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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Isotopic fractionation of Kr and Xe implanted in solids at very low energies

Results on the implantation of Kr and Xe in W under closed system conditions at very low energies (50-500 eV) are reported. Investigation of the fraction of gas trapped as a function of time reveals the existence of competing trapping and release mechanisms, and analysis of recovered trapped gas and residual gas phases shows that both elemental and isotropic fractionation result from these mechanisms. It is determined that the mass dependence for the overall implantation process is at or near m exp 1, with heavier isotopes enriched in the implanted gas. This mass dependence is inferred to result from implantation and a combination of diffusive and gas sputtering release mechanisms. These results reaffirm the conclusion of Bernatowicz and Fahey (1986) that previously observed isotopic fractionation of Kr and Xe in carbonaceous material synthesized in electrical discharges owes its origin to low-energy ion implantation, and also suggest that this process may be relevant to incorporation of noble gases in early solar system materials. The implication of these results for noble gas mass spectrometry are discussed.

Bernatowicz, Thomas J.↗
NASA NTRS1993

Optimal design of composite hip implants using NASA technology

Using an adaptation of NASA software, we have investigated the use of numerical optimization techniques for the shape and material optimization of fiber composite hip implants. The original NASA inhouse codes, were originally developed for the optimization of aerospace structures. The adapted code, which was called OPORIM, couples numerical optimization algorithms with finite element analysis and composite laminate theory to perform design optimization using both shape and material design variables. The external and internal geometry of the implant and the surrounding bone is described with quintic spline curves. This geometric representation is then used to create an equivalent 2-D finite element model of the structure. Using laminate theory and the 3-D geometric information, equivalent stiffnesses are generated for each element of the 2-D finite element model, so that the 3-D stiffness of the structure can be approximated. The geometric information to construct the model of the femur was obtained from a CT scan. A variety of test cases were examined, incorporating several implant constructions and design variable sets. Typically the code was able to produce optimized shape and/or material parameters which substantially reduced stress concentrations in the bone adjacent of the implant. The results indicate that this technology can provide meaningful insight into the design of fiber composite hip implants.

Blake, T. A.↗
NASA NTRS1995

The effects of ion implantation on the tribology of perfluoropolyether-lubricated 440C stainless steel couples

The lubricating lifetime of thin films of a perfluoropolyether (PFPE) based on hexafluoropropene oxide in the presence of ion implanted 440C stainless steel is presented. Stainless steel discs, either unimplanted or implanted with N2, C, Ti, Ti + N2, or Ti + C had a thin film of PFPE (60-400 A) applied to them reproducibly (+/- 20 percent) and uniformly (+/- 15 percent) using a device developed for this study. The lifetimes of these films were quantified by measuring the number of sliding-wear cycles required to induce an increase in the friction coefficient from an initial value characteristic of the lubricated wear couple to a final, or failure value, characteristic of an unlubricated, unimplanted couple. The tests were performed in a dry nitrogen atmosphere (less than 1 percent RH) at room temperature using a 3 N normal load with a relative sliding speed of 0.05 m/s. The lubricated lifetime of the 440C couple was increased by an order of magnitude by implanting the disc with Ti. Ranked from most to least effective, the implanted species were: Ti; Ti+C; unimplanted; N2; C approximately equals Ti+N2. The mechanism postulated to explain these results involves the formation of a passivating or reactive layer which inhibits or facilitates the production of active sites. The corresponding surface microstructures induced by ion implantation, obtained using x-ray diffraction and conversion electron Mossbauer spectroscopy, ranked from most to least effective in enhancing lubricant lifetime were: amorphous Fe-Cr-Ti; amorphous Fe-Cr-Ti-C + TiC; unimplanted; epsilon-(Fe,Cr)(sub x)N, x = 2 or 3; amorphous Fe-Cr-C approximately equals amorphous Fe-Cr-Ti-N.

Shogrin, Bradley↗
NASA NTRS1996

Friction and Wear Properties of As-Deposited and Carbon Ion-Implanted Diamond Films

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 keV ion energy, resulting in a dose of 1.2 x 10(exp 17) carbon ions per cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40% relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and wear properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to lO(exp -8) mm(exp 3) N(exp -1) m(exp -1)) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4) mm(exp 7) N(exp -1) m(exp -1)) in ultrahigh vacuum. The carbon ion implantation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, non-diamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7) mm(exp 3) N(exp -1) m(exp-1)). Even in ultrahigh vacuum, the presence of the non-diamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6) mm(exp 3) N(exp -1) m(exp -1). Thus, the carbon ion-implanted, fine-grain diamond films can be effectively used as wear-resistant, self-lubricating coatings not only in air and dry nitrogen, but also in ultrahigh vacuum.

