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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Dual ohmic contact to N- and P-type silicon carbide

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Okojie, Robert S.↗
NASA NTRS2009

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

plasma-enhanced chemical vapor deposition (PECVD).↗
NASA NTRS2019

Advanced Modular Power System Electronics Enclosure Thermal Testing

An analysis was set up to model the temperature of the advanced modular power system (AMPS) power distribution cards when installed within the electronics enclosure case. The analysis was used to determine the steady-state temperature distribution of the cards within the case. To verify the analysis, an experiment was set up and conducted to simulate the operation of the cards within the enclosure. Four tests were conducted. The tests varied the position of the cold plate and evaluated the use of a thermal compound to reduce the contact resistance between the joints within the thermal path between the cards and the cold plate. Three of the four cases examined showed very good agreement between the analysis and the experiment with a less than 1-percent variation in the predicated temperatures determined through the analysis and the experimentally derived temperatures. In the remaining case, the difference between the analysis and experiment was approximately 12 percent. Both the experiment and analysis showed that the modular power conditioning cards can be maintained within their desired maximum operating temperature range of 40 to 45 °C through thermal conduction to a cold plate when operating with their estimated maximum heat output of 16 W per card.

Colozza, Anthony J.↗
NASA NTRS2005

Performance test results of a skutterudite-based unicouple with a metallic coating

A performance test of a Skutterudite-based unicouple (MAY-04) with a metallic coating to suppress the sublimation of antimony from the legs near the hot junction is performed in vacuum (~ 9 x10-7 torr) for ~ 2,000 hours at hot and cold junction temperatures of 892.1 + 11.9 K and 316.1 + 5.5 K, respectively. The p-leg is made of CeFe3.5Co0.5Sb12 and the n-leg is made of CoSb3. Presented are the measured voltage-current characteristics, electrical power, open-circuit voltage, and Seebeck coefficients of the legs as functions of cumulative test time. Also presented is the estimate of the conversion efficiency, shortly (~ 96 hrs) after the start of test. To demonstrate the effectiveness of the metallic coating, the measurements for MAY-04 are compared with those of two uncoated unicouples of the same leg materials (MAR-03 and JUN-03), which had been tested earlier. The cross-sectional areas of the legs in MAY-04 are larger than those in MAR-03 and JUN-03, tested in argon cover gas at ~ 0.051-0.068 MPa for 450 and 1200 hours, respectively. The open circuit voltage, Voc (204 mV) of MAY-04 at Beginning-Of-Test (BOT) is almost the same as that of MAR-03, but higher than that of JUN-03 (~180 mV). Although the argon gas effectively decreased antimony loss from legs of MAR-03 and JUN-03, marked degradations in performance occurred with time in these tests. Conversely, the metallic coating in MAY-04 effectively reduced the performance degradation with cumulative test time. The estimated peak efficiency of MAY-04, shortly after BOT (10.65%) is only ~ 0.37 percentage point lower than the theoretical value, assuming zero side heat losses and zero contact resistance per leg. The peak power of MAY- 04 decreased by only ~12%, from its BOT value of ~1.6 We to ~ 1.4 We after ~ 2,000 of cumulative testing

Caillat, Thierry↗
NASA NTRS1989

Chain Of Test Contacts For Integrated Circuits

Test structure forms chain of "cross" contacts fabricated together with large-scale integrated circuits. If necessary, number of such chains incorporated at suitable locations in integrated-circuit wafer for determination of fabrication yield of contacts. In new structure, resistances of individual contacts determined: In addition to making it possible to identify local defects, enables generation of statistical distributions of contact resistances for prediction of "parametric" contact yield of fabrication process.

Lieneweg, Udo↗
NASA NTRS1972

Humidity resistant solar cell contacts

Gold-platinum solar cell contact is developed which does not exhibit chemical reactivity of titanium or porosity of silver. This contact offers excellent ohmic characteristics and stability in humid air.

Bishop, C. J.↗
NASA NTRS1987

New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

Lieneweg, Udo↗
NASA NTRS1990

The effect of electron irradiation on YBa2Cu3O(x) with gold bead contacts

The effect of 1-MeV electron irradiation, up to a total dose of 5.7 x 10 to the 17th electrons/sq cm at room temperature on YBa2Cu3O(x) was investigated using gold bead contacts made by the melting technique. The superconducting transition temperature Tc, the critical current density Jc at 77 K, the normal-state resistivity, and the contact resistance for gold bead contacts were measured as a function of fluence on the same samples without disturbing the contacts. Tc remained constant at 91 K, and Jc at 77 K remained constant around 90 A/sq cm. The normal-state resistivity increased systematically by about 15 percent for the total dose. Finally, the surface contact resistance at 77 K remained less than 4.2 microohm sq cm throughout the radiations. These studies took place over an 8-month period, and subsequent measurements indicate that the results are definitely due to radiation effects and not aging effects. It is concluded that the superconductor YBa2Cu3O(x) with gold bead contacts would perform well in a space environment of electron irradiation.

