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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Regulated high efficiency, lightweight capacitor-diode multiplier dc to dc converter

A voltage multiplier having a capacitor-diode voltage multiplying network is disclosed which is fed with voltage pulses from a dc source through a first switching means. Pulses of a second polarity are also supplied through a second switching means to the input of the capacitor-diode voltage multiplier from a second dc source whose voltage is adjustable to change the voltage of the pulses of second polarity. The switching means are alternately rendered conducting by signals from a control circuit. The second dc source may be controlled by a voltage comparator which compares the output voltage of the capacitor-diode voltage multiplier to the reference source.

Harrigill, W. T., Jr.↗
NASA NTRS1979

Shock isolator for operating a diode laser on a closed-cycle refrigerator

A diode laser mounted within a helium refrigerator is mounted using a braided copper ground strap which provides good impact shock isolation from the refrigerator cold-tip while also providing a good thermal link to the cold-tip. The diode mount also contains a rigid stand-off assembly consisting of alternate sections of nylon and copper which serve as cold stations to improve thermal isolation from the vaccum housing mounting structure. Included in the mount is a Pb-In alloy wafer inserted between the cold-tip and the diode to damp temperature fluctuations occurring at the cold-tip.

Jennings, D. E.↗
NASA NTRS1979

Thermic diode performance characteristics and design manual

Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

Bernard, D. E.↗
NASA NTRS1981

The millimeter wave super-Schottky diode detector

The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.

Silver, A. H.↗
NASA NTRS1981

Improved liquid phase epitaxial GaAs for low series resistance Schottky barrier mixer diodes

Millimeter wave Schottky barrier mixer diodes are extremely important devices for radio astronomy. The performance of the Schottky diodes depends largely on the characteristics and quality of the GaAs epitaxial materials used. Systematic manipulation of the liquid phase epitaxial growth conditions and substrate surface treatments has yielded significantly improved surface morphology. Initial problems of high resistivity interfacial layers have been reduced without the use of an in situ etchback. Two-micron diameter Schottky diodes fabricated from epitaxial layers grown at 725 C exhibit a 9-ohm series resistance very near the theoretical minimum.

Binari, S. C.↗
NASA NTRS1981

Schlieren with a laser diode source

The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

Burner, A. W.↗
NASA NTRS1984

IC Fabrication Methods Improve Laser Diodes

Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.

Miller, M.↗
NASA NTRS1983

A 20-GHz IMPATT diode development

The development of 20 GHz, double drift GaAs IMPATT diodes is described. Advances made in material growth, diodes fabrication technology and packaging, and circuit design and diode testing are documented.

Masse, D.↗
NASA NTRS1984

High efficiency IMPATT diodes for 60 GHz intersatellite link applications

Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. The development of high efficiency 60 GHz IMPATT diodes by NASA is described.

Haugland, E. J.↗
NASA NTRS1984

Shunt Diode Designs in Li/cf Shuttle Batteries

Although Li/CF cells and batteries have an excellent safety record, they are included with other battery systems that require additional safety precautions. One precaution suggested is the inclusion of shunt diodes into these batteries. The benefits of this addition are examined. All cells tested at elevated temperatures vent regardless of length of time between being fully discharged and reversed or inclusion of the diode in the system. Cells discharged at ambient temperatures all show a relatively quick reversal, but stabilize at voltages that are high enough that the diodes are not functioning. Cells tested at depressed temperatures reverse the deepest of all cells tested, with the deepest reversal occurring very early in the test and voltages recovering to above -0.60 volts near the end of the tests. Anode limited cells will eliminate the venting during hot reversal.

Miller, D.↗
NASA NTRS1984

High efficiency IMPATT diodes for 60 GHz intersatellite link applications

Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. This paper describes the development of high efficiency 60 GHz IMPATT diodes by NASA. These programs are cofunded by the U.S. Air Force, Space Division.

Haugland, E. J.↗
NASA NTRS1983

Tunable diode lasers for 3-30 micron infrared operation

The tunable diode laser is now widely used in high resolution infrared spectroscopy studies, taking into account laboratory and industrial applications. The present investigation is concerned with advances related to laser performance and reliability. The advances are the result of improvements in materials and device technologies. Reliability data for broad-area Pb(1-x)Sn(x)Se lasers are considered along with performance improvements in stripe-geometry lasers, laser performance at wavelengths above 25 microns, and laser performance at wavelengths below 4 microns. Attention is given to tunable Pb-salt infrared diode lasers, mesa-stripe geometry lasers of Pb(1-x)Sn(x)Se and PbS(1-x)Se(x), and long wavelength diode laser emission observed in both Pb(1-x)Sn(x)Te and Pb(1-x)Sn(x)Se.

Linden, K. J.↗
NASA NTRS1984

NASA seeking high-power 60-GHz IMPATT diodes

Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT).

Haugland, E. J.↗
NASA NTRS1984

Diode laser 87Rb optical pumping in an evacuated wall-coated cell

The evacuated wall coated sealed cell coupled with diode laser optical pumping offers a number of attractive potential advantages for use in Rb or Cs atomic frequency standards. An investigation of systematic effects is required to explore possible limitations of the technique. The use of diode laser optical pumping of 87 Rb in an evacuated wall coated sealed cell is presented. Experimental results/discussion to be presented include the signal strength and line broadening of the 0 - 0 hyperfine resonance as a function of light intensity for the D1 optical transitions (F - F prime) - (2 1 prime) and (2 - 2 prime), shift of the 0 - 0 hyperfine frequency as a function of laser intensity and de-tuning from optical resonance, and diode laser frequency stabilization techniques.

Lee, W. K.↗
NASA NTRS1984

Direct-current polarization characteristics of various AlGaAs laser diodes

Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

Fuhr, P. L.↗
NASA NTRS1984

An improved forward I-V method for nonideal Schottky diodes with high series resistance

Two methods are described to obtain the value of the series resistance (R) of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V sub D (= V - IR) which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height of the diode then follow from the standard procedure. The main advantages of the methods are: (1) a linear regression can be used to calculate the value of R; (2) many data points are used over the whole data range, which raises the accuracy of the results, and (3) the validity of constant R assumption can be checked by the linearity of the ln (I) versus V sub D curve. The methods are illustrated on the experimental data of a real diode.

Lien, C.-D.↗
NASA NTRS1985

Development of design criteria and qualification tests for bypass diodes in photovoltaic applications

Design criteria have been developed for bypass diodes in p-n and Schottky barrier in photovoltaic applications. A test method for assessing conformity to the design criteria is described. Junction temperatures are defined in terms of expected worst-case field conditions, including ambient temperature and solar irradiance on the photovoltaic module. The rating criteria address the maximum allowable current and heat-sink characteristics of diodes mounted inside or outside the photovoltaic module. The method establishes worst-case module-to-diode thermal interfaces and may be adapted for laboratory or field-site experiments. A list of the design criteria is given.

Otth, D. H.↗