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Results for “Radiation effects on electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Microstructural evolution of compositionally complex solid-solution alloys under in-situ dual-beam irradiation

Here, this work attempts to link the microstructural evolution of single-phase compositionally complex alloy (CCA) compositions under dual-beam irradiation to their Mn-content via the stacking-fault energy (SFE) and vacancy migration energies. Two alloys, Cr 18 Fe 27 Mn 27 Ni 28 and Cr 15 Fe 35 Mn 15 Ni 35 , along with less compositionally complex pure Ni and Fe 56 Ni 44 binary were irradiated at 500 and 600 °C under dual-beam 1 MeV Kr 2+ and 16 keV He + heavy-ions up to 7 displacements per atom (dpa) with a He/dpa ratio of 0.75 %/dpa using in situ transmission electron microscopy (TEM). Due to the bubble-stabilizing effect of implanted He, bubbles were observed in all irradiations, and populations of faulted interstitial loops were characterized in Cr 18 Fe 27 Mn 27 Ni 28 and Cr 15 Fe 35 Mn 15 Ni 35 . A reduction in swelling was observed in the two CCAs compared to pure Ni and Fe 56 Ni 44 . Although swelling increased from 500 to 600 °C in Fe 56 Ni 44 , Cr 15 Fe 35 Mn 15 Ni 35 and Cr 18 Fe 27 Mn 27 Ni 28 both swelled slightly more at 500 °C. This was attributed to the difference in vacancy mobility, stronger pinning effect of vacancies on He, and the sink strength of faulted dislocation loops. Faulted interstitial loops nucleated with a higher number density and dislocation line density in Cr 15 Fe 35 Mn 15 Ni 35 at both temperatures, and at 600 °C in both materials. The differences in faulted loop population and temperature effect on swelling are correlated to the Mn-content and the measured SFE (20.2 ± 6.7 mJ/m 2 for Cr 18 Fe 27 Mn 27 Ni 28 and 9.2 ± 3.4 mJ/m 2 for Cr 15 Fe 35 Mn 15 Ni 35 ).

36 MATERIALS SCIENCE↗
DOE OSTI2024

Response of 11 B enriched ZrB 2 ultra-high temperature ceramic to neutron irradiation at elevated temperatures

ZrB 2 , an ultra-high temperature ceramic (UHTC) is being considered for use in fusion reactor first-wall structures, yet its response to irradiation remains poorly understood. This study employed scanning/transmission electron microscopy (S/TEM), synchrotron X-ray diffraction (XRD), finite element calculations, and thermal property measurements to thoroughly investigate the neutron-irradiation effects on 11 B-enriched ZrB 2 . Neutron irradiations were conducted at 220 °C and 620 °C, with a neutron fluence of 2.2 × 10 25 neutron/m 2 (energy > 0.1 MeV), resulting in 3.9 dpa and 4200 appm He. The study revealed the unusual prevalence of prism loops and a > c anisotropic lattice swelling, likely linked to the low c/a ratio of ZrB 2 , leading to grain boundary microcracking. Reducing the grain sizes was effective in reducing intergranular cracking and macroscopic swelling. The observation of cavities in ZrB 2 irradiated at 620 °C, as opposed to 220 °C, prompts questions about the temperature at which vacancies in ZrB 2 become mobile, and the role of neutron absorption by 10 B in elevating irradiation temperatures. Isotopic enrichment in 11 B proves to be a viable strategy for mitigating helium production in transition-metal diborides, which is a critical consideration for nuclear applications. Irradiation-induced defects reduce the thermal diffusivity and conductivity of ZrB 2 by a factor of 4–9, which has important implications for its role as a plasma-facing material in fusion reactors that drive high heat fluxes through first-wall materials. Here, this comprehensive study lays the foundation for understanding ZrB 2 behavior under neutron irradiation and highlights important phenomena to consider for various material applications.

36 MATERIALS SCIENCE↗
NASA NTRS2014

Advanced CMOS Radiation Effects Testing and Analysis

Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

cmos↗
DOE OSTI2023

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1985

Reliability analysis

The objective was to search for and demonstrate approaches and concepts for fast wafer probe tests of mechanisms affecting the reliability of MOS technology and, based on these, develop and optimize test chips and test procedures. Progress is reported on four important wafer-level reliability problems: gate-oxide radiation hardness; hot-electron effects; time-dependence dielectric breakdown; and electromigration.

