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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.

annealing↗
NASA NTRS2000

Homoepitaxial ZnO Film Growth

ZnO films have high potential for many applications, such as surface acoustic wave filters, UV detectors, and light emitting devices due to its structural, electrical, and optical properties. High quality epitaxial films are required for these applications. The Al2O3 substrate is commonly used for ZnO heteroepitaxial growth. Recently, high quality ZnO single crystals are available for grow homoepitaxial films. Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films were also deposited on (0001) Al2O3 substrates. It was found that the two polar ZnO surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which strongly influence the epitaxial film growth. The morphology and structure of homoepitaxial films grown on the ZnO substrates were different from heteroepitaxial films grown on the Al2O3. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

Zhu, Shen↗
NASA NTRS1980

The influence of isothermal annealing on the molybdenum fibers of a directed solid gamma/gamma prime - alpha alloy

The mechanical characteristics of the directed solid eutectic Ni-Al-Mo (gamma/gamma prime)-alpha alloy at high temperatures make it useful in the blades of gas turbines. Structural changes are observed for the alloy under isothermal annealing, particularly the formation of molybdenum plates at the grain boundary and an increase of the gamma phase in relation to the gamma prime phase. Molybdenum lamellas appear at the grain boundary above 1100 C which can have a negative influence on the mechanical properties. The change in the structure near the grain boundary with the increase in temperature is illustrated through a sequence of pictures.

Whittenberger, J. D.↗
NASA NTRS1991

YBa2Cu3O(7-x)/Au/Nb device structures

Fabrication and testing of planar and edge geometry YBaCuO/Au/Nb superconductor/normal-metal/superconductor (SNS) device structures is described. Weak-link devices of this type serve as sensitive probes of the electrical quality of the YBaCuO/Au interface. The devices are fabricated using laser-ablated, in situ, c-axis-oriented YBaCuO thin films, with both annealed and unannealed YBaCuO/Au interfaces. The planar SNS structures are formed by sequential, in situ deposition of YBaCuO, Au, and Nb, followed by etching, planarization, and wiring electrode definition to produce junctions ranging from 5 to 20 micron on a side. Resulting RnA products are 1-10 x 10 to the -8th ohm-sq cm with critical current densities up to 5 kA/sq cm. For the edge geometry devices, the YBaCuO film edges are patterned using Ar ion milling, followed by a low energy ion cleaning step and in situ deposition of Au and Nb. Devices with areas in the 10 to the -7th to 10 to the -8th sq cm range have been fabricated with RnA products lower than 10 to the -8th ohm-sq cm and critical current densities up to 3kA/sq cm. Both types of devices show ac Josephson steps under microwave irradiation. The best results have been obtained with annealed YBaCuO/Au interfaces.

Hunt, B. D.↗
DOE OSTI2022

Sampling electronic structure quadratic unconstrained binary optimization problems (QUBOs) with Ocean and Mukai solvers

The most advanced D-Wave Advantage quantum annealer has 5000+ qubits, however, every qubit is connected to a small number of neighbors. As such, implementation of a fully-connected graph results in an order of magnitude reduction in qubit count. To compensate for the reduced number of qubits, one has to rely on special heuristic software such as qbsolv, the purpose of which is to decompose a large quadratic unconstrained binary optimization (QUBO) problem into smaller pieces that fit onto a quantum annealer. In this work, we compare the performance of the open-source qbsolv which is a part of the D-Wave Ocean tools and a new Mukai QUBO solver from Quantum Computing Inc. (QCI). The comparison is done for solving the electronic structure problem and is implemented in a classical mode (Tabu search techniques). The Quantum Annealer Eigensolver is used to map the electronic structure eigenvalue-eigenvector equation to a QUBO problem, solvable on a D-Wave annealer. We find that the Mukai QUBO solver outperforms the Ocean qbsolv with one to two orders of magnitude more accurate energies for all calculations done in the present work, both the ground and excited state calculations. This work stimulates the further development of software to assist in the utilization of modern quantum annealers.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Structural and thermodynamic evolution of an amorphous SiOC ceramic after swift heavy ion irradiation

