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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Three-Phase LCC-LCC Compensated 50-kW Wireless Charging System with Non-Zero Interphase Coupling

In this paper, an LCC-LCC compensated 50 kW 3phase (3φ) wireless charging system with nonzero interphase mutual inductance is demonstrated. The 3φ-LCC compensation is designed considering a nonzero mutual-inductance among the phase-coils to meet resonance criteria, balance voltages and currents of the resonant tank components, achieve desired voltage gain, and ensure the zero-voltage switching (ZVS) operation. An experimental prototype of the 3φ-LCC-LCC compensation circuit is built for a 50 kW bipolar coil-based 3φ wireless charging system. The prototype system was tested at rated 50 kW power for evaluating the efficiency, ZVS operation, electric and magnetic field emissions, and thermal characteristics. The experimental results show 94.3% dc-to-dc efficiency and only 4.4 μT rms magnetic field emission at the rated 50 kW output power.

Mohammad, Mostak↗
DOE OSTI2021

Analysis of Magnetic Field Emissions and Shield Requirements for Interoperating High-Power EV Wireless Charging System

In this study, the magnetic field emission (MFE) is investigated for matching (identical primary and secondary couplers) and interoperating (different couplers) 11 kW wireless charging systems (WCS). The interoperating charging pads generate higher MFE than the matching charging-pads; hence, using interoperable couplers requires a more effective shielding. In this work, different shield topologies are investigated to suppress the MFE for interoperable conditions. Four 11 kW WCSs with the unipolar (uni) and bipolar (bi) transmitter (Tx) and receiver (Rx) pads has been investigated: 1) uniTx with uniRx, 2) uniTx with biRx, 3) biTx with uniRx, and 4) biTx with bi-Rx. The studied systems are designed for 11 kW WPT3 level with Z2 airgap class (140-150 mm) resembling the standard SAE-J2954. The WCSs are simulated in finite element analysis (FEA) and validated experimentally using a 11 kW biTx-biRx system. The experimental results match with the simulation results with <5% error. The FEA results show that a biTx needs a magnetic shield, and a uniTx needs an aluminum shield to meet the MFE under all interoperability and alignment conditions.

Mohammad, Mostak↗
DOE OSTI2022

A Current Limiting Control Strategy for Single-Loop Droop-Controlled Grid-Forming Inverters Under Balanced and Unbalanced Faults

Existing studies reporting current limiting control strategies for grid-forming inverters primarily focus on grid-forming inverters that use a multi-loop control structure. This study reports a current limiting control for grid-forming inverters that uses a single-loop control structure. The proposed current limiting control was implemented at the pulse width modulation (PWM) control layer to guarantee a rapid response. Once an overcurrent caused by severe faults is detected, the proposed control strategy immediately blocks relevant insulated-gate bipolar transistors (IGBTs) using a hysteresis loop, ensuring that the overcurrent is limited within a few PWM cycles. After the fault is cleared, the inverter seamlessly transfers back to droop control mode to maintain stability. The current limiting control has been tested in a microgrid environment operating in the OPAL-RT platform. Study results show that the control strategy can effectively limit the overcurrent under both balanced and unbalanced faults and can maintain system transient stability after the fault is cleared.

Du, Wei↗
DOE OSTI2022

Optimizing Sensor Count and Placement to Detect Bond Wire Lift-Offs and Surface Defects in High-Power IGBT Modules Using Low-Cost Piezo-Electric Resonators

This manuscript presents the most recent results and findings to identify bond wire lift-offs and surface defects in high-power isolated gate bipolar junction transistor (IGBT) modules. The authors of this manuscript formerly proposed a low-cost, piezoelectric resonator-based measurement unit to detect bond wire related degradation in larger IGBT modules. Since high-power IGBT modules are expensive, it was apparent that evaluating our proposed method by inducing controlled damage to fresh (new) IGBTs may not be cost-effective especially when multiple sets of data need to be captured by inducing damage to different levels. In order to overcome this limitation, IGBT bond wires have been mimicked using a 3D printed enclosure, a PCB, and copper wires with dimensions very closely resembling a real IGBT. Using this method, multiple test devices can be built at the cost of a real IGBT, and the proposed technique could be fine-tuned without damaging expensive, real IGBTs. Our recent findings can be used to determine real IGBT degradation and bond wire lift-offs using only two sensors, as opposed to six transducers used in the first iteration of the setup. In addition to optimizing the sensor count, we have also identified the best possible locations of these sensors by attempting multiple placements inside the IGBT casing.

condition monitoring↗
DOE OSTI2022

A 100-kW Wireless Power Transfer System Development Using Polyphase Electromagnetic Couplers

Wireless power transfer (WPT) is an essential technology enabling automated charging of electric vehicles with safety, convenience, and flexibility while having high efficiencies. High-power wireless charging systems will be one of the dominating charging technologies for electric vehicles (EVs) in an effort to eliminate range anxiety and reduce charging times similar to that of gas station refueling practice. Polyphase electromagnetic coupler with rotating fields is a new bipolar wireless charging pad technology that can significantly increase the surface power density (kW/m2) of wireless charging coils. This study proposes a 100-kW wireless power transfer system with a compact vehicle-side (receiver) coupler that reaches to about 0.905 MW/m2 surface power density with a transmitter rated for up to 300 kW with 0.68 MW/m2. High-frequency power electronics including the inverter and rectifier designs are included in this digest along with the hardware prototype developments and preliminary experimental results.