Source record↗
NASA NTRS1987

Radiation hardening design of nuclear powered spacecraft

The design and operation of space systems utilizing nuclear fueled power systems must consider the radiation environment from the earliest stages of their design. A range of nuclear systems are being considered for present and future satellite systems capable of supplying tens of kilowatts to multimegawatt and generating a corresponding range of radiation environments. The effects of these radiations on electronics and materials can be minimized by implementing early design considerations which maximize the design efficiency and minimize the impact on system mass. Space systems design considerations for the radiation environment must include all sources in addition to the self induced gamma ray and neutron radiation. These include the orbital dependent environment from the high energy electron and protons encountered in natural space. The system trades which the designer must consider in the development of space platforms which utilize nuclear reactor power supplies are discussed.

Schmidt, R. E.↗
NASA NTRS1992

Report of the Working Group on Space/Lunar Tradeoffs

The group discussed the advantages and disadvantages of five locations for an optical/infrared array: low-Earth orbit (LEO), Sun-synchronous Earth-orbit, geosynchronous orbit (GEO), Lagrangian points (L4 and L5), and the lunar surface. The factors affecting an array and our assessments of them are given and briefly discussed. In the discussions, two axioms are assumed: (1) Human expansion into space and to the Moon will occur; and (2) The Space Station will be constructed and operational. The major conclusion reached is that baselines of moderate size (greater than 300 m) are best done on the Moon and that large baselines (greater than 10 km) can be done only on the Moon. Three areas needing additional research were identified as follows. (1) Studies are needed on methods to steer long-baseline systems in orbit. This involves learning how to control free-flyers. It is not clear how the difficulty of control varies with orbital elevation. (2) More work is needed on the internal metrology of array systems, both orbital and lunar-surface systems.(3) We need to understand the radiation effects on detectors and electronics and learn how to mitigate them.

Source record↗
NASA NTRS1993

Temperature, N2, and N density profiles of Triton's atmosphere - Observations and model

Improved analysis of the Voyager Ultraviolet Spectrometer observations of the solar occultation by Triton yields the isothermal temperature and N2 number densities in the altitude range 475-675 km. The signature of atomic nitrogen in the occultation spectra is identified, its density profile is derived, and an experimental value of the escape rate of N atoms is given. The one-dimensional thermal conductivity equation for a spherical atmosphere is solved, taking into account CO heating and cooling and heating by precipitating electrons, solar radiation, and chemical effects. Finally, profiles of number densities of N, H2, and H are calculated.

Krasnopolsky, V. A.↗
NASA NTRS2007

Advanced Optical Technologies for Space Exploration

NASA Langley Research Center is involved in the development of photonic devices and systems for space exploration missions. Photonic technologies of particular interest are those that can be utilized for in-space communication, remote sensing, guidance navigation and control, lunar descent and landing, and rendezvous and docking. NASA Langley has recently established a class-100 clean-room which serves as a Photonics Fabrication Facility for development of prototype optoelectronic devices for aerospace applications. In this paper we discuss our design, fabrication, and testing of novel active pixels, deformable mirrors, and liquid crystal spatial light modulators. Successful implementation of these intelligent optical devices and systems in space, requires careful consideration of temperature and space radiation effects in inorganic and electronic materials. Applications including high bandwidth inertial reference units, lightweight, high precision star trackers for guidance, navigation, and control, deformable mirrors, wavefront sensing, and beam steering technologies are discussed. In addition, experimental results are presented which characterize their performance in space exploration systems.

Clark, Natalie↗
NASA NTRS2024

The NASA Radiation Hardness Assurance (RHA) Process Standard

This paper presents status on the upcoming NASA Agency-level RHA Process Standard. Based on recommendations provided by the NASA Engineering and Safety Center (NESC), the NASA Electronic Parts and Packaging (NEPP) Program has led development of an agency-level standard for space flight avionics and electronics RHA. The standard introduces a novel RHA taxonomy and prescribes the process required by NASA programs and projects to baseline their RHA programs consistent with the MEAL (Mission, Environment, Application, and Lifetime) criteria including the risk tolerance posture. The standard also provides requirements for the RHA schedule integration in the program or project lifecycle and requirements for data deliverables content. Additional non-prescriptive technical content is provided in the standard appendices to guide development of RHA programs for NASA missions.

Avionics↗