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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Radiological Source Term Estimation and Isotopic Identification with Parallel Log Domain Particle Filters

This paper presents a parallel log-domain particle filtering algorithm combined with gamma spectrum unfolding to perform localization, identification, and evaluation of multiple point sources of various isotopes in an environment with attenuating obstacles. The method uses sets of precomputed attenuation kernels that map the attenuation characteristics of the environment. These kernels are specific to the energy level of a photopeak of interest. The spectral measurements are deconvolved into count measurements of each photopeak. These count measurements are fed into a set of parallel particle filters using attenuation kernels computed for that photopeak’s energy level. The individual regularized particle filters perform all likelihood calculations in the logarithmic domain to mitigate the effects of particle degeneracy. The output of each particle filter is combined to estimate which isotopes are present as well as their positions and strengths. The performance of the algorithm is characterized in a lab-scale environment using a mobile robot equipped with a gamma ray spectrometer in the presence of up to three different radioactive isotopes simultaneously. The sources were localized to within 10 cm, and their strengths were estimated within 10% of their true values. Furthermore, the isotopes were all correctly identified, and no spurious sources were reported.

42 ENGINEERING↗
DOE OSTI2021

Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga 2 O 3 with neutron irradiation and forming gas anneals

The gallium vacancy is one of the dominant native point defects in β-Ga 2 O 3 , one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga 2 O 3 surface. These techniques can help guide the understanding and control of dominant native point defects in Ga 2 O 3 .

42 ENGINEERING↗
DOE OSTI2022

K-shell Emission from O vi Near 19 Å

Abstract Laboratory measurements of O vi K-shell emission lines are presented that are situated near the O viii Ly α line at 19 Å. The data provide additional rest-frame references for velocity determinations based on absorption features in the spectra of warm absorbers in active galactic nuclei and other astrophysical objects. They also provide benchmarks for testing atomic structure calculations of energy levels with electrons in a high principal quantum number ( n = 3, 4). Excellent agreement is found with our calculations using the many-body perturbation theory method, and we provide a complete listing of the O vi energy levels calculated with this approach.

Beiersdorfer, Peter (ORCID:000000030127599X)↗
DOE OSTI2025

Effects of Landau quantization on neutrino emission and absorption

Some neutron stars known as magnetars possess very strong magnetic fields, with surface fields as large as 10 15 G and internal fields that are possibly stronger. Recent observations of the radio pulsar GLEAM-X J1627 suggest it may have a surface field as strong as 10 16 G. In the presence of a strong magnetic field, Leinson and Perez showed and Baiko and Yakovlev confirmed that the energy levels of electrons and protons are quantized and the direct Urca process allows neutron stars to cool rapidly, even at low density. For the case of magnetic fields 𝐵 ≳ 10 16 G, we find features in the emissivity due to energy quantization that are not captured by the frequently employed quasiclassical approximation where energy levels are treated as nearly continuous. Resonances can result in amplification of the neutrino emissivity at specific densities compared to a calculation that neglects quantization, particularly at low temperature. These effects are not important for the thermal evolution of an entire neutron star, but may be relevant for phenomena that depend on behavior at specific densities. Here, we present a fully relativistic calculation of the direct Urca rate in a strong magnetic field using the standard V-A weak Lagrangian incorporating mean field nuclear effects and discuss approaches to the numerical challenge the modified wave functions present and a new semianalytic approximation. These tools are also applicable to calculating neutrino opacities in strong magnetic fields in the ejecta of binary neutron star mergers. We calculate the opacities for neutrinos capturing on free nucleons at subsaturation densities and temperatures exceeding an MeV. We find an enhancement to capture processes of the lowest energy neutrinos by an order of magnitude or more due to suppression of electron Pauli blocking in the case of capture on neutrons, and from the effect of the nucleon magnetic moments in the case of capture on protons.

astrophysical electromagnetic fields↗
DOE OSTI2023

Understanding the origin of Tabula Rasa-induced defects in n-type Cz c-Si: The case of nitrogen atmosphere

