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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

High performance ionic-liquid-gated air doped diamond field-effect transistors

Here we report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ~200 cm 2 V –1 s –1 . In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ~1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from –3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Optimizing Charge-coupled Device Readout Enabled by the Floating-gate Amplifier

Multiple-Amplifier Sensing (MAS) charge-coupled devices (CCDs) have recently been shown to be promising silicon detectors that meet noise sensitivity requirements for next generation Stage-5 spectroscopic surveys and potentially, future space-based imaging of extremely faint objects on missions such as the Habitable Worlds Observatory. Building upon the capability of the Skipper CCD to achieve deeply sub-electron noise floors, MAS CCDs utilize multiple floating-gate amplifiers along the serial register to increase the readout speed by a factor of the number of output nodes compared to a Skipper CCD. We introduce and experimentally demonstrate on a 16-channel prototype device new readout techniques that exploit the MAS CCD’s floating-gate amplifiers to optimize the correlated double sampling by resetting once per line instead of once per pixel. With this new mode, we find an optimal filter to subtract the noise from the signal during read out. We also take advantage of the MAS CCD’s structure to tune the read time by independently changing integration times for the signal and reference level. Together with optimal weighted averaging of the 16 outputs, these approaches enable us to reach a sub-electron noise of 0.9 e − rms pix −1 at 19 μs pix −1 for a single charge measurement per pixel—simultaneously giving a 30% faster readout time and 10% lower read noise compared to performance previously evaluated without these techniques.

Lin, Kenneth W. (ORCID:0000000189672281)↗
DOE OSTI2021

Quantum process tomography of a Mølmer-Sørensen gate via a global beam

Here, we present a framework for quantum process tomography of two-ion interactions that leverages modulations of the trapping potential and composite pulses from a global laser beam to achieve individual-ion addressing. Tomographic analysis of identity and delay processes reveals dominant error contributions from laser decoherence and slow qubit frequency drift during the tomography experiment. We use this framework on two co-trapped 40 Ca + ions to analyze both an optimized and an overpowered Mølmer–Sørensen gate and to compare the results of this analysis to a less informative Bell-state tomography measurement and to predictions based on a simplified noise model. These results show that the technique is effective for the characterization of two-ion quantum processes and for the extraction of meaningful information about the errors present in the system. The experimental convenience of this method will allow for more widespread use of process tomography for characterizing entangling gates in trapped-ion systems.

quantum computing↗
DOE OSTI2023

Time-warping invariant quantum recurrent neural networks via quantum-classical adaptive gating

Adaptive gating plays a key role in temporal data processing via classical recurrent neural networks (RNNs), as it facilitates retention of past information necessary to predict the future, providing a mechanism that preserves invariance to time warping transformations. This paper builds on quantum RNNs (QRNNs), a dynamic model with quantum memory, to introduce a novel class of temporal data processing quantum models that preserve invariance to time-warping transformations of the (classical) input-output sequences. The model, referred to as time warping-invariant QRNN (TWI-QRNN), augments a QRNN with a quantum–classical adaptive gating mechanism that chooses whether to apply a parameterized unitary transformation at each time step as a function of the past samples of the input sequence via a classical recurrent model. The TWI-QRNN model class is derived from first principles, and its capacity to successfully implement time-warping transformations is experimentally demonstrated on examples with classical or quantum dynamics.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

A gated graph transformer for protein complex structure quality assessment and its performance in CASP15

Abstract Motivation Proteins interact to form complexes to carry out essential biological functions. Computational methods such as AlphaFold-multimer have been developed to predict the quaternary structures of protein complexes. An important yet largely unsolved challenge in protein complex structure prediction is to accurately estimate the quality of predicted protein complex structures without any knowledge of the corresponding native structures. Such estimations can then be used to select high-quality predicted complex structures to facilitate biomedical research such as protein function analysis and drug discovery. Results In this work, we introduce a new gated neighborhood-modulating graph transformer to predict the quality of 3D protein complex structures. It incorporates node and edge gates within a graph transformer framework to control information flow during graph message passing. We trained, evaluated and tested the method (called DProQA) on newly-curated protein complex datasets before the 15th Critical Assessment of Techniques for Protein Structure Prediction (CASP15) and then blindly tested it in the 2022 CASP15 experiment. The method was ranked 3rd among the single-model quality assessment methods in CASP15 in terms of the ranking loss of TM-score on 36 complex targets. The rigorous internal and external experiments demonstrate that DProQA is effective in ranking protein complex structures. Availability and implementation The source code, data, and pre-trained models are available at https://github.com/jianlin-cheng/DProQA.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

