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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

In Situ MOVPE Smoothing of Acoustically Spalled GaAs for Substrate Reuse

High material costs, especially for substrates, have limited the widespread adoption of III-V photovoltaics. A potential to reduce this cost is to reuse the III-V substrate via acoustic spalling, however this technique can leave a rough surface, hindering subsequent device performance. This research investigates the potential of using metalorganic vapor-phase epitaxy growth as a buffer layer to smooth the surface of acoustically spalled germanium and gallium arsenide (GaAs) substrates for improved III-V photovoltaic cell yield and performance, while retaining the maximum number of reuses of a substrate. Three potential smoothing layers were explored: lightly doped C:GaAs, highly doped Se:GaInP, and lightly doped Se:GaInP. C:GaAs showed the most promise as a smoothing layer, while Se:GaInP tended to conform to the underlying morphology, potentially increasing roughness in some areas. Utilizing 5 ..mu..m of C:GaAs as a planarizing buffer increased the average efficiency (without an antireflection coating) from an as-spalled baseline from 2.1% to 4.9% and performing a 5-min 30 degrees C 8:1:1 H2SO4:H2O2:H2O etch prior to a 5 ..mu..m of C:GaAs as a planarizing buffer further increased efficiency to 11.1%.

14 SOLAR ENERGY↗
DOE OSTI2020

Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals

Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable synthesis, enable applications in which inexpensive high-performance semiconductors are needed. Synthesis science breakthroughs have been key to the realization of quantum dot technologies, but important group III-group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized with existing approaches. The high-temperature molten salt colloidal synthesis introduced in this work enables the preparation of previously intractable colloidal materials. We directly nucleated and grew colloidal quantum dots in molten inorganic salts by harnessing molten salt redox chemistry and using surfactant additives for nanocrystal shape control. Synthesis temperatures above 425°C are critical for realizing photoluminescent GaAs quantum dots, which emphasizes the importance of high temperatures enabled by molten salt solvents. We generalize the methodology and demonstrate nearly a dozen III-V solid-solution nanocrystal compositions that have not been previously reported.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Beryllium Oxide (BeO) Handbook

Beryllium oxide (BeO) is an oxide ceramic material. BeO ceramics provide thermal conductivity second only to diamond among electrically insulating materials, dissipating nearly 300 W/mK at room temperature. This property leads to electronic applications for BeO. BeO has a thermal expansion coefficient intermediate between gallium arsenide and refractory metal composites. Its low dielectric constant (6.7) and low loss index (0.0012 at 1 MHz) permits electrical circuit performance at high frequencies. It is employed as a window material for high frequency microwave applications. BeO is very stable under oxidizing and reducing high temperature and high humidity environments, unlike nitrides which will decompose to their oxide equivalent. Similar to beryllium metal, BeO acts as a scatterer of neutrons and is used as a neutron moderator material in nuclear reactor applications. The largest use of BeO is as the raw material for the manufacture of beryllium-copper alloys, followed closely as the raw material for conversion to beryllium metal. Most of the research performed on BeO was conducted in the 1960’s and 1970’s. 75% of the references cited in this Handbook are from the time period 1960-1980. Up to 1995, there were three commercial sources of BeO: Materion Corporation, Eagle-Picher, and Ceradyne Corporation. However, since 1995 Eagle-Picher and Ceradyne no longer supply BeO commercial products. Thus, the only current commercial source of BeO materials is Materion Corporation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures

III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3&Acirc;. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.

Lu, Kuangye↗
DOE OSTI2022

Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures

III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Å. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.

Lu, Kuangye↗
DOE OSTI2024

Research at UC Berkeley on the SPICE and HeRALD Dark Matter Experiments (Technical Report for DE-SC0022354)

The McKinsey and Pyle groups have taken on the responsibility to complete a number of critical tasks necessary for the successful completion of the TESSERACT project planning phase. In particular: 1) Transition Edge Sensor testing, characterization, and electromagnetic noise mitigation; 2) Design and testing of the athermal phonon detectors along with vibrational noise characterization and mitigation; 3) Testing and characterization of prototype detectors using silica, sapphire, gallium arsenide, and superfluid helium as detector materials. This grant supported efforts of graduate student Roger Romani toward these goals.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Simulating Superconducting Devices in Novel Materials Using the G4CMP Simulation Toolkit

Understanding the kinematics of phonons and charge propagation in superconducting devices is crucial for conducting low-threshold dark matter searches and minimizing correlated errors in superconducting qubits. For nearly a decade, the Geant4 Condensed Matter Physics (G4CMP) package, originally developed for the Cryogenic Dark Matter Search (CDMS) experiment, has been limited to simulating charge and phonon transport in silicon and germanium materials. In this work, we have expanded the capabilities of G4CMP to include novel substrate materials such as sapphire (Al2O3), Gallium Arsenide (GaAs), Lithium Fluoride (LiF), Calcium Tungstate (CaWO4), and Calcium Fluoride (CaF2). We demonstrate the use of this toolkit in generating phonon transport properties for these materials and compare the results with experimentally determined values where available. Additionally, we explore the performance of superconducting devices utilizing these materials.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021

Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material.