Phosphorus-doped Czochralski-grown silicon (Cz-Si) has been gaining market share in the large-scale manufacturing of high-efficiency silicon (Si)-based photovoltaic (PV) devices thanks to higher carrier lifetimes than their boron-doped counterpart. However, the fabrication of n-type Cz-Si based solar cells often requires process steps with much higher temperatures and longer times than p-type Silicon. Defect interaction with the high temperatures during such processes tend to be detrimental to the n-type Cz-Si carrier lifetime, therefore limiting the final device efficiency. Short thermal anneals before cell processing, known as Tabula Rasa (TR), have been proposed to mitigate the thermally induced lifetime degradation during n-type Cz-Si solar cell fabrication. This work thoroughly investigates the defects responsible for the lifetime degradation after TR in a N 2 atmosphere treatment. We use temperature-injection-dependent lifetime spectroscopy and the thickness variation method to decouple the effects of TR treatment in the bulk and the surface of the n-type Cz-Si wafers. Using the defect parameter contour mapping (DPCM), we identify the defect energy level (E t ) and the capture cross-section ratio (k) of the most likely process-induced defect, which aligns with previously proposed Si vacancy-associated defects. The DPCM reveals that these vacancy-associated defects have a shallow energy level E t - E v ~0.13 eV and very efficient electron capture cross section k~600. Unexpectedly, the bulk degradation due to vacancy defects in the volume of the wafer, is accompanied by a significant increase in the surface recombination as well. Through evaluating the surface recombination velocity temperature- and injection dependence, we show that after TR, at room temperature and for an injection level of 10 15 cm -3 , in a wafer passivated with a-Si:H(i) the surface recombination dominates the overall lifetime response. Here we hypothesize that the near surface vacancy-associated bulk defects play a role in lowering the electron diffusion current into the a-Si:H(i) from the c-Si(n) reducing the field-effect passivation.

14 SOLAR ENERGY↗
NASA NTRS2019

Performance Measurements of Electric Solid Propellant in an Ablative Pulsed Electric Thruster

Electric solid propellants are advanced solid chemical rocket propellants that can be controlled (ignited, throttled and extinguished) through the application and removal of an electric current. These propellants may also be used for electric in-space propulsion, specifically in the ablative pulsed plasma thruster. In this paper, we will investigate the performance of an electric solid propellant operating in an ablation-fed pulsed plasma device by use of an inverted pendulum micro-Newton thrust stand. Namely, the impulse-per-pulse and the specific impulse of the device using the electric solid propellant will be reported for test runs of 100 pulses and energy levels of 5, 10, 15 and 20 J. Further, the device will also be tested using the current state-of-the-art pulsed plasma thruster propellant, polytetrafluoroethylene. The performance of each propellant will be compared for each energy level using an identical setup and apparatus. This comparison of performance between propellants in a controlled setting will allow for better understanding of previous experimental observations.

Glascock, Matthew S.↗
DOE OSTI2021

Modulating the Electron Affinity of Small Bipyridyl Molecules on Single Gold Nanoparticles for Plasmon-Driven Electron Transfer

Developing controlled platforms for plasmon-driven chemistry is of great importance in catalytic reactions at the nanoscale. We report anion radical formation for five bipyridyl complexes of varying degrees of electron affinity utilizing optically fo-cused intraband (594 nm) and interband (532 nm) pump excitation of single gold nanoparticles. The surface-enhanced Raman scattering (SERS) of anion radicals for the five non-resonant adsorbed molecules 2,2’-bipyridine (22BPY), 4,4’-bipyridine (44BPY), trans-1,2-bis(4-pyridyl)ethylene (BPE), 1,2-bis(4-pyridyl)acetylene (BPA), and 1,2-bis(4-pyridyl)ethane (BPEt) were detected using localized surface-plasmon resonance (LSPR) excitation with 785 nm. The electron affinity of the five bipyridyl complexes were determined using electrochemistry. Molecules with low electron affinity experienced high-er instances of radical anion formation under a plasmon-coupled intraband electron transfer excitation (594 nm) whereas molecules with high electron affinity showed a preference for anion radical formation under direct interband electron trans-fer excitation (532 nm). The lowest unoccupied molecular orbital (LUMO) energy levels for low electron affinity surface-bound molecules (22BPY, BPEt) are on average ~0.43 eV higher for high electron affinity surface-bound molecules (BPA, BPE, 44BPY) as calculated using time-dependent density functional theory, elucidating the importance of plasmon coupling to energy levels that facilitate charge transfer pathways. We also show the ability to ‘activate’ high vs low electron affinity single nanoparticles with the choice of pump excitation wavelength. The findings show the complex interplay between molecular electron affinity, orbital overlap with the density of states of the plasmonic metal, and excitation energetics of the pump laser wavelength. Potential applications of this work include enhanced control over molecular scale catalysis, biosensor design, and solar energy capture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Substitution Effect on Thiobarbituric Acid End Groups for High Open-Circuit Voltage Non-Fullerene Organic Solar Cells

