Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Ge”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Impurity color centers in quartz and trapped electron dating - Electron spin resonance, thermoluminescence studies.

Investigation of impurity-related electron-hole traps that are known to be sensitive to ionizing radiations. Electron spin resonance (ESR) equivalent natural doses were determined for the Al hole trap in virgin specimens; the doses agreed with estimates based on published data for the Ge electron trap. The 0.17 deg/sec 180 and 300 C thermoluminescence (TL) peaks in natural specimens were found to have activation energies approximately correct for the Ge trap. The 300 C peak was also found to be correlated with annealing of the Ge electron resonance in gamma-irradiated, step-annealed specimens. Although the 300 C peak occurs in virgin specimens, the corresponding natural Ge electron resonance was not observed.

Mcmorris, D. W.↗
NASA NTRS1974

Atom movements occurring at solid metal-semiconductor interfaces

Solid metal-semiconductor interfaces often undergo chemical reaction at rather low temperatures, in some cases not much above room temperature. After some general discussion of these reactions, more detailed consideration is given to simple noncompound-forming systems, and, in particular, to the Si-Al, Ge-Al, and Si-Au systems. Diffusive transport of Si or Ge in these solid metallizations is very rapid, though the converse process, diffusion of metal in solid Si or Ge, is usually so slow as to be negligible. The interface reaction itself is less well understood but is becoming controllable in intrinsically favorable cases like Ge-Al and in other cases by more sophisticated means.

Mccaldin, J. O.↗
NASA NTRS1976

Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.

Bratt, P. R.↗
NASA NTRS1977

Elevated-temperature tensile and creep properties of several ferritic stainless steels

The elevated-temperature mechanical properties of several ferritic stainless steels were determined. The alloys evaluated included Armco 18SR, GE 1541, and NASA-18T-A. Tensile and creep strength properties at 1073 and 1273 K and residual room temperature tensile properties after creep testing were measured. In addition, 1273 K tensile and creep tests and residual property testing were conducted with Armco 18SR and GE 1541 which were exposed for 200 hours to a severe oxidizing environment in automotive thermal reactors. Aside from the residual tensile properties for Armco 18SR, prior exposure did not affect the mechanical properties of either alloy. The 1273 K creep strength parallel to the sheet-rolling direction was similar for all three alloys. At 1073 K, NASA-18T-A had better creep strength than either Armco 18SR or GE 1541. NASA-18T-A possesses better residual properties after creep testing than either Armco 18SR or Ge 1541.

Whittenberger, J. D.↗
NASA NTRS1980

Improved ceramic heat exchanger materials

The development and evaluation of materials for potential application as heat exchanger structures in automotive gas turbine engines is discussed. Test specimens in the form of small monolithic bars were evaluated for thermal expansion and dimensional stability before and after exposure to sea salt and sulfuric acid, followed by short and long term cycling at temperatures up to 1200 C. The material finally selected, GE-7808, consists of the oxides, ZrO2-MgO-Al2O3-S1O2, and is described generically as ZrMAS. The original version was based on a commercially available cordierite (MAS) frit. However, a clay/talc mixture was demonstrated to be a satisfactory very low cost source of the cordierite (MAS) phase. Several full size honeycomb regenerator cores, about 10.2 cm thick and 55 cm diameter were fabricated from both the frit and mineral versions of GE-7808. The honeycomb cells in these cores had rectangular dimensions of about 0.5 mm x 2.5 mm and a wall thickness of approximately 0.2 mm. The test data show that GE-7808 is significantly more stable at 1100 C in the presence of sodium than the aluminosilicate reference materials. In addition, thermal exposure up to 1100 C, with and without sodium present, results in essentially no change in thermal expansion of GE-7808.

Rauch, H. W.↗
NASA NTRS1981

Present growth technology of silicon germanium alloys and possible advantages of microgravity growth

The growth technology of Silicon-germanium (Si-Ge) alloys and the possible advantages of growth in microgravity is reviewed. The Si-Ge alloys have a continuous variation of bandgap energy from the germanium bandgap to the silicon bandgap. The unusual two slope behavior of Eg versus composition is due to the differences in the conduction band structure between Si and Ge. Below 17% (atomic), the germanium band structure dominates; and above it, the bands are "silicon like". It is found that the growth of Si-Ge alloys in microgravity is very attractive. In particular, the float zone method, in which a liquid zone of controlled starting composition, used to grow a large amount of useful alloy crystal. Large temperature gradients and relatively flat growth interfaces are necessary to obtain homogeneous crystal growth.