Onar, Omer↗
DOE OSTI2021

Performance of III–V Solar Cells Grown on Reformed Mesoporous Ge Templates

We demonstrate a solar cell on reformed porous Ge with an efficiency of 7.7%. We generate mesopores in (100) Ge by bipolar electrochemical etching and anneal them at high temperature. The pores coalesce deep in the structure rather than at the surface as desired, although resulting in coarse superficial morphology unsuitable for device growth. To combat this issue, we developed a surface treatment involving an HBr dip, annealing at 415 degrees C, and a postannealing ultrasonic De-ionized water dip to improve the surface structure, resulting in a smoother reformed surface on which we grow a GaInAs solar cell. The structure retains embedded pores after growth and the transitions between Ge and III-V layers are distinct. The solar cell fabricated using the improved coalescence has an efficiency of 4.5%. The efficiency improves to 7.7% by isolating the rest of the device from three limiting localized shunt areas. Protruding defects in the porous Ge and III-V layers still limit the performance, but this work establishes a step toward the technical viability of this exfoliation approach, showing decent efficiency if protruding defects can be removed or reduced.

14 SOLAR ENERGY↗
DOE OSTI2024

Miniaturized Magnetoelastic Sensor System

This article describes the design, assembly, and implementation of a hand-held, magnetic-field-based sensor system that can be adapted for a variety of sensing applications. The miniaturized system is based on Chemical Identification by Magneto-Elastic Sensing (ChIMES) technology, which uses three concentric solenoid coils to wirelessly interrogate a sensor body comprised of a response material coupled to a magnetoelastic wire. The response material expands when it encounters a target, imposing mechanical stress on the wire and altering its magnetic permeability. The sensor bodies are passive, requiring no external power source, and they are small, measuring about 15 mm in length and 3.0 mm in diameter. Up to four sensor bodies can be configured as an evenly-spaced linear array. The sensor system operates by applying a low-frequency, current-stabilized, filtered triangle wave to a uniform-density excitation coil to switch the magnetic domains within the wire. Further, the responses from the sensors are picked up by a detection coil as stress-induced changes in the Faraday voltage, and the strong magnetic field induced by the excitation coil in the detection coil is nullified by a cancellation coil reverse-wound in series with the detection coil. The responses of the sensors in an array are separated in time by a linear gradient dc biasing coil. The sensors can be interrogated through metallic and nonmetallic barriers. The signals from the detection coil and the excitation coil are digitized by a pair of bipolar analog-to-digital converters (ADCs). A Raspberry Pi single-board computer (SBC) and associated software perform data acquisition and control all aspects of the sensor system hardware. The program allows the user to select the number of sensors in the array, the type of signal that is being collected, and the number of samples to take. The program also allows for signal processing of the sensor data, such as baseline correction. The program can differentiate sensor peaks from each other and calculate the magnitude of each sensor response with less than 1% error. The data are then displayed along with a graph of the signal.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Design of 3He Solenoid Power Supply at BNL

The design of the 3He solenoid power supply at Brookhaven National Laboratory (BNL) has been completed and construction is underway. The power supply is an upgrade of the existing Electron Beam Ion Source (EBIS) solenoid power supply and thus can be used as an operational spare. It is also capable of driving a solenoid magnet that rotates the 3He spin direction. The design is based on the original EBIS solenoid power supply, incorporating bipolar output and short circuit protection features to address the expanded requirements for spin rotation. The output current is a half sine wave of 13ms duration at the repetition rate of 5Hz, with the amplitude of 1900A. This paper will discuss the design and construction status of the 3He solenoid power supply.

Tan, Yugang↗
DOE OSTI2023

Ramp Generator for Electron Scanner in SNS Beam Profile Measurements System

A new fast high voltage Ramp Generator to deflect an electron beam in the Electron Scanner is required at the Spallation Neutron Source (SNS) in the Oak Ridge National Laboratory. The Electron Scanner is used for non-destructively measuring the transverse profiles of the proton beam in the accumulator ring of the SNS [1]. The existing deflector is obsolete and needs to be replaced. A new Ramp Generator is proposed based on fast high voltage MOSFET power switches. Two configurations have been considered. One is bipolar, with two opposite polarity power supplies and one switch module or two single switches, and the other is unipolar, with one power supply and two switch modules. Schematics and performance of both options are described, and results of the prototype testing are presented in the paper.

