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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Evidence for nitrogen binding to surface defects for topological insulator Bi 2 Se 3

Using scanning tunneling spectroscopy and theoretical simulations we have studied the effects of nitrogen gas exposure on the electronic density of states of Bi 2 Se 3 , a well-studied topological insulator. In carefully controlled measurements, Bi 2 Se 3 crystals were initially cleaved in a helium gas environment and then exposed to a 22 SCFH flow of ultra-high purity N 2 gas. We observe a resulting change in the spectral curves, with the exposure effect saturating after approximately 50 min, ultimately bringing the Dirac point about 50 meV closer to the Fermi level. Furthermore, these results are compared to density functional theory calculations, which support a picture of N 2 molecules physisorbing near Se vacancies. Furthermore, ab initio molecular dynamics simulations aided by a Blue Moon ensemble method reveal the dissociative adsorption of N 2 molecules which then bind strongly to Se vacancies at the surface. In this scenario, the binding of the N atom to a Se vacancy site removes the surface defect state created by the vacancy and changes the position of the Fermi energy with respect to the Dirac point.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological band structure transitions and goniopolar transport in honeycomb antimonene as a function of buckling

The electronic band topology of monolayer β-Sb (antimonene) is studied from the flat honeycomb to the equilibrium buckled structure using first-principles calculations and analyzed using a tight-binding model and low-energy Hamiltonians. In flat monolayer Sb, the Fermi level occurs near the intersection of two warped Dirac cones, one associated with the pz orbitals, and one with the {p x , p y } orbitals. The differently oriented threefold warping of these two cones leads to an unusually shaped nodal line, which leads to anisotropic in-plane transport properties and goniopolarity. A slight buckling opens a gap along the nodal line except at six remaining Dirac points, protected by symmetry. Under increasing buckling, pairs of Dirac points of opposite winding number annihilate at a critical buckling angle. At a second critical angle, the remaining Dirac points disappear when the band structure opens a gap. Spin-orbit coupling and edge states are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Manipulating topological properties in Bi 2 Se 3 / BiSe /transition metal dichalcogenide heterostructures with interface charge transfer

Heterostructures of topological insulator Bi 2 Se 3 on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and magnetic orders. Here, the diverse interface attributes, such as material combination, charge re-arrangement, defect and strain, can be utilized to manipulate the quantum properties of this class of materials. Recent experiments of Bi 2 Se 3 /NbSe 2 heterostructures show signatures of strong Rashba band splitting due to the presence of a BiSe buffer layer, but the atomic level mechanism is not fully understood. We conduct first-principles studies of the Bi 2 Se3/BiSe/TMDC heterostructures with five different TMDC substrates (1T phase VSe 2 , MoSe 2 , TiSe 2 , and 2H phase NbSe 2 , MoSe 2 ). We find significant charge transfer at both BiSe/TMDC and Bi 2 Se 3 /BiSe interfaces driven by the work function difference, which stabilizes the BiSe layer as an electron donor and creates interface dipole. The electric field of the interface dipole breaks the inversion symmetry in the Bi 2 Se 3 layer, leading to the giant Rashba band splitting in two quintuple layers and the recovery of the Dirac point in three quintuple layers, with the latter otherwise only occurring in thicker samples with at least six Bi 2 Se 3 quintuple layers. Besides, we find that strain can significantly affect the charge transfer at the interfaces. Our study presents a promising avenue for tuning topological properties in heterostructures of two-dimensional materials, with potential applications in quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Magnetic and electronic structures of antiferromagnetic topological material candidate EuMg 2 Bi 2

In this work, EuMg 2 Bi 2 has been investigated to understand the electronic and magnetic behaviors as an antiferromagnetic (AFM) topological semimetal candidate. High-quality single crystals of EuMg 2 Bi 2 were grown via a Bi flux and, subsequently, characterized to be consistent with the previously reported bulk magnetic and resistivity properties. A ferromagnetic interaction is indicated by the positive Curie–Weiss temperature obtained through fitting the bulk magnetic susceptibility data. The bulk resistivity measurements reveal an interesting electronic behavior that is potentially influenced by a competing antiferromagnetic and ferromagnetic interaction in and out of the ab plane. From the resulting refinement of the neutron diffraction data, EuMg 2 Bi 2 was found to exhibit an A-type magnetic structure with Eu 2+ moments ferromagnetically aligned in the plane and antiferromagnetically stacked between neighbor ferromagnetic Eu layers. The power law fitting magnetic ordering parameter below TN~8 K agrees with the 2D Heisenberg model, indicating a weak interlayer antiferromagnetic interaction. Considering the magnetic structure determined by neutron diffraction, the surface state calculation suggests that EuMg 2 Bi 2 is an AFM topological insulator candidate. Linearly dispersed Dirac surface states were also observed in our angle-resolved photoemission spectroscopy measurements, consistent with the calculation.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Epitaxial 2D Magnet and Topological Insulator Heterostructures