Radiation induced structural and energetic changes have been widely studied in crystalline materials, but studied to a much lesser extent in amorphous solids. Using a combination of neutron pair distribution function (PDF) analysis and high temperature oxide melt solution calorimetry, we obtained critical insights into the structural and energetic evolution in a swift heavy ion irradiated amorphous SiOC polymer-derived ceramic. The radiation modified SiOC structure becomes energetically less stable by 24.0±1.6 kJ/mol compared to the unirradiated structure. This destabilization is related to decreased connectivity of the Si-O-C network and destruction of free carbon. In comparison with unirradiated SiOC, the irradiated structure is more likely to become phase separated during subsequent thermal annealing. Here, our study has important implications for evaluating amorphous SiOC ceramic as a possible radiation resistant structure for nuclear applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Integrated three-dimensional characterization of reactive phase formation and coarsening during isothermal annealing of metastable Zn–3Mg–4Al eutectic

Microstructural instabilities associated with a metastable lamellar eutectic when exposed to an elevated temperature were analyzed in a Zn-3Mg-4Al alloy as a model system. X-ray diffraction and scanning electron microscopy showed that annealing at a temperature 43 K below the equilibrium eutectic temperature converted the metastable ternary MgZn 2 /η-Zn/β-ZnAl eutectic to a stable mixture of Mg 2 Zn 11 /η-Zn/α-Al. 3D EBSD suggested that supersaturation of η-Zn with Mg and Al eased difficulties in nucleation of Mg 2 Zn 11 and α-Al at the MgZn 2 /η-Zn phase interfaces. Quasi-in-situ X-ray nanotomography revealed that a reactive diffusion process prevailed in an early stage of annealing leading to rapid consumption of MgZn 2 for growth of Mg 2 Zn 11 and concomitant thinning and pinch-off of η-Zn lamellae. The reactive diffusion process also brought about significant and quantifiable changes in the topological characteristics of the η-Zn phase at remarkably shorter time scales compared to Rayleigh instability and Ostwald ripening mechanisms. Overall, the present results provide fresh insights on the short-term annealing effects on metastable eutectics, with relevance to structural evolution in additive manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Atomic Structure Evolution of Pt–Co Binary Catalysts: Single Metal Sites versus Intermetallic Nanocrystals

Due to their exceptional catalytic properties for the oxygen reduction reaction (ORR) and other crucial electrochemical reactions, PtCo intermetallic nanoparticle (NP) and single atomic (SA) Pt metal site catalysts have received considerable attention. However, their formation mechanisms at the atomic level during high-temperature annealing processes remain elusive. Furthermore, the thermally driven structure evolution of Pt–Co binary catalyst systems is investigated using advanced in situ electron microscopy, including PtCo intermetallic alloys and single Pt/Co metal sites. The pre-doping of CoN 4 sites in carbon supports and the initial Pt NP sizes play essential roles in forming either Pt 3 Co intermetallics or single Pt/Co metal sites. Importantly, the initial Pt NP loadings against the carbon support are critical to whether alloying to L1 2 -ordered Pt 3 Co NPs or atomizing to SA Pt sites at high temperatures. High Pt NP loadings (e.g., 20%) tend to lead to the formation of highly ordered Pt 3 Co intermetallic NPs with excellent activity and enhanced stability toward the ORR. In contrast, at a relatively low Pt loading (<6 wt%), the formation of single Pt sites in the form of PtC 3 N is thermodynamically favorable, in which a synergy between the PtC 3 N and the CoN 4 sites could enhance the catalytic activity for the ORR, but showing insufficient stability.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tracing Phase Transformation and Lattice Evolution in a TRIP Sheet Steel under High-Temperature Annealing by Real-Time In Situ Neutron Diffraction

Real-time in situ neutron diffraction was used to characterize the crystal structure evolution in a transformation-induced plasticity (TRIP) sheet steel during annealing up to 1000 °C and then cooling to 60 °C. Based on the results of full-pattern Rietveld refinement, critical temperature regions were determined in which the transformations of retained austenite to ferrite and ferrite to high-temperature austenite during heating and the transformation of austenite to ferrite during cooling occurred, respectively. The phase-specific lattice variation with temperature was further analyzed to comprehensively understand the role of carbon diffusion in accordance with phase transformation, which also shed light on the determination of internal stress in retained austenite. These results prove the technique of real-time in situ neutron diffraction as a powerful tool for heat treatment design of novel metallic materials.

