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At least 253 records · Page 14

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DOE OSTI2015

Exciton size and binding energy limitations in one-dimensional organic materials

In current organic photovoltaic devices, the loss in energy caused by the charge transfer step necessary for exciton dissociation leads to a low open circuit voltage, being one of the main reasons for rather low power conversion efficiencies. A possible approach to avoid these losses is to tune the exciton binding energy to a value of the order of thermal energy, which would lead to free charges upon absorption of a photon, and therefore increase the power conversion efficiency towards the Shockley-Queisser limit. We determine the size of the excitons for different organic molecules and polymers by time dependent density functional theory calculations. For optically relevant transitions, the exciton size saturates around 0.7 nm for one-dimensional molecules with a size longer than about 4 nm. For the ladder-type polymer poly(benzimidazobenzophenanthroline), we obtain an exciton binding energy of about 0.3 eV, serving as a lower limit of the exciton binding energy for the organic materials investigated. Furthermore, we show that charge transfer transitions increase the exciton size and thus identify possible routes towards a further decrease of the exciton binding energy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2016

Ultrafast exciton relaxation in monolayer transition metal dichalcogenides

We examine a mechanism by which excitons undergo ultrafast relaxation in common monolayer transition metal dichalcogenides. It is shown that at densities ≈1 × 10{sup 11 }cm{sup −2} and temperatures ≤60 K, excitons in well known monolayers (MoS{sub 2}, MoSe{sub 2}, WS{sub 2}, and WSe{sub 2}) exist as point-like structureless electron-hole quasi-particles. We evaluate the average rate of exciton energy relaxation due to acoustic phonons via the deformation potential and the piezoelectric coupling mechanisms and examine the effect of spreading of the excitonic wavefunction into the region perpendicular to the monolayer plane. Our results show that the exciton relaxation rate is enhanced with increase in the exciton temperature, while it is decreased with increase in the lattice temperature. Good agreements with available experimental data are obtained when the calculations are extrapolated to room temperatures. A unified approach taking into account the deformation potential and piezoelectric coupling mechanisms shows that exciton relaxation induced by phonons is as significant as defect assisted scattering and trapping of excitons by surface states in monolayer transition metal dichalcogenides.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2017

Photoluminescence dynamics of direct and indirect excitons in CdTe/ZnTe superlattices with quantum dot layers

Photoluminescence kinetics is measured for spatially direct and indirect excitons in CdTe quantum dots excited by second harmonic radiation pulses of a picosecond Ti : sapphire laser. The width of a ZnTe barrier layer varied in the range of 2 – 12 monolayers (MLs). Since the photoluminescence decay curves are not described by a single exponential dependence, two components are analysed – fast and slow, which can be approximated by exponential functions. It is shown that in the samples with a barrier layer width of 12 and 4 MLs, the decay times for the fast component of a direct exciton and an indirect exciton are 0.4 ns and 3 μs, respectively. The long-term component is observed in both spectra. For a direct exciton, the photoluminescence decay time is 6 ns, and for an indirect exciton it is 22 μs. It is found that the recombination times for direct and indirect excitons in a sample with the barrier layer width of 2 MLs are close: in both cases the decay time for the fast component and slow component is 2 and 80 ns, respectively. Taking into account the tensile strain of the ZnTe layer and origin of the quantum well for light holes in this layer it is assumed that electrons in CdTe quantum dots interact with light holes in a ZnTe layer and generate a quasi-direct exciton because electron wave functions penetrate into the barrier. (exciton photoluminescence)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2026

