Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “threshold voltage”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Double layers in contactor plasmas

The concept of using a hollow cathode to establish a low impedance contact between a spacecraft and the ambient plasma continues to gain in popularity, and is often then referred to as a plasma contactor. A growing number of studies indicate that large contact currents can be supported with small potential difference between the contactor and the ambient plasma. Results will be presented from a simple one-dimensional spherical model that obtains potentials from the solution of Poisson's equation, and particle densities from a turning point formalism that includes particle angular momentum. The neglect of collisions and magnetic field limits the realism. However, the results illustrate the effect of double layers that can form at the interface between contactor and ambient plasmas, when there is any voltage differential between the contactor and the ambient. The I-V characteristic of this model shows the usual space charge depends upon collection when the contactor flux is lower than some threshold; independence of I from variation in V when the flux is slightly greater than that threshold, and (numerical ?) instability for excessive flux suggesting the possibility of negative resistance. Even if a real I-V characteristic does not exhibit negative resistance, flat spots or high resistance regions may still be troublesome (or useful) to the total circuit.

Cooke, David L.↗
NASA NTRS1976

Effects of neutron irradiation on the characteristics of a buried channel CCD at 80 degrees Kelvin and 295 degrees Kelvin

Buried channel CCD shift registers were irradiated with 15 MeV neutrons. The irradiations were performed at 80 K and 295 K on operating devices with normal clocks and bias voltages applied. Dark current increased from the pre-irradiation value of 7 nA/sq cm to 1,600 nA/sq cm at 1 x 10 to the 13th power n/sq cm. The input gate threshold shift observed at 80K was minus 0.9 volts per 10 to the 13th power n/sq cm, a factor of 4 less than that predicted from a first order calculation of the equivalent ionization dose of neutrons in the oxide. Transfer efficiency measurements yielded a bulk electron trap creation rate for neutron irradiation of 14.0 cm to the minus 1 power at 295 K with a trap emission time constant of 25 microseconds.

Saks, N. S.↗
NASA NTRS2002

The Neutral Gas Desorption and Breakdown on a Metal-Dielectric Junction Immersed in a Plasma

New results are presented of an experimental study and theoretical analysis of arcing on metal-dielectric junctions immersed in a low-density plasma. Two samples of conventional solar arrays have been used to investigate the effects of arcing within a wide range of neutral gas pressures, ion currents, and electron number densities. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, intensities of spectral lines, and so on). Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are trip le-junctions, even though some arcs were initiated in gaps between cells. The effect of surface conditioning (decrease of arc rate due to outgassing) was clearly demonstrated. Moreover, a considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. The analysis of optical spectra (240-800 nm) reveals intense narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirm a complicated mechanism of arc plasma generation. The rate of plasma contamination due to arcing was measured by employing a mass-spectrometer. These measurements provided quite reliable data for the development of a theoretical model of plasma contamination, In conclusion, the arc threshold was increased to above 350 V (from 190 V) by keeping a sample in vacuum (20 micronTorr) for seven days. The results obtained are important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high voltage solar arrays for space applications.

Vayner, Boris↗
NASA NTRS2003

Experimental Study of Arcing on High-Voltage Solar Arrays

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism suggests that such modifications can be done in the following directions: 1) To insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); 2) To change a coverglass geometry (overhang); 3) To increase a coverglass thickness; 4) To outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in a large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that stimulates the LEO operational temperature. The experimental setup is described below.

Vayner, Boris↗
NASA NTRS2005

Experimental Study of Arcing on High-voltage Solar Arrays

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.

Vayner, Boris↗
NASA NTRS2006

Experimental Results of Thin-Film Photovoltaic Cells in a Low Density LEO Plasma Environment: Ground Tests

Plasma ground testing results, conducted at the Glenn Research Center (GRC) National Plasma Interaction (N-PI) Facility, are presented for a number of thin-film photovoltaic cells. The cells represent a mix of promising new technologies identified by the Air Force Research Laboratory (AFRL) under the CYGNUS Space Science Technology Experiment (SSTE-4) Program. The current ground tests are aimed at characterizing the performance and survivability of thin film technologies in the harsh low earth orbital space environment where they will be flown. Measurements of parasitic current loss, charging/dielectric breakdown of cover-slide coatings and arcing threshold tests are performed for each individual cell. These measurements are followed by a series of experiments designed to test for catastrophic arc failure mechanisms. A special type of power supply, called a solar array simulator (SAS) with adjustable voltage and current limits on the supply s output, is employed to bias two adjacent cells at a predetermined voltage and current. The bias voltage is incrementally ramped up until a sustained arc results. Sustained arcs are precursors to catastrophic arc failure where the arc current rises to a maximum value for long timescales often ranging between 30 to 100 sec times. Normal arcs by comparison, are short lived events with a timescale between 10 to 30 sec. Sustained arcs lead to pyrolization with extreme cell damage and have been shown to cause the loss of entire array strings in solar arrays. The collected data will be used to evaluate the suitability of thin-film photovoltaic technologies for future space operations.

