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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Energy transfer in a type-I van der Waals heterostructure of WSe 2 /PtSe 2

Abstract Energy transfer of a van der Waals heterostructure formed by monolayers of WSe 2 and PtSe 2 is studied by steady-state photoluminescence (PL) and time-resolved transient absorption spectroscopy. The heterostructure sample is fabricated by transferring a mechanically exfoliated WSe 2 monolayer onto a PtSe 2 monolayer film obtained by chemical vapor deposition. The sample is thermally annealed to improve the interface quality. PL of the heterostructure is quenched by four times compared to the individual WSe 2 monolayer, indicating excitation transfer from WSe 2 to PtSe 2 . Femtosecond transient absorption measurements with two configurations show that both the electrons and the holes can transfer from WSe 2 to PtSe 2 on a sub-picosecond time scale, while neither can transfer from PtSe 2 to WSe 2 . These results indicate that WSe 2 and PtSe 2 monolayers form a type-I band alignment with both the conduction band minimum and the valence band maximum in the PtSe 2 layer.

Materials Science↗
DOE OSTI2025

Twists and turns: stacking and structure-dependent optical response in MoS 2 nanoscrolls

Transition metal dichalcogenide (TMD) nanoscrolls (NSs), specifically MoS 2 NSs, present unique structural and optical properties, exhibiting prominent photoluminescence (PL) signals despite their multilayer nature. Here, this study investigates the structural and spectroscopic characteristics of MoS 2 NSs, correlating them to show the effects of reduced interlayer interactions on excitons of MoS 2 NSs. The reduction in interlayer interaction arises from two main factors: (1) symmetry-broken mixed stacking due to misalignment between layers and (2) a highly inhomogeneous strain profile generated by the Archimedean spiral geometry with positive eccentricity. Transmission electron microscopy, field emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and second harmonic generation measurements confirm these findings. Low-temperature PL spectroscopy explores the impact of reduced interlayer interactions on exciton properties such as exciton–phonon coupling and oscillator strength. This study provides crucial insights into the structure, stacking and unique optical properties of TMD NSs, advancing the understanding of interlayer interactions and their impacts in complex quasi-one-dimensional nanostructures.

25 ENERGY STORAGE↗
DOE OSTI2022

How the Universe postpones the evaporation and curtails the quantum spreading of black holes

Black holes are expected to evaporate through the process of Hawking radiation. This process is expected to cause the uncertainty in a black hole’s position to grow to ~ $M^4/M^3_{pl}$ over the course of it’s lifetime, even as its momentum spreads only by ~ $M_{Pl}$ For the black holes that have been observed, which have M ≥ M ⊙ this greatly exceeds the Hubble volume. However, the decay of black holes and their quantum spreading, are delayed in the Universe while the influx of energy into the black holes exceeds their Hawking luminosity. We show that for these M ≥ M ⊙ black holes, their decay outside galaxies and clusters is prevented far longer than it takes the black holes to be dragged well beyond the Hubble horizon, where their eventual decay occurs away from the prying eyes of any observer who has not hitched a ride with them. Meanwhile, black holes in an observer’s galaxy or cluster are themselves prevented from decaying long past the extinction of the last stars, and at least until their galaxy/cluster is swept clean of dark matter, in $\gg$ 10 25 y. Even then, if the black holes become unbound, then they are dragged beyond the Hubble radius before undergoing significant decay; if not, they remain in bound orbits, spreading at most over a subvolume of the galaxy/cluster, and long localized by scatterings to much smaller volumes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Virtual Hawking Radiation

