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At least 235 records · Page 13

Ordering in GaAs co-doped with Bi and N

Introducing only a few atomic percent of Bi or N in GaAs has a large effect on the band gap of the material. Specifically Bi doped GaAs shows potential for local band gap engineering in optoelectronic applications. The incorporation of Bi and N into GaAs is difficult due to strain effects. In this work we study the ordering of these dopants at the atomic scale in order to get a better understanding of the behavior of these dopants in the host lattice. Cross-sectional scanning tunneling microscopy is used to find the exact position of Bi and N dopants in the GaAs matrix, allowing us to study both their nearest neighbor pair occurrences and pair correlation functions. An attractive interaction between Bi dopants at short ranges (1-2 nm) is found and a similar effect is observed between N dopants. Here, we find a repulsive interaction with a similar length scale between Bi and N dopants. A similar repulsion is found in the Bi-N nearest neighbor pairs. Density functional theory is used to calculate the different nearest neighbor pair energies and test these results to the experimental pair occurrences. It is concluded from the experimental and theoretical results that the growth conditions and N inclusion greatly affects the Bi distribution in GaAs.

36 MATERIALS SCIENCE↗

Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer

Local strain-dependent spin-polarized electronic structure of a two-dimensional (2D) magnetic layer is an exciting property for practical applications. For example, it holds the promise for advanced ultrathin spintronic nanodevices with customized electronic and magnetic properties by local strain engineering. Here, we demonstrate that the spin-polarized electronic structure of a 2D manganese gallium nitride (MnGaN-2D) magnetic monolayer is sensitive to intrinsic local lattice strain, as proven by first-principles calculations and indicated by scanning tunneling spectroscopy measurements. Atomic resolution images reveal a highly non-Gaussian lattice spacing/strain distribution, while the spectroscopy reveals variations in the electronic density of states. Simulations of the MnGaN-2D monolayer based on first-principles calculations, including both isotropic and anisotropic strains, confirm a highly strain-dependent manganese partial density of states. Spin-orbit coupling is included which indicates either out-of-plane perpendicular magnetic anisotropy (PMA) or in-plane magnetic anisotropy, dependent on the type of strain whether compressive or tensile, suggesting that MnGaN-2D is magnetoelastic. The MnGaN-2D PMA is further supported by superconducting quantum interference device magnetometry measurements which reveal a high spin polarization of ~ 79 % at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Growth, characterization, and Chern insulator state in MnBi 2⁢ Te 4 via the chemical vapor transport method

As the first intrinsic antiferromagnetic topological insulator, MnBi 2 Te 4 has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi 2 Te 4 , as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi 2 Te 4 via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi 2 Te 4 is marked with higher Mn occupancy on the Mn site, slightly higher Mn Bi antisites, smaller carrier concentration, and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm 2 V s in MnBi 2 Te 4 devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Furthermore, our study provides a route to obtain high-quality single crystals of MnBi 2 Te 4 that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous Hall effect, etc.

36 MATERIALS SCIENCE↗

Etching sharp tips from thin metallic wires for tuning-fork-based scanning probe microscopy

Sharp tips are critical for obtaining high resolution images in scanning probe microscopy (SPM), particularly in samples with large variations in topography. For tuning-fork-based SPM, such tips are commonly obtained by electrochemical etching of metallic wires (e.g., tungsten). Electrochemical etching of metallic wires is the preferred means of preparing tips for scanning tunneling microscopy (STM), and techniques for obtaining sharp tips have been investigated extensively. However, the requirements for STM and tuning-fork-based SPM are different. In particular, the wires used in STM are typically 250-500 μ m in diameter, while the wires used for tuning-fork-based SPM are usually an order of magnitude narrower in order to minimize loading of the tuning fork: 25-50 μ m and sometimes down to a few micrometers in diameter. Consequently, many of the recipes developed for etching thicker metallic wires for STM tips do not give optimal results for smaller diameter wires. The authors describe here a modification of the etching circuit of Ibe et al . that significantly improves the reproducibility and reliability of the etching process for thin wires, and discuss the parameters that affect the aspect ratio of produced tips.