Recent advances in non-fullerene acceptors (NFAs) have resulted in significant improvement in the power conversion efficiencies (PCEs) of organic solar cells (OSCs). In our efforts to boost open-circuit voltage (V OC ) for OSCs, the molecular design employing thiobarbituric acid (TBTA) end groups and an indacenodithieno[3,2-b]thiophene (IDTT) core gives rise to NFAs with significantly raised lowest unoccupied molecular orbital (LUMO) energy level, which, when paired with PCE10, can achieve V OC 's over 1.0 V and decent PCEs that outperform the equivalent devices based on the benchmark ITIC acceptor. While the use of a TBTA end group is effective in tuning energy levels, very little is known about how the alkyl substitution on the TBTA group impacts the solar cell performance. To this end, TBTA end groups are alkylated with linear, branched, and aromatic sidechains to understand the influence on thin-film morphology and related device performances. We report our study has confirmed the dependence of solar cell performance on the end-group substituents. More importantly, we reveal the presence of an ideal window of crystallinity associated with the medium-length hydrocarbon chains such as ethyl and benzyl. Deviation to the shorter methyl group makes the acceptor too crystalline to mix with the polymer donor and form proper domains, whereas longer and branched alkyl chains are too sterically bulky and hinder charge transport due to nonideal packing. Such findings underline the comprehensive nature of thin-film morphology and the subtle end-group effects for the design of non-fullerene acceptors.

14 SOLAR ENERGY↗
NASA NTRS1980

Origin of reverse annealing in radiation-damaged silicon solar cells

The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.

Weinberg, I.↗
DOE OSTI2020

Deep level defects and cation sublattice disorder in ZnGeN 2

The III-nitrides have revolutionized lighting technology and power electronics. Expanding the nitride semiconductor family to include the heterovalent ternary nitrides opens up new and exciting opportunities for device design that may help overcome some of the limitations of the binary nitrides as well as new applications. However, the more complex cation sublattice also gives rise to new complexities with both native and extrinsic defects, such as disorder on the cation sublattice. Here, depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy measurements of defect energy levels in ZnGeN 2 combined with transmission microscopy and crystal lattice diffraction reveal optical signatures of mid-gap states that can be associated with cation sublattice disorder. The energies of these characteristic optical signatures in ZnGeN 2 thin films grown by metal-organic chemical vapor deposition are in good agreement with energy levels predicted by density functional theory for specific thermodynamically stable native point defects. To test the dependence of these defect signatures on crystal atomic composition, we correlated spatially-resolved optical and atomic composition measurements using spatially resolved x-ray photoelectron spectroscopy with systematically varied growth conditions on the same ZnGeN 2 films. The resultant elemental maps versus defect spectral energies and intensities suggest that cation antisite complexes (Zn Ge -Ge Zn ) versus isolated native point defects form preferentially and introduce mid-gap states that dominate electron-hole pair recombination. Complexing of Zn Ge and Ge Zn antisites manifests as disorder in the cation sub-lattice and leads to the formation of wurtzitic ZnGeN 2 as indicated by transmission electron microscopy diffraction patterns and x-ray diffraction (XRD) reciprocal space maps. Furthermore, these findings emphasize the importance of growth conditions to control cation place exchange.