Caton, R.↗
NASA NTRS2012

NARloy-Z-Carbon Nanotube Composites

Motivation: (1) NARloy-Z (Cu-3%Ag-0.5%Zr) is the state of the art, high thermal conductivity structural alloy used for making liquid rocket engine main combustion chamber liner. It has a Thermal conductivity approx 80% of pure copper. (2) Improving the thermal conductivity of NARloy-Z will help to improve the heat transfer efficiency of combustion chamber. (3)Will also help to reduce the propulsion system mass and increase performance. It will also increases thrust to weight ratio. (4) Improving heat transfer helps to design and build better thermal management systems for nuclear propulsion and other applications. Can Carbon nanotubes (CNT) help to improve the thermal conductivity (TC)of NARloy-Z? (1)CNT's have TC of approx 20X that of copper (2) 5vol% CNT could potentially double the TC of NARloy-Z if properly aligned (3) Improvement will be less if CNT s are randomly distributed, provided there is a good thermal bond between CNT and matrix. Prior research has shown poor results (1) No TC improvement in the copper-CNT composite reported (2)Reported values are typically lower (3) Attributed to high contact thermal resistance between CNT and Cu matrix (4)Results suggest that a bonding material between CNT and copper matrix is required to lower the contact thermal resistance It is hypothesized that Zr in NARloy-Z could act as a bonding agent to lower the contact thermal resistance between CNT and matrix.

Bhat, Biliyar N.↗
NASA NTRS1985

Eutectic Contact Inks for Solar Cells

Low-resistance electrical contacts formed on solar cells by melting powders of eutectic composition of semiconductor and dopant. Process improves cell performance without subjecting cell to processing temperatures high enough to degrade other characteristics.

Ross, B.↗
NASA NTRS2001

Study of Electrical Contacts and Devices in Advanced Semiconductors

Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Hall, H. P.↗
NASA NTRS1967

Thin film process forms effective electrical contacts on semiconductor crystals

Process makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are made. Sputtering alternating layers of tantalum and gold forms the alloy film.

Formigoni, N. P.↗
NASA NTRS1967

Spreading resistance as a function of frequency.

Field equations for spreading resistance of variable capacitance diode and point contact variable resistance diode derived in terms of frequency, material characteristics and physical parameters

PARAMETRIC DIODE↗
NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗
NASA NTRS1995

Resistance to Rolling in the Adhesive Contact of Two Elastic Spheres

For the stability of agglomerates of micron sized particles it is of considerable importance to study the effects of tangential forces on the contact of two particles. If the particles can slide or roll easily over each other, fractal structures of these agglomerates will not be stable. We use the description of contact forces by Johnson, Kendall and Roberts, along with arguments based on the atomic structure of the surfaces in contact, in order to calculate the resistance to rolling in such a contact. It is shown that the contact reacts elastically to torque forces up to a critical bending angle. Beyond that, irreversible rolling occurs. In the elastic regime, the moment opposing the attempt to roll is proportional to the bending angle and to the pull-off force P(sub c). Young's modulus of the involved materials has hardly any influence on the results. We show that agglomerates of sub-micron sized particles will in general be quite rigid and even long chains of particles cannot be bent easily. For very small particles, the contact will rather break than allow for rolling. We further discuss dynamic properties such as the possibility of vibrations in this degree of freedom and the typical amount of rolling during a collision of two particles.

Dominik, C.↗
NASA NTRS1995

Resistance to Rolling in the Adhesive Contact of Two Elastic Spheres

For the stability of agglomerates of micron sized particles it is of considerable importance to study the effects of tangential forces on the contact of two particles. If the particles can slide or roll easily over each other, fractal structures of these agglomerates will not be stable. We use the description of contact forces by Johnson, Kendall and Roberts, along with arguments based on the atomic structure of the surfaces in contact, in order to calculate the resistance to rolling in such a contact. It is shown that the contact reacts elastically to torque forces up to a critical bending angle. Beyond that, irreversible rolling occurs. In the elastic regime, the moment opposing the attempt to roll is proportional to the bending angle and to the pull-off force P(sub c). Young's modulus of the involved materials has hardly any influence on the results. We show that agglomerates of sub-micron sized particles will in general be quite rigid and even long chains of particles cannot be bent easily. For very small particles, the contact will rather break than allow for rolling. We further discuss dynamic properties such as the possibility of vibrations in this degree of freedom and the typical amount of rolling during a collision of two particles.

Dominik, C.↗