SEARCH · Engineering Papers

Results for “CONTACTS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 253 records · Page 14

All sources NASA NTRS DOE OSTI

DOE OSTI2021

Zwicky Transient Facility and Globular Clusters: the Period–Luminosity and Period–Luminosity–Color Relations for Late-type Contact Binaries

In this work, we aimed to derive the gri-band period–luminosity (PL) and period–luminosity–color (PLC) relations for late-type contact binaries, for the first time, located in globular clusters, using the homogeneous light curves collected by the Zwicky Transient Factory (ZTF). We started with 79 contact binaries in 15 globular clusters, and retained 30 contact binaries in 10 globular clusters that have adequate numbers of data points in the ZTF light curves and are unaffected by blending. Magnitudes at mean and maximum light of these contact binaries were determined using a fourth-order Fourier expansion, while extinction corrections were done using the Bayerstar2019 3D reddening map together with adopting the homogeneous distances to their host globular clusters. After removing early-type and “anomaly” contact binaries, our derived gri-band PL and period–Wesenheit (PW) relations exhibited a much larger dispersion with large errors on the fitted coefficients. Nevertheless, the gr-band PL and PW relations based on this small sample of contact binaries in globular clusters were consistent with those based on a larger sample of nearby contact binaries. Good agreements of the PL and PW relations suggested both samples of contact binaries in the local Solar neighborhood and in the distant globular clusters can be combined and used to derive and calibrate the PL, PW, and PLC relations. The final derived gr-band PL, PW, and PLC relations were much improved over those based on the limited sample of contact binaries in the globular clusters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1990

Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7

Virtually every device that makes use of the new ceramic superconductors will need normal conductor to supercondutor contacts. The current-voltage and electrical noise characteristics of these contacts could be become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quanity often used to characterize electrical noise, very closely followed an empirical relationship given by, S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.

Hall, J.↗

NASA NTRS1991

Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7

Virtually every device that makes use of the new ceramic superconductors will need normal conductor to superconductor contacts. The current-voltage and electrical noise characteristics of these contacts could become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quantity often used to characterize electrical noise, very closely followed an empirical relationship given by S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.

Hall, J.↗

NASA NTRS1986

Method for contact resistivity measurements on photovoltaic cells and cell adapted for such measurement

A method is disclosed for scribing at least three grid contacts of a photovoltaic cell to electrically isolate them from the grid contact pattern used to collect solar current generated by the cell, and using the scribed segments for determining parameters of the cell by a combination of contact end resistance (CER) measurements using a minimum of three equally or unequally spaced lines, and transmission line modal (TLM) measurements using a minimum of four unequally spaced lines. TLM measurements may be used to determine sheet resistance under the contact, R.sub.sk, while CER measurements are used to determine contact resistivity, .rho..sub.c, from a nomograph of contact resistivity as a function of contact end resistance and sheet resistivity under the contact. In some cases, such as the case of silicon photovoltaic cells, sheet resistivity under the contact may be assumed to be equal to the known sheet resistance, R.sub.s, of the semiconductor material, thereby obviating the need for TLM measurements to determine R.sub.sk.

Burger, Dale R.↗

NASA NTRS1991

The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

Weizer, Victor G.↗

DOE OSTI2015

Dual contact pogo pin assembly

A contact assembly includes a base and a pair of electrical contacts supported by the base. A first end of the first electrical contact corresponds to a first end of the base and is configured to engage a first external conductive circuit element. A first end of the second electrical contact also corresponds to the first end of the base and is configured to engage a second external conductive circuit element. The first contact and the second contact are electrically isolated from one another and configured to compress when engaging an external connector element. The base includes an aperture positioned on a second end of the base outboard of a second end of the first and second electrical contacts. The aperture presents a narrowing shape with a wide mouth distal the electrical contacts and a narrow internal through-hole proximate the electrical contacts.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2016

Dual contact pogo pin assembly

42 ENGINEERING↗

DOE OSTI2019

Scanning Kelvin Probe Microscopy: A Tool to Investigate Nano-Scale Doping Non-Uniformities in Poly-Si/SiOx Contacts: Preprint