We consider the effects of off-shell Hawking radiation on scattering processes involving black holes coupled to quantum fields. The focus here is to the case of gravitational scattering of a scalar field mediated by the exchange of virtual Hawking gravitons from a four-dimensional Schwarzschild black hole. Our result is obtained in the context of a worldline effective field theory for the black hole, and is valid in the semi-classical limit where the Schwarzschild radius rs is larger than the Planck length 1/m Pl . In addition, we assume that four-momentum exchange q is smaller than r s –1 and that the incoming particle has energy larger then the black hole's Hawking temperature. The inelastic cross section we obtain is a new, leading order quantum gravity effect, arising at the same order in q 2 /$m$ $^{2}_{Pl}$ as the well understood one-loop graviton vacuum polarization corrections to gravitational scattering between massive particles.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Enhanced Frequency Support Scheme of Generic Inverter-Based Resource Models for Renewable-Dominated Power Grids

The frequency response of SG-dominated power grids is predictable ahead of an occurrence of a frequency event because the frequency response of SGs is consistent, and it can be inferred from the swing equation [1]. However, increasing the portion of IBRs in an SG-dominated power grid might make the characteristics of the conventional power grids no longer valid because this changing resource mix affects grid dynamics and controls [2]. Thus, maintaining these characteristics greatly benefits the control and operation of the power grids with high penetration of IBRs. To maintain these characteristics in IBR-dominated power grids, IBRs should have frequency response capability similar to that of an SG. The WECC modeling validation subcommittee has developed generic IBR models for large system planning [3]-[5]. These models can represent various vendors' dynamic behavior for WTG, PV, and ESS [5]. The current generic IBR models approved by WECC can provide frequency response only from droop control loops in REPC models [6], [7]. The contribution of the loops is proportional to the frequency deviation from the nominal frequency. Thus, it presents an insufficient contribution to arrest frequency variation compared to the frequency response of SGs because it allows a high ROCOF in the early stage of frequency events. This shortfall will become greater as the PL of IBRs increases in power grids. Controller enhancement for the generic IBR models is required to secure the frequency stability under high PL of IBRs as in the SG-dominated power grids. This paper proposes a control extension for the generic IBR models to enhance the frequency support capabilities and discusses the classification of frequency support for the different types of IBR considering their operating constraints. An inertial control scheme is implemented in the REPC and REEC models of the generic IBR models to achieve these objectives. The inertial control scheme includes the following stages: Control area data acquisition, inertia time constant estimation, IBR-related constraint check, IBR contribution determination, and inertial response provision. In the scheme, a REPC acquires control area data from a system operator and estimates a total inertia time constant for the control area the applicable IBR power plant belongs. Then, the estimated inertial time constant is transferred to each IBR controller—REEC—within the power plant. Each REEC checks the availability of applicable IBR for inertial response participation. If the IBR is available, the REEC amplifies the estimated inertial time constant to utilize it for inertial response provision. In this way, the proposed inertial response scheme extends the functionality of the generic IBR models to provide SG-like frequency response within their constraints. Various scenarios considering different IBR types, IBR penetration levels, and frequency control schemes were simulated and compared in an IEEE 39-bus system using PSCAD simulator to verify the effectiveness of the proposed scheme.

Kim, Jinho↗
DOE OSTI2022

H-GCN: A Graph Convolutional Network Accelerator on Versal ACAP Architecture

Recently Graph Neural Networks (GNNs) have drawn tremendous attentions due to their unique capability to extend the Machine Learning (ML) approaches to broadly defined applications with unstructured data, especially graphs. Comparing with other ML modalities, the acceleration of GNNs is as critical but even more challenging due to the irregularity and heterogeneity from graph typologies that together limit the performance. Existing efforts mainly focus on handling graphs’ irregularity, however, have not studied the heterogeneity. To this end, in this work, we propose H-GCN, a PL-AIE-based hybrid accelerator that leverages the emerging heterogeneity of Xilinx Versal ACAPs to achieve high-performance GNN inference. In particular, H-GCN partitions each graph into three subgraphs based on its inherent heterogeneity and processes them using PL and the newly emerged AIE respectively. To further improve the performance, we explore the sparsity support of AIE and develop an efficient density-aware method to map tiles of SpMM onto the systolic tensor array automatically. Compared with the current state-of-the-art GCN accelerator, HGCN achieves on average 1.5× speedups.