I will discuss our latest advances on the epitaxial growth of 2D van der Waals (vdW) magnets and their integration with topological insulators (TI). This work is motivated by the realization of topological phases such as the quantum anomalous Hall effect and highly efficient spin-orbit torque produced by TIs. Our initial studies of MnSe2 growth on Bi2Se3 showed a tendency for the interdiffusion of Mn into the Bi2Se3. This ultimately led to the synthesis of MnBi2Se4 (MBS), a new magnetic TI. Interestingly, the vdW phase is not the thermodynamically stable phase and bulk crystals do not exist, so the epitaxial stabilization of MBS creates the opportunity to explore the magnetic and topological properties of this material. We find that MBS is a layered antiferromagnet, similar to MnBi2Te4, but a difference is that the magnetic moments lie in the plane of the film. Angle resolved photoemission experiments show the presence of a topological surface state with Dirac dispersion. For bilayers of 2D magnets and TIs, we have developed FGT films on Bi2Te3. We first optimized FGT by studying its growth on Ge(111) substrates, where we find that kinetic considerations play a major role. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111). Subsequently, we have developed the growth of FGT on Bi2Te3 for the integration of 2D magnets with Tis. Interestingly, we observe room temperature ferromagnetism in FGT/Bi2Te3 heterostructures by varying the growth conditions.

Kawakami, Roland↗
DOE OSTI2021

Atomic forces from Dirac-Kohn-Sham equations: Implementation in flexible (APW+lo/LAPW)+LO basis set

The atomic forces formulation based on the Dirac-Kohn-Sham equation and the flexible (APW+lo/LAPW)+LO basis set is presented here. The formulation was implemented in the code FlapwMBPT and allows a user to easily switch between different basis functions of the augmentation type (APW or LAPW) and between different kind of local orbitals. Similar to the work (Phys.Rev.B 91 (2015) 035105), the implementation takes into account small discontinuities of the wave functions, density, and potential at the muffin-tin sphere boundaries. Applications to the materials with strong relativistic effects, such as $\alpha$-Uranium, PuCoGa$_{5}$, and FePt, demonstrate robustness of the method. The comparison of the calculated forces with the ones obtained by numerical differentiation of free energy shows close agreement with deviations about 0.1% or less.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Topological Electronic Structure Evolution with Symmetry Breaking Spin Reorientation in (Fe 1–x Co x )Sn

Topological materials hosting kagome lattices have drawn considerable attention due to the interplay between topology, magnetism, and electronic correlations. The (Fe 1–x Co x )Sn system not only hosts a kagome lattice but has a tunable symmetry-breaking magnetic moment with temperature and doping. In this study, angle-resolved photoemission spectroscopy and first-principles calculations are used to investigate the interplay between the topological electronic structure and varying magnetic moment from the planar to axial antiferromagnetic phases. Here, evidence for a theoretically predicted gap at the Dirac point is revealed in the low-temperature axial phase, but no gap opening is observed across a temperature-dependent magnetic phase transition. However, topological surface bands are observed to shift in energy as the surface magnetic moment is reduced or becomes disordered over time during experimental measurements. The shifting surface bands may preclude the determination of a temperature-dependent bulk gap, but this highlights the intricate connections between magnetism and topology with a surface/bulk dichotomy that can affect material properties and their interrogation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Realizing gapped surface states in the magnetic topological insulator Mn Bi 2 - x Sb x Te 4

