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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Growth and properties of Hg-based quantum well structures and superlattices

An overview of the properties of HgTe-CdTe quantum well structures and superlattices (SL) is presented. These new quantum structures are candidates for use as new long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) detectors, as well as for other optoelectronic applications. Much has been learned within the past two years about the physics of such structures. The valence band offset has been determined to be approx. 350 meV, independent of temperature. The occurrence of electron and hole mobilities in excess of 10(exp 5)cm(exp 2)/V center dot s is now understood on the basis of SL band structure calculations. The in-plane and out-of-plane electron and hole effective masses have been measured and interpreted theoretically for HgTe-CdTe superlattices. Controlled substitutional doping of superlattices has recently been achieved at North Carolina State University (NCSU), and modulation-doped SLs have now been successfully grown and studied. Most recently, a dramatic lowering of the growth temperature of Hg-based quantum well structure and SLs (to approx. 100 C) has been achieved by means of photoassisted molecular beam epitaxy (MBE) at NCSU. A number of new devices have been fabricated from these doped multilayers.

Schetzina, J. F.↗
NASA NTRS1990

InAs/GaAs and InAs doping superlattices

The extension of the optical response of narrow band gap III-V semiconductors into the long wavelength infrared radiation (LWIR) regime for high sensitivity sensor applications is a challenging problem. Recent advances in nipi doped GaAs superlattices, lattice mismatched epitaxy and the heteroepitaxial growth of III-V compound semiconductors on silicon substrates offer a number of opportunities. Researchers describe two different device approaches based on the molecular beam epitaxy (MBE) growth of superlattice materials which are directed to LWIR focal plane array technology. The first of these uses nipi superlattices fabricated in bulk InAs which has been grown on either GaAs or Si substrates. The second is based on the growth of a new pseudomorphic tetragonal phase of InAs on GaAs to create a semimetal/semiconductor superlattice material.

Grunthaner, Frank J.↗
NASA NTRS1989

Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy

The preparation of hydrogen-terminated silicon surfaces for use as starting substrates for low-temperature MBE growth is examined in detail. The procedure involves the ex situ removal under nitrogen of residual oxide from a silicon substrate using a spin-clean with HF in ethanol, followed by the in situ low-temperature desorption (150 C) of physisorbed etch residues. The critical steps and the chemical basis for these steps are examined using X-ray photoelectron spectroscopy. Impurity residues at the epilayer-substrate interface following subsequent homoepitaxial growth are studied using AES, SIMS and TEM. Finally, scanning tunneling microscopy is used to examine the effect of cleaning methods on substrate morphology.

Grunthaner, P. J.↗
NASA NTRS1990

Energetics of molecular-beam epitaxy models

The removal energies of constituent atoms from various unreconstructed semiconductor surfaces are calculated using a Green function method. An efficient difference-equation approach within the second-neighbor tight-binding model is employed. For a compound AB, binding energies for the A and B atoms on the (111), (-1 -1 -1), (100), and (110) surfaces are calculated. Analyses are made of the energy to remove an atom from the nearly full surface and from the nearly empty surface. Results are presented for Si, GaAs, CdTe, and HgTe; and the surface sublimation energies are found to depend on surface coverage and do not display a simple linear relationship to the number of bonds broken, as is often assumed in modeling growth by MBE.

Krishnamurthy, Srinivasan↗
NASA NTRS1989

Long wavelength semiconductor lasers development for infrared heterodyne applications

PbSnTe single crystals were grown in a new 3 zone furnace. Molecular beam epitaxy (MBE) growth parameters have been established, including beam flux vs. temperature, and growth rates and dopant vs. PbTe flux ratios for the various effusion sources involved. Lattice matching studies were conducted and doping studies were completed. Broad area Pb(1-x)Sn(x)Te double heterostructure lasers were fabricated with active layer compositions up to x equals 0.04 at percent Sn in the active layers. Electrical and optical test data are presented.

Feit, Zeev↗
NASA NTRS1991

Advanced silicon on insulator technology

Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

Godbey, D.↗
NASA NTRS1992

The temperature dependent variation of bulk and surface composition of In(x)Ga(1-x)As on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

The paper investigates the bulk as well as near-surface composition of In(x)Ga(1-x)As epilayers on GaAs grown by chemical beam epitaxy (CBE) as a function of triethylindium flow rate and substrate temperature by reflection high energy electron diffraction (RHEED), X-ray diffraction, and XPS. To clarify whether the bulk stoichiometry of CBE-grown ternaries can be extracted from the growth rate change as determined by the change in the period of RHEED oscillations from binary to ternary compound growth, a systematic study of growth rate change as a function of ternary bulk composition determined by X-ray diffraction was performed at various temperatures. It is shown that for low growth temperatures there is a linear relationship between the two methods of determination, whereas no correlation is found for higher growth temperatures, in contrast to the MBE case where the two methods of determination yield identical results. In the near surface region the epilayer composition is determined in situ by XPS.

