Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon
Abstract not provided
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
SEARCH · Engineering Papers
Results for “LINE DEFECTS”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Inflaton fluctuations in the presence of cosmological defects
We study quantum fluctuations of a free massless scalar field during inflation in the presence of a point, line, or plane defect such as a black hole, cosmic string, or domain wall, using a perturbative expansion in powers of small defect parameters. We provide results for the scalar two-point correlation functions that show explicitly a small violation of translational invariance during inflation.
79 ASTRONOMY AND ASTROPHYSICS↗
The Convolutional Multiple Whole Profile (CMWP) Fitting Method, a Global Optimization Procedure for Microstructure Determination
The analysis of line broadening in X-ray and neutron diffraction patterns using profile functions constructed on the basis of well-established physical principles and TEM observations of lattice defects has proven to be a powerful tool for characterizing microstructures in crystalline materials. These principles are applied in the convolutional multiple-whole-profile (CMWP) procedure to determine dislocation densities, crystallite size, stacking fault and twin boundary densities, and intergranular strains. The different lattice defect contributions to line broadening are separated by considering the hkl dependence of strain anisotropy, planar defect broadening and peak shifts, and the defect dependent profile shapes. The Levenberg–Marquardt (LM) peak fitting procedure can be used successfully to determine crystal defect types and densities as long as the diffraction patterns are relatively simple. However, in more complicated cases like hexagonal materials or multiple-phase patterns, using the LM procedure alone may cause uncertainties. Here, we extended the CMWP procedure by including a Monte Carlo statistical method where the LM and a Monte Carlo algorithm were combined in an alternating manner. The updated CMWP procedure eliminated uncertainties and provided global optimized parameters of the microstructure in good correlation with electron microscopy methods.
36 MATERIALS SCIENCE↗
Carbon as a source for yellow luminescence in GaN: Isolated C{sub N} defect or its complexes
We study three carbon defects in GaN, isolated C{sub N} and its two complexes with donors C{sub N}–O{sub N}, and C{sub N}–Si{sub Ga}, as a cause of the yellow luminescence using accurate hybrid density functional calculation, which includes the semi-core Ga 3d electrons as valence electrons and uses a larger 300-atom supercell. We show that the isolated C{sub N} defect yields good agreement with experiment on the photoluminescence (PL) peak position, zero-phonon line, and thermodynamic defect transition level. We find that the defect state of the complexes that is involved in the PL process is the same as that of the C{sub N} defect. The role of the positively charged donors (O{sub N} or Si{sub Ga}) next to C{sub N} is to blue-shift the PL peak. Therefore, the complexes cannot be responsible for the same PL peak as isolated C{sub N}. Our detailed balance analysis further suggests that under thermal equilibrium at typical growth temperature, the concentration of isolated C{sub N} defect is orders of magnitude higher than the defect complexes, which is a result of the small binding energy in these complexes.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Precise measurement of charged defects in III-V compounds (supplement 2)
Experimental methods and related theory which will permit the measurement of low concentrations of vacancies and other defects in III-V compound semiconductors are discussed. Once the nature of these defects has been determined, this information can be incorporated into a transport theory for devices constructed from these materials, and experiments conducted to test the theory. The vacancies and other defects in the III-V compounds are detected by measurement of the nuclear magnetic resonance (NMR) line width. Most of the III-V compounds have at least one isotope with a nuclear quadrupole moment. In a crystal with a cubic crystal field (characteristic of most III-V compounds) there is no quadrupole splitting of the Zeeman resonance line. However, a defect removes the cubic symmetry locally and causes splitting which result in a change of the NMR width. This change can be used to detect the presence of vacancies.
Soest, J. F.↗
Impact of crystalline defects and size on X-ray line broadening: A phenomenological approach for tetragonal SnO{sub 2} nanocrystals
Nanocrystalline tin oxide (SnO{sub 2}) powders with different grain size were prepared by chemical precipitation method. The reaction was carried out by varying the period of hydrolysis and the as-prepared samples were annealed at different temperatures. The samples were characterized using X-ray powder diffractometer and transmission electron microscopy. The microstrain and crystallite size were calculated for all the samples by using Williamson-Hall (W-H) models namely, isotropic strain model (ISM), anisotropic strain model (ASM) and uniform deformation energy density model (UDEDM). The morphology and particle size were determined using TEM micrographs. The directional dependant young’s modulus was modified as an equation relating elastic compliances (s{sub ij}) and Miller indices of the lattice plane (hkl) for tetragonal crystal system and also the equation for elastic compliance in terms of stiffness constants was derived. The changes in crystallite size and microstrain due to lattice defects were observed while varying the hydrolysis time and the annealing temperature. The dependence of crystallite size on lattice strain was studied. The results were correlated with the available studies on electrical properties using impedance spectroscopy.
