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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Characterization of Low Gain Avalanche Detector Prototypes’ Response to Gamma Radiation

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in a single pad configuration, 2 × 2 arrays, and related p-i-n diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations, and for the arrays, a variety of inter-pad distances and distances from the active area to the edge. Measurements of capacitance versus voltage and leakage current versus voltage have been made to compare pre- and post-irradiation characteristics in gain layer depletion voltage, full bulk depletion voltage, and breakdown voltage. Conclusions are drawn regarding the effects of the gammas on both surface and interface states and on their contribution to acceptor removal through non-ionizing energy loss from Compton electrons or photoelectrons. Comparison of the performances of members of the set of devices can be used to optimize gain layer parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Design and characterization of a phonon-mediated cryogenic particle detector with an eV-scale threshold and 100 keV-scale dynamic range

We present the design and characterization of a cryogenic phonon-sensitive Si detector exploiting the Neganov-Tromov-Luke effect to detect single-charge excitations. This device achieved 2.65(2) eV phonon energy resolution when operated without a voltage bias across the crystal and a corresponding charge resolution of 0.03 electron-hole pairs at 100 V bias. With a continuous-readout data acquisition system and an oine optimum-filter trigger, we obtain a 9.2 eV threshold with a trigger rate of the order of 20 Hz. The detector's energy scale is calibrated up to 120 keV using an energy estimator based on the pulse area. The high performance of this device allows its application to different fields where excellent energy resolution, low threshold, and large dynamic range are required, including dark matter searches, precision measurements of coherent neutrino-nucleus scattering, and ionization yield measurements.

Ren, R↗
NASA NTRS2016

High Bandwidth Optical Links for Micro-Satellite Support

A method, systems, apparatus and device enable high bandwidth satellite communications. An onboard tracking detector, installed in a low-earth orbit satellite, detects a position of an incoming optical beam received/transmitted from a first ground station of one or more ground stations. Tracker electronics determine orientation information of the incoming optical beam based on the position. Control electronics receive the orientation information from the tracker electronics, and control a waveguide drive electronics. The waveguide drive electronics control a voltage that is provided to an electro-optic waveguide beam steering device. The electro-optic waveguide beam steering device steers an outgoing optical beam to one of the one or more ground stations based on the voltage.

Chao, Tien-Hsin↗
DOE OSTI2020

Design and Characterization of a Phonon-Mediated Cryogenic Particle Detector with an eV-Scale Threshold and 100 keV-Scale Dynamic Range

We present the design and characterization of a cryogenic phonon-sensitive Si detector exploiting the Neganov-Trofimov-Luke effect to detect single-charge excitations. This device achieved 2.65(2) eV phonon energy resolution when operated without a voltage bias across the crystal and a corresponding charge resolution of 0.03 electron-hole pairs at 100 V bias. With a continuous-readout data acquisition system and an offline optimum-filter trigger, we obtain a 9.2 eV threshold with a trigger rate of the order of 20 Hz. The detector's energy scale is calibrated up to 120 keV using an energy estimator based on the pulse area. The high performance of this device allows its application to different fields where excellent energy resolution, low threshold, and large dynamic range are required, including dark matter searches, precision measurements of coherent neutrino-nucleus scattering, and ionization yield measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Active Region Extent Assessment with X-rays (AREA-X)

The development of semiconductor sensors for new particle tracking detectors places increasing limits on sensor characteristics such as uniformity, size and shape of inefficient areas and size of active compared to inactive sensor areas. Accurately assessing these relatively subtle effects requires either measurements in particle beams or the modification of samples to be used in dedicated laser test setups. Active Region Extent Assessment with X-rays (AREA-X) has been developed as an alternative method for the fast, efficient and precise study of the active area of a semiconductor sensor. It uses a monochromatic, micro-focused X-ray beam with a 10–20 keV energy range as provided by several synchrotron beam lines and uses the photo current induced in the sensor to measure the depth of the responsive sensor volume. It can be used to study local inhomogeneities or inefficiencies, the overall extent of the active sensor volume and its shape and its localised application, which makes the need to gather statistics over a large area unnecessary, allowing for fast readout, which enables studies of the sensor behaviour at a range of external parameters, e.g. temperature or applied bias voltage. This paper presents the measurement concept and technical setup of the measurement, results from initial measurements as well as capabilities and limitations of the method.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