Miyoshi, Kazuhisa↗
NASA NTRS1997

Annealing Effects on the Surface Plasmon of MgO Implanted with Gold

Gold ion implantation was carried out with the energy of 1.1 MeV into (100) oriented MgO single crystal. Implanted doses are 1, 3, 6, 10 x 10(exp 16) ions/sq cm. The gold irradiation results in the formation of gold ion implanted layer with a thickness of 0.2 microns and defect formation. In order to form gold colloids from the as-implanted samples, we annealed the gold implanted MgO samples in three kinds of atmospheres: (1)Ar only, (2)H2 and Ar, and (3)O2 and Ar. The annealing over 1200 C enhanced the gold colloid formation which shows surface plasmon resonance band of gold. The surface plasmon bands of samples annealed in three kinds of atmospheres were found to be at 535 nm (Ar only), 524 nm(H2+Ar), and 560 nm (02+Ar), The band positions of surface plasmon can be reversibly changed by an additional annealing.

Ueda, A.↗
NASA NTRS1997

In Vivo Model to Test Implanted Biosensors for Blood pH

Biosensors for monitoring physiologic data continuously through telemetry are available for heart rate, respiration, and temperature but not for blood pH or ions affected by hydrogen ion concentration. A telemetric biosensor for monitoring blood pH on-line could be used to identify and manage problems in fluid and electrolyte metabolism, cardiac and respiratory function during space flight and the acid-base status of patients without the need for venipuncture in patients on Earth. Critical to the development of biosensors is a method for evaluating their performance after implantation. Mature rats, prepared with jugular, cannulas for repeated blood samples, were exposed to a gas mixture containing high levels of carbon dioxide (7%) in a closed environment to induce mild respiratory acidosis. Serial blood gas and pH measurements in venous blood were compared with electrical responses from sensors implanted in the subcutaneous tissue. Animals became slightly tachypneic after exposure to excess CO2, but remained alert and active. After 5 minutes, basal blood pH decreased from 7.404 +/- 0.013 to 7.289 +/- 0.010 (p less than 0.001)and PC02 increased from 45 +/- 6 to 65 +/- 4 mm. Hg (p les than 0.001). Thereafter pH and blood gas parameters remained stable. Implanted sensors showed a decrease in millivolts (mV) which paralleled the change in pH and averaged 5-6 mV per 0.1 unit pH. Implanted sensors remained sensitive to modest changes in tissue pH for one week. A system for inducing acidosis in rats was developed to test the in vivo performance of pH biosensors. The system provides a method which is sensitive, rapid and reproducible in the same and different animals with full recovery, for testing the performance of sensors implanted in subcutaneous tissues.

Arnaud, Sara B.↗
NASA NTRS2014

Solar Wind Implantation into Lunar Regolith: Hydrogen Retention in a Surface with Defects

Solar wind protons are implanted directly into the top 100 nm of the lunar near-surface region, but can either quickly diffuse out of the surface or be retained, depending upon surface temperature and the activation energy, U, associated with the implantation site. In this work, we explore the distribution of activation energies upon implantation and the associated hydrogen-retention times; this for comparison with recent observation of OH on the lunar surface. We apply a Monte Carlo approach: for simulated solar wind protons at a given local time, we assume a distribution of U values with a central peak, U(sub c) and width, U(sub w), and derive the fraction retained for long periods in the near-surface. We find that surfaces characterized by a distribution with predominantly large values of U (greater than 1 eV) like that expected at defect sites will retain implanted H (to likely form OH). Surfaces with the distribution predominantly at small values of U (less than 0.2 eV) will quickly diffuse away implanted H. However, surfaces with a large portion of activation energies between 0.3 eV less than U less than 0.9 eV will tend to be H-retentive in cool conditions but transform into H-emissive surfaces when warmed (as when the surface rotates into local noon). These mid-range activation energies give rise to a diurnal effect with diffusive loss of H at noontime.