Galofaro, Joel T.↗
NASA NTRS2012

Ion Current Density Study of the NASA-300M and NASA-457Mv2 Hall Thrusters

NASA Glenn Research Center is developing a Hall thruster in the 15-50 kW range to support future NASA missions. As a part of the process, the performance and plume characteristics of the NASA-300M, a 20-kW Hall thruster, and the NASA-457Mv2, a 50-kW Hall thruster, were evaluated. The collected data will be used to improve the fidelity of the JPL modeling tool, Hall2De, which will then be used to aid the design of the 15-50 kW Hall thruster. This paper gives a detailed overview of the Faraday probe portion of the plume characterization study. The Faraday probe in this study is a near-field probe swept radially at many axial locations downstream of the thruster exit plane. Threshold-based integration limits with threshold values of 1/e, 1/e2, and 1/e3 times the local peak current density are tried for the purpose of ion current integration and divergence angle calculation. The NASA-300M is operated at 7 conditions and the NASA-457Mv2 at 14 conditions. These conditions span discharge voltages of 200 to 500 V and discharge power of 10 to 50 kW. The ion current density profiles of the near-field plume originating from the discharge channel are discovered to strongly resemble Gaussian distributions. A novel analysis approach involving a form of ray tracing is used to determine an effective point of origin for the near-field plume. In the process of performing this analysis, definitive evidence is discovered that showed the near-field plume is bending towards the thruster centerline.

Huang, Wensheng↗
NASA NTRS1970

Research on variable threshold transistor storage systems

A fully integrated, electrically alterable, nonvolatile, nondestructive readout control memory was developed, using as storage elements metal-nitride-silicon variable threshold transistors. An optimum approach to such a memory was developed in which a three dimensional selection technique was used, both for read and write operations. Electrical isolation of writing and memory circuits was obtained by means of separate memory and write circuit chips. This method provided protection from voltage breakdowns, increased circuit flexibility, and greater ease of testing of interim and final circuit elements.

Wegener, H. A. R.↗
NASA NTRS1994

Unique passive diagnostic for slapper detonators

The objective of this study was to find a material and configuration that could reliably detect the proper functioning of a slapper (non-explosive) detonator. Because of the small size of the slapper geometry (on the order of a 15 mils), most diagnostic techniques are not suitable. This program has the additional requirements that the device would be used on centrifuge so that it could not use any electrical power or output signals. This required that the diagnostic be completely passive. The paper describes the three facets of the development effort: complete characterization of the slapper using VISAR measurements, selection of the diagnostic material and configuration, and testing of the prototype designs. The VISAR testing required that use of a special optical probe to allow the laser light to reach both bridges of the dual-slapper detonator. Results are given in the form of flyer velocity as a function of the initiating charge voltage level. The selected diagnostic design functions in a manner similar to a dent block except that the impact of the Kapton disk from a properly-functioning slapper causes a fracture pattern. A quick visual inspection is all that is needed to determine if the flyer velocity exceeded the threshold value. Sub-threshold velocities produce a substantially different appearance.

Brigham, William P.↗
NASA NTRS2012

Ion Current Density Study of the NASA-300M and NASA-457Mv2 Hall Thrusters

NASA Glenn Research Center is developing a Hall thruster in the 15-50 kW range to support future NASA missions. As a part of the process, the performance and plume characteristics of the NASA-300M, a 20-kW Hall thruster, and the NASA-457Mv2, a 50-kW Hall thruster, were evaluated. The collected data will be used to improve the fidelity of the JPL modeling tool, Hall2De, which will then be used to aid the design of the 15-50 kW Hall thruster. This paper gives a detailed overview of the Faraday probe portion of the plume characterization study. The Faraday probe in this study is a near-field probe swept radially at many axial locations downstream of the thruster exit plane. Threshold-based integration limits with threshold values of 1/e, 1/e(sup 2), and 1/e(sup 3) times the local peak current density are tried for the purpose of ion current integration and divergence angle calculation. The NASA-300M is operated at 7 conditions and the NASA-457Mv2 at 14 conditions. These conditions span discharge voltages of 200 to 500 V and discharge power of 10 to 50 kW. The ion current density profiles of the near-field plume originating from the discharge channel are discovered to strongly resemble Gaussian distributions. A novel analysis approach involving a form of ray tracing is used to determine an effective point of origin for the near-field plume. In the process of performing this analysis, definitive evidence is discovered that showed the near-field plume is bending towards the thruster centerline.