LGADs (Low-Gain Avalanche Diodes or Detectors) are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the LGAD paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While LGADs are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of LGADs: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to the breakdown voltage. Finally, the signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.

47 OTHER INSTRUMENTATION↗
NASA NTRS1991

High voltage plasma sheath analysis related to TSS-1

On the first mission of the Tethered Satellite System (TSS-1), a 1.8 m diameter spherical satellite will be deployed a distance of 20 km above the space shuttle Orbiter on an insulated conducting tether. The satellite will be held at electric potentials up to 5000 volts positive with respect to the ambient plasma. Due to the passage of the conducting tether through the Earth's magnetic field, an emf will be created, driving electrons down the tether to the orbiter, out through an electron gun into the ionosphere and back into the positive biased satellite. Instrumentation on the satellite will measure electron flow to the surface at several locations, but these detectors have a limited range of acceptance angle. The problem addressed herein is the determination of the electron current distribution over the satellite surface and the angle of incidence of the incoming electrons relative to the surface normal.

Sheldon, John W.↗
NASA NTRS2009

Polarimetric Imaging using Two Photoelastic Modulators

A method of polarimetric imaging, now undergoing development, involves the use of two photoelastic modulators in series, driven at equal amplitude but at different frequencies. The net effect on a beam of light is to cause (1) the direction of its polarization to rotate at the average of two excitation frequencies and (2) the amplitude of its polarization to be modulated at the beat frequency (the difference between the two excitation frequencies). The resulting modulated optical light beam is made to pass through a polarizing filter and is detected at the beat frequency, which can be chosen to equal the frame rate of an electronic camera or the rate of sampling the outputs of photodetectors in an array. The method was conceived to satisfy a need to perform highly accurate polarimetric imaging, without cross-talk between polarization channels, at frame rates of the order of tens of hertz. The use of electro-optical modulators is necessitated by a need to obtain accuracy greater than that attainable by use of static polarizing filters over separate fixed detectors. For imaging, photoelastic modulators are preferable to such other electrio-optical modulators as Kerr cells and Pockels cells in that photoelastic modulators operate at lower voltages, have greater angular acceptances, and are easier to use. Prior to the conception of the present method, polarimetric imaging at frame rates of tens of hertz using photoelastic modulators was not possible because the resonance frequencies of photoelastic modulators usually lie in the range from about 20 to about 100 kHz.

Wang, Yu↗
DOE OSTI2020

Fault-tolerant grid frequency measurement algorithm during transients

Many critical electric grid operations rely on accurate grid frequency measurements. Unfortunately, the measurement accuracy can be easily undermined by power system transient faults. During a power system transient fault, the power grid voltages and currents are usually highly distorted by high-frequency components. What is worse, the power grid signals could have discontinuity during some system transient faults such as phase angle jump, and the discontinuity could result in large measurement errors to state-of-the-art grid measurement algorithms. In this study, a fault-tolerant grid frequency measurement algorithm during transients is proposed. The new algorithm consists of two stages. The first stage is a transient detector, and it can detect the occurrence of system transient faults instantaneously. The second stage is the intelligent frequency estimator, and it will adapt its measurements according to the transient detector. The performance of the algorithm is evaluated under different steady-state and transient conditions. Both dependability and security of the fault-tolerant algorithm are assessed by using PSCAD simulation data and IEEE Standard test data.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Identification and mitigation of memory block timing issue in ITk ABCStar during ASIC production