36 MATERIALS SCIENCE↗
An infrared bootstrap of the Schur index with surface defects
The infrared formula relates the Schur index of a 4d $\mathcal{N}$ = 2 theory to its wall-crossing invariant, a.k.a. BPS monodromy. A further extension of this formula, proposed by Córdova, Gaiotto and Shao, includes contributions by many types of line and surface defects. We study BPS monodromies in the presence of vortex surface defects of arbitrary vorticity for general class $\mathcal{S}$ theories of type A 1 engineered by UV curves with at least one regular puncture. The trace of these defect BPS monodromies is shown to coincide with the action of certain q-difference operators acting on the trace of the (pure) 4d BPS monodromy. We use these operators to develop a “bootstrap” (of traces) of BPS monodromies, relying only on their infrared properties, thereby reproducing the very general ultraviolet characterization of the Schur index.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Quantitative description of microstructure defects in hexagonal boron nitrides using X-ray diffraction analysis
A routine for simultaneous quantification of turbostratic disorder, amount of puckering and the dislocation and stacking fault density in hexagonal materials was proposed and tested on boron nitride powder samples that were synthesised using different methods. The routine allows the individual microstructure defects to be recognised according to their effect on the anisotropy of the X-ray diffraction line broadening. For quantification of the microstructure defects, the total line broadening is regarded as a linear combination of the contributions from the particular defects. The total line broadening is obtained from the line profile fitting. As testing material, graphitic boron nitride (h-BN) was employed in the form of hot-isostatically pressed h-BN, pyrolytic h-BN or a h-BN, which was chemically vapour deposited at a low temperature. The kind of the dominant microstructure defects determined from the broadening of the X-ray diffraction lines was verified by high resolution transmission electron microscopy. Their amount was attempted to be verified by alternative methods. - Highlights: • Reliable method for quantification of microstructure defects in BN was suggested. • The method is based on the analysis of anisotropic XRD line broadening. • This XRD line broadening is unique and characteristic of the respective defect. • Thus, the quantification of coexistent microstructure defects is possible. • The method was tested on hexagonal BN, which was produced by different techniques.
36 MATERIALS SCIENCE↗
Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition
Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm{sup −1} and 584 cm{sup −1} are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Defects in electro-optically active polymer solids
There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).
Martin, David C.↗
Possible role of grain-boundary and dislocation structure for the magnetic-flux trapping behavior of niobium: A first-principles study
In this work, first-principles methods were used to understand magnetic flux trapping at vacancies, dislocations, and grain boundaries in high-purity superconducting niobium. Full-potential linear augmented plane-wave methods were applied in progressively greater complexity, starting at simple vacancies and extending to screw dislocations and tilt grain boundaries to analyze the effects of magnetic field on the superconducting state surrounding these defects. Density-functional theory calculations identified changes in electronic structure at the dislocation core and different types of symmetric tilt grain boundaries relative to bulk niobium. Electron redistribution enhanced nonparamagnetic effects and thus perturb superconductivity, resulting in local conditions suitable for premature flux penetration and subsequently flux pinning. Since the coherence length of superconducting niobium at 0 K is significantly larger than the lattice parameter, the effects of line and planar defects in niobium are predicted to be stronger for defect clusters than single defects in isolation, which is consistent with recent experimental observations. Controlling accumulation or depletion of charge at the defects, e.g., by segregation of an impurity atom, can mitigate these tendencies thus increasing the quality of superconducting niobium.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Geometrical Frustration and Defect Formation in Growth of Colloidal Nanoparticle Crystals on a Cylinder: Implications for Assembly of Chiral Nanomaterials
Using a combination of experiment and simulation, we study how two-dimensional (2D) crystals of colloidal nanoparticles grow on cylindrical substrates. The cylindrical geometry allows us to examine growth in the absence of Gaussian curvature but in the presence of a closure constraint - the requirement that a crystal loops back onto itself. In some cases, this constraint results in structures that have been observed previously in theory and nonequilibrium packing experiments: chiral crystals and crystals with linear defects known as "line slips". More generally, though, the structures we see differ from those that have been observed: the line slips are kinked and contain partial vacancies. We show that these structures arise because the cylinder changes how the crystal grows. After a crystal wraps around the cylinder and touches itself, it must grow preferentially along the cylinder axis. As a result, crystals with a chiral line slip tend to trap partial vacancies. Indeed, we find that line slips that are less aligned with the cylinder axis incorporate more partial vacancies on average than the ones that are more aligned. Here, these results show that crystal growth on a cylinder is frustrated by the closure requirement, a finding that may shed some light on the assembly of biological nanosystems such as tobacco mosaic virus and might inform ways to fabricate chiral optical nanomaterials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Energetics of Lithium Insertion into Magnetite, Defective Magnetite, and Maghemite