Yu, Dunji [ORNL] (ORCID:0000000189467851)↗
DOE OSTI2020

O 2 -Oxidation of Individual Graphite and Graphene Nanoparticles in the 1200 – 2200 K Range: Particle-to-Particle Variations and the Evolution of the Reaction Rates and Optical Properties

The kinetics for O 2 oxidation of individual graphite and graphene platelet nanoparticles (NPs) were studied as a function of temperature (1200 to 2200 K) at varying oxygen partial pressures, using a single nanoparticle mass spectrometry method. NP temperature (TNP) was measured by measuring the NP thermal emission spectra during the kinetics studies. The initial oxidation efficiency is found to peak in the 1200 to 1500 K range, dropping by an order of magnitude as TNP was increased above 2000 K. There were large NP-to-NP variations in the oxidation rates, attributed to variations in the NP surface structure. In addition, the oxidation efficiencies evolved, non-monotonically, as the NPs reacted, decreasing by factors of between 10 and 300. This evolution of reactivity is attributed to changes in the NP surface structure due to the combination of oxidation and annealing. In conclusion, the optical properties, including wavelength dependence of the emissivity and the absorption cross section for the 532 nm heating laser, also tended to evolve as the NPs oxidized, but differently for each individual NP, presumably reflecting differences in the initial structures and their evolution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Breaking New Ground: MB ene Route toward Selective Vinyl Double Bond Hydrogenation in Nitroarenes

Doping, or incremental substitution of one element for another, is an effective way to tailor a compound’s structure as well as its physical and chemical properties. Herein, we replaced up to 30% of Ni with Co in members of the family of layered LiNiB compounds, stabilizing the high-temperature polymorph of LiNiB while the room-temperature polymorph does not form. By studying this layered boride with in situ high-temperature powder diffraction, we obtained a distorted variant of LiNi 0.7 Co 0.3 B featuring a perfect interlayer placement of [Ni 0.7 Co 0.3 B] layers on top of each other–a structural motif not seen before in other borides. Because of the Co doping, LiNi 0.7 Co 0.3 B can undergo a nearly complete topochemical Li deintercalation under ambient conditions, resulting in a metastable boride with the formula Li 0.04 Ni 0.7 Co 0.3 B. Heating of Li 0.04 Ni 0.7 Co 0.3 B in anaerobic conditions led to yet another metastable boride, Li 0.01 Ni 0.7 Co 0.3 B, with a CoB-type crystal structure that cannot be obtained by simple annealing of Ni, Co, and B. No significant alterations of magnetic properties were detected upon Co-doping in the temperature-independent paramagnet LiNi 0.7 Co 0.3 B or its Li-deintercalated counterparts. Finally, Li 0.01 Ni 0.7 Co 0.3 B stands out as an exceptional catalyst for the selective hydrogenation of the vinyl C=C bond in 3-nitrostyrene, even in the presence of other competing functional groups. Finally, this research showcases an innovative approach to heterogeneous catalyst design by meticulously synthesizing metastable compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

LT-LiNi 1/3 Mn 1/3 Co 1/3 O 2 : A Partially-Disordered, Composite Rock Salt Cathode Prepared by Flame Spray Pyrolysis for Li-Ion Batteries

A unique composite cathode structure for Li-ion batteries, designated LT-LiNi 1/3 Mn 1/3 Co 1/3 O 2 (or LT-NMC111), has been prepared by flame spray pyrolysis and subsequent annealing between 400 and 650 °C. It is composed predominantly of structurally-integrated and partially-disordered lithiated-spinel and layered components, both of which can be broadly described as partially-disordered rock salt constituents. The paper describes the evolution of the LT-NMC111 structure as a function of the synthesis method, annealing temperature, and electrochemical properties in the context of other recently reported “low-temperature” (LT) materials, such as LT-LiCo 1−x Al x O 2 and LT-LiMn 0.5 Ni 0.5 O 2 or, in spinel notation, LT-Li 2 Co 2–2x Al 2x O 4 and LT-Li 2 MnNiO 4 , respectively.

25 ENERGY STORAGE↗
DOE OSTI2020

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. Here, the laser method provides enhanced conductivity and implied open circuit voltage while reducing emitter saturation current density and surface heating, as opposed to conventional high-temperature furnace annealing of the bulk Si wafer with a TOPCon structure. We identify an appropriate laser wavelength, fluence, and layer thickness using modeling and simulations. Raman and Hall effect measurements demonstrate increased crystallinity and dopant activation, whereas photoconductive decay shows enhanced surface and interface passivation quality. Additionally, we examine the role of subsequent SiNx deposition on further improving the passivation of laser-processed TOPCon layers to achieve a 5.9 kΩ/sq film sheet resistance, 2 ms effective carrier lifetime, 718 mV implied open-circuit voltage (iVOC), and 8.6 fA/cm 2 one-side recombination current density (J0) with the potential for further passivation improvement via laser process and a-Si layer thickness optimization.