Zhang, Chengming↗
DOE OSTI2024

Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers

Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. Here, the epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Transparent MgO for Back-Contact Passivation of CdTe-Based Solar Cells

The passivating effects of MgO have been studied by integrating into an existing superstrate CdTe thin film solar cell device architecture. When implemented as an emitter to replace the typical MZO, the device performance was below par, but improved PL and TRPL was detected with significant carrier lifetimes in comparison to the MZO devices. However, when integrated at the back, the PL signal was detected upon the illumination of excitation laser from the back. This has opened the possibility of probing the back of the CdTe thin film solar cells with transparent back contact with improved back passivation and a bifacial device structure. Further, the TRPL measurements suggests that the MgO shows passivating effects to a CdTe surface irrespective of method of deposition implemented.

bifacial↗
DOE OSTI2021

Numerical Analysis of Time Resolved Photoluminescence for Alumina/Cd(Se,Te) Double Heterostructures

Al2O3 has demonstrated excellent Cd(Se,Te) surface passivation. In this work, recombination mechanisms were investigated by comparing simulations of time resolved photoluminescence (TRPL) to PL decay data (320 ns effective lifetime) for Al2O3 /Cd(Se,Te)/Al2O3 double heterostructures. Models were employed to investigate the effects of bulk and surface recombination, electric fields, mobility, and doping by simulating intensity-dependent single- (1PE) and two-photon excitation (2PE) TRPL. 2PE simulations replicate decay behavior while 1PE simulations require attention to charge redistribution. Various coupled mechanisms cannot be distinguished from PL decay data alone. Complementary measurements are required to constrain the model parameters and isolate mechanisms.

CdTe↗
DOE OSTI2021

Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules

Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2024

In-Situ Luminescence Imaging of Perovskite Solar Cells Demonstrates Increasing Spatial Nonuniformity Upon Light-Soaking Degradation

In this work we investigate degradation rates of triplecation mixed-halide perovskite p-i-n solar cells. We present an accelerated stress testing procedure using periodic blue light-soaking at elevated temperatures until devices reach ~80% of their initial efficiency. We track light-induced degradation via in-situ: photoluminescence (PL), current-voltage (I-V) curves, and transient photovoltage. Devices underwent 165 hours of light bias at 65degrees C. Results suggest that spatial uniformity in PL intensity decreases as device degradation increases. This investigation lays the groundwork to address the current gap in understanding the interplay between device performance and the evolution of macroscopic features in perovskite solar cells. Thus, we believe spatial characterization techniques will play a crucial role in the commercialization of perovskite solar cells.

imaging↗
DOE OSTI2023

Photoluminescence spectroscopy of Cr 3+ in β-Ga 2 O 3 and (Al 0.1 Ga 0.9 ) 2 O 3

Alloying β-Ga 2 O 3 with Al 2 O 3 to create (Al x Ga 1–x ) 2 O 3 enables ultra-wide bandgap materials suitable for applications deep into ultraviolet. In this work, photoluminescence (PL) spectra of Cr 3+ were investigated in monoclinic single crystal β-Ga 2 O 3 , and 10 = mol. % Al 2 O 3 alloyed with β-Ga 2 O 3 , denoted β-(Al 0.1 Ga 0.9 ) 2 O 3 or AGO. Temperature-dependent PL properties were studied for Cr 3+ in AGO and β-Ga 2 O 3 from 295 to 16 K. For both materials at room temperature, the red-line emission doublet R 1 and R 2 occurs at 696 nm (1.78 eV) and 690 nm (1.80 eV), respectively, along with a broad emission band at 709 nm (1.75 eV). Here, the linewidths for AGO are larger for all temperatures due to alloy broadening. For both materials, the R-lines blue-shift with decreasing temperature. The (lowest energy) R 1 line is dominant at low temperatures due to the thermal population of the levels. For temperatures above ~50 K, however, the ratio of R 2 to R 1 peak areas is dominated by nonradiative combination.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Multi stage and illumination dependent segregation in MAPb(I,Br)3

© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only. An unsolved problem of mixed halide perovskites is the light induced compositional instability. Under illumination microscopic clusters with a higher iodide content form which act as efficient recombination centers reducing device performance. In photoluminescence measurements this leads to the development of a secondary peak at low energies that increases in intensity and shifts towards lower energies. Different theories for about the origin have been developed but the underlying key mechanisms are still under debate. In the presented study the photoluminescence evolution of MAPb(I1.5Br1.5) perovskites with varying microstructure is investigated at various excitation densities and temperatures. We find a more evolved segregation mechanism with an intermediate stage between the commonly reported mixed phase and the appearance of the I-rich clusters (Br content < 50%). In this intermediate stage perovskite domains with nearly pure iodide content form (Br content < 25%). Using low excitation densities, the interplay between the I-rich domains and the I-rich clusters leads to a blue shift of the conjunct I-rich luminescence peak. At high excitation densities the I-rich domains and the I-rich clusters are clearly distinguishable, due to a stronger PL response of the I-rich domains. With continuous illumination more I-rich cluster form acting as carrier traps and recombination centers. Due to this, the influence of the few I-rich domains on the PL signature decreases leaving only the commonly reported red shift of the I-rich clusters at later stages of the segregation. The formation of the I-rich domains is fully reversible in the dark and occurs also at elevated temperatures. Measurements on sample with varying grain size further indicate an enhanced formation of those I-rich domains on samples with high grain boundary density possibly by a faster halide mobility along them.

Babbe, F↗
DOE OSTI2020

Structural and spectral dynamics of single-crystalline Ruddlesden-Popper phase halide perovskite blue light-emitting diodes

Achieving perovskite-based high–color purity blue-emitting light-emitting diodes (LEDs) is still challenging. Here, we report successful synthesis of a series of blue-emissive two-dimensional Ruddlesden-Popper phase single crystals and their high–color purity blue-emitting LED demonstrations. Although this approach successfully achieves a series of bandgap emissions based on the different layer thicknesses, it still suffers from a conventional temperature-induced device degradation mechanism during high-voltage operations. To understand the underlying mechanism, we further elucidate temperature-induced device degradation by investigating the crystal structural and spectral evolution dynamics via in situ temperature-dependent single-crystal x-ray diffraction, photoluminescence (PL) characterization, and density functional theory calculation. The PL peak becomes asymmetrically broadened with a marked intensity decay, as temperature increases owing to [PbBr 6 ] 4- octahedra tilting and the organic chain disordering, which results in bandgap decrease. This study indicates that careful heat management under LED operation is a key factor to maintain the sharp and intense emission.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electrogenerated Chemiluminescence of Near-Infrared-Emitting CdSe@CdSe Nanorods in Aqueous Solution

Electrogenerated chemiluminescence (ECL) was observed from TOPO-capped CdSe@CdSe nanorods (NRs) depositing on a metal electrode in phosphate buffer solution (PBS). Two ECL peaks at -1.05 and -1.33 V in pH 9.2, 0.1 M PBS were found under cyclic voltammetric conditions. Cyclic voltammetry of this solution displayed no distinctive features, on the other hand, light emission was observed during cyclic potential scans. Additionally, the photoluminescence (PL) spectrum showed an emission maximum at 692 nm. The spectrum of ECL possesses one peak which coincides very well with the PL spectrum of the nanorods film. The mechanism for ECL peaks was proposed. Electron transfer reactions between charged nanorods and molecular redox-active coreactants such as dissolved oxygen and H2O2 or between positively and negatively charged nanorods occurred that led to electron and hole annihilation, producing light.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Enhanced radiative and thermal properties from surface encapsulation of InAs nanowires