At low concentrations of lithium insertion into inverse spinel magnetite Fe 3 O 4 , a phase change to rock-salt-like Li x Fe 3 O 4 has been observed. Here, we used density-functional-theory-based (DFT-based) calculations to study the structural origins of this phase change, the concentration at which it occurs, the role of iron vacancies, and the stability of the various motifs that form during the electrochemical reduction process in the Li–Fe–O ternary space up to x = 1.33. We compared our results to new experimental measurements of the open circuit voltage for 8–9 nm magnetite particles over a comparable range of lithium insertion. Of the vacant sites in magnetite (16c, 8b, and 48f) lithium insertion was found to be most stable on 16c. Coulomb interactions between the added lithium and iron at the 8a site in magnetite led to substantial displacement of the iron. As further lithium was added, the most energetically favored motif involved lithium clustering in 16c sites around the shifted 8a iron up to a total of three lithiums. In competition with the lithium clustering motif, lithium insertion could be accompanied by the full displacement of all 8a iron to 16c sites, to form the rock-salt-like Li x Fe 3 O 4 , saturating at x = 1. The defective rock-salt structure was found to be more stable than the lithium clustering motif for x ≥ 0.5. The rock-salt-like LiFe 3 O 4 was found to be stable in the Li–Fe–O ternary space for a continuous range of Li–Fe organization on the 16c sites, stabilized by Coulomb interactions. For x < 1, neither the lithium clustering motif, nor the defective rock-salt-like structure for LixFe 3 O 4 were stable against phase segregation to LiFe 3 O 4 and Fe 3 O 4 . This phase segregation (0 < x < 1) occurred at a predicted voltage of ~2.0 V. However, when iron vacancies on the 16d site were introduced, lithium insertion to those vacant 16d sites in Fe 2.875 O 4 , and γ-Fe 2.67 O 4 (maghemite), resulted in stable intercalated materials at a predicted voltage of ~3.0 V. Beyond the concentration of such iron vacancy sites, phase segregation was predicted to the rock-salt-like Li 1.125 Fe 2.875 O 4 and Li 1.33 Fe 2.67 O 4 , again at ~2.0 V. These results were consistent with measured open circuit voltages. Finally, the relative stability for several lithium compositions along the FeO to LiFeO 2 tie line in the defective rock-salt structure suggested stable compound formation for a range of lithium–iron compositions, but without long-range order in the cation sublattice, consistent with what has been commonly observed in the literature.
36 MATERIALS SCIENCE↗
The endoperoxide ascaridol shows strong differential cytotoxicity in nucleotide excision repair-deficient cells
Targeting synthetic lethality in DNA repair pathways has become a promising anti-cancer strategy. However little is known about such interactions with regard to the nucleotide excision repair (NER) pathway. Therefore, cell lines with a defect in the NER genes ERCC6 or XPC and their normal counterparts were screened with 53 chemically defined phytochemicals isolated from plants used in traditional Chinese medicine for differential cytotoxic effects. The screening revealed 12 drugs that killed NER-deficient cells more efficiently than proficient cells. Five drugs were further analyzed for IC{sub 50} values, effects on cell cycle distribution, and induction of DNA damage. Ascaridol was the most effective compound with a difference of > 1000-fold in resistance between normal and NER-deficient cells (IC{sub 50} values for cells with deficiency in ERCC6: 0.15 μM, XPC: 0.18 μM, and normal cells: > 180 μM). NER-deficiency combined with ascaridol treatment led to G2/M-phase arrest, an increased percentage of subG1 cells, and a substantially higher DNA damage induction. These results were confirmed in a second set of NER-deficient and -proficient cell lines with isogenic background. Finally, ascaridol was characterized for its ability to generate oxidative DNA damage. The drug led to a dose-dependent increase in intracellular levels of reactive oxygen species at cytotoxic concentrations, but only NER-deficient cells showed a strongly induced amount of 8-oxodG sites. In summary, ascaridol is a cytotoxic and DNA-damaging compound which generates intracellular reactive oxidative intermediates and which selectively affects NER-deficient cells. This could provide a new therapeutic option to treat cancer cells with mutations in NER genes. -- Highlights: ► Thousand-fold higher Ascaridol activity in NER-deficient versus proficient cells. ► Impaired repair of Ascaridol-induced oxidative DNA damage in NER-deficient cells. ► Selective activity of Ascaridol opens new therapy options in NER-deficient tumors.
