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At least 235 records · Page 13

Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS 2 devices

Here we report on the depinning of nearly commensurate charge-density waves in 1T-TaS 2 thin films at room temperature. A combination of the differential current–voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS 2 is not accompanied by an observable abrupt increase in electric current—in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS 2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density wave islands. The depinning fields in 1T-TaS 2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density wave devices in electronics.

2D materials↗

Does photoinduced structural change by β-rhombohedral boron occur at room temperature?

β-rhombohedral boron (β-B) is an intriguing solid among the elements. The crystal structure of β-B is widely accepted as a complex structure based on the B 12 clusters, and with a lot of intrinsic structural defects. In the last decade, β-B was proved to be the only elemental semiconductor that exhibits the self-compensation property accompanied by changing structural defects during atom doping. Moreover, it is reported that various physical properties of β-B change discontinuously around 550 K, which may originate from defect diffusion [S. Hoffmann and H. Werheit, Solid State Sciences 14, 1572 (2012)]. We previously reported that a volume expansion of about 1.5% takes place above this temperature (between 650 K and 850 K). On the other hand, this expanded structure is stable in dark conditions for more than 4.5 months. Finally, light irradiation at room temperature reverses the volume back to the initial state, and a possible scenario will be discussed in this paper.

36 MATERIALS SCIENCE↗

Crystal Structure Evolution of UCl 3 from Room Temperature to Melting

We report uranium trichloride (UCl 3 ) is actively researched to develop and improve applications ranging from molten salt reactors to actinide processing, including spent fuel reprocessing. Here, we report for the first time the crystal structure evolution between room temperature and melting point from in situ high-temperature neutron diffraction to quantify, for example, the thermal expansion of the hexagonal a and c lattice parameters. The results are compared with density functional theory calculations. The melting point of UCl 3 is determined by differential scanning calorimetry to be 1108.2 ± 0.2 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Air-Stable Room-Temperature Quasi-2D Tin Iodide Perovskite Microlasers

Quasi-2D tin iodide perovskites (TIPs) are promising lead-free alternatives for optoelectronic applications, but achieving stable lasing remains challenging due to their limited environmental stability. Here, we report air-stable, room-temperature lasing from quasi-2D TIP microcrystals as small as 4 μm. Incorporation of the organic spacer 5IPA3 significantly enhanced the stability of these materials compared with previously reported TIPs. Lasing was observed from both dielectric (n = 4) and plasmonic (n = 3 and n = 4) TIP microlasers. Under picosecond pumping, lasing was sustained for over 108 pump pulses in ambient conditions. These results represent a significant step toward practical photonic applications of tin-based perovskites.

crystals↗

Bottom-up fabrication of scalable room-temperature diamond quantum computing and sensing technologies

The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.

CVD↗

Room Temperature, Dip Coating Organic Passivation for c-Si Surfaces

Surface passivation of crystalline Si (c-Si) to reduce recombination rate is crucial to obtain high-efficiency c-Si solar cells. A fast passivation technique that can be performed at room temperature is needed when studying the degradation behaviors using various characterization methods to not destroy the degraded states. In this contribution, we explore Nafion via dip coating on n-type Cz wafers. We show that both the Nafion concentration and the conditions of surface and edge affect the passivation quality, and we achieve excellent passivation quality of iVoc of 716 mV, with a saturation current density (J0) of 7 fA/cm2. Additionally, electron paramagnetic resonance (EPR) shows Nafion can be used under cryogenic temperature and reveals the reduction of Si dangling bond after Nafion treatment.

dielectric solar cell↗

Room-temperature fabrication of garnet-type solid-electrolyte: Optimizing particle size for high ionic conductivity

Dense and uniform Li 6.25 Al 0.25 La 3 Zr 2 O 12 (Al-doped LLZO) solid-electrolyte film of ~24 µm thickness is successfully fabricated by room temperature aerosol deposition (AD) method. The process optimization study revealed that careful control of particle size and morphology is one of critical determinants in the development of a compact AD membrane. Notably, our method facilitated an impressive ionic conductivity of approximately 10 –5 S cm –1 , bypassing the necessity for post-annealing processes, a milestone in itself. However, it is hypothesized that the attained conductivity is somewhat restrained by factors such as smaller grain size and potential surface degradation due to moisture exposure during fabrication, indicating avenues for further research. Looking forward, detailed investigations into the film's microstructure and its impact on transport properties will be a focal point, alongside potential enhancements through post-annealing and particle coating strategies. Finally, this research hints at a promising trajectory for the development of high-efficiency solid-state battery technology.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Pressure-induced structural and dielectric changes in liquid water at room temperature

