down to 50 nm.
The reaction of boron trichloride with the H and Cl-terminated Si(100) surfaces was investigated to understand the interaction of this molecule with the surface for designing wet-chemistry based silicon surface doping processes using a carbon- and oxygen-free precursor. The process was followed with X-ray photoelectron spectroscopy (XPS). Within the reaction conditions investigated, the reaction is highly effective on Cl-Si(100) for temperatures below 70°C, at which point both surfaces react with BCl$_3$. The XPS investigation followed the formation of a B 1s peak at 193.5 eV corresponding to (B-O)$_x$ species. Even the briefest exposure to ambient conditions lead to hydroxylation of surface borochloride species. However, the Si 2p signature at 102 eV allowed for a confirmation of the formation of a direct Si-B bond. Density functional theory was utilized to supplement the analysis and identify possible major surface species resulting from these reactions. This work provides a new pathway to obtain a functionalized silicon surface with a direct Si-B bond that can potentially be exploited as a means of selective, ultra-shallow, and supersaturated doping.
High backlighter brightness is important to maximize the number of detected photons in radiography experiments and to minimize the background while backlighting high-energy density plasmas with strong self-emission. Here, several different configurations were tested to improve the brightness of the Si He-α x-ray line emission at a photon energy of 1865 eV from high-energy (>1 kJ), short-pulse (~20-ps), laser-driven backlighter targets. The emission from low-density SiO 2 foam targets, the effects of a laser prepulse, and Si targets with a CH “shield” that form a small cavity were compared to solid-density, flat Si targets. The CH “shield” targets showed the best performance with a >5× improvement in time integrated emission and an x-ray pulse duration of ~25 ps with no measurable spectral shift of the Si He-α emission line. A conversion efficiency from laser light into Si He-α photons of the order of 1 × 10 –5 was inferred from the data.
Uranium silicides are considered for advanced technology reactor fuels due to their enhanced thermal conductivity and high uranium density (U 3 Si and U 3 Si 2 ) compared to traditional UO 2 . Susceptibility to oxidation and wash out, in the event of a cladding breech, could limit the potential for deployment of silicides as accident tolerant fuels. Mitigating the water reaction for U 3 Si 2 could enable its use as an accident tolerant, high uranium density fuel or as a composite fuel constituent. Reported here is the impact of alloying additions of Al, Cr and Y on the high temperature, steam oxidation response of U 3 Si 2 . In addition to the thermogravimetric response, as melted microstructures, phase compositions and post oxidation analysis are also presented. Here, the investigation shows steam oxidation dynamics are altered, from non-alloyed U 3 Si 2 , under thermally ramped conditions. However, additional alloy development of these fuel forms is necessary for further consideration as candidate accident tolerant fuels in water-cooled reactor designs.
In this work, we report an innovative approach synergizing multiple effects of microstructure control, oxide protection and phase transformation-induced mechanically toughening to develop advanced U 3 Si 2 fuels with state-of-the-art materials properties. 3Y-TZP (3 mol% yttria doped stabilized tetragonal zirconia) additives are incorporated and uniformly distributed into the SPS-densified U 3 Si 2 fuel matrix, enhancing materials fracture toughness up to 4.04 MPa m 1/2 . The 3Y-TZP incorporated U 3 Si 2 composite pellets show significantly improved onset temperature of oxidation above 560 °C, which can be further improved to 617 °C with 3 vol% addition by post-sintering thermal annealing. We report the development of mechanically tough and oxidation-resistant U 3 Si 2 with minimal additive represents a major step forward towards realizing the potential of high density U 3 Si 2 as the leading fuel concept to increase accidence tolerance of nuclear energy systems.
U 3 Si 2 is an advanced fuel candidate due to its relatively high fissile density and attractive thermal properties. Compared to standard UO 2 fuel, there are significant data gaps for the thermophysical and thermomechanical properties of U 3 Si 2 . Point defect concentrations and mobilities under irradiation govern a number of important fuel performance properties, such as creep and fission gas release. In this work, we utilized density functional theory (DFT) data to inform a cluster dynamics framework to predict point defect concentrations in U 3 Si 2 under irradiation. Molecular dynamics (MD) simulations were used to examine the contribution of atomic mixing during ballistic cascades to diffusion, as well as the diffusivity of U and Si at grain boundaries. These atomic scale models for diffusivity were then used to inform a creep model based on bulk (Nabarro-Herring) and grain boundary (Coble) diffusional creep, and climb-limited dislocation creep. The model compares well against available experimental data and has been implemented in the BISON fuel performance code. Finally, a demonstration case using simple power profiles has been carried out, showing that negligible creep occurs due to the low temperatures experienced by U 3 Si 2 in-reactor, a consequence of its high thermal conductivity.