The ABCStar is a mixed-signal front-end readout ASIC for the strips sensor portion of the ATLAS ITk detector being developed as part of the High-Luminosity LHC upgrade. In pre-production testing, a subtle design flaw was uncovered in the ABCStar that was reducing wafer yields in some manufactured lots from the expected 90% to as low as 2%. The root cause was determined to be a timing issue in the logic synthesized to control previously silicon proven memory blocks re-used for this ASIC. The solutions proposed included manufacturing process changes by the wafer foundry, changes to the operating parameters for the ABCStar in the detector, and the possibility that a redesign might be required. The two mitigation efforts were undertaken in parallel, with the process modification route a less desirable solution since already manufactured wafers would need to be scrapped in favour of the new ones. Based on a knowledge of the existing process, and testing done on the worst performing wafers, it was proposed that raising the core operating voltage of the ABCStar from 1.20V to 1.25V could address the timing issue by sufficiently speeding up its transistors. An extensive testing program that included the effects of temperature and radiation expected over the lifetime of the ITk detector was conducted to validate that approach. Those tests and studies proved that even the worst performing wafers would have yields over 80% with the 1.25V core voltage, and neither the modified process nor redesign would be required for ensuring reliable operation of the ITk. Based on testing, a further timing mitigation was implemented to provide an additional margin of reliability by increasing the duty cycle of the clock to the ABCStar. Testing of all ABCStar wafers has been completed and the production of the detector modules using these ASICs is now well underway as a result of the efforts detailed herein.

FOS: Physical sciences↗
DOE OSTI2023

Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current

Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO 3 single-crystal substrates by solution reaction at a low temperature of ~200 o C. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm 2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm 2 , corresponding to the highest photoresponsivity of ~4.306×10 -3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.

36 MATERIALS SCIENCE↗
NASA NTRS2005

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.

semiconducting↗
DOE OSTI2025

The AMACStar ASIC for the HL-LHC ATLAS ITk Strip detector: design, verification, testing, and quality assurance

For the high-luminosity upgrade to the LHC (HL-LHC), the ATLAS detector at CERN requires an all-new inner detector, the Inner Tracker (ITk). The ITk Strip subdetector is made up of silicon modules, which include three types of radiation-hard ASICs. One of these is the Autonomous Monitor and Control (AMAC). The AMAC is manufactured by Global Foundries using 130 nm CMOS8RF DM technology and is approximately 3 by 5 mm in size. This ASIC autonomously monitors the temperatures, voltages, and currents in the module components while controlling critical values in order to prevent these quantities from reaching dangerous levels. The final design, AMACStar, was verified, tested, and ensured to perform all necessary functions. A quality control procedure using an in-house probe station set-up was developed in order to ensure that every individual chip on each wafer of AMACStars required by the ITk Strip project met performance requirements. The average per wafer yield of usable AMACStars is 92.33%, exceeding the design-specific 90% yield estimated for project costing. This estimate was based on actual yields for similar designs in this process.

