Ohmic contacts to solution-grown gallium arsenide
Carrier concentration profiles and surface resistance of Ohmic contacts to solution epitaxial n-type GaAs wafers measured by Schottky barrier capacitance
Day, G. F.↗
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Anisotropy in the conductivity of n-gallium arsenide
N type GaAs doped with Si, conductivity anisotropy observed from measurement and explanation in terms of electron distribution
Gaylord, T. K.↗
Electrical characteristics of gallium arsenide 'real' surfaces
GaAs single crystals real surface electrical characteristics, using pulsed field effect techniques
Gatos, H. C.↗
Epitaxial gallium arsenide wafers
The preparation of GaAs epitaxial layers by a vapor transport process using AsCl3, Ga and H2 was pursued to provide epitaxial wafers suitable for the fabrication of transferred electron oscillators and amplifiers operating in the subcritical region. Both n-n(+) structures, and n(++)-n-n(+) sandwich structures were grown using n(+) (Si-doped) GaAs substrates. Process variables such as the input AsCl3 concentration, gallium temperature, and substrate temperature and temperature gradient and their effects on properties are presented and discussed.
Black, J. F.↗
Development of ion implanted gallium arsenide transistors
Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.
Hunsperger, R.↗
Photodetachment of electrons from amide and arsenide ions - The electron affinities of NH2., and AsH2.
The relative cross section for the gas-phase photodetachment of electrons has been determined for NH2(-) in the wavelength region of 1195 to 1695 nm and for AsH2(-) in the region from 620 to 1010 nm. An ion cyclotron resonance spectrometer was used to generate, trap, and detect negative ions. A 1000-W xenon arc lamp with a grating monochromator was used as the light source, except for one series of experiments in which a tunable laser was employed. Single sharp thresholds were observed in both cross sections, and the following electron affinity values were determined: 0.744 (plus or minus 0.022) eV for NH2. and 1.27 (plus or minus 0.03) eV for AsH2.
Smyth, K. C.↗
A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide
In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.
Lin, A. H.↗
Experimental observation of Wannier levels in semi-insulating gallium arsenide.
Optical absorption in an electric field has been of increased interest in recent years since Callaway predicted that the Wannier levels may be observable in direct-transition semiconductors such as GaAs. In this work, such levels have been observed for the first time and found to be in substantial agreement with the Callaway theory.
Koss, R. W.↗
Refractive index of n-type gallium arsenide.
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Zoroofchi, J.↗
Feasibility investigation of growing gallium arsenide single crystals in ribbon form
Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3 encapsulated feed stock, confined by a quartz cover plate. By controlling the heat flow in the graphite boat and controlling the zoning rate, large grained, single phase polycrystalline samples with directional solidification and good thickness control were achieved. Arsenic vaporization was effectively suppressed at the melting point of GaAs by the B2O3 moat and 3 atmospheres of pressure. A vertical constrained-zone-melting apparatus with a B2O3 moat seal, rf heating, and water cooling on the bottom will be used to control the heat flow and temperature patterns required for growth of single crystal ribbons.
Richardson, D. L.↗
Third Working Meeting on Gallium Arsenide Solar Cells
Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.
Walker, G. H.↗
A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide
The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.
Kuhlman, G. J.↗
Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained
The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.
Gourrier, S.↗
Gallium arsenide (GaAs) solar cell modeling studies
Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.
Heinbockel, J. H.↗
Reliability study of refractory gate gallium arsenide MESFETS
Refractory gate MESFET's were fabricated as an alternative to aluminum gate devices, which have been found to be unreliable as RF power amplifiers. In order to determine the reliability of the new structures, statistics of failure and information about mechanisms of failure in refractory gate MESFET's are given. Test transistors were stressed under conditions of high temperature and forward gate current to enhance failure. Results of work at 150 C and 275 C are reported.
Yin, J. C. W.↗
Gallium arsenide (GaAs) power conversion concept
A summary design analysis of a GaAs power conversion system for the solar power satellite (SPS) is presented. Eight different satellite configuration options for the solar arrays are compared. Solar cell annealing effects after proton irradiation are considered. Mass estimates for the SPS and the effect of solar cell parameters on SPS array design are discussed.
Nussberger, A. A.↗
An enhanced sensitivity null ellipsometry technique for studying films on substrates - Application to silicon nitride on gallium arsenide
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Alterovitz, S. A.↗
Research on gallium arsenide diffused junction solar cells
The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.
Borrego, J. M.↗