Huang, Wensheng↗
NASA NTRS2003

Evaluation of an Ultra-Low Power Reed Solomon Encoder for NASA's Space Technology 5 Mission

Radiation test results and analyses are presented for ultra-low power Reed Solomon encoder circuits that are being considered for use on the Space Technology 5 (ST5) mission. The total ionizing dose tolerance is in excess of 100 krad(Si) and is due to the low supply voltage and the use of back-bias, which suppresses radiation-induced leakage currents in the n-channel devices. The circuits do not latch-up for ion LET values of at least 90 MeV-sq cm/mg. A hardened-by-design approach to SEU has achieved an upset threshold of about 20 MeV-sq cm/mg. The SEU rate expected for these circuits in the geosynchronous transfer orbit of ST5 is low.

Lei, K. E.↗
NASA NTRS1989

Theoretical and material studies of thin-film electroluminescent devices

Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

Summers, C. J.↗
NASA NTRS1989

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

Kim, J. H.↗
NASA NTRS2007

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗
NASA NTRS2010

Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

Burns, Bradley M.↗
NASA NTRS2019

Method of Using Power Grid as Large Antenna for Geophysical Imaging

A high-voltage power transmission system is used as an extremely large antenna to extract spatiotemporal space, physical, and geological information from geomagnetically induced currents (GIC). A differential magnetometer method is used to measure GIC and involves acquiring line measurements from a first fluxgate magnetometer under a high-voltage transmission line, acquiring natural field measurements from a reference magnetometer nearby but not under the transmission line, subtracting the natural field measurements from the line measurements, and determining the GIC-related Biot-Savart field from the difference. NASA warning and alarm systems can be triggered based on determinations of GIC amplitude levels that exceed a set threshold value.

Pulkkinen, Antti A.↗
NASA NTRS2004

Central Stars of Planetary Nebulae in the SMC

In FUSE cycle 3's program C056 we studied four Central Stars of Planetary Nebulae (CSPN) in the Small Magellanic Could. All FUSE observations have been successfully completed and have been reduced and analyzed. The observation of one object (SMP SMC 5) appeared to be off-target and no useful stellar flux was gathered. For another observation (SMP SMC 1) the voltage problems resulted in the loss of data from one of the SiC detectors, but we were still able to analyze the remaining data. The analysis and the results are summarized below. The FUSE data were reduced using the latest available version of the FUSE calibration pipeline (CALFUSE v2.4). The flux of these SMC post-AGB objects is at the threshold of FUSE S sensitivity, and the targets required many orbit-long exposures, each of which typically had low (target) count-rates. The background subtraction required special care during the reduction, and was done in a similar manner to our FUSE cycle 2 BOO1 objects. The resulting calibrated data from the different channels were compared in the overlapping regions for consistency. The final combined, extracted spectra of each target was then modeled to determine the stellar and nebular parameters. The FUSE spectra, combined with archival HST spectra, have been analyzed using stellar atmospheres codes such as TLUSTY and CMFGEN to derive photospheric and wind parameters of the central stars, and with ISM models to determine the amount and temperature of the surrounding atomic and molecular hydrogen. We have combined these results with those of our cycle 4 (D034) program (CSPN of the LMC) in Herald & Bianchi 2004a (paper in preparation, will be submitted to ApJ in June 2004). Two of the three SMC objects analyzed were found to have significantly lower stellar temperatures than had been predicted using nebular photoionization models, indicating either a hotter ionizing companion or the existence of strong shocks in the nebular environment. The analysis also revealed that some objects are surrounded by significant quantities of hot (e.g., 1000- 2000 K) molecular H2, similar to what we found for some LMC and Galactic CSPN (Herald & Bianchi 2002, 2003a, b, 2004b, c, d).

Bianchi, Luciana↗
NASA NTRS1989

Transient fault behavior in a microprocessor: A case study

An experimental analysis is described which studies the susceptibility of a microprocessor based jet engine controller to upsets caused by current and voltage transients. A design automation environment which allows the run time injection of transients and the tracing from their impact device to the pin level is described. The resulting error data are categorized by the charge levels of the injected transients by location and by their potential to cause logic upsets, latched errors, and pin errors. The results show a 3 picoCouloumb threshold, below which the transients have little impact. An Arithmetic and Logic Unit transient is most likely to result in logic upsets and pin errors (i.e., impact the external environment). The transients in the countdown unit are potentially serious since they can result in latched errors, thus causing latent faults. Suggestions to protect the processor against these errors, by incorporating internal error detection and transient suppression techniques, are also made.

Duba, Patrick↗