Peplov, Vladimir↗
DOE OSTI2020

A Simple Physical Model for Three-Terminal Tandem Cell Operation

We present a simple physical model that explains the device operation of a three-terminal (3T) IBC Si bottom cell platform that enables an efficient 3T tandem. If the IBC cell has two p-n junctions and one high-low junction (bipolar transistor), the two p-n junctions strongly interact via minority carrier diffusion in the base. In a two-BSF junction and one p-n junction IBC platform (single emitter), the BSF terminals interact via ohmic majority carrier current in the base. This interaction creates wide 'generating' power islands in the 2D current J 1 J 2 plane. The area and shape of these islands are determined by dissipative losses in the wafer base and in the cell contacts. Both positive and negative terminal currents are allowed for 3T operation, thus enabling both the top and bottom cells to operate at their full light currents. This opens new possibilities for 3T use in modules.

14 SOLAR ENERGY↗
DOE OSTI2020

Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells

Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescence deep in the structure rather than at the surface. III-V epitaxy on annealed porous Ge with subsurface coalescence and coral-like structures on the surface produced shunted photovoltaic devices. The roughness of the annealed porous Ge film was reduced by a pre-annealing HBr treatment and a post-annealing ultrasonic DI water dip. A smoother reformed surface was obtained, on which a GaInAs upright device with an efficiency of 5.7% was grown, demonstrating a first step towards technical viability.

14 SOLAR ENERGY↗
DOE OSTI2025

Amorphous Indium Oxide Channel FEFETs With Write Voltage of 0.9 V and Endurance >10 12 for Refresh-Free Embedded Memory

This work presents, for the first time, a back-end-of-the-line (BEOL)-compatible W-doped indium oxide (IWO) ferroelectric field-effect transistor (FEFET) with a record-low operating voltage below 0.9 V and a write speed of 20 ns while achieving a transient read current window (CW) ratio ( I LVT /I HVT ) greater than 10 4 . The device also exhibits exceptional reliability characteristics such as: 1) measured bipolar write endurance up to 10 12 cycles; 2) a fast read speed of 50 ns; 3) read endurance surpassing 10 12 cycles; and 4) retention exceeding 10 4 s at 85 ∘ C. Furthermore, a physics-based numerical model has been developed to investigate the nanoscale characteristics of BEOL FEFET devices, leveraging nucleation-limited switching in HfO 2 ferroelectrics and dc characterization to extract material and channel parameters for accurate device simulation. The simulation uncovers the stochastic switching behavior of BEOL amorphous oxide semiconductor (AOS) FEFETs and demonstrates an intrinsic switching time as low as 1 ps, highlighting the potential of BEOL AOS FEFETs for ultrafast memory applications. These results establish AOS FEFETs as a compelling candidate for high-density embedded memory applications for last-level cache (LLC) (L4) in advanced CMOS technology nodes.

1-V ferroelectric field-effect transistor (FEFET)↗
DOE OSTI2020

Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications. SiC mosfet modules exhibit narrow SC withstand times and generally much lower SC robustness than silicon (Si) insulated-gate bipolar transistors (IGBTs). This puts a critical concern on their utilization, further stressing the importance of reliable protection. This article presents a comprehensive analysis and discussion on the SiC mosfet module SC protection and performance comparison between conventional desaturation detection, previously used for Si IGBT protection, and Rogowski switch-current sensor (RSCS) detection. In addition, this article presents the experimental design for soft turn-off as a reaction to the SC detection to avoid excessive overshoots during the abrupt turn-off of the SC current. To perform different types of SC with various fault inductances on different temperatures, and for the sake of fair comparison under the same conditions, a gate-driver unit for 1.2 kV SiC mosfet half-bridge modules is developed containing both detection methods. The results demonstrate that both methods are successful in protecting the module in all SC types, with superiority of the RSCS detection and concerns for desaturation detection in high-inductance and high dc-bus voltage SC events.

42 ENGINEERING↗
DOE OSTI2025

A Two-Stage Current Limiting Control Strategy for Direct-Droop-Controlled Grid-Forming Inverters

This paper presents a two-stage current limiting control strategy with fault ride-through capability for the direct-droop-controlled grid-forming (GFM) inverters. The proposed approach comprises Stage 1 and Stage 2 current limiting controls. During faults, Stage 1 current limiting control instantly clamps the inverter output current magnitude to its maximum transient limit by blocking the switching pulses to the insulated-gate bipolar transistors (IGBTs) with the help of a hysteresis loop control, and Stage 2 current limiting control limits the inverter output current magnitude to its steady-state limit by regulating the amplitude and frequency of the modulating waveform utilizing the active and reactive current limiting control loops. By implementing the current limiting actions in two stages, this approach can effectively limit the over-current within a few cycles after the fault occurrence and ensure synchronism to the grid after long-term fault events. The efficacy of the proposed control approach is validated through electromagnetic transient (EMT) simulation results conducted on a single GFM inverter-based test system and the IEEE 39-bus test system with multiple GFM inverters in the PSCAD platform.