The interplay between magnetism and nontrivial topology in magnetic topological insulators (MTIs) is expected to give rise to exotic topological quantum phenomena like the quantum anomalous Hall effect and the topological axion states. A key to assessing these novel properties is to realize gapped topological surface sates. MnBi 2 Te 4 possesses nontrivial band topology with an intrinsic antiferromagnetic state. However, the highly electron-doped nature of the MnBi 2 Te 4 crystals obstructs the exhibition of the surface band gap. Here, we tailor the material through Sb substitution to reveal the gapped surface states in MnBi 2-x Sb x Te 4 . By shifting the Fermi level into the bulk band gap, we access the surface states and show a band gap of 50 meV at the Dirac point from quasiparticle interference measured by scanning tunneling microscopy (STM). Surface-dominant conduction is confirmed through transport spectroscopy measured by multiprobe STM below the Néel temperature. The surface band gap is robust against the out-of-plane magnetic field despite the promotion of field-induced ferromagnetism. Finally, the realization of bulk-insulating MTIs with the large exchange gap offers a promising platform for exploring emergent topological phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

CsV 3 Sb 5 : A $\mathbb{Z}_2$ Topological Kagome Metal with a Superconducting Ground State

Recently discovered alongside its sister compounds KV 3 Sb 5 and RbV 3 Sb 5 , CsV 3 Sb 5 crystallizes with an ideal kagome network of vanadium and antimonene layers separated by alkali metal ions. This work presents the electronic properties of CsV 3 Sb 5 , demonstrating bulk superconductivity in single crystals with a T c = 2.5 K. The normal state electronic structure is studied via angle-resolved photoemission spectroscopy and density-functional theory, which categorize CsV 3 Sb 5 as a Z 2 topological metal. Multiple protected Dirac crossings are predicted in close proximity to the Fermi level (E F ), and signatures of normal state correlation effects are also suggested by a high-temperature charge density wavelike instability. Finally, the implications for the formation of unconventional superconductivity in this material are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

Manipulating the electronic properties of graphene has been a subject of great interest since it can aid material design to extend the applications of graphene to many different areas. Here, we systematically investigate the effect of lead (Pb) intercalation on the structural and electronic properties of epitaxial graphene on the SiC(0001) substrate. We show that the band structure of Pb-intercalated few-layer graphene can be effectively tuned through changing intercalation conditions, such as coverage, location of Pb, and the initial number of graphene layers. Lead intercalation at the interface between the buffer layer (BL) and the SiC substrate decouples the BL from the substrate and transforms the BL into a p-doped graphene layer. We also show that Pb atoms tend to donate electrons to neighboring layers, leading to an n-doping graphene layer and a small gap in the Dirac cone under a sufficiently high Pb coverage. This paper provides useful guidance for manipulating the electronic properties of graphene layers on the SiC substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Disorder-induced spin-cluster magnetism in a doped kagome spin liquid candidate

The search for new quantum spin liquid materials relies on systems with strong frustration such as spins on an ideal kagome lattice. However, lattice imperfections can have substantial effects which are as yet not well understood. In recent work, the two-dimensional kagome system YCu 3 ⁢(OH) 6 ⁢[(Cl 𝑥 ⁢Br (1−𝑥) ) 3−𝑦 ⁢(OH) 𝑦 ] has emerged as a leading candidate hosting a Dirac spin liquid which appears to survive at least for 𝑥 < 0.4, associated with alternating-bond-hexagon (ABH) disorder. Here in magnetic samples with 𝑥 = 0.58, 𝑦 = 0.1 we report unusual in-plane ferromagnetic canting (FM) of the in-plane antiferromagnet (AFM), with an unusually wide regime of short-ranged order, and propose theoretical models to explain this behavior. First, we show that Kitaev-type exchanges naturally arise on the kagome lattice to second order in the known Dzyaloshinskii-Moriya exchanges, and that these interactions can produce the unusual in-plane FM canting from antichiral AFM. Second, we propose a phenomenological model of weakly FM-canted spin clusters to describe the short-ranged regime and analyze quantum fluctuations in an ABH toy model to show how ABH disorder can stabilize this regime. Here, the combination of experimental observation and theory suggests that kagome-Kitaev interactions and ABH disorder are necessary for describing the magnetic fluctuations in this family of materials, with potential implications for the proposed proximate spin liquid phase.