42 ENGINEERING↗

Conversion of Formic Acid on Single- and Nano-Crystalline Anatase TiO 2 (101)

Understanding thermochemical transformations of formic acid (FA) on metal oxide surfaces is important for many catalytical reactions. Here we study thermally induced reactions of FA on a single-crystalline and nanocrystalline anatase TiO 2 (101). We employ a combination of scanning tunneling microscopy (STM), temperature-programmed desorption (TPD), infrared reflection absorption spectroscopy (IRAS), diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS), and density functional theory (DFT) to follow the FA surface intermediates and reaction products above room temperature. We find that the primary reaction products desorbing at about 300, 480, and 515 K are molecular water, carbon monoxide, and formaldehyde, respectively. Bidentate (BD) formate and bridging hydroxyl (HO b ) are identified as central intermediates in the FA transformations. Bridging oxygen vacancies (V O ) are also likely participants despite their low stability at the surface. In conclusion, the parallel studies on single crystals and faceted TiO 2 (101) nanoparticles reveal the spectroscopic commonalities of surface species and of the thermal conversion of molecular and deprotonated forms of FA.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Intrinsic nature of chiral charge order in the kagome superconductor Rb V 3 Sb 5

Superconductors with kagome lattices have been identified for over 40 years, with a superconducting transition temperature T c up to 7 K. Recently, certain kagome superconductors have been found to exhibit an exotic charge order, which intertwines with superconductivity and persists to a temperature being one order of magnitude higher than T c . Here, we use scanning tunneling microscopy to study the charge order in kagome superconductor Rb V 3 Sb 5 . We observe both a 2×2 chiral charge order and nematic surface superlattices (predominantly 1×4). We find that the 2×2 charge order exhibits intrinsic chirality with magnetic field tunability. Defects can scatter electrons to introduce standing waves, which couple with the charge order to cause extrinsic effects. While the chiral charge order resembles that discovered in KV 3 Sb 5 , it further interacts with the nematic surface superlattices that are absent in KV 3 Sb 5 but exist in CsV 3 Sb 5 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Atomic step disorder on polycrystalline surfaces leads to spatially inhomogeneous work functions

Structural disorder causes materials’ surface electronic properties, e.g., work function (ϕ), to vary spatially, yet it is challenging to prove exact causal relationships to underlying ensemble disorder, e.g., roughness or granularity. For polycrystalline Pt, nanoscale resolution photoemission threshold mapping reveals a spatially varying ϕ=5.70±0.03 eV over a distribution of (111) vicinal grain surfaces prepared by sputter deposition and annealing. With regard to field emission and related phenomena, e.g., vacuum arc initiation, a salient feature of the ϕ distribution is that it is skewed with a long tail to values down to 5.4 eV, i.e., far below the mean, which is exponentially impactful to field emission via the Fowler–Nordheim relation. We show that the ϕ spatial variation and distribution can be explained by ensemble variations of granular tilts and surface slopes via a Smoluchowski smoothing model wherein local ϕ variations result from spatially varying densities of electric dipole moments, intrinsic to atomic steps, that locally modify ϕ. Atomic step-terrace structure is confirmed with scanning tunneling microscopy (STM) at several locations on our surfaces, and prior works showed STM evidence for atomic step dipoles at various metal surfaces. From our model, we find an atomic step edge dipole μ=0.12 D/edge atom, which is comparable to values reported in studies that utilized other methods and materials. Our results elucidate a connection between macroscopic ϕ and the nanostructure that may contribute to the spread of reported ϕ for Pt and other surfaces and may be useful toward more complete descriptions of polycrystalline metals in the models of field emission and other related vacuum electronics phenomena, e.g., arc initiation.

36 MATERIALS SCIENCE↗

Microscopic Scattering Approach to In-Gap States

We develop a microscopic scattering formalism to describe Yu-Shiba-Rusinov (YSR) states due to a single Cr adatom on the Bi-terminated surface of beta Bi2Pd, by combining ab initio Wannier functions with a real-space Green's function approach in the Bogoliubov-de Gennes formalism[1]. Our framework reproduces key scanning tunneling spectroscopy features, including a single particle-hole asymmetric YSR peak and isotropic dIdV maps around the impurity. Decomposing the YSR states reveals contributions from four nearly degenerate C4v representations, with energy broadening masking their individual signatures. Spin-orbit coupling induces partial spin polarization, while the spatial asymmetry between particle and hole components arises from Cr d-Bi p hybridization. These results highlight the importance of realistic band structures and microscopic modeling for interpreting STM data for magnetic in-gap states on superconductors. Further advances examining layered 2D material surfaces, such as NbSe2, will be described[2]. For this system the superconducting properties are obtained from a full anisotropic Eliashberg calculation of the superconducting order parameter along with the charge density wave gap. Additional features associated with proposals to measure the dynamics of these individual YSR states will be presented. [1] arXiv:2507.08740 [2] arXiv:2507.11856