Research and development of high uranium density fuels supports the on-going effort to enhance reactor technology, safety, performance, and economics. Among high uranium density fuels, U 3 Si 2 is a favored fuel candidate due to its higher uranium density and improved thermal conductivity when compared to traditional UO 2 . While U 3 Si 2 demonstrates an improved fuel economy, it suffers from rapid degradation when exposed to water at T > 300°C. In order for U 3 Si 2 to be implemented in water cooled reactors, the water reaction must be understood and mitigated. Reported here is the performance of Zr alloying additions to U 3 Si 2 exposed to high temperature steam oxidation environments. Here, the investigation shows that homogenization heat treatment contributes to a delayed onset of oxidation and an improved homogeneity throughout the arc-melt fabricated alloyed compositions. Of the pre- and post-annealed samples, the post-annealed 7 vol% Zr addition exhibited the highest onset temperature of oxidation. A preliminary computational investigation to complement the experimental analysis assesses the solubility of Zr in U 3 Si 2 and its incorporation in the crystal lattice.
Here, in this study, we investigate the thermal conductivity of U 3 Si 2 amorphized by ion irradiation using 84 MeV 136 Xe ions at 190 °C. The suspended-bridge method was utilized to measure the thermal conductivity, allowing for a detailed analysis of the specimen while minimizing interference from other crystalline phases. Our results indicate that the thermal conductivity of amorphous U 3 Si 2 is significantly lower than that of unirradiated crystalline U 3 Si 2 . These findings are consistent with recent studies on in-pile-irradiated U 3 Si 2 samples that consider the effects of U 3 Si 2 amorphization, fission gas bubbles, and other impurities.
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb δ-layers. We show that, in spite of the known challenges in producing highly confined Sb δ-layers, sufficient confinement is created such that the lowest conduction band states (Γ states, studied in depth in other silicon δ-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb δ-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the k ∥ plane. The observed Γ state extends ∼1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor δ-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.
Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >1000 °C) and promote surface reconstruction toward atomically clean, flat, and ordered Si(100)-2 × 1. Here, in this study, we compare the aqueous and vapor phase cleaning of Si and Si/SiGe surfaces to prepare APAM-ready and epitaxy-ready surfaces at lower temperatures. Angle resolved X-ray photoelectron spectroscopy (ARXPS) and Fourier transform infrared (FTIR) spectroscopy indicate that vapor hydrogen fluoride (VHF) cleans dramatically reduce carbon surface contamination and allow the chemically prepared surface to reconstruct at lower temperatures, 600 °C for Si and 580 °C for a Si/Si 0.7 Ge 0.3 heterostructure, into an ordered atomic terrace structure indicated by scanning tunneling microscopy (STM). After thermal treatment and vacuum hydrogen termination, we demonstrate STM hydrogen desorption lithography (HDL) on VHF-treated Si samples, creating reactive zones that enable area-selective chemistry by using a thermal budget similar to CMOS process flows. We anticipate that these results will establish new pathways to integrate APAM with Si foundry processing.
Magnetic fluctuations is the leading candidate for pairing in cuprate, iron-based, and heavy fermion superconductors. This view is challenged by the recent discovery of nodeless superconductivity in CeCu 2 Si 2 , and calls for a detailed understanding of the corresponding magnetic fluctuations. Here, we mapped out the magnetic excitations in superconducting (S-type) CeCu 2 Si 2 using inelastic neutron scattering, finding a strongly asymmetric dispersion for E ≲ 1.5 meV, which at higher energies evolves into broad columnar magnetic excitations that extend to E ≳ 5 meV. While low-energy magnetic excitations exhibit marked three-dimensional characteristics, the high-energy magnetic excitations in CeCu 2 Si 2 are almost two-dimensional, reminiscent of paramagnons found in cuprate and iron-based superconductors. By comparing our experimental findings with calculations in the random-phase approximation, we find that the magnetic excitations in CeCu 2 Si 2 arise from quasiparticles associated with its heavy electron band, which are also responsible for superconductivity. Our results provide a basis for understanding magnetism and superconductivity in CeCu 2 Si 2 , and demonstrate the utility of neutron scattering in probing band renormalization in heavy fermion metals.
The solid–electrolyte interphase (SEI), a layer formed on the electrode surface, is essential for electrochemical reactions in batteries and critically governs the battery stability. Active materials, especially those with extremely high energy density, such as silicon (Si), often inevitably undergo a large volume swing upon ion insertion and extraction, raising a critical question as to how the SEI interactively responds to and evolves with the material and consequently controls the cycling stability of the battery. Here, by integrating sensitive elemental tomography, an advanced algorithm and cryogenic scanning transmission electron microscopy, we unveil, in three dimensions, a correlated structural and chemical evolution of Si and SEI. Furthermore, corroborated with a chemomechanical model, we demonstrate progressive electrolyte permeation and SEI growth along the percolation channel of the nanovoids due to vacancy injection and condensation during the delithiation process. Consequently, the Si–SEI spatial configuration evolves from the classic ‘core–shell’ structure in the first few cycles to a ‘plum-pudding’ structure following extended cycling, featuring the engulfing of Si domains by the SEI, which leads to the disruption of electron conduction pathways and formation of dead Si, contributing to capacity loss. The spatially coupled interactive evolution model of SEI and active materials, in principle, applies to a broad class of high-capacity electrode materials, leading to a critical insight for remedying the fading of high-capacity electrodes.