Hansen, H. S.↗
NASA NTRS1992

INAS hole-immobilized doping superlattice long-wave-infrared detector

An approach to long-wave-infrared (LWIR) technology is discussed. The approach is based on molecular beam epitaxy (MBE) growth of hole immobilized doping superlattices in narrow band gap 3-5 semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures suitable for focal plane arrays. An LWIR detector that has high detectivity performance to wavelengths of about 16 microns at operating temperatures of 65K, where long-duration space refrigeration is plausible, is presented.

Maserjian, Joseph↗
NASA NTRS1992

AlGaAs/GaAs quasi-bulk effect mixers: Analysis and experiments

The lowest noise temperature for any receiver in the 0.5 to 1 THz range has been achieved with the bulk InSb hot electron mixer, which unfortunately suffers from the problem of having a very narrow bandwidth (1-2 MHz). We have demonstrated a three order of magnitude improvement in the bandwidth of hot electron mixers, by using the two-dimensional electron gas (2DEG) medium at the hetero-interface between AlGaAs and GaAs. We have tested both inhouse MOCVD-grown material, and MBE materials, with similar results. The conversion loss (L(sub c)) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that L(sub c) can be decreased to about 10 dB in future devices. Calculated and measured curves of L(sub c), versus PLO and IDC, respectively, agree well. We argue that there are several different configurations of hot electron mixers, which will also show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

Yngvesson, K. S.↗
NASA NTRS1992

GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 percent was obtained at 135.3 GHz.

Eisele, H.↗
NASA NTRS1993

Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices

We present an ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer superlattices grown by MBE at low temperature (500 C), and compare our results with X-ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. We show that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. We also note that we do not observe any strain effect on the E1 critical point.

Sieg, R. M.↗
NASA NTRS1992

Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

George, T.↗
NASA NTRS1991

Long-wave infrared (LWIR) detectors based on III-V materials

Future NASA missions for earth observation and planetary science require large photovoltaic detector arrays with high performance in the long wavelength region to 18 microns and at operating temperatures above 65 K where single-cycle long-life cryocoolers are being developed. Since these detector array requirements exceed the state of current HgCdTe technology, alternative detector materials are being investigated as a possible option for future missions. Advanced growth techniques (e.g., MBE and MOCVD) of column III-V semiconductors have opened opportunities for engineering new detector materials and device structures. The technical approaches under investigation at JPL (with university and industry participation) include: quantum well infrared photodetectors, heterojunction internal photoemission (HIP) photodetectors, type-II strained layer superlattices, and nipi doping superlattices. Each of these options are briefly described with some of their pros and cons. A more detailed description is given for the HIP approach being pioneered at JPL.

Maserjian, Joseph↗
NASA NTRS1991

Advanced Si IR detectors using molecular beam epitaxy

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

Lin, T. L.↗
NASA NTRS1993

Wide-bandwidth electron bolometric mixers - A 2DEG prototype and potential for low-noise THz receivers

This paper presents a new type of electron bolometric ('hot electron') mixer. We have demonstrated a 3 order-of-magnitude improvement in the bandwidth compared with previously known types of electron bolometric mixers, by using the two-dimensional electron gas (2DEG) medium at the heterointerface between AlGaAs and GaAs. We have tested both in-house MOCVD-grown material and MBE material, with similar results. The conversion loss (Lc) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that Lc can be decreased to about 10 dB in future devices. Calculated and measured curves of Lc versus P(LO), and I(DC), respectively, agree well. We argue that there are several different configurations of electron bolometric mixers, which will all show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

Yang, Jian-Xun↗
NASA NTRS1992

Cryogenic measurements of aerojet GaAs n-JFETs

The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the lowest noise readings possible and 3) with an extrinsic silicon photodetector at various detector bias voltages, to determine optimum operating conditions. Current noise characterization was measured at the drain in the temperature range 300 to 77 K. Device design and MBE processing are described. Static I-V characterization is done at 300, 77 and 6 K. The measurements indicate that the Aerojet GaAs n-JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered as a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to that of Si MOSFETs operating at liquid helium temperatures, and is equal to the best Si n-JFETs operating at 300 K.

Goebel, John H.↗
NASA NTRS1993

Magneto-optic superlattice thin films: Fabrication, structural and magnetic characterization

During this quarter studies were extended to determine the electronic contribution to the perpendicular interface anisotropy in Co-based multilayers. Using in situ Kerr effect measurements, the influences of different transition metals (TM = Ag, Au, Cu, and Pd) on the magnetic properties of single-crystal Co films grown on Pd (111) and Au (111) surfaces are investigated. Last quarter the discovery of a large peak in the perpendicular anisotropy when approximately one monolayer of Cu or Ag is deposited on the Co surface was reported. We now have added a computer-controlled stepper-motor drive to our MBE sample transfer mechanism. The motor allows us to move the sample at a constant velocity from behind a shutter during deposition. The film, therefore, is deposited as a wedge with a linear variation of thickness across the substrate. In this way, a continuous range of coverage on a single sample is studied. The stepper motor also provides the necessary control for precisely positioning the sample in the laser beam for Kerr effect measurements at the different coverages.

Falco, C. M.↗
NASA NTRS1993

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Jordan, Rebecca H.↗