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Bayesian Learning of Adatom Interactions from Atomically Resolved Imaging Data

Atomic structures and adatom geometries of surfaces encode information about the thermodynamics and kinetics of the processes that lead to their formation, and which can be captured by a generative physical model. In this work, we develop a workflow based on a machine-learning-based analysis of scanning tunneling microscopy images to reconstruct the atomic and adatom positions, and a Bayesian optimization procedure to minimize statistical distance between the chosen physical models and experimental observations. We optimize the parameters of a 2- and 3-parameter Ising model describing surface ordering and use the derived generative model to make predictions across the parameter space. For concentration dependence, we compare the predicted morphologies at different adatom concentrations with the dissimilar regions on the sample surfaces that serendipitously had different adatom concentrations. The proposed workflow can be used to reconstruct the thermodynamic models and associated uncertainties from the experimental observations of materials microstructures. The code used in the manuscript is available at https://github.com/saimani5/Adatom_interactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Atomically precise digital e-beam lithography

Hydrogen Depassivation Lithography (HDL) is a version of electron beam lithography that uses scanning tunneling microscope (STM) instrumentation to expose a self–developing resist that is a monolayer of H chemisorbed to a Si (100) 2x1 H-passivated surface. Developed in the 1990s it has been largely a laboratory tool used in research for nanofabrication. Here, the technique is capable of atomic resolution, the ability to remove single H atoms from the Si surface and has much higher precision than the best conventional e-beam lithography can possibly achieve exposing polymeric resists. However, its most promising attribute is that it can be used as a digital fabrication tool and is the first of a class of nanofabrication techniques that can be considered digital atomic scale fabrication technologies. Digital Atomic Scale Fabrication can be shown to have similar advantages over analog fabrication techniques that digital information technology has over analog information technology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Robust topological state against magnetic impurities observed in the superconductor PbTaSe 2

Magnetic impurities deposited on topological superconductor candidate PbTaSe 2 can introduce a nonsplitting zero-energy state inside the superconducting gap, which has been proposed as a field-free platform for topological zero modes. However, it is still unclear how robust the topological state in PbTaSe 2 is against magnetic impurities, which is related to the topological nature of the zero-energy state as well as its potential for quantum computation. In this paper, we use scanning tunneling microscopy to study the topological surface state in the normal state of PbTaSe 2 under the perturbation of magnetic impurities. We visualize the quasiparticle interference (QPI) arising from the topological surface state. We then deposit Fe impurities on the surface to form atomic Fe adatoms. We find that each Fe adatom sits at a unique interstitial position on the surface and features a local state at high energies, both of which are consistent with our first-principles calculation that further reveals its large magnetic moment. Our systematic Fe deposition and subsequent measurements show that the arclike QPI pattern at the Fermi energy is robust with up to 3% Fe coverage where the atomic nature of Fe adatoms still holds. Our results provide evidence that the topological surface state at the Fermi energy in PbTaSe 2 is robust against dilute magnetic impurities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Competing Intermolecular and Molecule–Surface Interactions: Dipole–Dipole-Driven Patterns in Mixed Carborane Self-Assembled Monolayers

Carboranedithiol isomers adsorbing with opposite orientations of their dipoles on surfaces are self-assembled together to form mixed monolayers where both lateral dipole–dipole and lateral thiol–thiolate (S–H···S) interactions provide enhanced stability over single-component monolayers. Here, we demonstrate the first instance of the ability to map individual isomers in a mixed monolayer using the model system carboranedithiols on Au{111}. The addition of methyl groups to one isomer provides both an enhanced dipole moment and extra apparent height for differentiation via scanning tunneling microscopy (STM). Associated computational investigations rationalize favorable interactions of mixed pairs and the associated stability changes that arise from these interactions. Both STM images and Monte Carlo simulations yield similarly structured mixed monolayers, where approximately 10% of the molecules have reversed dipole moment orientations but no direct chemical attachment to the surface, leading to homogeneous monolayers with no apparent phase separation. Deprotonating the thiols by depositing the molecules under basic conditions eliminates the lateral S–H···S interactions while accentuating the dipole–dipole forces. The molecular system investigated is composed of isomeric molecules with opposite orientations of dipoles and identical surface packing, which enables the mapping of individual molecules within the mixed monolayers and enables analyses of the contributions of the relatively weak lateral interactions to the overall stability of the assemblies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Understanding Methanol Synthesis on Inverse ZnO/CuO x /Cu Catalysts: Stability of CH 3 O Species and Dynamic Nature of the Surface