42 ENGINEERING↗
NASA NTRS1982

Electronic levels and charge distribution near the interface of nickel

The energy levels in clusters of nickel atoms were investigated by means of a series of cluster calculations using both the multiple scattering and computational techniques (designated SSO) which avoids the muffin-tin approximation. The point group symmetry of the cluster has significant effect on the energy of levels nominally not occupied. This influences the electron transfer process during chemisorption. The SSO technique permits the approaching atom or molecule plus a small number of nickel atoms to be treated as a cluster. Specifically, molecular levels become more negative in the O atom, as well as in a CO molecule, as the metal atoms are approached. Thus, electron transfer from the nickel and bond formation is facilitated. This result is of importance in understanding chemisorption and catalytic processes.

Waber, J. T.↗
DOE OSTI2024

Midgap state requirements for optically active quantum defects

Abstract Optically active quantum defects play an important role in quantum sensing, computing and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to understand their optoelectronic properties. Optical excitations that are central for their initialization and readout are linked to transitions between occupied and unoccupied single-particle states. It is commonly assumed that only quantum defects introducing levels well within the band gap and far from the band edges are of interest for quantum technologies as they mimic an isolated atom embedded in the host. In this perspective, we contradict this common assumption and show that optically active defects with energy levels close to the band edges can display similar properties. We highlight quantum defects that are excited through transitions to or from a band-like level (bound exciton) such as the T center and Se S i + in silicon. We also present how defects such as the silicon split-vacancy in diamond can involve transitions between localized levels that are above the conduction band or below the valence band. Loosening the commonly assumed requirement on the electronic structure of quantum defects offers opportunities in quantum defects design and discovery especially in smaller band gap hosts such as silicon. We discuss the challenges in terms of operating temperature for photoluminescence or radiative lifetime in this regime. We also highlight how these alternative type of defects bring their own needs in terms of theoretical developments and fundamental understanding. This perspective clarifies the electronic structure requirement for quantum defects and will facilitate the identification and design of new color centers for quantum applications especially driven by first principles computations.

Xiong, Yihuang (ORCID:0000000178096047)↗
DOE OSTI2023

Opacities of singly and doubly ionized neodymium and uranium for kilonova emission modeling

ABSTRACT Even though the electromagnetic counterpart AT2017gfo to the binary neutron star merger GW170817 is powered by the radioactive decay of r-process nuclei, only few tentative identifications of light r-process elements have been made so far. One of the major limitations for the identification of heavy nuclei is incomplete or missing atomic data. While substantial progress has been made on lanthanide atomic data over the last few years, for actinides there has been less emphasis, with the first complete set of opacity data only recently published. We perform atomic structure calculations of neodymium (Z = 60) as well as the corresponding actinide uranium (Z = 92). Using two different codes [flexible atomic code (fac) and hartree–fock-relativistic (hfr)] for the calculation of the atomic data, we investigate the accuracy of the calculated data (energy levels and electric dipole transitions) and their effect on kilonova opacities. For the fac calculations, we optimize the local central potential and the number of included configurations and use a dedicated calibration technique to improve the agreement between theoretical and available experimental atomic energy levels (AELs). For ions with vast amounts of experimental data available, the presented opacities agree quite well with previous estimations. On the other hand, the optimization and calibration method cannot be used for ions with only few available AELs. For these cases, where no experimental nor benchmarked calculations are available, a large spread in the opacities estimated from the atomic data obtained with the various atomic structure codes is observed. We find that the opacity of uranium is almost double the neodymium opacity.

Flörs, A. (ORCID:0000000320242819)↗
NASA NTRS2006

Detection of Ketenimine (CH2CNH) in SGRB2(N) Hot Cores

Ketenimine (CH2CNH) has been detected in absorption toward the starforming region Sagittarius B2(N) with the 100-m Green Bank Telescope (GBT) by means of three rotational transitions: 7(sub 16)-8(sub 08) at 41.5 GHz, 8(sub 19)-9(sub 09), at 23.2 GHz, and 9(sub 18)-10(sub 0,10) at 4.9 GHz. Ketenimine has a sparse rotational spectrum below 50 GHz. From transition line strength arguments, the spectral lines found are the ones most likely to be detected and occur in spectral regions that have little possibility of confusion with other molecular species. Partially resolved hyperfine structure is apparent in the 4.9 GHz transition which has energy levels approximately 50 K above ground state level; the absorption seen in this transition appears to be emanating from gas in close proximity to the LMH hot core that has a systemic LSR velocity of +64 kilometers per second. By comparison, the 41.5 GHz and 23.2 GHz transitions have lower energy levels of approximately 33 K and approximately 41 K, respectively; and show absorption against the two star-forming SgrB2(N) hot cores with systematic LSR velocities of +64 (the LMH) and +82 kilometers per second. These ketenimine data show that the hot core at +82 kilometers per second is cooler than the hot core at +64 kilometers per second. Ketenimine is likely formed directly from its isomer methyl cyanide (CH3CN) by tautomerization driven by shocks that pervade the star-forming region.