14 SOLAR ENERGY↗
NASA NTRS1985

Microscopic defect structures and equivalent electron fluence concepts

The lack of additivity of proton and electron exposure of GaAs solar cells has been established as due to macroscopic variations in defect densities. The difference in annealing in proton and electron exposure is herein related to the microscopic variation in defect structures. Electron equivalence can be established when annealing is present only for high energy electrons.

Stith, John J.↗
DOE OSTI2021

Effects of a Layered Morphology on Drip Suppression in Burning Polymers

Fire safety in polymers is critically important with products such as textiles and consumer goods, as well as materials used in construction, aerospace, transportation, and furniture. Additives used as anti-dripping and flame-retardant agents impose acute human health issues and have negative environmental impacts. With a focus on developing additive-free solutions, here we used multilayer coextrusion to fabricate layered polyethylene/polypropylene (PE/PP) films and investigated the effect of a layered morphology on dripping and burning rates. The experimental results for multilayered PE/PP samples were compared to control groups of melt blended PE/PP samples. The multilayer configuration provides two significant advantages: 154% delay in the time to the first drip and up to 87% reduction in the number of drips compared to the value for the melt blended samples with no additives. PE/PP blends with up to 2 wt % polytetrafluoroethylene, a commonly used anti-dripping agent in the industry, showed only 85% delay in the time to the first drip and about 60% reduction in the number of drips. We discovered a linear relationship between film thickness and burning rate, which allows for the use of the volumetric burning rate to normalize the effect of film thickness. No benefit in the burning rate was observed when comparing multilayered structures and conventional melt blended architectures or blends with PTFE. Annealing studies and transmission electron microscopy at areas close to the combustion zones confirmed that higher extensional viscosities induced by the layered structures and morphological changes due to the layer breakup play an important role in reducing dripping. By combining the first drip time and overall drip numbers, a parameter, “dripping index”, was defined to establish a fire safety map to simplify material comparisons. This study demonstrates that a multilayer film geometry can provide an additive-free solution to yield control over fire safety parameters in polymers.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Structural transition and recovery of Ge implanted β -Ga 2 O 3

Ion implantation-induced effects were studied in Ge implanted β-Ga 2 O 3 with the fluence and energy of 3 × 10 13 cm -2 /60 keV, 5 × 10 13 cm -2 /100 keV, and 7 × 10 13 cm -2 /200 keV using analytical electron microscopy via scanning/transmission electron microscopy, electron energy loss spectroscopy, and precession electron diffraction via TopSpin. Imaging shows an isolated band of damage after Ge implantation, which extends ~130 nm from the sample surface and corresponds to the projected range of the ions. Electron diffraction demonstrates that the entirety of the damage band is the κ phase, indicating an implantation-induced phase transition from β to κ-Ga 2 O 3 . Post-implantation annealing at 1150 °C for 60 s under the O 2 atmosphere led to a back transformation of κ to β; however, an ~17 nm damage zone remained at the sample surface. Despite the back transformation from κ to β with annealing, O K-edge spectra show changes in the fine structure between the pristine, implanted, and implanted-annealed samples, and topspin strain analysis shows a change in strain between the two samples. These data indicate differences in the electronic/chemical structure, where the change of the oxygen environment extended beyond the implantation zone (~130 nm) due to the diffusion of Ge into the bulk material, which, in turn, causes a tensile strain of 0.5%. This work provides a foundation for understanding of the effects of ion implantation on defect/phase evolution in β-Ga 2 O 3 and the related recovery mechanism, opening a window toward building a reliable device for targeted applications.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Pre- and post-annealing of mechanical damage in silicon wafers

Basic properties of mechanical damage in silicon consisting of cracks and abrasion were studied using transmission electron microscopy. The crystallographic structure of mechanical damage was determined before and after high temperature annealing. The main findings include that stresses in silicon around crack tips are not plastically relieved at room temperature and that abrasion at room temperature introduces shear loops into the silicon. It was also found that cracks of micron size can be annealed out, specifically, if cleavage occurs on 111 planes. The healing products of such cracks are 60 deg and 90 deg dislocations. Submicron cracks transform into stacking faults during annealing. Likewise high concentrations of shear loops due abrasion were found to anneal into stacking faults. A one to one correlation between surface areas containing small cracks and stacking faults was made. Measurements of damage removal on silicon surfaces through chemical-mechanical etching techniques are presented. It is shown that silicon dioxide repolishes damaged silicon surfaces most effectively.

Schwottke, G. H.↗