Understanding the pressure-dependent dielectric properties of water is crucial for a wide range of scientific and practical applications. In this study, we employ a deep neural network trained on density functional theory data to investigate the dielectric properties of liquid water at room temperature across a pressure range of 0.1–1000 MPa. We observe a nonlinear increase in the static dielectric constant ɛ 0 with increasing pressure, a trend that is qualitatively consistent with experimental observations. This increase in ɛ 0 is primarily attributed to the increase in water density under compression, which enhances collective dipole fluctuations within the hydrogen-bonding network as well as the dielectric response. Despite the increase in ɛ 0 , our results reveal a decrease in the Kirkwood correlation factor G K with increasing pressure. Furthermore, this decrease in G K is attributed to pressure-induced structural distortions in the hydrogen-bonding network, which weaken dipolar correlations by disrupting the ideal tetrahedral arrangement of water molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Liquid-type room-temperature fluoride ion batteries

The present disclosure relates to fluoride ion batteries and structures of metal based electrode materials for various fluoride ion batteries. The structures of the metal based electrode materials comprise one or more shells or interfaces, enabling the electrodes to operate at room temperature with a liquid electrolyte.

Xu, Qingmin↗

A Robust Methodology to Elucidate Kinetics of Room Temperature Electrochemical Propane Adsorption on Platinum

Electrocatalytic activation of alkanes can further decarbonize chemical manufacturing by leveraging affordable renewable electricity and readily available shale gas reserves in the United States. Earlier works have identified the unique role of Pt in adsorbing and activating alkanes, like propane, at room temperature in acidic, aqueous electrolytes, revealing spontaneous formation of deeply dehydrogenated propane-derived surface species with an intact C 3 - backbone. Although an adsorption mechanism was hypothesized, it has not been explicitly investigated to date, preventing the quantification of kinetic rate parameters. A robust methodology to investigate and benchmark propane adsorption kinetics on Pt is critical for the rational design of electrocatalysts that exhibit higher selectivity toward desired partially oxidized products. Herein, we analyze an oxidative current transience that appears during the adsorption of propane on Pt in aqueous electrochemical conditions and develop a methodology that elucidates the adsorption mechanism and enables quantification of rate parameters such as order dependences and apparent activation barriers. This method yields an expected first-order dependence with respect to propane concentration at low coverage and reveals a second-order dependence with respect to the concentration of surface active sites. Additionally, the apparent activation barrier for propane adsorption was calculated using an Arrhenius analysis of the current transience under temperature control. The experimentally measured activation barrier of 35 kJ mol –1 is in excellent agreement with the theoretical barrier calculated by density functional theory (DFT). The kinetic analysis was extended, via the use of transition state theory, to extract entropy and enthalpy of activation, yielding consistent results with the proposed two-step adsorption mechanism and DFT calculations. These results demonstrate reliable quantification of kinetic parameters for electrocatalytic activation of C–H bonds in alkanes that can be employed for rational catalyst development for a versatile range of electrocatalytic conditions.

alkane activation↗

Determination of electron-hole pair creation energy in Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 quaternary semiconductor for room-temperature gamma-ray detection

We report the first-time measurement of the electron-hole pair (ehp) creation energy (W ehp ) in novel Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large-volume room-temperature gamma-ray detectors due to its excellent compositional homogeneity with highly reduced defects, high-Z (atomic number) constituents, wide bandgap (1.6 eV), and superior charge transport properties. Despite a great deal of study of the material and device properties since its inception, the W ehp in CZTS has not been measured experimentally. Accurate determination of W ehp is essential for calibration of the spectrometer and other theoretical calculations. In this study we have used an absolute calibration approach, which is based on an iterative approach that yields the Wehp as the best-fit parameter. Using a 241 Am alpha emitting radioisotope and a planar CZTS detector, the Wehp in CZTS was calculated to be 4.47 eV. The obtained value has been validated by accurately predicting the peak energy for gamma rays emitted by a 137 Cs source and read by a CZTS detector with different dimensions. The dependences of the calculated W ehp value on the detector dimensions, type of interaction, and effect of charge trapping are also discussed.

42 ENGINEERING↗

High-angular-momentum Rydberg states in a room-temperature vapor cell for dc electric-field sensing

We prepare and analyze Rydberg states with orbital quantum numbers ℓ ≤ 6 using three-optical-photon electromagnetically induced transparency (EIT) and radio frequency (rf) dressing, and employ the high- ℓ states in electric-field sensing. Rubidium-85 atoms in a room-temperature vapor cell are first promoted into the 25 F 5 / 2 state via Rydberg-EIT with three infrared laser beams. Two rf dressing fields then (near-)resonantly couple the 25 F , 25 H ( ℓ = 5 ) , and 25 I ( ℓ = 6 ) Rydberg states. The dependence of the rf-dressed Rydberg-state level structure on rf powers, rf and laser frequencies is characterized using EIT. Furthermore, we discuss the principles of dc-electric-field sensing using high- ℓ Rydberg states and experimentally demonstrate the method using test electric fields of ≲ 50 V/m induced via photo-illumination of the vapor-cell wall. We measure the highly nonlinear dependence of the dc-electric-field strength on the power of the photo-illumination laser. Numerical calculations, which reproduce our experimental observations well, elucidate the underlying physics. Our paper is relevant to high-precision spectroscopy of high- ℓ Rydberg states, Rydberg-atom-based electric-field sensing, and plasma electric-field diagnostics. Published by the American Physical Society 2024

