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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Thermodynamics of quantum measurement and Maxwell's demon's arrow of time

Here, we discuss the thermodynamic aspects of a single qubit based device, powered by weak quantum measurements, and feedback controlled by a quantum Maxwell's demon. We discuss both discrete and time-continuous operation of the measurement based device at finite temperature of the reservoir. In the discrete example where a demon acquires information via discrete weak measurements, we find that the thermodynamic variables including the heat exchanged, extractable work, and the entropy produced are completely determined by an information theoretic measure of the demon's perceived arrow of time. We also discuss a realistic time-continuous operation of the device where the feedback is applied after a sequence of weak measurements. In the time-continuous limit, we derive the exact finite-time statistics of work, heat and entropy changes along individual quantum trajectories of the quantum measurement process, and relate them to the demon's arrow of time.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

3-D Prismatic Packaging Methodologies for Wide Band Gap Power Electronics Modules

In a power module the parasitic inductance limits the dynamic high-frequency performance, and the area of the cooling surfaces limits the power capability. This paper presents a new 3D power electronic design methodology based on the concept of mutual inductance cancellation and multi-sided heat transfer. New 3D prismatic packaging concepts are proposed for Wide Band Gap (WBG) power devices, where the devices can be mounted at acute angles to adjacent interconnects or other devices. Discussion is given on electrical and thermal path optimization in a 3D space. To validate the 3D prismatic packaging methodology, a 1200V/50A SiC half-bridge power module is fabricated and tested for electrical and thermal performance and results are compared with simulations. The power density calculated for the module is 12 kW/in3 (including heatsink) and shows a 31.3% inductance reduction compared to a 2D planar module. Finally, design guidance suggested for utilizing prismatic structures is provided, together with suggested future work in the area. This paper presents the first reported true 3D power module.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1984

Power

The space station requires an increase in power or energy of at least several orders of magnitude compared to previous space missions. With the requirement up in the range of 10 kilowatt hours, this obviiously requires the development of new technology. Although the power area is very well integrated in the spacecraft itself, it represents a diverse set of components necessary for energy conversion, electronics, and energy distribution. Considerable work is ongoing at NASA Lewis in the power devices development area, including transformers, large area solid-state chips, transistors, and fast recovery diodes. This work is oriented toward eventual application to both AC and DC power conversion approaches. In the energy storage area, there are many options available to fit into the space station representing various degrees of risk and leverage combination, such as the near-term integral-pressure-vessel nickel hydrogen battery, an advanced Ni-H2 battery concept, and the regenrative hydrogen-oxygen system utilizing essentially the Shuttle orbiter type of fuel cell.

Corbett, R.↗
NASA NTRS1995

Gallium phosphide energy converters

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Sims, P. E.↗
NASA NTRS2012

The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

Patterson, Richard L.↗
NASA NTRS1986

Motor Starters

The power factor controller (PFC) was invented by a NASA engineer. It matches voltage with a motor's actual need by sensing shifts in the relationship between voltage and current flow. With the device, power can be trimmed as much as 65%. Intellinet adopted this technology and designed "soft start" and "load-responsive" control modes to start engines gradually and recycle voltage without reducing motor speed. Other features are lower motor heat and faster fault identification.

Source record↗
NASA NTRS2006

Acceleration of Stereo Correlation in Verilog

To speed up vision processing in low speed, low power devices, embedding FPGA hardware is becoming an effective way to add processing capability. FPGAs offer the ability to flexibly add parallel and/or deeply pipelined computation to embedded processors without adding significantly to the mass and power requirements of an embedded system. This paper will discuss the JPL stereo vision system, and describe how a portion of that system was accelerated by using custom FPGA hardware to process the computationally intensive portions of JPL stereo. The architecture described takes full advantage of the ability of an FPGA to use many small computation elements in parallel. This resulted in a 16 times speedup in real hardware over using a simple linear processor to compute image correlation and disparity.

machine vision↗
NASA NTRS1995

Impact of CMOS Scaling on Single-Event Hard Errors in Space Systems

Applications of highly scaled devices in space applications are shown to be limited by hard errors from cosmic rays. Hard errors were first observed in 0.8 (micro)m DRAMs. For feature sizes below 0.5 (micro)m, scaling theory predicts that low power devices will have much lower hard error rates than devices optimized for high speed.