Seth, Arnab [Georgia Institute of Technology, Atla↗
DOE OSTI2025

Superconductivity and a van Hove singularity confined to the surface of a topological semimetal

The interplay between topology and superconductivity generated great interest in condensed matter physics. Here, we unveil an unconventional two-dimensional superconducting state in the Dirac nodal line semimetal ZrAs 2 which is exclusively confined to the top and bottom surfaces within the crystal's ab plane. As a remarkable consequence, we present the first clear evidence of a Berezinskii-Kosterlitz-Thouless (BKT) transition occurring solely on a material's surface-specifically, ZrAs 2 -unlike the inconsistent reports on PtBi 2 , CaAgP, and CaAg 1-x Pd x P. Furthermore, we find that these same surfaces also host a two-dimensional van Hove singularity near the Fermi energy. This leads to enhanced electronic correlations that contribute to the stabilization of superconductivity at the surface of ZrAs 2 . The'surface-confined nature of the van Hove singularity and associated superconductivity, realized for the first time, allows exploring the interplay between low-dimensional quantum topology and superconductivity in a bulk material without resorting to the superconducting proximity effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Emergent topological quantum orbits in the charge density wave phase of kagome metal CsV 3 Sb 5

The recently discovered kagome materials AV 3 Sb 5 (A = K, Rb, Cs) attract intense research interest in intertwined topology, superconductivity, and charge density waves (CDW). Although the in-plane 2 × 2 CDW is well studied, its out-of-plane structural correlation with the Fermi surface properties is less understood. In this work, we advance the theoretical description of quantum oscillations and investigate the Fermi surface properties in the three-dimensional CDW phase of CsV 3 Sb 5 . We derived Fermi-energy-resolved and layer-resolved quantum orbits that agree quantitatively with recent experiments in the fundamental frequency, cyclotron mass, and topology. We reveal a complex Dirac nodal network that would lead to a π Berry phase of a quantum orbit in the spinless case. However, the phase shift of topological quantum orbits is contributed by the orbital moment and Zeeman effect besides the Berry phase in the presence of spin-orbital coupling (SOC). Therefore, we can observe topological quantum orbits with a π phase shift in otherwise trivial orbits without SOC, contrary to common perception. Our work reveals the rich topological nature of kagome materials and paves a path to resolve different topological origins of quantum orbits.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Epitaxial Integration of Dirac Semimetals with Si(001)

Topological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconductor substrates will ultimately be required to maximize their technological reach. Here, epitaxial growth of the Dirac semimetal Cd3As2 on Si(001) is demonstrated through two routes. First, Cd3As2(112) epilayers are grown on Si(001) via an intermediate CdTe(111) buffer layer. Second, Cd3As2(112) is grown directly on Si(001). This work sets the foundation for integration of novel semimetal materials with existing CMOS technology.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Modified Dirac Fermions in the Crystalline Xenon and Graphene Moiré Heterostructure

Abstract The interface between two‐dimensional (2D) crystals often forms a Moiré superstructure that imposes a new periodicity, which is a key element in realizing complex electronic phases as evidenced in twisted bilayer graphene. Acombined angle‐resolved photoemission spectroscopy measurements and first‐principles calculations reveal the formation of a Moiré superstructure between a 2D Dirac semi‐metallic crystal, graphene, and a 2D insulating crystal of noble gas, xenon. Incommensurate diffraction pattern and folded Dirac cones around the Brillouin zone center imply the formation of hexagonal crystalline array of xenon atoms. The velocity of Dirac fermions increases upon the formation of the 2D xenon crystal on top of graphene due to the enhanced dielectric screening by the xenon over‐layer. These findings not only provide a novel method to produce a Moiré superstructure from the adsorption of noble gas on 2D materials, but also to control the physical properties of graphene by the formation of a graphene‐noble gas interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Large-scale 2D heterostructures from hydrogen-bonded organic frameworks and graphene with distinct Dirac and flat bands

The current strategies for building 2D organic-inorganic heterojunctions involve mostly wet-chemistry processes or exfoliation and transfer, leading to interface contaminations, poor crystallizing, or limited size. Here we show a bottom-up procedure to fabricate 2D large-scale heterostructure with clean interface and highly-crystalline sheets. As a prototypical example, a well-ordered hydrogen-bonded organic framework is self-assembled on the highly-oriented-pyrolytic-graphite substrate. The organic framework adopts a honeycomb lattice with faulted/unfaulted halves in a unit cell, resemble to molecular “graphene”. Interestingly, the topmost layer of substrate is self-lifted by organic framework via strong interlayer coupling, to form effectively a floating organic framework/graphene heterostructure. The individual layer of heterostructure inherits its intrinsic property, exhibiting distinct Dirac bands of graphene and narrow bands of organic framework. Our results demonstrate a promising approach to fabricate 2D organic-inorganic heterostructure with large-scale uniformity and highly-crystalline via the self-lifting effect, which is generally applicable to most of van der Waals materials.

36 MATERIALS SCIENCE↗