regolith↗
DOE OSTI2015

PROGRESS IN CHARACTERIZATION OF PRECIPITATES AND DEFECT STRUCTURES IN Mg+ ION IMPLANTED CUBIC SILICON CARBIDE

This report describes the progress of our current experimental effort on Mg+ ion implanted 3C-SiC. Following our initial study [ ] that suggests possible formation of Mg2Si and MgC2 precipitates as well as tetrahedral voids in 24Mg+ ion implanted 3C-SiC, we have designed specific experiments to confirm the results and examine the inclusions and defects. Relatively low fluence (5.0×1015 24Mg+/cm2) implantation in 3C-SiC was performed to reduce defect concentrations and isolate individual defect features for characterization. In addition, 25Mg+ isotope was implanted in 3C-SiC to the same previously applied ion fluence (9.6×1016 ions/cm2) for atom probe tomography (APT) study of precipitates. Each set of the samples was annealed at 1573 K for 2, 6 and 12 h, respectively. The depth profiles of the implanted Mg were measured using secondary ion mass spectrometry (SIMS) before and after the annealing steps. The samples are currently being analyzed using transmission electron microscopy (TEM) and APT.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2012

Optima MDxt: A high throughput 335 keV mid-dose implanter

The continuing demand for both energy purity and implant angle control along with high wafer throughput drove the development of the Axcelis Optima MDxt mid-dose ion implanter. The system utilizes electrostatic scanning, an electrostatic parallelizing lens and an electrostatic energy filter to produce energetically pure beams with high angular integrity. Based on field proven components, the Optima MDxt beamline architecture offers the high beam currents possible with singly charged species including arsenic at energies up to 335 keV as well as large currents from multiply charged species at energies extending over 1 MeV. Conversely, the excellent energy filtering capability allows high currents at low beam energies, since it is safe to utilize large deceleration ratios. This beamline is coupled with the >500 WPH capable endstation technology used on the Axcelis Optima XEx high energy ion implanter. The endstation includes in-situ angle measurements of the beam in order to maintain excellent beam-to-wafer implant angle control in both the horizontal and vertical directions. The Optima platform control system provides new generation dose control system that assures excellent dosimetry and charge control. This paper will describe the features and technologies that allow the Optima MDxt to provide superior process performance at the highest wafer throughput, and will provide examples of the process performance achievable.

43 PARTICLE ACCELERATORS↗
NASA NTRS1987

Surgical evaluation of candidates for cochlear implants

The customary presentation of surgical procedures to patients in the United States consists of discussions on alternative treatment methods, risks of the procedure(s) under consideration, and potential benefits for the patient. Because the contents of the normal speech signal have not been defined in a way that permits a surgeon systematically to provide alternative auditory signals to a deaf patient, the burden is placed on the surgeon to make an arbitrary selection of candidates and available devices for cochlear prosthetic implantation. In an attempt to obtain some information regarding the ability of a deaf patient to use electrical signals to detect and understand speech, the Good Samaritan Hospital and Neurological Sciences Institute cochlear implant team has routinely performed tympanotomies using local anesthesia and has positioned temporary electrodes onto the round windows of implant candidates. The purpose of this paper is to review our experience with this procedure and to provide some observations that may be useful in a comprehensive preoperative evaluation for totally deaf patients who are being considered for cochlear implantation.

Non-NASA Center↗
DOE OSTI2015

Synthesis of layer-tunable graphene: A combined kinetic implantation and thermal ejection approach

Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition (CVD) method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fluence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process is observed that the entire implanted carbon atoms can be expelled towards the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confirmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more flexibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Suppression of boron diffusion using carbon co-implantation in DRAM

Highlights: • The impact of Ge + C co-implantation on dopant diffusion was investigated. • DIBL and V{sub TH} variation was improved by Ge + C co-implantation. • The V{sub TH} mismatch and the write characteristics were improved in the DRAM device. - Abstract: In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (V{sub TH}) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the V{sub TH} mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Correlated characterization of 20 Ne-implanted targets using nuclear reaction analysis, Rutherford backscattering spectrometry, and ion transport modeling

