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At least 235 records · Page 13

Nanostructured Materials Development for Space Power

There have been many recent advances in the use of nanostructured materials for space power applications. In particular, the use of high purity single wall nanotubes holds promise for a variety of generation and storage devices including: thin film lithium ion batteries, microelectronic proton exchange membrane (PEM) fuel cells, polymeric thin film solar cells, and thermionic power supplies is presented. Semiconducting quantum dots alone and in conjunction with carbon nanotubes are also being investigated for possible use in high efficiency photovoltaic solar cells. This paper will review some of the work being done at RIT in conjunction with the NASA Glenn Research Center to utilize nanomaterials in space power devices.

Raffaelle, Ryne P.↗

Modeling of Carbon Nanotube Schottky Barrier Reduction for Holes in Air

A model is proposed for the recently observed lower Schottky barrier for holes in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. In air, the CNT is oxidized. The oxygen molecules on the CNT surface will attract negative charges and will be negatively charged. The negative charges on the solid surface generally enhance the surface dipole and provide stronger electron confinement within the solid. Thus the CNT work function will increase in air. Then the Schottky barrier for holes will have to increase in air according to the standard band-alignment theory, but this is against the experiment. In order to overcome this difficulty, we propose a new Schottky barrier model, assuming that there is a transition region between the electrode and the CNT, where an appreciable potential can drop. We assume that electrodes are placed at the side of the CNT and the contact is formed via the van der Waals interaction. Since the electrode surface is not atomically flat in practical situations, the contact will not be intimate and there will be a transition region before the usual metallic bulk structure starts. In this view, the Schottky barrier is determined not only by the work function difference of the electrodes and the CNT, but also by the potential drop in the transition region. The oxidation increases the potential drop and leads to a lower Schottky barrier for holes. This relation will be demonstrated in a graphical manner by expressing the potential drop as a function of CNT band bending. The potential drop is comparable to the CNT band gap when, e.g., the transition region is about a few Angstroms thick, the oxygen molecule coverage is about 10 %, and an oxygen molecule is charged by about 0.01-0.1 of the unit charge (1-10 % of molecules are charged). The proposed mechanism prevails for both p - and n-CNTs. The model consistently explains the CNT oxidation experiments reported so far.

Yamada, Toshishige↗

Modeling of Carbon Nanotube Schottky Barrier Reduction for Holes in Air

A model is proposed for the previously reported lower Schottky barrier for holes Phi(sub Bh) in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. We consider that there is a transition region between the electrode and the CNT, and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules on the CNT, leading to lower Phi(sub Bh) after oxidation. The mechanism prevails in both p- and n-CNTs, and the model consistently explains the key experimental findings.

Yamada, Toshishige↗

Characterizations of Enriched Metallic Single-Walled Carbon Nanotubes in Polymer Composite

Using different processing conditions, we disperse the single-walled carbon nanotube (SWNT) into the polymethyl methacrylate (PMMA) to form composites. In the melt-blended sample, the SWNTs originally semiconducting - became predominantly metallic after dispersion into the melt-blended composite. The interaction of the PMMA and SWNT is investigated by the polarized Raman studies. The structure changes in the PMMA and SWNT shows that the anisotropic interactions are responsible for SWNT electronic density of states (DOS) changes. The increased metallic SWNT percentage is confirmed by the conductivity and dielectric constant measurements .

Chen, Bin↗

Multi-Scale Simulations of Carbon Nanotubes: Mechanics and Electronics

Carbon Nanotube (CNT) is a tubular form of carbon with diameter as small as 1 nm. Length: few mn to microns. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits extraordinary mechanical properties; Young's modulus over 1 Tera Pascal, as stiff as diamond, and tensile strength approx. 200 GPa. CNT can be metallic or semiconducting, depending on chirality.

Srivastava, Deepak↗

Solar Arrays for Direct-Drive Electric Propulsion: Arcing at High Voltages

The results from an experimental investigation to assess arcing during operation of high voltage solar arrays in a plasma environment are presented. The experiments were part of an effort to develop systems that would allow safe operation of Hall-Effect Thrustefls) in direct-drive mode. Arc discharges are generated when the array is biased negative with respect to the plasma. If sustained for long periods of time between adjacent solar cells, arcs may severely damage a solar array, thus significantly shortening its lifetime. Most often sustained arcs are triggered by plasma produced during short-duration discharge arcs (approximately 20 microseconds). These trigger arcs are sparked between the semiconducting cell and the covering dielectric. Both trigger and sustained (greater than 1 millisecond) arcs have been captured during the tests. Current and voltage waveforms associated with the different arc events are presented. The test results have defined operational limits (thresholds) for the various array concepts studied that minimize the likelihood of damage from sustained arcs. Experimental trends regarding the effect of the solar array substrate on arc duration are also presented.