Gate-tunable enhancement of supercurrent in hybrid planar Josephson junctions

Planar Josephson junctions (JJs) have emerged as a promising platform for the realization of topological superconductivity and Majorana zero modes. To obtain robust quasi one-dimensional (1D) topological superconducting states using planar JJs, limiting the number of 1D Andreev bound states’ subbands that can be present, and increasing the size of the topological superconducting gap are two fundamental challenges. It has been suggested that both problems can be addressed by properly designing the interfaces between the JJ’s normal region and the superconducting leads. We fabricated Josephson junctions with periodic hole structures on the superconducting contact leads on InAs heterostructures with epitaxial superconducting Al. By depleting the chemical potential inside the holes region with a top gate, we observed an enhancement of the supercurrent across the junction. The theoretical analysis shows that the enhancement of the JJ’s critical current is achieved when the depletion of the holes is such to optimize the matching of quasiparticles’ wave function at the normal/superconductor interface. Furthermore, these results show how the combination of carefully designed patterns for the Al coverage, and external gates, can be successfully used to tune the density and wave functions’ profiles in the normal region of the JJ, and therefore open an avenue to tune some of the critical properties, such as number of subbands and size of the topological gap, that must be optimized to obtain robust quasi-1D superconducting states supporting Majorana bound states.

Bogoliubov-de Gennes equations↗
DOE OSTI2026

Electrostatic gate-controlled quantum interference in a high-mobility two-dimensional electron gas at the (La 0.3 ⁢Sr 0.7 )(Al 0.65 ⁢Ta 0.35 )O 3 /SrTiO 3 interface

Here, we report quantum oscillations in magnetoresistance that are periodic in magnetic field (𝐵), observed at the interface between (La 0.3 ⁢Sr 0.7 )(Al 0.65 ⁢Ta 0.35 )O 3 and SrTiO 3 . Unlike Shubnikov–de Haas oscillations, which appear at magnetic fields > 7 T and diminish quickly as the temperature rises, these 𝐵-periodic oscillations emerge at low fields and persist up to 10 K. Their amplitude decays exponentially with both temperature and field, specifying dephasing of quantum interference. Increasing the carrier density through electrostatic gating results in a systematic reduction in both the amplitude and frequency of the oscillations, with complete suppression beyond a certain gate voltage. We attribute these oscillations to the Altshuler-Aronov-Spivak effect, likely arising from naturally formed closed-loop paths due to the interconnected quasi-one-dimensional conduction channels along SrTiO 3 domain walls. The relatively long phase coherence length (≃ 1.8 µ⁢m at 0.1 K), estimated from the oscillation amplitude, highlights the potential of complex oxide interfaces as a promising platform for exploring quantum interference effects and advancing device concepts in quantum technologies, such as mesoscopic interferometers and quantum sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe 2

Here, we report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe 2 . The devices are operated with gates above and below the WSe 2 layer to accumulate a hole gas, which for some devices is then selectively depleted to define the dot. Temperature dependence of conductance in the Coulomb-blockade regime is consistent with transport through a single level, and excited-state transport through the dots is observed at temperatures up to 10 K. For adjacent charge states of a bilayer-WSe 2 dot, the magnetic field dependence of excited-state energies is used to estimate $\textit{g}$ factors between 0.8 and 2.4 for different states. These devices provide a platform to evaluate valley-spin states in monolayer and bilayer WSe 2 for application as qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Braiding Majorana fermions and creating quantum logic gates with vortices on a periodic pinning structure

We show how vortices that support Majorana fermions when placed on a periodic pinning array can be used for vortex exchange and independent braiding by performing a series of specific moves with a probe tip. Using these braiding operations, we demonstrate realizations of a Hadamard and a CNOT gate. We specifically consider the first matching field at which there is one vortex per pinning site, and we show that there are two basic dynamic operations, move and exchange, from which basic braiding operations can be constructed in order to create specific logic gates. The periodic pinning array permits both control of the world lines of the vortices and freedom for vortex manipulation using a set of specific moves of the probe during which the probe tip strength and height remain unchanged. We measure the robustness of the different moves against thermal effects and show that the three different operations produce distinct force signatures on the moving tip.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Transport studies in a gate-tunable three-terminal Josephson junction

Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multiterminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multiterminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage, and magnetic field. Finally, we find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction computational model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Disorder driven crossover between anomalous Hall regimes in Fe 3 GaTe 2

The large anomalous Hall conductivity (AHC) of the Fe 3 ⁢(Ge,Ga)⁢Te 2 compounds has attracted considerable attention. Here, we expose the intrinsic nature of the AHC in Fe 3 ⁢GaTe 2 crystals characterized by high conductivities, which show disorder-independent AHC with a pronounced value 𝜎$^{c}_{𝑥⁢𝑦}$≈ 420 Ω −1 ⁢cm −1 . In the low-conductivity regime, we observe the scaling relation 𝜎 𝑥⁢𝑦 ∝ 𝜎$^{1.6}_{𝑥⁢𝑥}$, which crosses over to 𝜎 𝑥⁢𝑦 ≃ 𝜎$^{c}_{𝑥⁢𝑦}$ as 𝜎 𝑥⁢𝑥 increases. Disorder in low-conductivity crystals is confirmed by the broadening of a first-order transition between ferromagnetism and the ferrimagnetic ground state. Through density functional theory (DFT) calculations, we reveal that the dominant sources of Berry curvature are located a few hundred meV below the Fermi energy around the Γ point. Furthermore, Fe 3⁢ GaTe 2 clearly exposes the disorder-induced crossover among distinct AHC regimes, previously inferred from measurements on different ferromagnets located on either side of the crossover region.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Primitive quantum gates for dihedral gauge theories

