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Redesigning Photoelectrodes So They Can Work in the Light and Dark
Unassisted photoelectrochemical (PEC) reactions, such as H2 generation and CO2 reduction, are limited by the durability of the immersed photoelectrode. Small band gap semiconductors, like Si, are efficient at utilizing a large portion of the solar spectrum but are not stable in aqueous environments without protection. While great strides have been made to improve stability under constant illumination, dark stability remains relatively unexamined and presents great challenges for durable PEC systems. Cathodic protection is an established electrochemical method for preventing metal electrode degradation in harsh conditions. Similar protection strategies cannot be applied to traditional two-terminal (2T) semiconductor photoelectrodes because of their inability to pass reverse bias current in the dark. New, three-terminal (3T) photovoltaic (PV) architectures introduce additional degrees of freedom in traditional 2T PEC operations by adding an extra electrical contact for an alternative low resistance path to protect the photoelectrode and drive electrochemical reactions, even in the dark. Here, we investigate bare 3T Si PV devices operating as photocathodes in aqueous methyl viologen electrolyte. The 3T architecture provides additional capabilities to PEC systems such as cathodic protection, the ability to drive reactions with or without illumination, and in situ switching between different operational modes. We show that 3T-based Si photocathodes maintain PEC activity after several hours of light/dark cycling. This work helps advance PEC use in real-world conditions where variable illumination must be considered.
Vanadium oxide coatings to self-regulate current sharing in high-temperature superconducting cables and magnets
High-temperature superconductors such as REBa 2 Cu 3 O 7-δ (REBCO, RE = rare earth) enable high-current cables and high-field magnets. By removing the turn-to-turn insulation in a magnet application, recent experiments demonstrated that REBCO magnets can self-protect against catastrophic damage during a superconducting-to-normal transition (quench), i.e., when the stored magnetic energy rapidly converts to heat. The current can bypass the hot spot during a quench, thereby reducing the localized heat dissipation. The removal of the insulation between turns, however, leads to excessive eddy currents during current ramping, thereby forcing a much-prolonged magnet charging time. To address this issue, we investigate vanadium oxide (VO x ) coatings as a temperature-dependent self-switching medium that automatically manages current sharing. VO x coatings (with 1.70 ≤ × ≤ to 2.07) were deposited by reactive cathodic arc deposition, initially on insulating glass to determine the electrical properties, and later on commercial REBCO tapes. The coatings are x-ray amorphous but with a short-range crystalline ordering according to Raman spectrometry. The resistivity of VO x decreased by at least three orders of magnitude when the temperature increased from 80 to 300 K. The coating process is compatible with commercial REBCO tapes as evidenced by the negligible change in the critical current caused by the coating process. Here, the results from current sharing experiments and circuit analysis suggest that the VO x coating can effectively self-regulate current sharing in REBCO magnets, suppress excessive eddy currents, and enable self-protection during quenches.
Progress toward picosecond on-chip magnetic memory
Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.
Controlling Tautomerization in Pyridine-Fused Phosphorus-Nitrogen Heterocycles
Inclusion of a second nitrogen atom in the aromatic core of phosphorus-nitrogen (PN) heterocycles results in unexpected tautomerization to a nonaromatic form. This tautomerization, initially observed in the solid state through X-ray crystallography, is also explained by computational analysis. We prepared an electron deficient analogue (2 e) with a fluorine on the pyridine ring and showed that the weakly basic pyridine resisted tautomerization, providing key insights to why the transformation occurs. To study the difference in solution vs. solid-state heterocycles, alkylated analogues that lock in the quinoidal tautomer were synthesized and their different 1 H NMR and UV/Vis spectra studied. Ultimately, we determined that all heterocycles are the aromatic tautomer in solution and all but 2 e switch to the quinoidal tautomer in the solid state. Better understanding of this transformation and under what circumstances it occurs suggest future use in a switchable on/off hydrogen-bond-directed receptor that can be tuned for complementary hydrogen bonding.