Schneider, Todd A.↗

Structural Fluctuation and Thermophysical Properties of Molten II-VI Compounds

The objectives of the project is to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs and to study the fundamental heterophase fluctuations phenomena in these melts by: 1) Conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts such as viscosity, electrical conductivity, thermal diffusivity and density as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) Performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed similar relaxation behavior as the measured diffusivity. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previous reported.

Source record↗

Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications

The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.

Triplett, G. E., Jr.↗

Arrays of Bolometers for Far-infrared and Submillimeter Astronomy

We describe 12 x 32 arrays of semiconducting cryogenic bolometers designed for use in far-infrared and submillimeter cameras. These 12 x 32 arrays are constructed from 1 x 32 monolithic pop-up detectors developed at NASA Goddard Space Flight Center. The pop-up technology allows the construction of large arrays with high filling factors that provide efficient use of space in the focal planes of far-infrared and submillimeter astronomical instruments. This directly leads to a significant decrease in observing time. The prototype array is currently operating in SHARC II, a facility instrument in use at the Caltech Submillimeter Observatory (CSO). The elements of this array employ a bismuth absorber coating and quarter wave backshort to optimize the bolometer absorption for a passband centered at 350 microns. However, this resonant structure also provides good bolometer performance at 450 and 850 microns, the two additional SHARC II passbands. A second array is to be installed in the High-resolution Airborne Widebandwidth Camera (HAWC), a far-infrared imaging camera for the Stratospheric Observatory for Infrared Astronomy (SOFIA). This array is currently in the final stage of construction, and its completion is expected in early 2004. HAWC is scheduled for commissioning in 2005. The HAWC array employs titanium-gold absorbers and is optimized for uniform absorption from 40 to 300 microns to accommodate all four of its far-infrared passbands. We describe the details of the array construction including the mechanical design and electrical characterization of the constituent linear arrays, comparing the SHARC II and HAWC cases. We also summarize the overall characteristics of the final two-dimensional arrays. Finally, we show examples of array performance in the form of images obtained with SHARC II.

Chuss, D. T.↗

Strain Sensitivity in Single Walled Carbon Nanotubes for Multifunctional Materials

Single walled carbon nanotubes represent the future of structural aerospace vehicle systems due to their unparalleled strength characteristics and demonstrated multifunctionality. This multifunctionality rises from the CNT's unique capabilities for both metallic and semiconducting electron transport, electron spin polarizability, and band gap modulation under strain. By incorporating the use of electric field alignment and various lithography techniques, a single wall carbon nanotube (SWNT) test bed for measurement of conductivity/strain relationships has been developed. Nanotubes are deposited at specified locations through dielectrophoresis. The circuit is designed such that the central, current carrying section of the nanotube is exposed to enable atomic force microscopy and manipulation in situ while the transport properties of the junction are monitored. By applying this methodology to sensor development a flexible single wall carbon nanotube (SWNT) based strain sensitive device has been developed. Studies of tensile testing of the flexible SWNT device vs conductivity are also presented, demonstrating the feasibility of using single walled HiPCO (high-pressure carbon monoxide) carbon nanotubes as strain sensing agents in a multi-functional materials system.

Heath, D. M.↗

Physics of Quantum Structures in Photovoltaic Devices

There has been considerable activity recently regarding the possibilities of using various nanostructures and nanomaterials to improve photovoltaic conversion of solar energy. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of three-dimensional arrays of zero-dimensional conductors (i.e., quantum dots) in an ordinary p-i-n solar cell structure. Quantum dots and other nanostructured materials may also prove to have some benefits in terms of temperature coefficients and radiation degradation associated with space solar cells. Two-dimensional semiconductor superlattices have already demonstrated some advantages in this regard. It has also recently been demonstrated that semiconducting quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. Improvement in thin film cells utilizing conjugated polymers has also be achieved through the use of one-dimensional quantum structures such as carbon nanotubes. It is believed that carbon nanotubes may contribute to both the disassociation as well as the carrier transport in the conjugated polymers used in certain thin film photovoltaic cells. In this paper we will review the underlying physics governing some of the new photovoltaic nanostructures being pursued, as well as the the current methods being employed to produce III-V, II-VI, and even chalcopyrite-based nanomaterials and nanostructures for solar cells.

Raffaelle, Ryne P.↗

Silicon Carbide Nanotube Synthesized

Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

Lienhard, Michael A.↗

Preparation and Thermoelectric Properties of Semiconcucting Zn(sub 4) Sb(sub 3)

Hot-pressed samples fothe semiconducting compound Beta - Zn(sub 4) Sb(sub 3) were prepared and characterized by x-ray and microprobe analysis. Some physical properties of Beta - Zn(sub 4) Sb(sub 3) were determined and its thermoelectric properties measured between room temperature and 650K.

