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At least 235 records · Page 13

Initial aging phenomena in copper-chromium alloys

The effects of quenching and aging temperatures on the initial aging curves of Cu-Cr alloy were examined mainly by means of electrical resistivity measurements. Three Cu-Cr alloy specimens having 0.24, 0.74, and 1.0% Cr were solution-treated at 950-1050 C, quenched into ice-water, and subsequently aged at 300-500 C. The results were as follows: (1) At the very early stage of aging (within about 30 sec), an abrupt decrease of resistivity with lowering aging tempratures. (T sub A) and rising solution temperatures (T sub S) was observed at (T sub A) up to about 400 C. In contrast, a transient increase of resistivity with rising T sub A and lowering T sub S was observed at T sub A from about 450 to 500 C. These phenomena seem to be caused by a rapid formation of solute clusters and the reversion of clusters formed during quenching, which are enhanced by quenched-in vacancies, respectively. (2) The amount of precipitation increased at the latter stage of aging with rising T sub S and T sub A as generally expected, where T sub S was not so high as to form secondary defects. (3) As a result, the initial aging phenomena in Cr-Cr alloy were revealed to be complicated against expectations. This was considered to be due to the migration energy of vacancies so larger in Cu-base.

Suzuki, H.↗

Tuning the Superconducting Transition Temperature of Co-sputtered Iridium and Platinum Films

A superconducting film with a tunable low transition temperature (Tc) is required in high-resolution Transition-Edge Sensor (TES) detectors, which have applications including dark matter detection, low threshold coherent elastic neutrino nucleus scattering measurement, and X-ray spectroscopy. We have been investigating a new approach to tune the Tc of superconducting thin films fabricated by co-sputtering Iridium and Platinum. The effects of Pt concentration and deposition parameters on the films' structural, electrical, and superconducting properties have been studied. AFM and XRD techniques and low temperature resistance measurements have been utilized for film characterization. By varying the Pt concentration and deposition parameters when co-sputtering, we have successfully achieved controllable tuning of Tc in the range of 30-200 mK. The experimental results demonstrate co-sputtering as a viable method for controlling the Tc of Ir-based thin films that can be applied to fabricating high-resolution TESs.

Yefremenko, V. G.↗

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone on TEXUS36

Several pg experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1 998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗

A Thermally-Conductive Martian Core and Implications for Its Dynamo Cessation

Mars experienced a dynamo process that generated a global magnetic field ~4.3 (or earlier) to 3.6 billion years ago (Ga). The cessation of this dynamo strongly affected Mars’ history and is expected to be linked to thermochemical evolution of Mars’ iron-rich liquid core, which is strongly influenced by its thermal conductivity. Here, we directly measured thermal conductivities of solid iron-sulfur alloys to pressures relevant to the Martian core and temperatures to 1023 Kelvin. Our results show that a Martian core with 16 weight % sulfur has a thermal conductivity of ~19 to 32 Watt meter −1 Kelvin −1 from its top to the center, much higher than previously inferred from electrical resistivity measurements. Our modeled thermal conductivity profile throughout the Martian deep-mantle and core indicates a ~4- to 6-fold discontinuity across the core-mantle boundary. The core’s efficient cooling resulting from the depth-dependent, high conductivity diminishes thermal convection and forms thermal stratification, substantially contributing to cessation of Martian dynamo.

Wen-Pin Hsieh↗

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone Under Microgravity

USA Several microgravity experiments on sounding rockets and the Space Shuttle have shown that time-dependent thermocapillary (Marangoni) convection is the major cause for the formation of dopant striations in floating-zone grown semiconductor crystals, at least in small-scale systems not employing RF heating. To quantify this correlation, a silicon floating-zone experiment was performed during the TEXUS36 flight (February 7, 1998) in the monoellipsoid mirror furnace TEM02-ELLI. During the experiment, temperature fluctuations in the silicon melt zone and the microscopic growth rate were simultaneously measured. Temperature fluctuations of 0.5 C - 0.7 C with main frequencies between 0.1 Hz and 0.3 Hz were detectable. The microscopic growth rate fluctuated considerably around the average growth rate of 1 mm/min: rates from 4 mm/min to negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies associated with the dopant inhomogeneities correspond quite well with those of the temperature fluctuations and microscopic growth rates. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, to evaluate characteristic temperature amplitudes and frequencies, and to give insight into the instability mechanisms of Marangoni convection in this configuration. The simulations were in good agreement with the experimental values, showing temperature fluctuations with frequencies ? 0.25 Hz and amplitudes up to 1.8 C at a position equivalent to that of the sensor tip in the experiment.