Analogue electronic circuits↗
NASA NTRS2007

NASA Tech Briefs, March 2007

Topics include: Advanced Systems for Monitoring Underwater Sounds; Wireless Data-Acquisition System for Testing Rocket Engines; Processing Raw HST Data With Up-to-Date Calibration Data; Mobile Collection and Automated Interpretation of EEG Data; System for Secure Integration of Aviation Data; Servomotor and Controller Having Large Dynamic Range; Digital Multicasting of Multiple Audio Streams; Translator for Optimizing Fluid-Handling Components; AIRSAR Web-Based Data Processing; Pattern Matcher for Trees Constructed From Lists; Reducing a Knowledge-Base Search Space When Data Are Missing; Ground-Based Correction of Remote-Sensing Spectral Imagery; State-Chart Autocoder; Pointing History Engine for the Spitzer Space Telescope; Low-Friction, High-Stiffness Joint for Uniaxial Load Cell; Magnet-Based System for Docking of Miniature Spacecraft; Electromechanically Actuated Valve for Controlling Flow Rate; Plumbing Fixture for a Microfluidic Cartridge; Camera Mount for a Head-Up Display; Core-Cutoff Tool; Recirculation of Laser Power in an Atomic Fountain; Simplified Generation of High-Angular-Momentum Light Beams; Imaging Spectrometer on a Chip; Interferometric Quantum-Nondemolition Single-Photon Detectors; Ring-Down Spectroscopy for Characterizing a CW Raman Laser; Complex Type-II Interband Cascade MQW Photodetectors; Single-Point Access to Data Distributed on Many Processors; Estimating Dust and Water Ice Content of the Martian Atmosphere From THEMIS Data; Computing a Stability Spectrum by Use of the HHT; Theoretical Studies of Routes to Synthesis of Tetrahedral N4; Estimation Filter for Alignment of the Spitzer Space Telescope; Antenna for Measuring Electric Fields Within the Inner Heliosphere; Improved High-Voltage Gas Isolator for Ion Thruster; and Hybrid Mobile Communication Networks for Planetary Exploration.

Source record↗
DOE OSTI2020

Study of CMOS strip sensor for future silicon tracker

Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1989

High resolution color band pyrometer ratioing

The sensing head of a two-color band ratioing pyrometer of a known type using a fiber optic cable to couple radiation to dual detector photodiodes is improved to have high spatial resolution by focusing the radiation received through an objective lens (i.e., by focusing the image of a target area) onto an opaque sheet spaced in front of the input end of the fiber optic cable. A two-mil hole in that sheet then passes radiation to the input end of the cable. The detector has two channels, one for each color band, with an electronic-chopper stabilized current amplifier as the input stage followed by an electronic-chopper stabilized voltage amplifier.

Bickler, Donald B.↗
NASA NTRS2009

Wide-Range Temperature Sensors with High-Level Pulse Train Output

Two types of temperature sensors have been developed for wide-range temperature applications. The two sensors measure temperature in the range of -190 to +200 C and utilize a thin-film platinum RTD (resistance temperature detector) as the temperature-sensing element. Other parts used in the fabrication of these sensors include NPO (negative-positive- zero) type ceramic capacitors for timing, thermally-stable film or wirewound resistors, and high-temperature circuit boards and solder. The first type of temperature sensor is a relaxation oscillator circuit using an SOI (silicon-on-insulator) operational amplifier as a comparator. The output is a pulse train with a period that is roughly proportional to the temperature being measured. The voltage level of the pulse train is high-level, for example 10 V. The high-level output makes the sensor less sensitive to noise or electromagnetic interference. The output can be read by a frequency or period meter and then converted into a temperature reading. The second type of temperature sensor is made up of various types of multivibrator circuits using an SOI type 555 timer and the passive components mentioned above. Three configurations have been developed that were based on the technique of charging and discharging a capacitor through a resistive element to create a train of pulses governed by the capacitor-resistor time constant. Both types of sensors, which operated successfully over the wide temperature range, have potential use in extreme temperature environments including jet engines and space exploration missions.

Hammoud, Ahmad↗
NASA NTRS1977

Sun direction detection system

One of the detectors is an illumination detector consisting of two spaced apart elongated strips with a strip of cadmium sulphide (Cds) deposited therebetween. Whenever the line image impinges the CdS strip, the resistance between the two other strips is relatively low, while being high when the line image is outside the field of view of the illumination detector. Also included is a sun angle detector which consists of a vapor deposited resistor strip connected at one end to plus 10v and at the other end to minus 10v. Spaced apart from the resistor strip is an elongated strip of low resistance material acting as an output strip, with a CdS strip between the two strips. When the line image is within the field of view of the sun angle detector, the output voltage at the output strip depends on the position of the line image across the sun angle detector.

Schmidt, L. F.↗