Manipulation of Localized Excitons in CrPS4 by Temperature and Magnetic Field

Layered van der Waals magnetic semiconductors provide a versatile platform for exploring excitonic phenomena intertwined with spin and lattice degrees of freedom, enabling excitons to act as sensitive probes of magnetic order. CrPS4 is a layered antiferromagnetic semiconductor that hosts rich excitonic features whose microscopic origin and connection to magnetic ordering remain incompletely understood. Here, we investigate the electronic and excitonic properties of bulk CrPS4 using a combination of many-body perturbation theory, dynamical mean-field theory, and photoluminescence-based experiments. Our calculations establish CrPS4 as a direct-gap semiconductor with a bandgap of 2.48 eV in the antiferromagnetic phase. Several subbandgap excitonic transitions are predicted by theory, comprising multiple spin-allowed excitons and an additional spin-flip excitation, predominantly localized on the Cr3+ ions. Temperature- and magnetic-field-dependent optical measurements reveal thermally driven exciton redistribution among localized states and identify characteristic energy shifts that provide clear optical signatures of magnetic phase transitions in CrPS4. These results provide insights into the excitonic transitions of antiferromagnets and suggest potential routes for all-optical sensing and light-driven control of their magnetic order.

2D materials↗

DOE OSTI2020

Strained bilayer WSe 2 with reduced exciton-phonon coupling

We explore excitonic absorption and emission in bilayer WSe 2 under tensile strain. We observe a redshift of 110 meV in the energy of the A exciton absorption peak (at the direct gap at the K point in the Brillouin zone) under 2.1% uniaxial tensile strain. In addition, under the same strain, the spectral linewidth of the A exciton at room temperature decreases by a factor of 2, from 70 to 36 meV. We show that this decrease is a result of suppression of phonon-mediated exciton scattering channels. This suppression is associated with the relative upshift under strain of the Q valley in the conduction band (involved in the indirect exciton emission), which is nearly degenerate with the K valley (involved in the A exciton). We analyze the strain-dependent absorption and photoluminescence spectra to determine the relative positions of these valleys and to infer intervalley scattering rates. Our model describes well the decrease and the distinct trends in the A exciton linewidth of monolayer and bilayer WSe 2 under strain. The findings show that strain can be used to tune, as well as to probe, the relative energies of band extrema and exciton scattering channels in two-dimensional semiconductors.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Simultaneous fermion and exciton condensations from a model Hamiltonian

Fermion-exciton condensation in which both fermion-pair (i.e., superconductivity) and exciton condensations occur simultaneously in a single coherent quantum state has recently been conjectured to exist. Here, we capture the fermion-exciton condensation through a model Hamiltonian that can recreate the physics of this new class of highly correlated condensation phenomena. We demonstrate that the Hamiltonian generates the large-eigenvalue signatures of fermion-pair and exciton condensations for a series of states with increasing particle numbers. The results confirm that the dual-condensate wave function arises from the entanglement of fermion-pair and exciton wave functions, which we previously predicted in the thermodynamic limit. Furthermore, this model Hamiltonian—generalizing well-known model Hamiltonians for either superconductivity or exciton condensation—can explore a wide variety of condensation behavior. It provides significant insights into the required forces for generating a fermion-exciton condensate, which will likely be invaluable for realizing such condensations in realistic materials with applications from superconductors to excitonic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Spectroscopy of Plasmon-Excitons in Semiconductor-Metal Nanostructures

The results of the theory considering mixed plasmon-excitonic modes and their spectroscopy are presented. The plasmon-excitons are formed owing to strong Coulomb coupling between quasi-two-dimensional excitons of a quantum well and dipole plasmons of nanoparticles. The effective polarizability associated with a nanoparticle is calculated in a self-consistent approximation taking into account the local field determined by in-layer dipole plasmons and their image charges due to the excitonic polarization of a near quantum well. The spectra of elastic scattering and specular reflection of light are investigated in cases of a single silver nanoparticle and a monolayer of such particles situated in close proximity to a quantum well GaAs/AlGaAs. The optical spectra show a two-peak structure with a deep and narrow dip in the resonant range of plasmon-excitons. Propagation of plasmon-excitonic polaritons is discussed for periodic superlattices whose unit cell consists of a quantum well and a layer of metal nanoparticles. The superradiance regime originating in the Bragg diffraction of plasmon-excitonic polaritons by the superlattice is investigated. It is shown that the broad spectrum of plasmonic reflection depending on the number of unit cells in a superlattice also has a narrow dip at the exciton frequency.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Implementation of a Frenkel exciton-based controlled phase shifter