Stafsudd, O. M.↗
NASA NTRS1984

Experimental and theoretical study of the formation of the 2AB, 3AB, and 9A meteorite chemical groups from the parent liquid

Segregation of solute elements was measured in plane front solidified Fe-Ni-S-P alloys of meteoritic composition containing Ir, Ge and/or Cu. The Ni and P contents reach maximum values of 10.5 wt% and 1.1 wt%, respectively, in austenite (taenite) at the end of primary solidification. Distribution coefficients of Ni, P, Ir, Ge and Cu were determined from the solidified alloys. The distribution coefficients vary with the S and P content of the liquid. In addition the distribution coefficients of Ni, P, Ir and Ge increase and the distribution coefficient of Cu decreases with the S to P ratio. Equations that describe the concentration dependence of the distribution coefficients were developed and used to calculate solute redistribution during the solidification of IIAB, IIIAB and IVA parent bodies. The calculated P vs Ni, Ir vs Ni and Ge vs Ni trends are in good agreement with the observed meteoritic data. Since the calculated value of the maximum solid solubility of P agrees well with the observed maximum P composition data for IIAB and IIIAB irons, it is concluded that complete crystallization of the parent liquids of IIAB and IIIAB had occurred before any fragmentation of the solidified body.

Sellamuthu, R.↗
NASA NTRS1987

Resistive synaptic interconnects for electronic neural networks

The use of the alpha-Ge(1-x):Al(x) and alpha-Ge(1-x):Cu(x) alloys and Pt/Al2O3 cermet thin films as resistive interconnects for binary synaptic memory arrays is evaluated. The fabrication of the 10-20 microns long, 10 microns wide, and 0.1 micron thick interconnects from the alloys and cermet is described. The current-voltage and switching characteristics of the as-deposited films and the patterned test structure are studied. The resistivity, uniformity, stability, and compatibility of the interconnects are examined. It is observed that alpha-Ge(1-x):Cu(x) alloys have a wide resistivity range and low temperature coefficients of resistance; however, their long-term stability is limited due to their low crystallization temperature. It is detected that the alpha-Ge(1-x):Al(x) alloys have higher crystallization temperatures and their resistivity is not greatly affected by large changes in metal content. The Pt/Al2O3 samples display excellent stability, easy fabrication, and control of resistivity with metal content.

Lamb, J. L.↗
NASA NTRS1988

Development of FIR arrays with integrating amplifiers

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Young, Erick T.↗
NASA NTRS1991

Progress toward the development of dual junction GaAs/Ge solar cells

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Lillington, D. R.↗
NASA NTRS1995

Analysis of LDEF experiment AO187-2 chemical and isotopic measurements of micrometeoroids by secondary ion mass spectrometry

#Experiment AO187-2, that was flown on board the Long Duration Exposure Facility(LDEF), was designed to measure the chemical and isotopic compositions of interplanetary dust impinging on the spacecraft from outer space. Information on the nature and composition of orbital debris was also anticipated. The spacecraft maintained a constant orientation with respect to its velocity vector thereby defining leading and trailing edges that faced respectively into and away from the direction of motion. Arrays of individual capture cells each 80.8 sq cm in size and totaling 237 in number were exposed on both the leading and trailing edges of LDEF. Each cell consisted of a pure Ge target surface slightly separated from a thin (2.5 micrometers) metallized plastic 'entrance foil.' The basic concept was that incoming projectiles would penetrate the foil, strike the Ge target plate at high velocity producing a vapor-liquid cloud that would re-deposit material on the underside of the plastic foil. This material would then be analyzed using the sensitive surface analysis technique of Secondary Ion Mass Spectrometry (SIMS). In practice, most of the plastic entrance foils failed during the extended period of orbital exposure probably due to a combination of UV embrittlement, large densities of impact events and (for the leading edge) the effects of atomic oxygen erosion in orbit. However the foils failed gradually and most remained in place on the capture cells for a significant fraction of the duration of the flight . Because most of the impactors were small (less than 10 micrometers) they were heated and dispersed in traversing the entrance foils producing clouds of molten droplets and vapor that produced easily identifiable 'extended impacts' on the Ge target plates. Fortunately, it proved possible to make ion probe measurements of projectile compositions from material deposited on the Ge in the extended impact structures.