Croell, Arne↗

Measuring orbit responses with oscillating trajectories in the Fermilab Linac

Recording changes in beam transverse positions and longitudinal phase reported by Beam Position Monitors (BPMs) in response to a beam deflection by an upstream dipole corrector or RF cavity phase (orbit response) is a powerful tool for analysis of accelerator optics and assisting with machine tuning. In Fermilab Linac, orbit responses were recorded by oscillating the corrector currents and cavity phases in a sinusoidal manner parasitically during regular operation, simultaneously oscillating up to 19 correctors and 7 cavities at distinct frequencies, providing faster, drift-resistant measurements through frequency-domain analysis. This report describes the technique, including error estimations and consistency checks and shows examples of the measurements.

Shemyakin, Alexander [Fermilab] (ORCID:00000001501↗

Pressure-induced metallization and loss of surface magnetism in FeSi

Single-crystalline FeSi samples with a conducting surface state were studied under high pressure and magnetic field by means of electrical resistance measurements to explore how the bulk semiconducting state and the surface state are tuned by the application of pressure. Here, we found that the energy gap associated with the semiconducting bulk phase begins to close abruptly at a critical pressure of ~10 GPa and the bulk material becomes metallic with no obvious sign of any emergent phases or non-Fermi liquid behavior in temperature dependent electrical resistance in the neighborhood of the critical pressure above 3 K. Moreover, the metallic phase appears to remain at near-ambient pressure upon release of the pressure. Interestingly, the hysteresis in the electrical resistance vs magnetic field curve associated with the magnetically ordered conducting surface state decreases with pressure and vanishes at the critical pressure, while the slope of the electrical resistance vs magnetic field curve, which has a negative value for pressure below the critical pressure, decreases in magnitude with pressure and changes sign at the critical pressure. Thus the conducting surface state and the corresponding two-dimensional magnetic order collapse at the critical pressure where the energy gap of the bulk material starts to close abruptly, revealing the connection between the conducting surface state and the semiconducting bulk state in FeSi.

36 MATERIALS SCIENCE↗

Real-space visualization of a defect-mediated charge density wave transition

Here, we study the coupled charge density wave (CDW) and insulator-to-metal transitions in the 2D quantum material 1T-TaS 2 . By applying in situ cryogenic 4D scanning transmission electron microscopy with in situ electrical resistance measurements, we directly visualize the CDW transition and establish that the transition is mediated by basal dislocations (stacking solitons). We find that dislocations can both nucleate and pin the transition and locally alter the transition temperature T c by nearly ~75 K. This finding was enabled by the application of unsupervised machine learning to cluster five-dimensional, terabyte scale datasets, which demonstrate a one-to-one correlation between resistance—a global property—and local CDW domain-dislocation dynamics, thereby linking the material microstructure to device properties. This work represents a major step toward defect-engineering of quantum materials, which will become increasingly important as we aim to utilize such materials in real devices.

4D-STEM↗

Magnetic field dependence of the martensitic transition and magnetocaloric effects in Ni 49 BiMn 35 In 15

The structural, magnetic, and magnetocaloric properties of the Bi-doped Heusler alloy Ni 49 BiMn 35 In 15 have been investigated using room temperature X-ray diffraction (XRD) and magnetization measurements in a temperature interval of 5-400 K. The alloy at room temperature was found to be in a mixture of a high temperature austenite phase (AP) and a low temperature martensite phase (MP). A drastic shift in the martensitic transition temperature at the rate of 16 K/T from 197 K to lower temperatures was observed. A kinetic arrest phenomenon of the AP was observed in the magnetization and electrical resistivity measurements during field-cooled (FC) measurements at 5T. A metamagnetic behavior characterized by a jump in magnetization in the isothermal M ( H ) curves near T M was observed. The maximum value of the magnetic entropy change and refrigerant capacity at Curie temperature were found to be 5.5 Jkg -1 K -1 and 312 Jkg -1 for μ o Δ H = 5T, respectively. A large magnetoresistance value of -56% was found near the martensitic transition.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Localized 𝑓-electron magnetism in the semimetal Ce 3 ⁢ Bi 4 ⁢ Au 3