Frenkel excitons are of interest for ultrafast switching applications due to the femtosecond timescale at which coherent exciton transfer between chromophores takes place. The Frenkel Hamiltonian, which governs the dynamics of Frenkel excitons, belongs to a class of Hamiltonians that enable universal quantum computation. It is thus of interest to determine how a complete set of exciton-based gates for quantum computing could be constructed as aggregates of chromophores. Here, we demonstrate that a controlled phase shifter can be constructed as a pair of exciton transmission lines that employ two types of chromophores and that are cross coupled by a two-exciton interaction. This element facilitates the construction of controlled basis-change gates, thereby enabling the implementation of a complete set of exciton-based gates for universal quantum computation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2025

Real-Space Quantification of Exciton Localization in Acene Crystals Using Wannier Function Decomposition

Here, we introduce the Wannier function decomposition of excitons (WFDX) method to quantify exciton localization in solids within the ab initio Bethe-Salpeter equation framework. By decomposing each Bloch exciton wave function into products of single-particle electron and hole maximally localized Wannier functions, this real-space approach provides well-defined orbital- and spatial-resolved measures of both Frenkel and charge-transfer excitons at low computational cost. We apply WFDX to excitons in acene crystals, quantifying how the number of rings, the exciton spin state, and the center-of-mass momentum affect spatial localization. Additionally, we show how this real-space representation reflects structural nonsymmorphic symmetries that are hidden in standard reciprocal-space descriptions. We demonstrate how the WFDX framework can be used to efficiently interpolate exciton expansion coefficients in reciprocal-space and outline how it may facilitate evaluation of observables involving position operators, highlighting its potential as a general tool for both analyzing and computing excitonic properties in solids.

Tao, Zui [University of California, Berkeley, CA (↗

DOE OSTI2017

Unexpectedly Fast Phonon-Assisted Exciton Hopping between Carbon Nanotubes

Carbon-nanotube (CNT) aggregates are promising light-absorbing materials for photovoltaics. The hopping rate of excitons between CNTs directly affects the efficiency of these devices. We theoretically investigate phonon-assisted exciton hopping, where excitons scatter with phonons into a same-tube transition state, followed by intertube Coulomb scattering into the final state. Second-order hopping between bright excitonic states is as fast as the first-order process (~1 ps). For perpendicular CNTs, the high rate stems from the high density of phononic states; for parallel CNTs, the reason lies in relaxed selection rules. Moreover, second-order exciton transfer between dark and bright states, facilitated by phonons with large angular momentum, has rates comparable to bright-to-bright transfer, so dark excitons provide an additional pathway for energy transfer in CNT composites. Furthermore, as dark excitons are difficult to probe in experiment, predictive theory is critical for understanding exciton dynamics in CNT composites.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2018

Modeling the Influence of Correlated Molecular Disorder on the Dynamics of Excitons in Organic Molecular Semiconductors

In this paper, we investigate the role of correlated molecular disorder on the dynamics of excitons in oligothiophene-based organic semiconductors. We simulate exciton dynamics using the Frenkel exciton model and derive parameters for this model so that they reflect the specific characteristics of all-atom molecular systems. By systematically modifying the parameters of the Frenkel exciton model, we isolate the influence of spatial and temporal molecular correlations on the dynamics of excitons in these systems. For the oligothiophene systems considered here, we find that the molecular fluctuations exhibit long-lived memory effects, but these effects do not significantly influence the dynamic properties of excitons. We also find that excitons can be sensitive to the molecular-scale spatial correlations, and that this sensitivity grows with the amount of energetic disorder within the material. We conclude that control over spatial correlations can mitigate the negative influence of disorder on exciton transport.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2016

Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides

Atomically thin transition metal dichalcogenides are direct-gap semiconductors with strong light–matter and Coulomb interactions. The latter accounts for tightly bound excitons, which dominate their optical properties. Besides the optically accessible bright excitons, these systems exhibit a variety of dark excitonic states. They are not visible in the optical spectra, but can strongly influence the coherence lifetime and the linewidth of the emission from bright exciton states. We investigate the microscopic origin of the excitonic coherence lifetime in two representative materials (WS 2 and MoSe 2 ) through a study combining microscopic theory with spectroscopic measurements. We also show that the excitonic coherence lifetime is determined by phonon-induced intravalley scattering and intervalley scattering into dark excitonic states. Particularly, we identify exciton relaxation processes involving phonon emission into lower-lying dark states that are operative at all temperatures, in WS 2 .

36 MATERIALS SCIENCE↗

DOE OSTI2015

Excitonic luminescence upconversion in a two-dimensional semiconductor

Photon upconversion is an elementary light-matter interaction process in which an absorbed photon is re-emitted at higher frequency after extracting energy from the medium. Furthermore, this phenomenon lies at the heart of optical refrigeration in solids(1), where upconversion relies on anti-Stokes processes enabled either by rare-earth impurities(2) or exciton-phonon coupling(3). We demonstrate a luminescence upconversion process from a negatively charged exciton to a neutral exciton resonance in monolayer WSe2, producing spontaneous anti-Stokes emission with an energy gain of 30 meV. Polarization-resolved measurements find this process to be valley selective, unique to monolayer semiconductors(4). Since the charged exciton binding energy(5) closely matches the 31 meV A(1)' optical phonon(6-9), we ascribe the spontaneous excitonic anti-Stokes to doubly resonant Raman scattering, where the incident and outgoing photons are in resonance with the charged and neutral excitons, respectively. Additionally, we resolve a charged exciton doublet with a 7 meV splitting, probably induced by exchange interactions, and show that anti-Stokes scattering is efficient only when exciting the doublet peak resonant with the phonon, further confirming the excitonic doubly resonant picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Long-range exciton transport and slow annihilation in two-dimensional hybrid perovskites

Two-dimensional hybrid organic-inorganic perovskites with strongly bound excitons and tunable structures are desirable for optoelectronic applications. Exciton transport and annihilation are two key processes in determining device efficiencies; however, a thorough understanding of these processes is hindered by that annihilation rates are often convoluted with exciton diffusion constants. Here we employ transient absorption microscopy to disentangle quantum-well-thickness-dependent exciton diffusion and annihilation in twodimensional perovskites, unraveling the key role of electron-hole interactions and dielectric screening. The exciton diffusion constant is found to increase with quantum-well thickness, ranging from 0.06 ± 0.03 to 0.34 ± 0.03 cm 2 s –1 , which leads to long-range exciton diffusion over hundreds of nanometers. The exciton annihilation rates are more than one order of magnitude lower than those found in the monolayers of transition metal dichalcogenides. The combination of long-range exciton transport and slow annihilation highlights the unique attributes of two-dimensional perovskites as an exciting class of optoelectronic materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe2

Monolayer transition-metal dichalcogenides (TMDCs) show a wealth of exciton physics. Here, we report the existence of a new excitonic species, the high-lying exciton (HX), in single-layer WSe 2 with an energy of ~3.4 eV, almost twice the band-edge A-exciton energy, with a linewidth as narrow as 5.8 meV. The HX is populated through momentum-selective optical excitation in the K-valleys and is identified in upconverted photoluminescence (UPL) in the UV spectral region. Strong electron-phonon coupling results in a cascaded phonon progression with equidistant peaks in the luminescence spectrum, resolvable to ninth order. Ab initio GW-BSE calculations with full electron-hole correlations explain HX formation and unmask the admixture of upper conduction-band states to this complex many-body excitation. These calculations suggest that the HX is comprised of electrons of negative mass. The coincidence of such high-lying excitonic species at around twice the energy of band-edge excitons rationalizes the excitonic quantum-interference phenomenon recently discovered in optical second-harmonic generation (SHG) and explains the efficient Auger-like annihilation of band-edge excitons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Quadrupolar excitons and hybridized interlayer Mott insulator in a trilayer moiré superlattice

