Investigation of new concepts of adaptive devices Quarterly technical report, 15 Jun. - 14 Sep. 1967
Insulated gate field effect transistor with adaptive and memory characteristics
Lincoln, A. J.↗
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An integrated nonvolatile read-write memory with addressing.
Integrated nonvolatile read-write memory with addressing using variable threshold field effect transistor including cell operation, channel shielding and circuit
Koig, M. B.↗
Solid state switch provides high input-to-output isolation
Switch uses a combination of N-channel and P-channel Metal Oxide Semiconductor Field Effect Transistors /MOSFET/ to obtain a normally open switch with no power applied. Series-shunt-series MOSFET switching achieves high input-output isolation.
Magee, R. L.↗
Signal conditioner circuit for photomultiplier tube
Miniaturized circuit improves measurement of radiation dose absorbed in a scintillation crystal. The temperature coefficient of the field-effect transistor gate-source voltage in the isolation amplifier can be readily controlled.
Cellier, A.↗
Constant current source for converting absolute temperatures to analog voltages
Circuit configuration consisting of matched differential amplifier, temperature compensated zener diode, and low pinchoff-voltage field effect transistor provides accurate and stable current supply for temperature sensor devices.
Padilla, J. R.↗
Polarographic carbon dioxide transducer amplifier
Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability. Thermistor in feedback loop provides temperature compensation for large drifts in the sensor.
Stillman, G.↗
Constant-amplitude, frequency- independent phase shifter
Electronic circuit using operational amplifiers provides output with constant phase shift amplitude, with respect to sinusoidal input, over wide range of frequencies. New circuit includes field effect transistor, Q, operational amplifiers, A1 and A2, and phase detector.
Deboo, G. J.↗
Frequency to Analog Converter
Frequency to analog converters with unipolar field effect transistor for determining potential charge by pulse duration of input signal
Hagihara, F. S.↗
Advances in complementary MOSFET technology
Metal oxide silicon field effect transistors for integrated circuitry in data processing
Schaefer, D. H.↗
Radiation effects in MOS integrated circuits
High energy electron irradiation effects on field effect transistors in integrated circuit devices
Brashears, S. S.↗
High noise immunity one shot
Multivibrator circuit, which includes constant current source, isolates line noise from timing circuitry and field effect transistor controls circuit's operational modes. Circuit has high immunity to supply line noise.
Schaffer, G. L.↗
Voltage-Tunable Parallel-T Filter for Remote Operation
Filter is devised by using insulated-gate field-effect transistors for remote control. Transistors are P-channel devices that operate in enhancement mode and are commercially available.
Brantner, R. E.↗
Stable photosensor amplifiers
Minimization of common mode effects in differential amplifier arrangement which processes signals from two high impedance photosensors is achieved by connecting one photosensor in feedback loop of amplifier and using field effect transistors in the input circuit.
Fujimoto, H.↗
Development of improved pyroelectric detectors; Literature survey of pyroelectric materials and their characteristics
The object of this program is to improve the detectivity of the pyroelectric detector with the ultimate goal of operation at or near the temperature-noise limit. Two general areas of investigation are undertaken. The first is to improve responsivity through the use of new materials. The second is directed toward reduction of noise and will be effected with improved field effect transistor characteristics, and improved electroding of the pyroelectric material. The search for new materials has begun with a review of the literature on pyroelectric materials in several languages. The compiled data includes an extensive list of references. From this, several materials have already been selected for investigation. FETs are being obtained from various manufacturers, evaluated, and selected units will be tested with pyroelectric elements as complete detectors.
Weiner, S.↗
Hardening electronic devices against very high total dose radiation environments
The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.
Buchanan, B.↗
Analog tree-organized multiplexer
An analog tree-organized multiplexer (ATOM) which is intended for use in the telemetry system of an interplanetary spacecraft is designed. The ATOM will be fabricated by a monolithic, dielectric isolation process, and will contain silicon junction field effect transistors (JFET) as the active elements. The effect of the radiation environment on the performance of the ATOM is analyzed. The result indicates that the expected radiation environment will cause only minor changes in the preradiation characteristics of ATOM. The JFET in the ATOM is designed to meet the electrical requirements when fabricated by either the double poly-dielectric isolation process or the raised dielectric isolation process. The effect of the heat treatment required for the dielectric isolation process on the diffusion profile of the JFET is described. The layout of the ATOM circuit for fabrication by either the double poly or raised dielectric isolation process is also given.
Crabbe, J. S.↗
Development of improved pyroelectric detectors. Measurements of pyroelectric material characteristics and FET characteristics
Research was undertaken to improve the detectivity of the pyroelectric detector with the ultimate goal of operation at or near the temperature-noise limit. Two general areas of investigation were undertaken: (1) to improve responsivity through the use of new materials; and (2) to reduce noise through improved field effect transistor characteristics, and improved electroding of the pyroelectric material. FET's are being obtained from various manufacturers, evaulated, and selected units tested for evaluation of characteristics critical to their use as preamplifiers with pyroelectric detectors.
Weiner, S.↗
Development of improved pyroelectric detectors: Measurements of pyroelectric material characteristics and FET characteristics
The object of this program is to improve the detectivity of the pyroelectric detector with the ultimate goal of operation at or near the temperature noise limit. Two general areas of investigation are undertaken. The first is to improve responsivity through the use of new materials. The second is directed toward reduction of noise and will be effected with improved field effect transistor characteristics, and improved electroding of the pyroelectric material. The review of the literature on pyroelectric materials continues. From this, several materials have already been selected for investigation, and several were tested.
Weiner, S.↗