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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Further study of inversion layer MOS solar cells

A group of inversion layer MOS solar cells has been fabricated. The highest value of open-circuit voltage obtained for the cells is 0.568V. One of the cells has produced a short-circuit current of 79.6 mA and an open-circuit voltage of 0.54V. It is estimated that the actual area AMO efficiency of this cell is 6.6 percent with an assumed value of 0.75 for its fill factor. Efforts made for fabricating an IL/MOS cell with reasonable efficiencies are reported. Future work for 4 sq cm IL cells and 25 sq cm IL cells is discussed.

Ho, Fat Duen↗
NASA NTRS1988

Progress in InP solar cell research

Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.

Weinberg, Irving↗
NASA NTRS1988

High-resolution imaging of solar system objects

The strategy of this investigation has been to develop new high-resolution imaging capabilities and to apply them to extended observing programs. These programs have included Io's neutral sodium cloud and comets. The Io observing program was carried out at Table Mountain Observatory (1976 to 1981), providing a framework interpreting Voyager measurements of the Io torus, and serving as an important reference for studying asymmetries and time variabilities in the Jovian magnetosphere. Comet observations made with the 3.6 m Canada-France-Hawaii Telescope and 1.6 m AMOS telescope (1984 to 1987) provide basis for studying early coma development in Halley, the kinematics of its nucleus, and the internal and external structure of the nucleus. Images of GZ from the ICE encounter period form the basis for unique comparisons with in situ magnetic field and dust impact measurements to determine the ion tail and dust coma structure, respectively.

Goldberg, Bruce A.↗
NASA NTRS1989

Indium phosphide solar cell research in the US: Comparison with nonphotovoltaic sources

Highlights of the InP solar cell research program are presented. Homojunction cells with AMO efficiences approaching 19 percent were demonstrated while 17 percent was achieved for indium tin oxide (ITO)/InP cells. The superior radiation resistance of these latter two cell configurations over both Si and GaAs were demonstrated. InP cells on board the LIPS III satellite show no degradation after more than a year in orbit. Computer modeling calculations were directed toward radiation damage predictions and the specification of concentrator cell parameters. Computed array specific powers, for a specific orbit, are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

Weinberg, I.↗
NASA NTRS1988

Progress in InP solar cell research

Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/P homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.

Weinberg, I.↗
NASA NTRS1990

Estimation of minority carrier diffusion lengths in InP/GaAs solar cells

Minority carrier diffusion length is one of the most important parameters affecting the solar cell performance. An attempt is made to estimate the minority carrier diffusion lengths is the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the experimental cell results measured at NASA Lewis under AMO (air mass zero) spectrum at 25 C. A 16 nm hole diffusion length in the emitter and a 0.42 micron electron diffusion length in the base gave very good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short current, open circuit voltage, and efficiency was studied. It is also observed that the front surface recombination velocity has very little influence on the cell performance. The poor output of heteroepitaxial cells is caused primarily by the large number of dislocations generated at the interfaces that propagate through the bulk indium phosphide layers. Cell efficiency as a function of dislocation density was calculated and the effect of improved emitter bulk properties on cell efficiency is presented. It is found that cells with over 16 percent efficiencies should be possible, provided the dislocation density is below 10(exp 6)/sq cm.

Jain, R. K.↗
NASA NTRS1988

High efficiency GaAs/Ge monolithic tandem solar cells

Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

Tobin, S. P.↗
NASA NTRS1991

Graded-bandgap AlGaAs solar cells for AlGaAs/Ge cascade cells

Some p/n graded-bandgap Al(x)Ga(1-x)As solar cells were fabricated and show AMO conversion efficiencies in excess of 15 percent without antireflection (AR) coatings. The emitters of these cells are graded between 0.008 is less than or equal to x is less than or equal to 0.02 during growth of 0.25 to 0.30 micron thick layers. The keys to achieving this performance were careful selection of organometallic sources and scrubbing oxygen and water vapor from the AsH3 source. Source selection and growth were optimized using time-resolved photoluminescence. Preliminary radiation-resistance measurements show AlGaAs cells degraded less than GaAs cells at high 1 MeV electron fluences, and AlGaAs cells grown on GaAs and Ge substrates degrade comparably.