Monocrystalline Si (c-Si) solar cells with passivated contacts based on the ultrathin SiOx and doped polycrystalline Si (poly-Si) layers in a poly-Si/SiOx/c Si structure show high solar cell efficiencies that are ~26%. Excellent surface passivation using these contacts is achieved via the combined effects of chemical passivation of the SiOx/c-Si interface by the SiOx layer and field-effect passivation from the heavily doped poly-Si layer. These contacts give best performance only when annealed to temperatures higher than 850 degrees C. Structural changes in the SiOx layer and dopant diffusion from poly-Si into the underlying c-Si wafer occur during this step which are hard to investigate using conventional characterization techniques. In this work we investigate poly-Si/SiOx contacts with both a 1.5 (tunneling transport) and 2.2 (pinhole transport) nm SiOx layer using atomic force microscopy techniques. Conductive AFM on n+-poly-Si/SiOx/p-Si structures show significant spatial variations for both contact types, likely due to non-uniformities in the poly-Si layer itself. The electrical and structural variations deeper into the contact were revealed by scanning Kelvin probe microscopy after precisely etching away the poly-Si and SiOx layers and few nanometers of c-Si surface. This etching was performed using tetramethylammonium hydroxide and dilute HF solutions. The resulting surface potential maps appear similar for both contacts, and show less than 500 nm size heavily-doped regions. However, further etching of the c-Si surface reveals these heavily-doped regions to be less than 200 nm deep for the 2.2 nm SiOx contact and greater than 200 nm deep for the 1.5 nm SiOx contact.

14 SOLAR ENERGY↗

DOE OSTI2015

Low cost back contact heterojunction solar cells on thin c-Si wafers. Integrating laser and thin film processing for improved manufacturability

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.

14 SOLAR ENERGY↗

DOE OSTI2020

Enabling Efficiencies > 22.5% with Metal Oxide Passivating Contacts using Low-Cost Spatial Atomic Layer Deposition (Final Technical Report)

In this project, the University of Central Florida (UCF) worked to both increase module efficiency and reduce manufacturing cost by driving demonstrated lab-scale passivating contact technology using materials and processes compatible with high-volume manufacturing for crystalline silicon (c-Si) photovoltaic (PV) cells. Passivating contacts have garnered significant attention in recent years. They provide a means of suppressing contact recombination, a loss mechanism that limits the performance of industrially relevant cell architectures like Al back surface field (Al-BSF) cells and passivated emitter and rear cells (PERC). Most of the development of passivating contact technology has focused on the use of doped amorphous silicon or doped polysilicon contacts, but both suffer from parasitic optical absorption amongst other issues. Our team developed fully transparent hole-selective heterojunctions, deposited using atomic layer deposition (ALD), and showed how they could be incorporated into c-Si PV cells. The team conducted experiments to understand the process-structure-property relationship of hole-selective oxides, surface passivation oxide materials, and transparent conductive oxides deposited by ALD, and use that understanding to reduce contact recombination, contact resistivity, and parasitic optical absorption within c-Si PV cells. Before getting into the details of the report, we would like to note that COVID-19 has made it more challenging to conduct experimental research at UCF. UCF has a number of mandatory policies in place to ensure social distancing, testing, and contact tracing are all carried out in day-to-day operations. Despite these challenges, we worked diligently to make progress on this project in a manner that was as safe as possible. Over the course of the project, the UCF team and its collaborators have made the following discoveries and developments.

14 SOLAR ENERGY↗

DOE OSTI2015

An MPI + $X$ implementation of contact global search using Kokkos

This paper describes an approach that seeks to parallelize the spatial search associated with computational contact mechanics. In contact mechanics, the purpose of the spatial search is to find “nearest neighbors,” which is the prelude to an imprinting search that resolves the interactions between the external surfaces of contacting bodies. In particular, we are interested in the contact global search portion of the spatial search associated with this operation on domain-decomposition-based meshes. Specifically, we describe an implementation that combines standard domain-decomposition-based MPI-parallel spatial search with thread-level parallelism (MPI-X) available on advanced computer architectures (those with GPU coprocessors). Our goal is to demonstrate the efficacy of the MPI-X paradigm in the overall contact search. Standard MPI-parallel implementations typically use a domain decomposition of the external surfaces of bodies within the domain in an attempt to efficiently distribute computational work. This decomposition may or may not be the same as the volume decomposition associated with the host physics. The parallel contact global search phase is then employed to find and distribute surface entities (nodes and faces) that are needed to compute contact constraints between entities owned by different MPI ranks without further inter-rank communication. Key steps of the contact global search include computing bounding boxes, building surface entity (node and face) search trees and finding and distributing entities required to complete on-rank (local) spatial searches. To enable source-code portability and performance across a variety of different computer architectures, we implemented the algorithm using the Kokkos hardware abstraction library. While we targeted development towards machines with a GPU accelerator per MPI rank, we also report performance results for OpenMP with a conventional multi-core compute node per rank. Results here demonstrate a 47 % decrease in the time spent within the global search algorithm, comparing the reference ACME algorithm with the GPU implementation, on an 18M face problem using four MPI ranks. As a result, while further work remains to maximize performance on the GPU, this result illustrates the potential of the proposed implementation.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2020

