Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Recombinant”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Carrier generation, recombination, trapping, and transport in semiconductors with position-dependent composition

The spatial variation of the chemical composition of a semiconductor modifies the ideal one-electron energy band model as well as the Shockley equations for carrier recombination and transport in two important ways. The random component of the spatial variation introduces localized states in the energy gap by perturbing the band states. The nonrandom component gives rise to the position dependences of the conduction and valence band edges or the electron affinity and the energy gap. This paper gives the modifications of the Shockley equations from these two effects as well as an example of the steady-state recombination rate from distributed gap states in junction solar cells

Sah, C.-T.↗
NASA NTRS1977

Effects of defect recombination centers on radiation damage in solar cells

Defect production in silicon is modeled on a computer by solving a large system of rate equations. The model includes the main, known defects that are stable at operating temperatures of solar cells in outer space; most of these defects are secondary and tertiary defects. The preliminary result shows that the presence of defect recombination centers for primary defects (i.e., vacancy and interstitial) can effectively reduce the production rates of those stable defects and, consequentially, improve the lifetime of solar cells operating in radiation environment. The characteristics of the defect recombination center required for better solar cell performance along with prospective candidates are discussed.

Cheng, L. J.↗
NASA NTRS1978

Recombination-generation currents in degenerate semiconductors

The classical Shockley-Read-Hall theory of free carrier recombination and generation via traps is extended to degenerate semiconductors. A concise and simple expression is found which avoids completely the concept of a Fermi level, a concept which is alien to nonequilibrium situations. Assumptions made in deriving the recombination generation current are carefully delineated and are found to be basically identical to those made in the original theory applicable to nondegenerate semiconductors.

Von Roos, O.↗
NASA NTRS1978

On dielectronic recombination and resonances in excitation cross sections

It is found that the contribution to the dielectronic recombination rate of stabilizing transitions of the outer electron is within the 30% accuracy of the Burgess rates calculated by neglecting this process even for Delta n = 0 transitions for astrophysically important ions. Autoionization to excited levels, ignored in the Burgess procedure and shown by Jacobs et al. (1977) to be important for some ions in the calculation of the dielectronic recombination rate, is discussed with reference to the resonance excitation of some astrophysically important X-ray lines. In particular, the contribution of resonances to the excitation of several lines in the helium and neon isosequences is estimated.

Raymond, J. C.↗
NASA NTRS1978

Measurement of dielectronic recombination rates for the iron ions Fe IX-XI

Iron is injected into a well-diagnosed theta-pinch plasma. The intensities of lines from various ionization stages are measured as functions of time and interpreted by means of a time-dependent corona ionization-recombination model. Effective coefficients for dielectronic recombination at electron densities of approximately 3 by 10 to the 16th power per cu cm are equal to or smaller than presently accepted theoretical values for low-density plasmas. Rate coefficients for ionization tend to be smaller than theoretical values.

Brooks, R. L.↗
NASA NTRS1979

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗
NASA NTRS1979

Recombination of NO/+/ in the mid-latitude trough and the polar ionization hole

The dissociative recombination of NO(+) with electrons is further examined using a sample of Atmosphere Explorer data from the midlatitude ionization trough. The electron temperature for this data sample covered a range of 2500 K, thus allowing an accurate determination of the temperature dependence of the rate coefficient. The results confirm earlier determinations which were made from a large data base, and the rate coefficient alpha is found to be inversely proportional to the electron temperature. The possibility of a neglected process in the NO(+) chemistry is investigated which, if it were included, might result in a smaller temperature dependence of alpha. Such a source would require a direct dependence on electron temperature. A possible candidate is associative recombination of energetic N(D-2) with O. The results confirm recent measurements which find that this process cannot be significant. The NO(+) chemistry is a very sensitive indicator of chemical equilibrium conditions. By using measurements of the relevant parameters made in the polar ionization hole it is found that horizontal drifts do not appear to be significant in this region.

Torr, M. R.↗
NASA NTRS1979

Dissociative recombination of N2/+/ in the ionosphere

N2(+) ion measurements are examined which were made with the Atmospheric Explorer-C satellite during a phase of solar activity in 1978 that was significantly higher than near the earlier minimum. It is found that the major source of N2(+) is photoionization, rather than charge exchange with O(+) (2D), and that the major loss process above 300 km is dissociative recombination with electrons. A data sample for which the electron temperature (T sub e) covered the range from 1000 to 3400 K is used to evaluate the rate constant, alpha, for the dissociative-recombination process. The results show good agreement with laboratory measurements given by the expression: alpha = 1.8 x 10 to the -7th (T sub e/300) to the -0.39th cu cm/sec.

Torr, M. R.↗
NASA NTRS1979

Outdiffusion of recombination centers from the substrate into LPE layers - GaAs

Experimental results are presented showing that outdiffusion of recombination centers from the GaAs substrate into the epitaxial layer takes place during growth. Such outdiffusion decreases the carrier lifetime in the epitaxial layer to much lower values than the radiative recombination limit. Furthermore, it introduces a lifetime gradient across the epitaxial layer which depends critically on the growth velocity and thermal treatment. High rates of growth (such as those attainable in electroepitaxy) and high cooling rates can minimize the adverse effects of normally available substrates on the epitaxial layers; however, good quality substrates are essential for the consistent growth of device quality layers.