Timmons, M. L.↗
NASA NTRS1991

Effects of proton irradiation on the performance of InP/GaAs solar cells

InP solar cells are known to be more radiation resistant than either GaAs or Si. In addition, AMO total area efficiencies approaching 19 percent were attained for InP. However, the present high substrate cost presents a barrier to the eventual widespread use of InP cells in space. In addition, if cell thinning becomes desirable, their relative fragility presents a problem. For these reasons, the NASA Lewis Research Center has initiated a program, aimed at producing thin InP cells, by heteroepitaxial deposition of InP on cheaper, more durable substrates. To date, a short term feasibility study as Spire has resulted in cells processed from InP heteroepitaxially deposited on Si substrates with an intervening thin GaAs layer (InP/GaAs/Si) and cells produced from InP deposited on GaAs (InP/GaAs). As a result of this short study efficiencies of over 7 and 9 percent were achieved for InP/GaAs/Si and InP/GaAs respectively. Although these efficiencies are low, they represent a modest and encouraging starting point for a more intensive program. Obviously, when considering economy and mechanical strength, cells processed on silicon substrates are preferred. However, although the InP/GaAs cells are not the final desirable products of this program, their properties serve to highlight several roadblocks to be overcome in producing cells with the more desirable cost and strength properties. Hence, in the present case, the properties of the InP/GaAs cells before and after irradiation by 10 MeV protons are examined. A similar study of InP/GaAs/Si cells will be reported on at a later date.

Weinberg, Irving↗
NASA NTRS1991

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Faur, Mircea↗
NASA NTRS1990

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Jain, Raj K.↗
NASA NTRS1991

Photometric analysis of a space shuttle water venting

Presented here is a preliminary interpretation of a recent experiment conducted on Space Shuttle Discovery (Mission STS 29) in which a stream of liquid supply water was vented into space at twilight. The data consist of video images of the sunlight-scattering water/ice particle cloud that formed, taken by visible light-sensitive intensified cameras both onboard the spacecraft and at the AMOS ground station near the trajectory's nadir. This experiment was undertaken to study the phenomenology of water columns injected into the low-Earth orbital environment, and to provide information about the lifetime of ice particles that may recontact Space Shuttle orbits later. The findings about the composition of the cloud have relevance to ionospheric plasma depletion experiments and to the dynamics of the interaction of orbiting spacecraft with the environment.

Viereck, R. A.↗
NASA NTRS1990

Tectonic motion and deformation from satellite laser ranging to Lageos

Data on satellite laser ranging (SLR) to Lageos aquired during the period 1978-1988 are analyzed on the basis of the precise modeling of the orbit dynamics of Lageos, producing estimates of tectonic motion for 22 sites located on seven major plates. It was estimated that intraplate motion within northern Europe is below the 2 mm/yr level in absolute rate, in agreement with conclusions of Zoback et al. (1989) regarding the stress across the region. A comparison of SLR geodesic rates with those from NUVEL-1 and AMO-2 models showed high correlations between tracking sites that are well within plate interiors, but displayed small but significant departures from unity in slope which are attributed to the possibility of recent changes in relative velocities or geologic time scale uncertainties. For lines crossing the Nnorth Atlantic, the San Andreas fault, and within the Basin and Range province, the geodesic rates determined by SLR are in good agreement with those determined by VLBI.

Smith, David E.↗
NASA NTRS1991

Overhauling, updating and augmenting NASA spacelink electronic information system

NASA/Spacelink is a collection of NASA information and educational materials stored on a computer at the MSFC. It is provided by the NASA Educational Affairs Division and is operated by the Education Branch of the Marshall Center Public Affairs Office. It is designed to communicate with a wide variety of computers and modems, especially those most commonly found in classrooms and homes. It was made available to the public in February, 1988. The system may be accessed by educators and the public over regular telephone lines. NASA/Spacelink is free except for the cost of long distance calls. Overhauling and updating Spacelink was done to refurbish NASA/Spacelink, a very valuable resource medium. Several new classroom activities and miscellaneous topics were edited and entered into Spacelink. One of the areas that received a major overhaul (under the guidance of Amos Crisp) was the SPINOFFS BENEFITS, the great benefits resulting from America's space explorations. The Spinoff Benefits include information on a variety of topics including agriculture, communication, the computer, consumer, energy, equipment and materials, food, health, home, industry, medicine, natural resources, public services, recreation, safety, sports, and transportation. In addition to the Space Program Spinoff Benefits, the following is a partial list of some of the material updated and introduced: Astronaut Biographies, Miscellaneous Aeronautics Classroom Activities, Miscellaneous Astronomy Classroom Activities, Miscellaneous Rocketry Classroom Activities, Miscellaneous Classroom Activities, NASA and Its Center, NASA Areas of Research, NASA Patents, Licensing, NASA Technology Transfer, Pictures from Space Classroom Activities, Status of Current NASA Projects, Using Art to Teach Science, and Word Puzzles for Use in the Classroom.