Ce 3 ⁢Bi 4 ⁢ Au 3 crystallizes in the same noncentrosymmetric cubic structure as the prototypical Kondo insulator Ce 3 ⁢ Bi 4 ⁢Pt 3 . Here we report the physical properties of Ce 3 ⁢Bi 4 ⁢ Au 3 single crystals using magnetization, thermodynamic, and electrical-transport measurements. Magnetic-susceptibility and heat-capacity data reveal antiferromagnetic order below 𝑇 𝑁 =3.2K. The magnetic entropy 𝑆 mag reaches 𝑅⁢ ln⁡ 2 slightly above 𝑇 𝑁 , which suggests localized 4⁢𝑓 moments in a doublet ground state. Multiple field-induced magnetic transitions are observed at temperatures below 𝑇 𝑁 , which indicate a complex spin structure with competing interactions. Ce 3 ⁢Bi 4 ⁢ Au 3 shows semimetallic behavior in electrical resistivity in contrast to the majority of reported cerium-based 343 compounds which are semiconducting. Electrical-resistivity measurements under hydrostatic pressure reveal a slight enhancement of 𝑇 𝑁 under pressures up to 2.3 GPa, which supports a scenario wherein Ce 3 ⁢Bi 4 ⁢Au 3 belongs to the far left of the Doniach phase diagram dominated by Ruderman-Kittel-Kasuya-Yosida interactions. Using realistic many-body simulations, we confirm the semimetallic electronic structure of Ce 3 ⁢Bi 4 ⁢ Au 3 and quantitatively reproduce its local moment behavior in the paramagnetic state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High performance S-band horn antennas for radiometer use

Horn antennas of four types: pyramidal corrugated, conical corrugated, pyramidal dual mode and conical dual mode, have been constructed and evaluated for use as S-band radiometer antennas. Each of the structures is described and radiation patterns and impedance and resistive loss measurements including a layer of foreign material on a thin radome, are presented. A precision method for determining reflection losses is described using a multiprobe reflectometer technique. The same technique is also applied to the measurement of resistive losses by closing the ends of the antennas with short circuit plates and determining the losses from an accurate measurement of the reflection coefficient. The radiation patterns were recorded with the aid of a real-time digital computer. The stored patterns were then processed to yield gain and beam efficiency. It was concluded that it is possible to design a highly efficient antenna for radiometer use and to measure its parameters precisely. However, it was found that it is necessary to modify the conventional definition of beamwidth somewhat if this term is to be meaningful for radiometer applications.

Caldecott, R.↗

Electrically-driven IMT and volatile memristor behavior in NdNiO 3 films

Abstract Transition metal oxides with insulator-metal transitions (IMTs) are uniquely suited for volatile memristor devices that mimic the spiking of biological neurons. Unlike most non-volatile memristors, which often operate via ion migration into filaments, volatile devices utilize a reversible phase change that returns to a ground state in the absence of applied stimulus. In these devices, Joule heating triggers the IMT and changes the bulk resistivity rather than influencing conduction through defects, as in previous studies. This volatile resistive switching behavior has previous been leveraged in niobium and vanadium oxides, but not in rare-earth nickelates, despite their tunable transition temperatures. This study demonstrates an electrically driven IMT in the prototypical rare-earth nickelate, NdNiO 3 , in large area devices. While previous work examining the electrically-driven IMT in NdNiO 3 suggests defect-dominated conduction, this study shows clear s-type negative differential resistance (NDR) consistent with temperature-dependent resistivity measurements. The NDR peak-to-valley voltage scales linearly with temperature as expected for conductivity pathways dominated by bulk IMT behavior. Unlike other transition metal oxides, which are modeled using the insulator-metal phase fraction as the internal state variable, a thermoelectric model with temperature as the internal state variable is found to more accurately describe the current–voltage characteristic of NdNiO 3 volatile memristors. Overall, we report the synthesis, fabrication, and characterization of NdNiO 3 volatile memristors with resistivity dominated by bulk-like IMT behavior which is scalable and not dependent upon oxygen vacancy migration or defect mediated conduction pathways.