Strain-switchable field-induced superconductivity
Field-induced superconductivity is a rare phenomenon where an applied magnetic field enhances or induces superconductivity. Here, we use applied stress as a control switch between a field-tunable superconducting state and a robust non–field-tunable state. This marks the first demonstration of a strain-tunable superconducting spin valve with infinite magnetoresistance. We combine tunable uniaxial stress and applied magnetic field on the ferromagnetic superconductor Eu(Fe 0.88 Co 0.12 ) 2 As 2 to shift the field-induced zero-resistance temperature between 4 K and a record-high value of 10 K. We use x-ray diffraction and spectroscopy measurements under stress and field to reveal that strain tuning of the nematic order and field tuning of the ferromagnetism act as independent control parameters of the superconductivity. Combining comprehensive measurements with DFT calculations, we propose that field-induced superconductivity arises from a novel mechanism, namely, the uniquely dominant effect of the Eu dipolar field when the exchange field splitting is nearly zero.
Unified Universal Control and Coordination of Inverter-Based Resources, and Validation for a PV + Battery Hybrid Plant
As renewable energy deployment grows, hybrid power plants (HPPs) combining photovoltaic (PV) and battery systems must evolve to offer both energy and grid stability services. These systems typically include a mix of grid-following (GFL) and grid-forming (GFM) inverters, presenting unique coordination and control challenges. This Department of Energy–funded project developed and validated a Unified Universal Control and Coordination (UUCC) framework for such PV + battery hybrid plants, enabling seamless and stable operation, including ultrafast black start, autonomous synchronization, and robust frequency and voltage regulation, under different grid conditions. The project significantly advanced the understanding of inverter-based resource (IBR) control by developing and validating three complementary system-level approaches for hybrid GFL/GFM operation: 1. A combined Virtual Resistance (VR)-based GFL and Virtual Oscillator Control (VOC)-based GFM method, where each inverter type is governed by a specialized control strategy. Together, these achieve stable, fast-response coordination, eliminating inrush current and enabling smooth black start and grid synchronization across a wide range of grid strengths. 2. A Deadbeat-based UUCC strategy, which uses discrete-time, switching-cycle-level control for both GFL and GFM inverters. This approach replaces traditional PI/PLL control with a control parameter-free, high-bandwidth framework that supports stable LVRT and instantaneous synchronization under all conditions. 3. A benchmark comparison with Siemens’ commercial GFM microgrid controller, which provided a fast baseline platform. The commercial approach decoupled v & f control was implemented on a commercial microgrid controller.The baseline commercial benchmark helped highlight superior transient response and black start performance offered by the deadbeat and VOC approaches. These technical contributions offer substantial improvements over conventional inverter control schemes, which often rely on slow phase-locked loop (PLL)-based synchronization, require careful control parameters tuning, and prone to unstable in weak grids with GFL inverters and in stiff grid with GFM inverters therefore challenging for hybrid GFL+GFM under all grid conditions. The deadbeat-based UUCC framework enables simpler, faster, and more robust operation of hybrid IBR systems using wide-bandgap (WBG) devices such as SiC power semiconductors. The rapid expansion of hybrid distributed energy resources (DERs), including residential and commercial PV-BESS installations such as Tesla Powerwall, PV with vehicle-to-grid (V2G) capability, and other integrated configurations, presents complex operational challenges for medium-voltage radial distribution feeders. These networks are subject to frequent disturbances such as faults, switching operations, rapid reclosing sequences, and feeder reconfigurations, all of which introduce dynamic stress on IBRs. In addition, planned feeder segmentation and deliberate islanding for resilience will require DERs that can autonomously perform blackstart, establish voltage and frequency references, and resynchronize with the main grid. The advanced deadbeat-based UUCC control and blackstart functionalities developed in this project directly address these requirements, enabling decentralized and autonomous operation of inverter-dominated DERs in distribution systems under a wide range of fault and reconfiguration scenarios. From a public benefit perspective, these innovations enable more reliable and cost-effective integration of renewable energy into distribution networks. The ability to autonomously black start and stabilize grids under varying grid conditions support accelerates recovery from outages and support decentralized resilient energy systems. By reducing system complexity and improving performance, this project lays critical groundwork for future inverter-dominated power grids that are clean, reliable, and accessible to all.