Jastrzebski, L.↗
NASA NTRS1979

The OI/1S/ state - Its quenching by O2 and formation by the dissociative recombination of vibrationally excited O2/+/ ions

The rate coefficient for the quenching of metastable O(1S) atoms by O2 was measured as a function of temperature from 250 to 550 K. The resulting Arrhenius expression correlates well with previous laboratory work. It is suggested that the much larger value of the rate coefficient inferred from an analysis of artificial auroral experiment, Precede, may be explained by overestimation of the contribution of O(1S) production from O2(+) dissociative recombination. The possibility that O(1S) atoms are produced only by the dissociative recombination of vibrationally excited O2(+) ions is examined; such excited ions would not exist in the Precede experiment because of the rapid cooling of the ions by resonant charge transfer processes.

Zipf, E. C.↗
NASA NTRS1981

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

Neugroschel, A.↗
NASA NTRS1980

Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells

The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.

Li, S. S.↗
NASA NTRS1981

Electron-temperature dependence of dissociative recombination of electrons with CO/+/./CO/n-series ions

The dependence on electron temperature of the coefficients for electron recombination with molecular cluster ions of the carbon monoxide series, CO(+).(CO)n, is determined. A microwave discharge lasting approximately 0.1 msec was applied in 5-20 Torr neon containing a few tenths percent CO in an afterglow mass spectrometer apparatus, and the time histories of the various afterglow ions were measured. Expressions for the dependence of the recombination coefficients of the dimer and trimer ions CO(+).CO and CO(+).(CO)2 are obtained which are found to be significantly different from those previously obtained for hydronium and ammonium series polar cluster ions, but similar to those of simple diatomic ions.

Whitaker, M.↗
NASA NTRS1982

Viscous-shock-layer heating analysis for the shuttle windward-symmetry plane with surface finite catalytic recombination rates

The paper demonstrates the capability of a reacting, two-dimensional viscous-shock-layer solution using the equivalent axisymmetric body concept to predict heating rates on the shuttle windward centerline for a wide range of altitudes. Results indicate that the nonequilibrium effects persist through most of the STS-2 entry heating pulse down to an altitude of about 50 km. When results are compared to those of the inviscid flowfield plus boundary layer solution of Scott (1980), agreement is fair to poor for nonequilibrium calculations, although very good for equilibrium calculations. A parametric study to demonstrate the effect of uncertainties in oxygen surface recombination rate for RCG coated HRSI on heating, indicates favorable results when a wall recombination rate of 100 cm/sec is used in the temperature range 1400-900 K.

Shinn, J. L.↗
NASA NTRS1981

Surface recombination velocity measurement for silicon solar cells

For the design and fabrication of silicon solar cells approaching theoretical ultimate conversion efficiencies, surface recombination velocity plays a crucial role. A technique using a scanning electron microscope with pulsed electron beam has been developed for thy measurement of this important parameter for silicon surfaces. It is shown that the surface recombination velocity(s) increases by an order of magnitude when a freshly etched sample is left out for a few hours, presumably due to generation of surface states. A textured front surface field (FSF) cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem junction (TJ) cell with n+-p junction near the surface gives larger s value.

Daud, T.↗
NASA NTRS1983

Dielectronic recombination rates, ionization equilibrium, and radiative emission rates for Mn ions in low-density high-temperature plasmas

The analysis of optically-thin far-ultraviolet and X-ray emission lines of multiply-charged ions is one of the basic methods for determining the temperatures and densities of laboratory and astrophysical plasmas. In addition, the energy balance in these plasmas can be significantly influenced by the emission of radiation from relatively low concentrations of multiple-charged atomic ions. Because the populations of the excited levels are expected to depart substantially from their local thermodynamic equilibrium values a detailed treatment of the elementary collisional and radiative processes must be employed in order to predict the emission line intensities. In this investigation the authors present the results of calculations based on a corona equilibrium model in which a detailed evaluation is made of the dielectronic recombination rate coefficients. The ionization and autoionization following inner-shell electron excitation from each ground state are balanced by direct radiative and dielectronic recombination. The spectral line intensities emitted by the low-lying excited states, which are assumed to undergo spontaneous radiative decay in times that are short compared with the collision time, are evaluated in terms of the corona ionization equilibrium distributions of the ground states and their electron-impact excitation states.

Jacobs, V. L.↗
NASA NTRS1983

The dissociative recombination of O2(+) - The quantum yield of O(1S) and O(1D)

Data from the visible airglow experiment on the Atmosphere Explorer-E satellite have been used to determine the quantum yield of O(1S) and O(1D) from the dissociative recombination of O2(+). A range of values between 0.09 and 0.23 has been obtained for the quantum yield of O(1S). It is shown that the quantum yield of O(1S) depends on the ratio of electron density to atomic oxygen density. This suggests that the quantum yield of O(1S) may depend on the degree of vibrational excitation of the recombining O2(+). The quantum yield of O(1D) has been measured to be 1.23 + or - 0.42, with no dependence on the electron-oxygen ratio.

Abreu, V. J.↗
NASA NTRS1983

Termolecular ionic recombination at high ambient gas density

It is shown that the importance of diffusion relative to drift in ion-ion recombination is a decreasing function of the separation between the ions (contrary to a common supposition). Langevin's formula for the recombination coefficient is obtained very simply using a physical model which allows for both diffusion and drift.

Bates, D. R.↗