36 MATERIALS SCIENCE↗

Using In-Situ Deposition of Metallic Thin Films on Mars to Monitor Atmospheric H20

We describe the use of a novel sensor, designed to characterize the reactive nature of the Martian atmosphere, to also characterize the instantaneous abundance of atmospheric H,O. The sensor deposits, in situ, a thin silver film onto a sapphire substrate and monitors oxidation by measuring resistance of the Ag film during both deposition and subsequent oxidation [1,2]. . The evaporation source is placed in the center of a hollow, open-ended tube. On flash heating the source, evaporated metallic silver rapidly reacts with oxidizing gases in the tube, depositing on the tube walls as a resisitive Ag oxide film. Unoxidized silver deposits over the Ag oxides, once the oxidizing gases in the vicinity of the source have been consumed. Since the ends of the tube are open, atmospheric gases in the tube cause a time delay as the evaporated silver initially reacts with the available O2, and H2O; once oxidizing gases in the tube are significantly depleted, a silver film closes the chemiresistor circuit. In principle this operation mode provides a repeatable measure of the variable H2O abundance, since O2, levels are constant in the atmosphere. To explore the utility of the instrument as an H2O sensor, predict its behavior, and identify possible failure modes, we developed a numerical model of the instrument, and exercised it for Mars conditions. The model predicts the behavior of the electrical circuit, the temperature dependence of resistivity for each component, and the resultant Joule heating. The model balances Joule heating against radiation, sensible heat loss to ambient CO2, and, latent heat loss from sublimating Ag. The flux of Ag atoms from the source is tracked continuously. In the gas phase, the number density of Ag, O2, and H2O is calculated, along with their reaction rates on collision. The model suggests that Ag substantially depletes H2O only near the center of the tube. The model supports the hypothesis that the onset of high conductivity between the A u electrodes is a function of the H2O abundance in the ambient gas, but only to a limit; when H2O abundances are buffered at or above 240K (an H2O abundance that would not have occurred on Mars), metallic Ag never deposits in excess of Ago, and the circuit does not close. A significant difference in the Mars simulation is that the Ag source sublimates more quickly, primarily because of differences in sensible heat fluxes from the source. This allows subsequent heating of the W filament used to support the Ag source. Had the originally-designed experimental sequence been carried out on Mars, the filament might have melted, making subsequent investigations impossible.

Zent, A. P.↗

Superconducting ceramics in the Bi1.5SrCaCu2O sub x system by melt quenching technique

Bi sub 1.5 SrCaCu sub 2 O sub x has been prepared in the glassy state by rapid quenching of the melt. The kinetics of crystallization of various phases in the glass have been evaluated by a variable heating rate differential scanning calorimetry method. The formation various phases on thermal treatments of the glass has been investigated by powder X-ray diffraction and electrical resistivity measurements. Heating at 450 C formed Bi sub 2 Sr sub 2 CuO sub 6, which disappeared on further heating at 765 C, where Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 formed. Prolonged heating at 845 C resulted in the formation of a small amount of a phase with T sub c onset of approx. 108 K, believed to be Bi sub 2 Sr sub 2 Ca sub 2 Cu sub 3 O sub 10. This specimen showed zero resistivity at 54 K. The glass ceramic approach could offer several advantages in the fabrication of the high-T sub c superconductors in desired practical shapes such as continuous fibers, wires, tapes, etc.