Detectors↗
DOE OSTI2026

Outdoor Deployment Data for a Four-Terminal GaAs//Si Tandem Solar Mini-Module

This dataset contains the complete outdoor measurement and analysis data for a mechanically stacked, four-terminal (4T) gallium arsenide (GaAs)//silicon (Si) tandem solar mini-module deployed from October 2019 to January 2021 at the Solar Radiation Research Laboratory (SRRL) in Golden, Colorado, USA. The data support a performance modeling and degradation analysis framework for tandem photovoltaic devices, as described in the accompanying publication. The dataset includes: (1) current–voltage (J–V) characteristics of each sub-cell measured approximately every five minutes, with extracted performance parameters; (2) spectral irradiance from an EKO MS-710 WISER spectroradiometer, along with derived spectral mismatch ratios (SMR) and average photon energy (APE); (3) one-minute resolution meteorological data from the co-located SRRL weather station and GPS-derived precipitable water vapor (PWV); (4) pre-deployment laboratory characterization (external quantum efficiency, J–V curves, standard test conditions parameters); (5) outdoor-extracted temperature and PWV correction coefficients; and (6) PVcircuit equivalent-circuit simulation outputs used for model validation. Degradation rates of −4.1 ± 0.2 %/year (GaAs) and −2.5 ± 0.9 %/year (Si) were determined using a filtering and normalization methodology adapted for fixed-tilt tandem modules. All data are provided in open, portable formats (Apache Parquet, CSV, JSON) to enable full reproducibility of the published analysis.

14 SOLAR ENERGY↗
DOE OSTI2024

Search for New Physics with the Compact Muon Solenoid Experiment and QIS-enabled Technology

Understanding the fundamental nature of dark matter (DM)---its cosmological origin, constituents, and interactions---is one of the most important questions in fundamental science today. In this thesis, I present two novel and highly complementary approaches to cover the gaps in sensitivity of current DM searches. The searches are enabled by a first-of-its-kind reconstruction technique to search for hidden-sector particles using the Compact Muon Solenoid (CMS) and by new advances in quantum sensing technology to search for axions and hidden-sector DM. In the first part of this thesis, I present a search for long-lived hidden sector particles, predicted by many extensions of the SM, using a novel technique to reconstruct decays of long-lived particles (LLPs) in the CMS muon detector. The innovative LLP reconstruction technique is sensitive to a broad range of LLP decays and to LLP masses below GeV. The search yields competitive sensitivity for proper lifetime 0.1--1000 m with the full Run 2 dataset recorded at the LHC between 2016--2018 at $\sqrt{s} = 13~$TeV. To extend the physics reach of this novel muon detector shower (MDS) signature, I present the model-independence of MDS and the reinterpretation of the search to a large number of LLP models, demonstrating its complementarity with proposed and existing dedicated LLP experiments. Finally, I present a new dedicated MDS trigger that improves the trigger efficiency by at least an order of magnitude and was deployed in 2022, at the start of Run 3 of the LHC operations. In the second part of the thesis, I present for the first time, the use of a novel quantum sensor, the low-noise and single-photon sensitive superconducting nanowire single photon detectors (SNSPDs), to directly detect dark matter. The low detection threshold and ultra-low dark count rate of SNSPDs can close the gap in DM discovery reach due to the current limitations in detector sensitivity. I will present my work on the development and characterization of SNSPDs for two entirely new experiments to directly detect axions via absorption and hidden-sector DM via electron scattering. The search for axions employs a novel broadband reflector technique with the Broadband Reflector Experiment for Axion Detection (BREAD). A unique parabolic mirror is then used to focus axion-converted photons to the SNSPDs, extending the reach to axion masses of 0.04--1 eV. On the other hand, by coupling the SNSPDs with gallium arsenide, a bright cryogenic scintillator well matched to SNSPD detection, a prototype sensing system can be built as a basis of new direct DM detection experiments capable of extending the discovery to DM masses as low as 1 MeV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1964

Economical fabrication process produces high quality junction transistors

A convenient, three-step fabrication process, with a p-type layer of gallium arsenide vapor deposited on a starting wafer of germanium, is used to produce heterojunction-homojunction p-n-p transistors. These are of high quality with good injection efficiency and low capacitance.

Source record↗
NASA NTRS1965

Solid-state laser transmitter is amplitude modulated

Amplitude modulated laser transmitter affords radio frequencies unlimited bandwidth. The system, which is solid state and compact, uses a gallium arsenide diode that emits in the near infrared.

Bilderback, R.↗
NASA NTRS1966

Cuprous selenide and sulfide form improved photovoltaic barriers

Photovoltaic barriers formed by depositing a layer of polycrystalline cuprous sulfide or cuprous selenide on gallium arsenide are chemically and electrically stable. The stability of these barrier materials is significantly greater than that of cuprous iodide.

Source record↗