Blake, Jean A.↗
NASA NTRS1990

STS-41 Space Shuttle mission report

The STS-41 Space Shuttle Program Mission Report contains a summary of the vehicle subsystem activities on this thirty-sixth flight of the Space Shuttle and the eleventh flight of the Orbiter vehicle, Discovery (OV-103). In addition to the Discovery vehicle, the flight vehicle consisted of an External Tank (ET) (designated as ET-39/LWT-32), three Space Shuttle main engines (SSME's) (serial numbers 2011, 2031, and 2107), and two Solid Rocket Boosters (SRB's), designated as BI-040. The primary objective of the STS-41 mission was to successfully deploy the Ulysses/inertial upper stage (IUS)/payload assist module (PAM-S) spacecraft. The secondary objectives were to perform all operations necessary to support the requirements of the Shuttle Backscatter Ultraviolet (SSBUV) Spectrometer, Solid Surface Combustion Experiment (SSCE), Space Life Sciences Training Program Chromosome and Plant Cell Division in Space (CHROMEX), Voice Command System (VCS), Physiological Systems Experiment (PSE), Radiation Monitoring Experiment - 3 (RME-3), Investigations into Polymer Membrane Processing (IPMP), Air Force Maui Optical Calibration Test (AMOS), and Intelsat Solar Array Coupon (ISAC) payloads. The sequence of events for this mission is shown in tabular form. Summarized are the significant problems that occurred in the Orbiter subsystems during the mission. The official problem tracking list is presented. In addition, each Orbiter problem is cited in the subsystem discussion.

Camp, David W.↗
NASA NTRS1990

STS-31 Space Shuttle mission report

The STS-31 Space Shuttle Program Mission Report contains a summary of the vehicle subsystem activities on this thirty-fifth flight of the Space Shuttle and the tenth flight of the Orbiter Vehicle Discovery (OV-103). In addition to the Discovery vehicle, the flight vehicle consisted of an External Tank (ET) (designated as ET-34/LWT-27), three Space Shuttle main engines (SSME's) (serial numbers 2011, 2031, and 2107), and two Solid Rocket Booster (SRB) (designated as BI-037). The primary objective of the mission was to place the Hubble Space Telescope (HST) into a 330 nmi. circular orbit having an inclination of 28.45 degrees. The secondary objectives were to perform all operations necessary to support the requirements of the Protein Crystal Growth (PCG), Investigations into Polymer Membrane Processing (IPMP), Radiation Monitoring Equipment (RME), Ascent Particle Monitor (APM), IMAX Cargo Bay Camera (ICBC), Air Force Maui Optical Site Calibration Test (AMOS), IMAX Crew Compartment Camera, and Ion Arc payloads. In addition, 12 development test objectives (DTO's) and 10 detailed supplementary objectives (DSO's) were assigned to the flight. The sequence of events for this mission is shown. The significant problems that occurred in the Space Shuttle Orbiter subsystems during the mission are summarized, and the official problem tracking list is presented. In addition, each of the Space Shuttle Orbiter problems is cited in the subsystem discussion.

Camp, David W.↗
NASA NTRS1992

Further study of inversion layer MIS solar cells

Many inversion layer metal-insulator-semiconductor (IL/MIS) solar cells have been fabricated. As of today, the best cell fabricated by us has a 9.138 percent AMO efficiency, with FF = 0.641, V(sub OC) = 0.557 V, and I(sub SC) = 26.9 micro A. Efforts made for fabricating an IL/MOS solar cell with reasonable efficiencies are reported. The more accurate control of the thickness of the thin layer of oxide between aluminum and silicon of the MIS contacts has been achieved by using two different process methods. Comparison of these two different thin oxide processings is reported. The effects of annealing time of the sample are discussed. The range of the resistivity of the substrates used in the IL cell fabrication is experimentally estimated. Theoretical study of the MIS contacts under dark conditions is addressed.

Ho, Fat Duen↗
NASA NTRS1991

Radiation performance of GaAs concentrator cells for 0.4 to 12 MeV electrons and 0.1 to 37 MeV protons

Gallium arsenide concentrator cells have been irradiated with both electrons and protons with a wide variety of energies. The cells are made using OM-VPE growth process with a junction depth of a half micron. All data are taken with bare cells without coverglasses or shielding. Performance data are given at the designed concentration level of 100X AMO. Results are presented in a number of ways, including performance of electrical parameters (Pmax, Isc, and Voc) as a function of fluence for different electron and proton energies. Critical fluences (defined at a degradation of 25 percent in Pmax) are calculated for each energy level and presented for both electron and proton irradiations.

Curtis, Henry B.↗