Mohiuddin, Sheik Mohammad↗
DOE OSTI2026

Versatile High-Gain Low-Noise Readout ASIC for Silicon Microstrip Tracking Detectors

This work presents Turpial, a custom-designed low- power front-end readout ASIC for microstrip silicon sensors. Implemented in 130 nm CMOS technology, the chip integrates 64 identical readout channels, each including a configurable charge-sensitive amplifier, a bipolar pulse shaper, a 32-sample 50 Msps analog memory, and a 12-bit RC-hybrid SAR ADC operating at 1 Msps. To satisfy the target power budget of 5 mW per channel, the architecture employs a time-decoupled readout scheme in which fast transient signals are first captured in the analog memory and subsequently digitized at a lower rate. Turpial supports a wide dynamic range from 1 kℎ+ to 1 Mℎ+ while maintaining low noise performance, targeting an equivalent noise charge (ENC) below 200 𝑒−including the sensor, and providing a maximum gain of 1500 mV/fC. A digital block manages slow control, data acquisition, and data serialization through dual CML 300 Mb/s serializers. In addition, an on-chip reference circuit, based on a sub-1 V bandgap reference and an integrated LDO regulator, eliminates the need for external reference circuitry. Experimental results demonstrate that both the individual building blocks and the fully integrated ASIC meet the design specifications.

Hernandez, Hugo [Stanford University] (ORCID:00000↗
DOE OSTI2021

Design and Optimization of a 200-kW Medium-Frequency Transformer for Medium-Voltage SiC PV Inverters

This paper presents a design and optimization methodology for a 200-kW medium-frequency transformer (MFT) based on low-loss magnetic core (FINEMET FT-3TL). The proposed optimal design methodology consists of predesign, preliminary design, and optimal design. In the preliminary design, the parallel-concentric winding structure is selected to increase the current carrying capability and reduce the leakage inductance. Based on the parallel-concentric winding concept, a novel cooing and insulation structure with 3-D printed bobbins are proposed. The optimal designed MFT prototype achieves a power density higher than 19.23 kW/L. The electrical insulation system is tested at 12 kV ac peak voltage. In addition, the partial discharge (PD) test is conducted at 7.5 kV ac peak voltage to ensure the PD-free design. The high-frequency bipolar pulsewidth modulation voltage insulation (PD) test is the first time applied in MFT design and test process. Finally, the transformer is applied in a dual-active-bridge (DAB) converter with 200 kW rated power. The peak efficiency of the DAB converter is 99.53%, and the efficiency at 200 kW is 98.85%. The peak efficiency of MFT is 99.844%, and the efficiency at 200 kW is 99.842%.

42 ENGINEERING↗
DOE OSTI2020

Electrical power generation from moderate-temperature radiative thermal sources

Moderate-temperature thermal sources (100° to 400°C) which radiate waste heat are often the by-product of mechanical work, chemical or nuclear reactions, or information processing. We demonstrate conversion of thermal radiation into electrical power using a bipolar grating-coupled complementary metal-oxide-silicon (CMOS) tunnel diode. A two-step photon-assisted tunneling charge pumping mechanism results in separation of charge carriers in pn-junction wells leading to a large open-circuit voltage developed across a load. Electrical power generation from a broadband blackbody thermal source has been experimentally demonstrated with converted power densities of 27 to 61 microwatts per square centimeter for thermal sources between 250° and 400°C. Scalable, efficient conversion of radiated waste heat into electrical power can be used to reduce energy consumption or to power electronics and sensors.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Spectral kernel machines with electrically tunable photodetectors

Spectral machine vision collects spectral and spatial information as three-dimensional hypercubes and digitally processes them, which causes a data bottleneck, limiting power efficiency, frame rate, and spectral-spatial resolution. This work introduces spectral kernel machines (SKMs) to overcome these bottlenecks. SKM directly compresses spectral analysis through the output photocurrent and learns from example objects to identify and classify new samples in a "sniff-and-seek" mode. We experimentally demonstrated SKMs with electrically tunable bipolar black phosphorus-molybdenum disulfide (bP-MoS2) photodiodes in the near- and mid-infrared band and silicon photoconductors in the visible band, performing versatile intelligent tasks from chemometrics to semiconductor metrology. This architecture consumed substantially less power and was more than an order of magnitude faster than existing solutions for hyperspectral image analysis, defining an intelligent imaging and sensing paradigm with intriguing possibilities.

Zhang, Dehui↗