In this article, we present the preparation and characterization of a large sample of implanted noble gas targets for use in precision nuclear astrophysics measurements with intense proton beams. Tantalum and titanium backings were prepared using wet-acid etching, outgassed via resistive heating, and implanted with 20 Ne + beams from differing ion sources. These experimental targets were investigated using both nuclear reaction analysis techniques on the 1169-keV resonance in 20 Ne(p, $\gamma$) 21 Na and Rutherford backscattering spectrometry analysis with 2-MeV α-particle beams. Results from these analyses reveal small target-to-target variations in stoichiometry, while exhibiting excellent agreement independent of ion-beam analysis method. We also present a self-consistent validation of the nuclear reaction analysis results using ion transport simulations in TRIM-2013 that rely on input parameters from SIMNRA scattering-yield fits to Rutherford backscattering spectra. In addition to a complete description of the implantation profile, this analysis method provides an alternate solution for characterizing a large sample of implanted targets when no suitable resonances are available for nuclear reaction analysis.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

A methodology for customizing implantation profiles of light ions using a single thin foil energy degrader

We report a method was developed to quantify the spatial distribution and implantation depth of energy-degraded light ions with a thin foil rotating energy degrader for use during multiple ion beam irradiation. The methodology covers three physical phenomena: ions passing through the thin foil, ions travelling through the vacuum to the target, and ion implantation into the target, and accounts for the distribution of ions both in depth and in plane. The processes of energy straggling and scattering were calculated using SRIM. The effects of raster-scanning, and the geometry of the system were implemented in scripts handling the SRIM output files. Elastic backscattering (EBS) using 2.38 MeV H+ protons was used to measure the helium depth profiles after implantation with and without thin foil energy degradation. Defect analysis with transmission electron microscopy confirmed the implantation profiles measured with EBS and calculated with SRIM.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

The effect of helium implantation on the deformation behaviour of tungsten: X-ray micro-diffraction and nanoindentation

Here, the effect of helium-implantation-induced defects on deformation behaviour is examined by comparing spherical nano-indents in unimplanted and helium-implanted regions of a tungsten single crystal. Helium-implantation increases hardness and causes large pileups. 3D-resolved X-ray micro-diffraction uniquely allows examination of the complex lattice distortions beneath specific indents. In the ion-implanted material we find reduced lattice rotations and residual strains due to indentation, indicating a more confined plastic zone. Together, our observations suggest that helium-induced defects initially act as efficient obstacles to dislocation motion, but are weakened by the subsequent passage of dislocations, causing a reduction in work hardening capacity.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO 2 /c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm -2 ) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV oc ) values of 730 mV with J o values of 2 fA/cm 2 . Samples doped with B 2 H 6 gave iV oc values of 690 mV and J o values of 24 fA/cm 2 , outperforming BF 3 doping, which gave iV oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.

14 SOLAR ENERGY↗
DOE OSTI2012

Si film separation obtained by high energy proton implantation

High energy protons implantation in the 1-1.5 MeV range can be used to detach free-standing thin silicon films with thickness between 15 and 30 {mu}m. Recently, we showed that Si orientation has a strong effect on the layer separation threshold fluence and efficiency. While complete delamination of (111)Si films is achieved, (100)Si films separation is more challenging due to blistering phenomena or partial separation of the implanted layer. In this work, we study the fracture mechanism in (100) and (111)Si after high energy implantation in order to understand the origin of such a behavior. We notably point out that fracture precursor defects, i.e. the platelets, preferentially form on (111) planes, as a consequence of the low strain level in the damaged region in our implantation conditions. Fracture therefore propagates easily in (111)Si, while it requires higher fluence to overcome unfavorable precursors orientation and propagate in (100)Si.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Plasma immersion ion implantation for reducing metal ion release

Plasma immersion ion implantation of Nitrogen and Oxygen on CoCrMo alloys was carried out to improve the tribological and corrosion behaviors of these biomedical alloys. In order to optimize the implantation results we were carried experiments at different temperatures. Tribocorrosion tests in bovine serum were used to measure Co, Cr and Mo releasing by using Inductively Coupled Plasma Mass Spectrometry analysis after tests. Also, X-ray Diffraction analysis were employed in order to explain any obtained difference in wear rate and corrosion tests. Wear tests reveals important decreases in rate of more than one order of magnitude for the best treatment. Moreover decreases in metal release were found for all the implanted samples, preserving the same corrosion resistance of the unimplanted samples. Finally this paper gathers an analysis, in terms of implantation parameters and achieved properties for industrial implementation of these treatments.

36 MATERIALS SCIENCE↗