Lovas, F. J.↗
NASA NTRS2007

Comparison of Integrated Radiation Transport Models with TEPC Measurements for the Average Quality Factors in Spaceflights

The purpose of this work is to test our theoretical model for the interpretation of radiation data measured in space. During the space missions astronauts are exposed to the complex field of radiation type and kinetic energies from galactic cosmic rays (GCR), trapped protons, and sometimes solar particle events (SPEs). The tissue equivalent proportional counter (TEPC) is a simple time-dependent approach for radiation monitoring for astronauts on board the International Space Station. Another and a newer approach to Microdosimetry is the use of silicon-on-insulator (SOI) technology launched on the MidSTAR-1 mission in low Earth orbit (LEO). In the radiation protection practice, the average quality factor of a radiation field is defined as a function of linear energy transfer (LET), Q(sub ave)(LET). However, TEPC measures the average quality factor as a function of the lineal energy y, Q(sub ave)(y), defined as the average energy deposition in a volume divided by the average chord length of the volume. Lineal energy, y, deviates from LET due to energy straggling, delta-ray escape or entry, and nuclear fragments produced in the detector volume. Monte Carlo track structure simulation was employed to obtain the response of a TEPC irradiated with charged particle for an equivalent site diameter of 1 micron of wall-less counter. The calculated data of the energy absorption in the wall-less counter were compiled for various y values for several ion types at various discrete projectile energy levels. For the simulation of TEPC response from the mixed radiation environments inside a spacecraft, such as, Space Shuttle and International Space Station, the complete microdosimetric TEPC response, f( y, E, Z), were calculated with the Monte Carlo theoretical results by using the first order Lagrangian interpolation for a monovariate function at a given y value (y = 0.1 keV/micron 5000 keV/micron) at any projectile energy level (E = 0.01 MeV/u to 50,000 MeV/u) of each specific radiation type (Z = 1 to 28). Because the anomalous response has been observed at large event sizes in the experiment due to the escape of energy out of sensitive volume by delta-rays and the entry of delta-rays from the high-density wall into the low-density gas-volume cavity, Monte Carlo simulation was also made for the response of a walled-TEPC with wall thickness 2 mm and density 1 g/cm(exp 3). The radius of cavity was set to 6.35 mm and a gas density 7.874 x 10(exp -5) g/cm(exp 3). The response of the walled- and the wall-less counters were compared. The average quality factor Q(sub ave)(y) for trapped protons on STS-89 demonstrated the good agreement between the model calculations and flight TEPC data as shown. Using an integrated space radiation model (this includes the transport codes HZETRN and BRYNTRN, the quantum nuclear interaction model QMSFRG) and the resultant response distribution functions of walled-TEPC from Monte-Carlo track simulations, we compared model calculations with walled-TEPC measurements from NASA missions in LEO and made predictions for the lunar and the Mars missions. The Q(sub ave)(y) values for the trapped or the solar protons ranged from 1.9-2.5. This over-estimates the Qave(LET) values which ranged from 1.4-1.6. Both quantities increase with shield thickness due to nuclear fragmentation. The Q(sub ave)(LET) for the complete GCR spectra was found to be 3.5-4.5, while flight TEPCs measured 2.9-3.4 for Q(sub ave)(y). The GCR values are decreasing with the shield thickness. Our analysis for a proper interpretation of data supports the use of TEPCs for monitoring space radiation environment.