Zinner, Ernst↗
NASA NTRS1996

Characterization of SiGe/Ge heterostructures and graded layers using variable angle spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry (VASE) has been used to characterize Si(x)Ge(1-x)/Ge superlattices (SLs) grown on Ge substrates and thick Si(x)Ge(1-x)/Ge heterostructures grown on Si substrates. Our VASE analysis yielded the thicknesses and alloy compositions of all layers within the optical penetration depth of the surface. In addition, strain effects were observed in the VASE results for layers under both compressive and tensile strain. Results for the SL structures were found to be in close agreement with high resolution x-ray diffraction measurements made on the same samples. The VASE analysis has been upgraded to characterize linearly graded Si(x)Ge(1-x) buffer layers. The algorithm has been used to determine the total thickness of the buffer layer along with the start and end alloy composition by breaking the total thickness into many (typically more than 20) equal layers. Our ellipsometric results for 1 (mu)m buffer layers graded in the ranges 0.7 less than or = x less than or = 1.0, and 0.5 less than or = x less than or = 1.0 are presented, and compare favorably with the nominal values.

Croke, E. T.↗
NASA NTRS2003

Propulsion Health Monitoring for Enhanced Safety

This report presents the results of the NASA contract Propulsion System Health Management for Enhanced Safety performed by General Electric Aircraft Engines (GE AE), General Electric Global Research (GE GR), and Pennsylvania State University Applied Research Laboratory (PSU ARL) under the NASA Aviation Safety Program. This activity supports the overall goal of enhanced civil aviation safety through a reduction in the occurrence of safety-significant propulsion system malfunctions. Specific objectives are to develop and demonstrate vibration diagnostics techniques for the on-line detection of turbine rotor disk cracks, and model-based fault tolerant control techniques for the prevention and mitigation of in-flight engine shutdown, surge/stall, and flameout events. The disk crack detection work was performed by GE GR which focused on a radial-mode vibration monitoring technique, and PSU ARL which focused on a torsional-mode vibration monitoring technique. GE AE performed the Model-Based Fault Tolerant Control work which focused on the development of analytical techniques for detecting, isolating, and accommodating gas-path faults.

Butz, Mark G.↗
NASA NTRS1993

Optical Properties of Semiconductor-Metal Composite Thin Films in the Infrared Region

Germanium:Silver (Ge:Ag) composite thin films having different concentrations of Ag, ranging from 7% to 40% have been prepared by dc co-sputtering of Ge an Ag and the films' surface morphology and optical properties have been characterized using transmission electron microscopy (TEM) and infrared spectrophotometry. It is seen that while the films containing lower concentrations of Ag have island-like morphology (i.e. Ag particles distributed in a Ge matrix), the higher metallic concentration films tend to have symmetric distribution of Ag and Ge.

Films Germanium Silver↗
NASA NTRS1994

Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup +) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4% and 1.5% at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.

beam epitaxy↗
NASA NTRS1972

Hybrid TE panel test results.

Test results are presented for a nine couple (3 x 3 array) thermoelectric panel of hybrid thermocouples. In the hybrid couple, a hollow cylinder of p-type Si-Ge is used to encapsulate a segmented PbTe/Si-Ge n-leg. The hybrid couple is predicted to offer a 10 to 15% improvement in performance relative to all Si-Ge couples. The efficiency, output power, and internal resistance of the panel, as well as the resistances of the individual hybrid couples, are presented as a function of test time covering a period of more than 2600 hours. Initial test results indicated hybrid couple performance consistent with design predictions. However, the 10 to 15% improvement over all-Si-Ge couples demonstrated initially by the hybrid couple was offset by the high resistance that developed following a thermal cycle due to heater failure after 600 hours of testing.

Bifano, W. J.↗
NASA NTRS1974

A Ge/Li/ spectrometer for gamma ray astronomy

A space-borne instrument to measure the spectral and temporal characteristics of astronomical gamma rays in the .05 to 10 Mev energy range is described. The spectrometer consists of four 60 cc Ge(Li) detectors with an energy resolution of 2.5 Kev (FWHM) at 1.33 Mev. The Ge(Li) detectors are actively shielded with CsI(Na) for angular collimation and background reduction. Cooling of the Ge(Li) detectors to 88 K for orbital lifetimes of up to two years is provided by a two-stage solid subliming refrigerator.

Hicks, D. B.↗
NASA NTRS1974

Geochemical affinities of cobalt and germanium toward metal, silicate, and sulfide phases at high temperature

Hydrothermal studies indicate that Co and Ge are strongly siderophile when metallic iron is in equilibrium with olivine at 900 C and 500 bars. If the metal is replaced by troilite (FeS), Ge is strongly lithophile whereas Co tends to concentrate in the sulfide phase. If iron meteorites were formed in a core derived from the sulfide phase, they would be depleted in Ge but retain Co.

Wai, C. M.↗