Microscale mechanical modeling of deformable geomaterials with dynamic contacts based on the numerical manifold method

Abstract Micromechanical modeling of geomaterials is challenging because of the complex geometry of discontinuities and potentially large number of deformable material bodies that contact each other dynamically. In this study, we have developed a numerical approach for micromechanical analysis of deformable geomaterials with dynamic contacts. In our approach, we detect contacts among multiple blocks with arbitrary shapes, enforce different contact constraints for three different contact states of separated, bonded, and sliding, and iterate within each time step to ensure convergence of contact states. With these features, we are able to simulate the dynamic contact evolution at the microscale for realistic geomaterials having arbitrary shapes of grains and interfaces. We demonstrate the capability with several examples, including a rough fracture with different geometric surface asperity characteristics, settling of clay aggregates, compaction of a loosely packed sand, and failure of an intact marble sample. With our model, we are able to accurately analyze (1) large displacements and/or deformation, (2) the process of high stress accumulated at contact areas, (3) the failure of a mineral cemented rock samples under high stress, and (4) post-failure fragmentation. The analysis highlights the importance of accurately capturing (1) the sequential evolution of geomaterials responding to stress as motion, deformation, and high stress; (2) large geometric features outside the norms (such as large asperities and sharp corners) as such features can dominate the micromechanical behavior; and (3) different mechanical behavior between loosely packed and tightly packed granular systems.

58 GEOSCIENCES↗

DOE OSTI2019

Influence of Wear Test Parameters on the Electrical Contact Performance of Brass Alloy/Copper Contactors Under Fretting Wear

Fretting of mated electronic connectors may be due to extreme increase in contact resistance. We present a detailed analysis of contact resistance by fretting experiments using brass alloys/copper contact pairs. The relationship between wear mechanisms and contact resistance was determined. The influence of fundamental factors such as normal load, displacement amplitude, and current on contact resistance change was also evaluated. It was found out that displacement amplitude, normal load, and current are important parameters for infinite lifetime or stable electrical resistance during fretting condition. Influence of displacement amplitude on the electrical contact performance might be affected by wear debris in the contact area. Electric contact performance could be improved by increasing the power current, which could break down the thick oxide film formed. The predicted working lifetime and reliability requirements of the connector were determined to optimize and extend the service life under the working condition.

36 MATERIALS SCIENCE↗

DOE OSTI2026

>24% screen printed Cu contacted n-TOPCon solar cells with successful implementation of LECO process

In this paper, we report the successful fabrication of >24.0 % efficiency n-TOPCon Si solar cells with screen-printed, fire-through Cu contact to n-TOPCon on the rear side and Ag contacted boron emitter on the front side by implementing optimized firing and LECO conditions. The highest efficiency (24.3%) Cu contacted n-TOPCon cell in this study showed excellent cell performance parameters with V oc >730 mV, J sc of 41.1 mA/cm 2 and FF of 80.8%, resulting in an absolute efficiency gap of 0.2% between Cu-contacted and fully Ag contacted n-TOPCon cells (24.5%). The mini-module fabricated with the Cu contacted n-TOPCon cell showed excellent reliability and durability of open-circuit voltage (V oc ), pseudo fill factor (pFF) and efficiency after prolonged damp-heat tests. Such high efficiency screen printed Cu contacted n-TOPCon cells provide unique opportunity to replace very expensive Ag contact on n-TOPCon with cheaper screen printable Cu metal pastes.

14 SOLAR ENERGY↗

DOE OSTI2016

Predicting a contact's sensitivity to initial conditions using metrics of frictional coupling

This paper presents a method for predicting how sensitive a frictional contact’s steady-state behavior is to its initial conditions. Previous research has proven that if a contact is uncoupled , i.e. if slip displacements do not influence the contact pressure distribution, then its steady-state response is independent of initial conditions, but if the contact is coupled, the steady-state response depends on initial conditions. In this paper, two metrics for quantifying coupling in discrete frictional systems are examined. These metrics suggest that coupling is dominated by material dissimilarity due to Dundurs’ composite material parameter β when β ≥ 0.2, but geometric mismatch becomes the dominant source of coupling for smaller values of β. Based on a large set of numerical simulations with different contact geometries, material combinations, and friction coefficients, a contact’s sensitivity to initial conditions is found to be correlated with the product of the coupling metric and the friction coefficient. For cyclic shear loading, this correlation is maintained for simulations with different contact geometries, material combinations, and friction coefficients. Furthermore, for cyclic bulk loading, the correlation is only maintained when the contact edge angle is held constant.