Kim, Myung-Hee Y.↗
DOE OSTI2020

New Polarizability Functions for Calculating Atomic Hydrogen S State Spectral Lines in Exact Agreement with NIST Measurements

This paper presents a new approach to calculating atomic hydrogen energy levels which is simple, fast and accurate. One advantage of this new approach is the ability to explicitly incorporate the polarizability resulting from a scattering event between a hydrogen atom and a photon. The polarizability effect is small but significant, producing exact S state spectral energies. The general calculational approach is applicable to both atomic hydrogen and multi-electron energy levels. Although motivated by the multi-electron case for chemistry applications, the focus of this paper will be calculations that are specific to atomic hydrogen which include the polarizability.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

First-principles modeling of conductivity at the (001), (110), and (111) SrTiO 3 /LaAlO 3 heterointerfaces

Here, the complex polar oxide heterojunction of SrTiO 3 /LaAlO 3 (STO/LAO) is of great interest due to the emergent physical phenomena observed at the interface. STO and LAO separately are wide band-gap insulators. However, upon joining them at the 001, 110, and 111 crystallographic planes, the interface undergoes a transition to a conductive state. Although first-principles modeling of the 001 plane interface has been widely studied, there is a lack of reports regarding the 110 and 111. This paper expands the theoretical model of the STO/LAO heterointerface to the three crystallographic planes (001, 110, and 111) where the conductivity has been experimentally reported. The calculations showed that whereas at the 001 interface the conductivity appears at a critical thickness of 4 monolayers of LAO, the 110 and 111 planes have no clear critical thickness; these two interfaces were always conductive. Nevertheless, the number of conductive electrons per unit cell increases with the thickness of the LAO layer in the 110 and 111 interfaces. This is related to the energy levels downshifting due to the electrostatic potential buildup (which was in the opposite direction respect to the 001 interface), increasing the number of conductive sates below the Fermi level. Given the absence of a critical thickness and the fact that chemical intermixing and oxygen vacancies at the interface were not considered, the main mechanism responsible for the conductivity in the 110 and 111 planes was attributed to the large structure reconstruction that locally changes the energy levels at the interface causing charge transfer and accumulation at the layers close to the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Trap-assisted Auger-Meitner recombination in GaN p-i-n diodes

Most properties of semiconductor devices are dominated by shallow impurities. However, deep defects often play an important role, for instance, in recombination processes or high field transport. While a variety of techniques are available to assess the density and energy levels of impurities, other properties, such as the recombination mechanisms of the defects, escape observation. We report on the direct measurement of hot electrons generated by trap-assisted Auger-Meitner recombination (TAAR) in GaN p-i-n diodes. By performing electron emission spectroscopy (EES) on diodes with surfaces activated to negative electron affinity by cesium, we observe the expected overflow electrons of p-i-n diodes under low current injection. However, when operating the devices at higher current densities, as low as ∼25 A/c⁢m 2 , we measure the emission of high-energy electrons. At variance with the observed hot electrons in light-emitting diodes (LEDs) using EES, the hot electrons generated in p-i-n diodes at our tested currents cannot be from eeh Auger-Meitner recombination due to the diodes' significantly lower carrier densities compared to those in LEDs. During our measurements, we observe the emission of accumulated electrons with energies ∼0.42 eV, ∼0.99 eV, ∼1.43 eV, and ∼2.32 eV above the conduction-band minimum (CBM) at various bias conditions, suggesting the existence of conduction-band features in GaN at these energies where electrons can be long-lived, such as satellite-valley minima and inflection points. We also measure incompletely relaxed hot electrons approaching energies 1.97 ± 0.13 eV and 2.94 ± 0.13 eV above the CBM, as the diodes are biased to high currents, suggesting at least some of the TAAR partaking defects have an energy level ≳1.97 eV and ≳2.94 eV away from either the conduction or valence band edges. Additionally, at our highest operating currents, we measure hot electrons with energies 3.28 ± 0.13 eV above the CBM, providing direct evidence of TAAR processes involving shallow impurities. This unexpected observation of TAAR in GaN p-i-n diodes spotlights the importance of further studies of defects in GaN and the necessity to incorporate the multi-phonon emission, radiative, and TAAR capture steps of defect-assisted recombination cycles into device modeling. Furthermore, this experiment demonstrates the applicability of the simplest semiconductor structures, p-i-n diodes, as a test bed to study the rich recombination physics of semiconductor materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