Inverse ZnO/Cu catalysts are key systems in the conversion of CO 2 , a common atmospheric pollutant, into methanol, a high-value chemical and fuel. The chemistry of methanol and methoxy groups over inverse ZnO/Cu 2 O/Cu(111) catalysts was investigated employing Ambient Pressure X-ray Photoelectron Spectroscopy (AP-XPS), Scanning Tunneling Microscopy (STM) and calculations based on Density Functional Theory (DFT). The results of AP-XPS show that the adsorption of methanol on the binary oxide substrate at 300 K leads to formation of *CH 3 O and *HCOO species with a minor amount of *CH x . Furthermore, most of the methoxy groups disappeared from the surface after heating to 450 K, the onset temperature for the formation of methanol during the hydrogenation of CO 2 . The results of AP-XPS, STM and DFT point to preferential adsorption of methoxy on the ZnO regions of the binary oxide. On the supported ZnO or on a ZnO-Cu 2 O interface, the breaking of the O-H bond in methanol is an exothermic process with a negligible (1-2 kcal/mol) or non-existent energy barrier depending on the size and shape of the ZnO islands. STM

36 MATERIALS SCIENCE↗

Highly Asymmetric Graphene Layer Doping and Band Structure Manipulation in Rare Earth–Graphene Heterostructure by Targeted Bonding of the Intercalated Gadolinium

Heterostructures consisting of vertically stacked two-dimensional (2D) materials have recently gained large attention due to their highly controllable electronic properties and resulting quantum phases. In contrast to the mechanically stacked multilayered systems, which offer exceptional control over a stacking sequence or interlayer twist angles, the epitaxially grown 2D materials express unprecedented quality and stability over wafer-scale lengths. However, controlling the growth conditions remains a major obstacle toward the formation of complex, epitaxial heterostructures with well-defined electronic properties. Here, we synthesized a trilayer graphene heterostructure on the SiC(0001) substrate with two specific interlayer locations occupied by gadolinium. We applied multitechnique methodology based on low-temperature scanning tunneling microscopy/spectroscopy (STM/S) and angle-resolved photoelectron spectroscopy (ARPES) to determine the intercalant’s locations in the complex, epitaxial graphene heterostructure. Our approach relies on very high quality and large, micrometer-scale homogeneity of the synthesized system. The experimentally determined electronic structure is dominated by the two topmost graphene layers. Overall, our spectroscopic results show quantitative agreement between global ARPES, local STM/S, and density functional theory predictions. The characterized electronic properties primarily reflect highly anisotropic doping levels between the two corresponding graphene layers, which significantly affect the band structure topology. Two pairs of hybridized massive Dirac bands from our initial synthesis–the bilayer graphene on the SiC(0001) substrate–are transformed upon Gd intercalation into two pairs of massless Dirac bands with a new hybridization region in between. Our results open perspectives in the realization of exotic 2D quantum materials via atomically precise synthesis of epitaxial, multilayered graphene–rare earth heterostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Understanding palladium–tellurium cluster formation on WTe2: From a kinetically hindered distribution to thermodynamically controlled monodispersity

Abstract A fundamental understanding of the transition metal dichalcogenide (TMDC)–metal interface is critical for their utilization in a broad range of applications. We investigate how the deposition of palladium (Pd), as a model metal, on WTe2(001), leads to the assembly of Pd into clusters and nanoparticles. Using X-ray photoemission spectroscopy, scanning tunneling microscopy imaging, and ab initio simulations, we find that Pd nucleation is driven by the interaction with and the availability of mobile excess tellurium (Te) leading to the formation of Pd-Te clusters at room temperature. Surprisingly, the nucleation of Pd-Te clusters is not affected by intrinsic surface defects, even at elevated temperatures. Upon annealing, the Pd-Te nanoclusters adopt an identical nanostructure and are stable up to ∼523 K. Density functional theory calculations provide a foundation for our understanding of the mobility of Pd and Te atoms, preferential nucleation of Pd-Te clusters, and the origin of their annealing-induced monodispersity. These results highlight the role the excess chalcogenide atoms may play in the metal deposition process. More broadly, the discoveries of synthetic pathways yielding thermally robust monodispersed nanostructures on TMDCs are critical to the manufacturing of novel quantum and microelectronics devices and catalytically active nano-alloy centers.