2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness
We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga 2 O 3 . The device features 1.8 μm wide, 2×10 17 cm -3 doped n-Ga 2 O 3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga 2 O 3 , the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (R ON,SP ) of 0.7 mΩ•cm 2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The R ON,SP ~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.
Unified conductor to lower the resistance between a planar transformer and one or more inductors
An apparatus is provided including a transformer including a first printed circuit board having one or more conducting layers, the one or more conducting layers forming, at least in part, a transformer coil; at least one inductor; and at least one continuous piece of conducting material external to the printed circuit board, where the at least one continuous piece of conducting material forms a connection between the transformer and the at least one inductor. A method is also provided for assembling a switched-mode power supply.
Model Reduction for Inverters With Current Limiting and Dispatchable Virtual Oscillator Control
Not provided.
Percolation and nanosecond fluctuators in V 2 O 3 films within the metal–insulator transition
Vanadium sesquioxide (V 2 O 3 ) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolative transition takes place over a finite temperature range of phase coexistence. We study the fluctuating dynamics of this percolative MIT by measuring voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). Noise intensity quadratic in bias is observed in the MIT region, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise resembles flicker-type 1/f β noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity also quadratic in the bias current allows the identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump–probe studies of the transition. We find quantitative consistency with a model for fluctuations in the percolative fraction. The thermodynamics of the MIT suggests that dominant fluctuations are ones that alter small volumes affecting the connectivity of domain boundaries. This noise serves as a sensitive and nonperturbative probe for the dynamics of switching phenomena in this system.
Topological Surface and Bulk States in Dirac Semimetal Alpha-Sn Thin Films
Supported by this DOE grant, we made significant advancements in the study and application of topological surface states (TSS) in topological Dirac semimetal (TDS) α-Sn thin films. Our key findings include: (1) the successful growth of TDS α-Sn thin films via sputtering, an industry-friendly technique, on Si and InSb substrates, marking a breakthrough over previous molecular beam epitaxy methods, (2) the demonstration of enhanced damping in adjacent NiFe thin films due to the TSS of α-Sn, (3) the first observation of a strong bilinear magneto-electric resistance (BMER) effect in TDS materials at room temperature, with responses surpassing previous results, (4) the identification of quantum oscillations in α-Sn thin films associated with the TSS, revealing critical quantum transport characteristics such as Berry phase and quantum mobility, (5) the first experimental observation of negative magnetoresistance in α-Sn, and (6) the demonstration of spinorbit torque-driven, field-free magnetization switching in an α-Sn/Ag/CoFeB trilayer, achieving efficiency levels higher than conventional heavy-metal-based structures, highlighting the essential role of TSS in enabling the switching process.
Revealing the Defect‐Driven Ferroelectric Mechanisms of Aluminum Nitride
Wurtzite III-nitride compounds are CMOS-compatible with widespread industrial interest to exercise ferroelectricity, despite their polar structure being highly resistant to polarization reversal. Here, we induce and tune ferroelectric properties in w-AlN via direct-write ion-beam processing, using nanoscale patterned defect engineering as a post-growth alternative to conventional cation substitution. Nanometric piezoresponse spectroscopy of the focused He + beam patterned defect concentrations in ferroelectric Al 0.92 B 0.08 N measures a localized 10x enhancement in effective piezoresponse and 40% reduction in switching barrier. The irradiation-induced point defects convert piezoelectric AlN into a ferroelectric system with site-saturated nucleation and raise the dielectric susceptibility, switched polarization, and effective piezoelectric coefficient. Enhanced defect-lattice interactions in AlN increase carrier conduction and phonon scattering loss but preserve long-range crystallinity. Here, based on atomistic analysis of nudged elastic band density functional theory calculations and reactive force field simulations, both nitrogen vacancies and defect complexes disrupt bond ordering, facilitating a line-by-line low-barrier switching of pristine AlN.