Beta Zn4Sb3 semiconductors semiconductor compounds↗

Electron Microscopy of Natural and Epitaxial Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. Ultimately, it is preferable to use low-defect-density single crystal diamond for device fabrication. We have previously investigated polycrystalline diamond films with transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and homoepitaxial films with SEM-based techniques. This contribution describes some of our most recent observations of the microstructure of natural diamond single crystals and homoepitaxial diamond thin films using TEM.

Posthill, J. B.↗

Electrohydrodynamically patterned colloidal crystals

A method for assembling patterned crystalline arrays of colloidal particles using ultraviolet illumination of an optically-sensitive semiconducting anode while using the anode to apply an electronic field to the colloidal particles. The ultraviolet illumination increases current density, and consequently, the flow of the colloidal particles. As a result, colloidal particles can be caused to migrate from non-illuminated areas of the anode to illuminated areas of the anode. Selective illumination of the anode can also be used to permanently affix colloidal crystals to illuminated areas of the anode while not affixing them to non-illuminated areas of the anode.

Hayward, Ryan C.↗

In-Field Diffuse Ultraviolet Spectroscopy and Imaging of the Stardust Sample Return Capsule

In-field diffuse Ultraviolet (UV) spectroscopy and imaging systems were developed for the purposes of evaluating the surface chemical composition of spacecraft thermal control coatings and materials. The investigation of these systems and the compilation of an associated UV reflectance and luminescence database were conducted using the Stardust Sample Return Capsule (SRC), located at the Johnson Space Center. Spectral responses of the surfaces of the Stardust forebody and aftbody in both reflectance and fluorescence modes were examined post-flight. In this paper, we report on two primary findings of in-field diffuse UV spectroscopy and imaging: (1) deduction of the thermal history of thermal control coatings of the forebody and (2) bond line variations in the aftbody. In the forebody, the thermal history of thermal control coatings may be deduced from the presence of particular semiconducting defect states associated with ZnO, a common emissivity constituent in thermal control coatings. A spatial dependence of this history was mapped for these regions. In the aftbody, luminescing defect states, associated with Si and SiO2 color centers were found along regions of bond variability.

Pugel, D. Elizabeth↗

Thermoelectric Properties of Self Assemble TiO2/SnO2 Nanocomposites

Recent advances in improving efficiency of thermoelectric materials are linked to nanotechnology. Thermodynamically driven spinodal decomposition was utilized to synthesize bulk nanocomposites. TiO2/SnO2 system exhibits a large spinodal region, ranging from 15 to 85 mole % TiO2. The phase separated microstructures are stable up to 1400 C. Semiconducting TiO2/SnO2 powders were synthesized by solid state reaction between TiO2 and SnO2. High density samples were fabricated by pressureless sintering. Self assemble nanocomposites were achieved by annealing at 1000 to 1350 C. X-ray diffraction reveal phase separation of (Ti(x)Sn(1-x))O2 type phases. The TiO2/SnO2 nanocomposites exhibit n-type behavior; a power factor of 70 (mu)W/m sq K at 1000 C has been achieved with penta-valent doping. Seebeck, thermal conductivity, electrical resistivity and microstructure will be discussed in relation to composition and doping.

Dynys, Fred↗

Kilopixel Pop-Up Bolometer Arrays for the Atacama Cosmology Telescope

The recently deployed Atacama Cosmology Telescope (ACT) anticipates first light on its kilopixel array of close-packed transition-edge-sensor bolometers in November of 2007. The instrument will represent a full implementation of the next-generation, large format arrays for millimeter wave astronomy that use superconducting electronics and detectors. Achieving the practical construction of such an array is a significant step toward producing advanced detector arrays for future SOFIA instruments. We review the design considerations for the detector array produced for the ACT instrument. The first light imager consists of 32 separately instrumented 32-channel pop-up bolometer arrays (to create a 32x32 filled array of mm-wave sensors). Each array is instrumented with a 32-channel bias resistor array, Nyquist filter array, and time-division SQUID multiplexer. Each component needed to be produced in relatively large quantities with suitable uniformity to meet tolerances for array operation. An optical design was chosen to maximize absorption at the focal plane while mitigating reflections and stray light. The pop-up geometry (previously implemented with semiconducting detectors and readout on the SHARC II and HAWC instruments) enabled straightforward interface of the superconducting bias and readout circuit with the 2D array of superconducting bolometers. The array construction program balanced fabrication challenges with assembly challenges to deliver the instrument in a timely fashion. We present some of the results of the array build and characterization of its performance.

Chervenak, J. A.↗