Bansal, Narottam P.↗

Superconducting glass-ceramics in the Bi-Sr-Ca-Cu-O system

Differential thermal analysis, XRD, SEM, and resistivity measurements, have been used to study the recrystallization during various heat treatments of a Bi1.5SrCaCu2O(z) glass obtained by rapid quenching from the melt. Heating at 450 C formed the Bi(2+x)Sr(2-x)-CuO(z) solid solution designated 'R'. Between 765 and 845 C, R reacts slowly with the glass to form the 80 K superconductor Bi2(Sr,Ca)3Cu2O(z), together with CuO. Heating for 7 days at the higher temperature, followed by slow cooling, raised the temperature of zero resistance to 77 K.

De Guire, Mark R.↗

New precious metal containing normal spinels: LiRhRu 1-x Ir x O 4 , LiFeIr 1-x Ru x O 4 , and LiCoIr 1-x Ru x O 4

Large spin-orbit-coupled cations in geometrically frustrated crystal structures have the most suitable setting for exploring novel exotic states of matter. Spinel oxides (AM 2 O 4 ) are well-known examples of geometrically frustrated systems. In this study, we report for the first time the synthesis of compositions LiRhRu 1-x Ir x O 4 (x = 0–0.5), LiFeIr 1-x Ru x O 4 (x = 0–0.5), and LiCoIr 1-x Ru x O 4 (x = 0–0.3) containing precious metal cations on edge-sharing octahedral M-sites, and systematically investigate their magnetic and electrical properties. 57 Fe Mössbauer spectroscopy revealed that iron is trivalent in all LiFeIr 1-x Ru x O 4 solid solutions. Magnetic measurements indicate deviations from theoretical spin-only magnetic moment values, indicating the influence of spin-orbit coupling owing to the presence of 4d and 5d block elements. The LiFeIr 1-x Ru x O 4 series shows spin-glass-like freezing behavior with T g ≈ 20 K, and a small frustration index (f ≈ 1-2), indicating that the frustration originates from site disorder. LiRhRu 1-x Ir x O 4 and LiCoIr 1-x Ru x O 4 exhibit strongly geometrically frustrated magnetism. Electrical resistivity measurements as a function of temperature indicate that all phases are semiconducting. Seebeck coefficient measurements show that LiRhRu 1-x Ir x O 4 and LiFeIr 1-x Ru x O 4 are p-type semiconductors with holes as the major charge carriers. A sign reversal of the Seebeck coefficient indicates both holes and electrons as carriers for LiCoIr 1-x RuxO 4 (x = 0–0.2), but only holes as major carriers for x = 0.3. Here, the Seebeck coefficient and power factor increase drastically in the LiRhRu 1-x Ir x O 4 solid solution with Ir substitution, reaching a maximum of ≈ +125 μV/K and ≈2.3×10 -6 W/mK 2 at ∼650 K for x = 0.5.

Charge carriers↗

Synthesis and characterization of high-Tc superconductors in the Tl-Ca-Ba-Cu-O system

Both Tl2Ca2Ba2Cu3O10 and TlCa3BaCu3O8.5 are investigated for superconductivity as a function of the sintering temperature, time, atmosphere, and quench rate in an effort to synthesize the high-Tc superconducting phase in the thallium system. The samples are characterized by electrical resistivity measurements, X-ray diffraction, and scanning electron microscopy. Samples of starting composition Tl2Ca2Ba2Cu3O10 fired in air at 860-900 C and rapidly quenched show a Tc of 96-107 K. In contrast, specimens of starting composition TlCa3BaCu3O8.5 when baked at 900 C and slowly cooled in oxygen superconduct at 116 K and above and consist of Tl2Ca2Ba2Cu3O(10+x) as the dominant phase. The results also show that, in contrast to the case of YBa2Cu3O(7-x), doping with a small concentration of fluorine sharpens the resistive transition and produces a large Tc increase in thallium-based superconductors.

Bansal, Narottam P.↗

Room temperature measurements of electrical resistivity and thermal conductivity of various graphites

Room temperature thermal conductivity measurements were completed on 10 graphite samples selected from the lot of 120 to uniformly span the range of electrical resistivity values. From these data and other measurements a thermal conductivity-electrical conductivity correlation was established to predict room temperature thermal conductivity values for the graphite samples. The correlation, expressed by a parabolic equation, represents available thermal and electrical conductivity data to about + or - 8%.

Mcelroy, D. L.↗