Selective atomic sieving across metal/oxide interface for super-oxidation resistance
Abstract Surface passivation, a desirable natural consequence during initial oxidation of alloys, is the foundation for functioning of corrosion and oxidation resistant alloys ranging from industrial stainless steel to kitchen utensils. This initial oxidation has been long perceived to vary with crystal facet, however, the underlying mechanism remains elusive. Here, using in situ environmental transmission electron microscopy, we gain atomic details on crystal facet dependent initial oxidation behavior in a model Ni-5Cr alloy. We find the (001) surface shows higher initial oxidation resistance as compared to the (111) surface. We reveal the crystal facet dependent oxidation is related to an interfacial atomic sieving effect, wherein the oxide/metal interface selectively promotes diffusion of certain atomic species. Density functional theory calculations rationalize the oxygen diffusion across Ni(111)/NiO(111) interface, as contrasted with Ni(001)/NiO(111), is enhanced. We unveil that crystal facet with initial fast oxidation rate could conversely switch to a slow steady state oxidation.
Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. Furthermore, this device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.
Utilizing the unique charge extraction properties of antimony tin oxide nanoparticles for efficient and stable organic photovoltaics
Simultaneously enhancing device performance and longevity, as well as balancing the requirements on cost, scalability, and simplification of processing, is the goal of interface engineering of organic solar cells (OSCs). In our work, we strategically introduce antimony (Sb 3+ ) cations into an efficient and generic n-type SnO 2 nanoparticles (NPs) host during the scalable flame spray pyrolysis synthesis. Accordingly, a significant switch of conduction property from an n-type character to a p-type character is observed, with a corresponding shift in the work function (WF) from 4.01 ± 0.02 eV for pristine SnO 2 NPs to 5.28 ± 0.02 eV for SnO 2 NPs with 20 mol. % Sb content (ATO). Both pristine SnO 2 and ATO NPs with fine-tuned optoelectronic properties exhibit remarkable charge carrier extraction properties, excellent UV resistance and photo-stability being compatible with various state-of-the-art OSCs systems. The reliable and scalable pristine SnO 2 and ATO NPs processed by doctor-blading in air demand no complex post-treatment. Our work offers a simple but unique approach to accelerate the development of advanced interfacial materials, which could circumvent the major existing interfacial problems in solution-processed OSCs.
Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV
Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.
Increasing the Number of Installed Residential Heat Pump Water Heaters in the USA Through Improved Technology and Utility Programs
Heat pump water heaters (HPWHs) offer an efficient alternative to electric resistance water heaters, but they suffer from limited market penetration. This paper reviews the current state of HPWHs in the USA, focusing on technology developments and programs to increase adoption. What technological improvements are needed to make HPWHs a good fit in more homes? Additionally, what are the best ways of promoting HPWHs to consumers? Improved communication and controls will allow HPWHs to provide demand response and follow dynamic utility rates. To enable fuel-switching, HPWHs are being developed that only need a standard 120V outlet. Split HPWHs can alleviate the cooling and noise that limit the use of HPWHs in small homes, multifamily buildings, and cold climates. Additionally, new utility programs aim to train installers and provide incentives to distributors to increase the number of HPWHs installed. Some utilities offer novel incentive programs that have led to increased customer uptake. Those advances, coupled with improved controls for load shifting and new products such as split HPWHs and HPWHs that can run on 120V power, may finally move the market forward.