In this work, photoluminescence (PL), quantum efficiency and carrier dynamics are investigated in indium arsenide (InAs) nanowires (NWs) with various surface treatments, including a molecular beam epitaxy (MBE)-grown semiconductor shell passivation, sulfur-passivation, alumina (Al 2 O 3 ) coating by atomic layer deposition (ALD) and polydimethylsiloxane (PDMS) spin-coating. The ALD-dielectric layer-coated InAs core-shell NWs show a maximum 13-fold increase in PL intensity. In contrast to the previous reports, this enhancement is found to be due to increased radiative rate from an enhanced Purcell factor, better thermal conductance and higher carrier injection within the NWs instead of improved surface quality. Numeric simulations confirm the experimentally observed increased radiative rate. Further improvements are suggested with even thicker capped InAs NWs. Carrier lifetime in surface-treated NWs is extended and shows long-term stability, critical for practical devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Cristae formation is a mechanical buckling event controlled by the inner mitochondrial membrane lipidome

Cristae are high–curvature structures in the inner mitochondrial membrane (IMM) that are crucial for ATP production. While cristae–shaping proteins have been defined, analogous lipid–based mechanisms have yet to be elucidated. Here, we combine experimental lipidome dissection with multi–scale modeling to investigate how lipid interactions dictate IMM morphology and ATP generation. When modulating phospholipid (PL) saturation in engineered yeast strains, we observed a surprisingly abrupt breakpoint in IMM topology driven by a continuous loss of ATP synthase organization at cristae ridges. We found that cardiolipin (CL) specifically buffers the inner mitochondrial membrane against curvature loss, an effect that is independent of ATP synthase dimerization. To explain this interaction, we developed a continuum model for cristae tubule formation that integrates both lipid and protein–mediated curvatures. This model highlighted a snapthrough instability, which drives IMM collapse upon small changes in membrane properties. We also showed that cardiolipin is essential in low–oxygen conditions that promote PL saturation. These results demonstrate that the mechanical function of cardiolipin is dependent on the surrounding lipid and protein components of the IMM.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

MOCVD Growth and Characterization of Wide Bandgap ZnGeN 2 Thin Films

ZnGeN 2 is a wide bandgap material having less than 0.1% lattice mismatch with GaN and bandgap within few percent of that of GaN. Based on the first principle calculations, the valence band of ZnGeN 2 is situated ~1.4 eV above that of GaN at the heterointerface. Such a staggered band alignment between two closely lattice matched materials has already been demonstrated promising for novel optoelectronic device designs, for example, high efficiency blue and green light emitting diodes. However, the research on ZnGeN 2 is yet to pass the inceptive period. We report on the growth of single crystalline ZnGeN 2 films using metalorganic chemical vapor deposition and investigation on the crystalline, optical, electrical properties. Diethylzinc (DEZn), germane (GeH 4 ) and ammonia were used as the precursors for Zn, Ge and N, respectively. Films were grown on GaN and sapphire substrates. The Zn/Ge atomic ratio in the films determined from energy dispersive X-ray spectroscopy was found to decrease with increase in growth temperature but to increase with increase in pressure and DEZn/GeH 4 molar flow rate ratio. The X-ray diffraction (XRD) 2θ-ω spectra of the single crystalline ZnGeN 2 films resembled those of orthorhombic (perfectly ordered cations) or distorted wurtzite (disordered cations) polymorphs. High resolution scanning transmission electron microscopy imaging was used to further investigate the crystalline quality and crystalline structure of the films. The single crystalline films on c-sapphire or GaN substrates were found to have planar surface from scanning electron micrographs while those on r-sapphire substrate had stepped surface. No near band edge peak but a broad peak at ~2.05 eV was observed in the photoluminescence (PL) spectra, which was attributed to the transitions involving deep level defects. The PL excitation spectra peaked around 3.4 eV, which is due to the enhanced absorption of photons having energy close to the band gap. The as grown films were found to be n-type with 10 18 – 10 19 cm -3 carrier densities and mobility up to 17 cm 2 /V·s. In the end, the advancement made in this work regarding the growth of ZnGeN 2 thin films is a footstep towards the understanding of the material itself and in turn, towards the implementation of ZnGeN 2 based novel device designs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