60 APPLIED LIFE SCIENCES↗
Imaging Coherent Structural Dynamics with Ultrafast Electron Microscopy
Development of ultrafast electron and X-ray scattering methods has enabled direct routes to probing atomic-scale structural dynamics. This in turn has led to new insight into lattice responses to a variety of dynamic processes associated with phase transformations, electron-lattice correlations, and nanoscale mechanical motion, to name a few. Presently, the most wide-spread approaches involve using table-top, laser-driven electron-scattering chambers or femtosecond (fs) X-ray beamlines to probe dynamics in reciprocal space and, in many instances, over specimen regions that are large relative to unit-cell dimensions and discrete (atomic and nanoscale) structural and morphological defects (e.g., vacancies, line and screw dislocations, grain boundaries, interfaces, etc.). As a result, the transients monitored for relatively large-spot-size reciprocal-space measurements – typically some aspect of a Bragg reflection (intensity, position, width, shape) – may be comprised of a range of responses occurring within the probed region. To directly resolve the role of distinct morphologies and structural features on dynamics associated with the nucleation, emergence, evolution, and decay of coherent phenomena, one would ideally directly image the local, nanoscale behaviors and precisely correlate responses to the nature of the feature. Here, I will show how such effects can be directly probed with ultrafast electron microscopy (UEM). After a brief overview of the operating principles of UEM, I will discuss how we are using real-space imaging to directly visualize coherent structural dynamics in a variety of nanostructured and nanoscale materials.
47 OTHER INSTRUMENTATION↗
Sequential Symmetry-Breaking Events as a Synthetic Pathway for Chiral Gold Nanostructures with Spiral Geometries
Symmetry-breaking synthetic controls allow for nanostructure geometries that are counter to the underlying crystal symmetry of a material. If suitably applied, such controls provide the means to drive an isotropic metal along a growth pathway yielding a three-dimensional chiral geometry. In this work, we present a light-driven solution-based synthesis yielding helical gold spirals from substrate-bound seeds. The devised growth mode relies on three separate symmetry-breaking events ushered in by seeds lined with planar defects, a capping agent that severely frustrates early-stage growth, and the Coulombic repulsion that occurs when identically charged growth fronts collide. Together they combine to advance a growth pathway in which planar growth emanates from one side of the seed, advances to encircle the seed from both clockwise and counterclockwise directions, and then upon collision of the two growth fronts, sees one front rise above the other to realize a self-perpetuating three-dimensional spiral structure.
36 MATERIALS SCIENCE↗
Toughness and strength of nanocrystalline graphene
Pristine monocrystalline graphene is claimed to be the strongest material known with remarkable mechanical and electrical properties. However, graphene made with scalable fabrication techniques is polycrystalline and contains inherent nanoscale line and point defects—grain boundaries and grain-boundary triple junctions—that lead to significant statistical fluctuations in toughness and strength. These fluctuations become particularly pronounced for nanocrystalline graphene where the density of defects is high. Here we use large-scale simulation and continuum modelling to show that the statistical variation in toughness and strength can be understood with ‘weakest-link’ statistics. We develop the first statistical theory of toughness in polycrystalline graphene, and elucidate the nanoscale origins of the grain-size dependence of its strength and toughness. Lastly, our results should lead to more reliable graphene device design, and provide a framework to interpret experimental results in a broad class of two-dimensional materials.
36 MATERIALS SCIENCE↗
Green synthesis of ultrathin WS 2 nanosheets for efficient hydrogen evolution reaction
The synthesis of ultrathin WS 2 nanosheets and HAADF-STEM image highlighting the defect areas (edge defects and S line vacancies).
Chemistry↗