Transition metal dichalcogenide (TMDC) moiré superlattices, owing to the moiré flatbands and strong correlation, can host periodic electron crystals and fascinating correlated physics. The TMDC heterojunctions in the type-II alignment also enable long-lived interlayer excitons that are promising for correlated bosonic states, while the interaction is dictated by the asymmetry of the heterojunction. Here we demonstrate a new excitonic state, quadrupolar exciton, in a symmetric WSe 2 -WS 2 -WSe 2 trilayer moiré superlattice. The quadrupolar excitons exhibit a quadratic dependence on the electric field, distinctively different from the linear Stark shift of the dipolar excitons in heterobilayers. This quadrupolar exciton stems from the hybridization of WSe 2 valence moiré flatbands. The same mechanism also gives rise to an interlayer Mott insulator state, in which the two WSe 2 layers share one hole laterally confined in one moiré unit cell. In contrast, the hole occupation probability in each layer can be continuously tuned via an out-of-plane electric field, reaching 100% in the top or bottom WSe 2 under a large electric field, accompanying the transition from quadrupolar excitons to dipolar excitons. Our work demonstrates a trilayer moiré system as a new exciting playground for realizing novel correlated states and engineering quantum phase transitions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Floquet engineering of strongly driven excitons in monolayer tungsten disulfide

Interactions of quantum materials with strong-laser fields can induce exotic nonequilibrium electronic states. Monolayer transition-metal dichalcogenides, a new class of direct-gap semiconductors with prominent quantum confinement, offer exceptional opportunities toward Floquet engineering of quasiparticle electron-hole states, or excitons. Strong-field driving has a potential to achieve enhanced control of electronic band structure, thus a possibility to open a new realm of exciton light-matter interactions. However, experimental implementation of strongly-driven excitons has so far remained out of reach. Here, we use mid-infrared laser pulses below the optical bandgap to excite monolayer tungsten disulfide up to a field strength of 0.3 V/nm, and demonstrate strong-field light dressing of excitons in the excess of a hundred millielectronvolt. Our high-sensitivity transient absorption spectroscopy further reveals formation of a virtual absorption feature below the 1s-exciton resonance, which is assigned to a light-dressed sideband from the dark 2p-exciton state. Quantum-mechanical simulations substantiate the experimental results and enable us to retrieve real-space movies of the exciton dynamics. Here, this study advances our understanding of the exciton dynamics in the strong-field regime, and showcases the possibility of harnessing ultrafast, strong-field phenomena in device applications of two-dimensional materials.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Emerging exciton physics in transition metal dichalcogenide heterobilayers

Atomically thin transition metal dichalcogenides (TMDs) are 2D semiconductors with tightly bound excitons and correspondingly strong light–matter interactions. Owing to the weak van der Waals bonding between layers, TMDs can be isolated and stacked together to form synthetic heterostructures with emergent electronic and excitonic properties. In this Review, we focus on the emergent exciton physics in moiré superlattices and in TMD heterobilayers coupled to optical cavities, where exciton behaviour can be dramatically modified by the environment. Further, in moiré superlattices, a small twist angle or lattice mismatch between the layers introduces a periodic variation in the interlayer alignment that leads to exciton localization, modified optical selection rules and strong correlations. In cavity–heterostructure systems, light–matter interaction is enhanced and exciton states can couple to the cavity to form exciton-polaritons, whose properties depend on the specific TMD layers involved and their alignment. Here, we discuss recent theoretical and experimental progress towards realizing exotic exciton states in TMD heterobilayers and comment on future scientific and technological directions.

36 MATERIALS SCIENCE↗