Duspayev, Alisher (ORCID:0000000153225762)↗

A strain-driven thermotropic phase boundary in BaTiO 3 at room temperature by cycling compression

In BaTiO 3 single crystals, we observed a strain-driven phase transition from the tetragonal phase to the tetragonal-orthorhombic phase boundary which can be introduced by slow cycling compressions (a loading of up to 0.5 GPa, strain rate of 10 -4 s -1 , and 100 cycles) at room temperature. Different from the well-known tetragonal to cubic phase transition under stress (~2 GPa), it only takes place locally around bent 90° domain walls. The inhomogeneous local stress and electrical fields as well as the mobile point defect pinning effect contribute to the phase re-entrance. Through comparison experiments by in situ synchrotron x-ray diffraction, Raman scattering, and (scanning) transmission electron microscopy, we explored the phase transition mechanism. Based on that, we developed a mechanical method to obtain well-stabilized high-density thermotropic phase boundary structures (with tetragonal, orthorhombic, and bridging monoclinic phases) in BaTiO 3 for potential applications.

36 MATERIALS SCIENCE↗

A room-temperature polarization-sensitive CMOS terahertz camera based on quantum-dot-enhanced terahertz-to-visible photon upconversion

Detection of terahertz (THz) radiation has many potential applications, but presently available detectors are limited in many aspects of their performance, including sensitivity, speed, bandwidth and operating temperature. Most do not allow the characterization of THz polarization states. Recent observation of THz-driven luminescence in quantum dots offers a possible detection mechanism via field-driven interdot charge transfer. Here, we demonstrate a room-temperature complementary metal–oxide–semiconductor THz camera and polarimeter based on quantum-dot-enhanced THz-to-visible upconversion mechanism with optimized luminophore geometries and fabrication designs. Besides broadband and fast responses, the nanoslit-based sensor can detect THz pulses with peak fields as low as 10 kV cm–1. A related coaxial nanoaperture-type device shows a to-date-unexplored capability to simultaneously record the THz polarization state and field strength with similar sensitivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor

Abstract Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and certain topological properties, such as the Berry curvature and the quantum metric tensor, have attracted considerable interest. Here, we report giant room-temperature nonlinearities in non-centrosymmetric two-dimensional topological materials—the Janus transition metal dichalcogenides in the 1 T’ phase, synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently show orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities in 1 T’ MoSSe (e.g., > 50 times higher than 2 H MoS 2 for 18 th order harmonic generation; > 20 times higher than 2 H MoS 2 for terahertz emission). We link this giant nonlinear optical response to topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and heralds the applications of topological materials in optoelectronics down to the monolayer limit.

42 ENGINEERING↗

Photo‐Induced Charge State Dynamics of the Neutral and Negatively Charged Silicon Vacancy Centers in Room‐Temperature Diamond

Abstract The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at room temperature. Here, multi‐color confocal microscopy and density functional theory are used to examine photo‐induced SiV recombination — from neutral, to single‐, to double‐negatively charged — over a broad spectral window in chemical‐vapor‐deposition (CVD) diamond under ambient conditions. For the SiV 0 to SiV ‐ transition, a linear growth of the photo‐recombination rate with laser power at all observed wavelengths is found, a hallmark of single photon dynamics. Laser excitation of SiV ‒ , on the other hand, yields only fractional recombination into SiV 2‒ , a finding that is interpreted in terms of a photo‐activated electron tunneling process from proximal nitrogen atoms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Room temperature XFEL crystallography reveals asymmetry in the vicinity of the two phylloquinones in photosystem I.

Photosystem I (PS I) has a symmetric structure with two highly similar branches of pigments at the center that are involved in electron transfer, but shows very different efficiency along the two branches. We have determined the structure of cyanobacterial PS I at room temperature (RT) using femtosecond X-ray pulses from an X-ray free electron laser (XFEL) that shows a clear expansion of the entire protein complex in the direction of the membrane plane, when compared to previous cryogenic structures. This trend was observed by complementary datasets taken at multiple XFEL beamlines. In the RT structure of PS I, we also observe conformational differences between the two branches in the reaction center around the secondary electron acceptors A 1A and A 1B . The π-stacked Phe residues are rotated with a more parallel orientation in the A-branch and an almost perpendicular confirmation in the B-branch, and the symmetry breaking PsaB-Trp673 is tilted and further away from A 1A . These changes increase the asymmetry between the branches and may provide insights into the preferential directionality of electron transfer.

59 BASIC BIOLOGICAL SCIENCES↗