42 ENGINEERING↗

DOE OSTI2019

The effect of contact severity on micropitting: Simulation and experiments

In this work, a numerical contact fatigue model combining the effects of rolling contact fatigue and wear has been developed based on mixed elastohydrodynamic lubrication (EHL) theory, continuum damage mechanics (CDM) and the Archard's wear law. A series of benchtop tests were conducted using a triple-contact test rig to study the influence of surface roughness, speed and load on micropitting. The proposed surface damage model was used to simulate the rolling-sliding line contact of surfaces having different surface topography. The film thickness, contact pressure and sub-surface stress were determined by solving the generalized Reynolds equation and using the well-developed discrete convolute and fast Fourier transformation (DC-FFT) method. The jump-in-cycle was assumed to evaluate the accumulated damage based on the tested fatigue life and sub-surface stress histories. Surface topography was updated by calculating the wear height with the Archard's wear equation. Results reveal that micropitting occurs under the combined effect of wear and contact fatigue. The micropitting rate increased then turn to decreased as the lambda ratio (lambda) increased. The contact pressure significantly affected the contact fatigue life and the micropitting rate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2017

Seamless Staircase Electrical Contact to Semiconducting Graphene Nanoribbons

Electrical contact to low-dimensional (low-D) materials is a key to their electronic applications. Traditional metal contacts to low-D semiconductors typically create gap states that can pin the Fermi level (E F ). Yet, low-D metals possessing a limited density of states at E F can enable gate-tunable work functions and contact barriers. Furthermore, a seamless contact with native bonds at the interface, without localized interfacial states, can serve as an optimal electrode. To realize such a seamless contact, one needs to develop atomically precise heterojunctions from the atom up. In this work, we demonstrate an all-carbon staircase contact to ultranarrow armchair graphene nanoribbons (aGNRs). The coherent heterostructures of width-variable aGNRs, consisting of 7, 14, 21, and up to 56 carbon atoms across the width, are synthesized by a surface-assisted self-assembly process with a single molecular precursor. The aGNRs exhibit characteristic vibrational modes in Raman spectroscopy. A combined scanning tunneling microscopy and density functional theory study reveals the native covalent-bond nature and quasi-metallic contact characteristics of the interfaces. Our electronic measurements of such seamless GNR staircase constitute a promising first step toward making low resistance contacts.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2020

Sputtered p-Type Cu x Zn 1– x S Back Contact to CdTe Solar Cells

As thin-film cadmium telluride (CdTe) solar cells gain prominence, one particular challenge is optimizing contacts and their interfaces to transfer charge without losses in efficiency. Back contact recombination is still significant and will prevent CdTe solar technology from reaching its full potential in device efficiency, and transparent back contacts have not been developed for bifacial solar technology or multijunction solar cells. To address these challenges, here we investigate sputtered Cu x Zn 1– x S as a p-type semi-transparent back contact material to thin-film polycrystalline CdTe solar cells at Cu concentrations x = 0.30, 0.45, and 0.60. This material is selected for its high hole conductivity (160–2120 S cm –1 ), wide optical band gap (2.25–2.75 eV), and variable ionization potential (approximately 6–7 eV) that can be aligned to that of CdTe. We report that without device optimization, CdTe solar cells with these Cu x Zn 1– x S back contacts perform as well as control cells with standard ZnTe:Cu back contacts. We observe no reduction in external quantum efficiency, low contact barrier heights of approximately 0.3 eV, and carrier lifetimes on par with those of baseline CdTe. These cells are relatively stable over one year in air, with V OC and efficiency of the x = 0.30 cell decreasing by only 1 and 3%, respectively. Using scanning electron microscopy and scanning transmission electron microscopy to investigate the Cu x Zn 1– x S/CdTe interface, we demonstrate that the Cu x Zn 1– x S layer segregates into a bilayer of Cu-Te-S and Zn-Cd-S, and thermodynamic reaction calculations support these findings. Despite its bilayer formation, the back contact still functions well. This investigation explains some of the physical mechanisms governing the device stack, inspires future work to understand interfacial chemistry and charge transfer, and elicits optimization to achieve higher-efficiency CdTe cells.

14 SOLAR ENERGY↗