We describe the simulation of dihedral gauge theories on digital quantum computers. The nonabelian discrete gauge group $D_N$-- the dihedral group -- serves as an approximation to $U(1)\times\mathbb{Z}_2$ lattice gauge theory. In order to carry out such a lattice simulation, we detail the construction of efficient quantum circuits to realize basic primitives including the nonabelian Fourier transform over $D_N$, the trace operation, and the group multiplication and inversion operations. For each case the required quantum resources scale linearly or as low-degree polynomials in $n=\log N$. We experimentally benchmark our gates on the Rigetti Aspen-9 quantum processor for the case of $D_4$. The fidelity of all $D_4$ gates was found to exceed $80\%$.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Optimal Control of Families of Quantum Gates

Quantum optimal control (QOC) enables the realization of accurate operations, such as quantum gates, and supports the development of quantum technologies. To date, many QOC frameworks have been developed, but those remain only naturally suited to optimize a single targeted operation at a time. Here, we extend this concept to optimal control with a continuous family of targets, and demonstrate that an optimization based on neural networks can find families of time-dependent Hamiltonians realizing desired classes of quantum gates in minimal time.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Gate-Tunable Phonon Magnetic Moment in Bilayer Graphene

Here we develop a first-principles quantum scheme to calculate the phonon magnetic moment in solids. As a showcase example, we apply our method to study gated bilayer graphene, a material with strong covalent bonds. According to the classical theory based on the Born effective charge, the phonon magnetic moment in this system should vanish, yet our quantum mechanical calculations find significant phonon magnetic moments. Furthermore, the magnetic moment is highly tunable by changing the gate voltage. Our results firmly establish the necessity of the quantum mechanical treatment, and identify small-gap covalent materials as a promising platform for studying tunable phonon magnetic moment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Local enhancement in transient absorption spectroscopy by gating the resonance in the time domain

The concept of resonant perfect absorption, enabled by the combined action of pulse propagation and an auxiliary gate pulse, was recently proposed and demonstrated in a group of two-level systems [Y. He , ]. Here we exploit this method in a more realistic scenario by solving the coupled time-dependent Schrödinger equation and the Maxwell wave equation in helium. Through emptying the population of the 1 s 2 p excited state after its excitation, we explore the evolution of the spectral profile with time delay and propagation distance and link the observations to the controlled interference between the original field and the gated new field. We find that resonant absorption for higher-lying states can also be strongly enhanced, in spite of the congestion of multiple resonances and the presence of complex laser-induced couplings. Our results show that interferometric control of absorption using intense laser fields can be applied selectively in both the temporal and spatial domains. Published by the American Physical Society 2024

He, Yu (ORCID:0000000152120176)↗
DOE OSTI2025

Unconventional gate-induced superconductivity in transition-metal dichalcogenides

Superconductivity in few-layer semiconducting transition-metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the versatility and insight of Bardeen-Cooper-Schrieffer gap equations to rationalize such experiments. The multivalley nature of semiconducting TMDs is taken into account, together with the doping- and momentum-dependent electron-phonon and Coulomb interactions. Consistently with experiments, we find that superconductivity occurs when the electron density is large enough that the 𝑄 valleys get occupied, as a result of a large enhancement of electron-phonon interactions. Despite being phonon driven, the superconducting state is predicted to be sensitive to Coulomb interactions, which can lead to the appearance of a relative sign difference between valleys and thus to a 𝑠 +− character. We discuss qualitatively how such scenario may account for many of the observed physical phenomena for which no microscopic explanation has been found so far, including in particular the presence of a large subgap density of states, and the sample-dependent dome-shaped dependence of 𝑇 𝑐 on accumulated electron density. Our results provide a comprehensive analysis of gate-induced superconductivity in semiconducting TMDs, and introduce an approach that will likely be valuable for other multivalley electronic systems, in which superconductivity occurs at relatively low electron density.

2-dimensional systems↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
DOE OSTI2024

A Low-Profile Gate Power Supply for a SiC Phase Leg with Reduced Isolation Capacitance

Gate driver power supply (GDPS) for SiC devices needs power to 5 W as the switching frequency increases to hundreds of kHz. Resonant converters with planar magnetics demand GDPS with a lower profile. Also, the isolation capacitance (Cp) needs to be minimized for SiC devices with high dv/dt. This paper proposed a planar 5 W*2, 20 V isolated gate power supply for a SiC phase leg in the EV traction inverter. Air-core magnetics with PCB windings are applied for low profile. A single-switch resonant Class-E topology is proposed with zero-voltage switching at 6.78 MHz to minimize the magnetics footprint for a 6 pF Cp. Compared with commercial power supplies with similar power, the proposed power supply reduced the profile and Cp by more than half without sacrificing its efficiency and power density.

Li, Bo↗