36 MATERIALS SCIENCE↗

Imaging the Breakdown and Restoration of Topological Protection in Magnetic Topological Insulator MnBi 2 Te 4

Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral 1D edge states. Yet, in magnetic topological insulators to date, topological protection is far from robust, with zero-magnetic field QAH effect only realized at temperatures an order of magnitude below the Néel temperature T N , though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realizing QAH effect at higher temperatures. Here a scanning tunneling microscope is used to directly map the size of exchange gap (E g,ex ) and its spatial fluctuation in the QAH insulator 5-layer MnBi 2 Te 4 . Long-range fluctuations of E g,ex are observed, with values ranging between 0 (gapless) and 70 meV, appearing to be uncorrelated to individual surface point defects. The breakdown of topological protection is directly imaged, showing that the gapless edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless regions in the bulk. Finally, it is unambiguously demonstrated that the gapless regions originate from magnetic disorder, by demonstrating that a small magnetic field restores E g,ex in these regions, explaining the recovery of topological protection in magnetic fields. The results indicate that overcoming magnetic disorder is the key to exploiting the unique properties of QAH insulators.

36 MATERIALS SCIENCE↗

Low Temperature Oxygen Activation on the NiAg(100) Single-Atom Alloy Surface

Silver-catalyzed ethylene epoxidation remains the only industrially viable route for ethylene oxide (EO) production. However, this process requires chlorine and other promoters to achieve a high EO selectivity while still generating substantial CO 2 emissions. A recent theory-guided approach identified Ni, in single-atom alloy (SAA) form, as a new promoter of this reaction. Specifically, the addition of Ni to Ag nanoparticles supported on α-Al 2 O 3 at a highly diluted ratio (1 Ni per 200 Ag atoms) increased catalyst selectivity to EO by ∼25%, the same increase afforded by the ubiquitous industrial promoter chlorine. To better understand the effect of Ni, we investigated the interaction of O 2 with NiAg(100) SAA surfaces by using scanning tunneling microscopy (STM) and density functional theory (DFT). While only molecular O 2 was present when pure Ag(100) was exposed to O 2 at 78 K, a distinct NiO 2 species, indicative of O 2 dissociation at Ni atom sites, was identified on the NiAg(100) SAA under the same conditions. High-resolution STM imaging backed by DFT simulations elucidated the formation of an O−Ni−O species with the oxygen atoms in 4-fold hollow sites. These findings provide direct experimental evidence that Ni atoms are very effective at O 2 activation, even at cryogenic temperatures. This suggests that, in addition to the known role of Ni in stabilizing the unselective nucleophilic oxygen on Ag, it could also accelerate O 2 dissociation, which can be rate limiting.

Catalysts↗

Ferromagnetic Insulator to Metal Transition in Noncentrosymmetric Graphene Nanoribbons

Engineering sublattice imbalance within the unit cell of bottom-up synthesized graphene nanoribbons (GNRs) represents a versatile tool for realizing custom-tailored quantum nanomaterials. The interaction between low-energy zero-modes (ZMs) not only contributes to frontier bands but can form the basis for magnetically ordered phases. Here, we present the bottom-up synthesis of a noncentrosymmetric GNR that places all ZMs on the majority sublattice sites. Scanning tunneling microscopy and spectroscopy reveal that strong electron–electron correlations, leading to the Stoner magnetic instability, drive the system into a ferromagnetically ordered insulating ground state featuring a sizable band gap of E g ∼1.2 eV. At higher temperatures, a chemical transformation induces an insulator-to-metal transition that quenches the ferromagnetic order. Tight-binding (TB), density functional theory, and GW calculations corroborate our experimental observations. Furthermore, this work showcases how control over molecular symmetry, sublattice polarization, and ZM hybridization in bottom-up synthesized nanographenes can open a path to the exploration of many-body physics in rationally designed quantum materials.

Band structure↗