CMOS Scaling↗
NASA NTRSDate not supplied

High Temperature Devices for Aerospace Applications

This presentation will overview important new capabilities and benefits that next-generation higher temperature electronics promise for a variety of aerospace systems and missions. Initial aerospace infusions of higher temperature electronics to be discussed include jet engines and the prolonged robotic exploration of the Venus surface. Complete redesign of systems compared to prior conventional electronics practices would yield the most revolutionary benefits. However, the inherent higher risk and expense associated with new technology adoption will likely drive a more evolutionary technology infusion process, especially since flight qualification demands large safety margins and testing that ensures reliable operation for far longer than actual mission duration. SiC pn-junction based devices are inherently capable of the most durable operation at the highest application temperatures compared other transistor technologies, but such integrated circuits (ICs) will never achieve integration levels near today’s silicon ICs. Extreme temperature high-power devices will also be de-rated compared to room-temperature performance. While the high temperature market will always be small compared to the conventional temperature mass-market, compatibility and leveraging of existing foundry manufacturing is vital to the establishment of a sustainable high temperature electronics ecosystem sufficient to significantly improve aerospace systems.

High Temperature↗
DOE OSTI2021

Design of High Power Density 100 kW Surface Permanent Magnet Machine with No Heavy Rare Earth Material Using Current Source Inverter for Traction Application

Surface permanent magnet (SPM) machines are appealing candidates for traction applications because of high power density and high efficiency. Rare-earth magnets deliver high performance but raise concerns about material supply dependability, particularly if they use heavy rare-earth materials. This paper presents the design of a high-performance SPM machine without any heavy rare-earth material that is optimized specifically for a current-source inverter (CSI) traction drive. This machine is designed for a constant-power speed ratio (CPSR) of 3. A genetic algorithm has been performed to achieve a target of 50 kW/L active power density at speeds up to 20,000 rpm. Operation at a peak line-to-line voltage of 800 V can be achieved using 1200 V power devices with a safety margin. The predicted electromagnetic and rotor structural performance characteristics are presented using both analytical and finite element analysis (FEA) results.

(CPSR)↗
DOE OSTI2022

Software Development for Data Visualization and Analysis of PN-Diodes & MOSFET Devices

The U.S. Department of Energy has a broad mission to ensure the nation’s security by addressing ongoing environmental challenges, developing novel energy production technologies, and mitigating nuclear security concerns. These efforts benefit from developing more effective semiconductor materials and devices. The research discussed in this report aims to further the development of these new electronics by improving implementations of vertical device structures, which offer theoretically better performance compared to lateral structures. Specifically, it reviews the background and development of a new and easy-to-use program for data processing and analysis from experiments run on vertical gallium nitride power devices. Current vertical structures fall short in critical performance metrics, such as On-Resistance and Breakdown Voltage, due to poor management of the device’s electric field. Junction termination extensions, or JTEs, are a field management technique that increases a device’s resilience to expected failure modes by controlling its surface electric fields. Each JTE design requires significant experimental validation, consisting of hundreds of tested devices, each outputting an enormous set of data points. The new software includes multiple methods of filtering large sets of device testing data to identify and remove flawed devices, automate device analyses, and provide statistical breakdowns for four metrics used to define the effectiveness of the JTE and the current carrying capacity of the device. These results can then be related back to fabrication techniques and device design, and in the future, be combined with processing simulations to further improve our understanding of the JTE mechanisms.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1991

Thrust stand for high-power electric propulsion devices

This paper describes a new high-power thrust stand developed for use with high-power (up to 250 kW) magnetoplasmadynamic (MPD) thrusters, which is installed in a high-vacuum MPD facility at Lewis Research Center. The design of the stand is based on inverted pendulum configuration, with the result of large displacements and high resolution. Calibration results showed that thrust measurements were linear and repeatable to within a fraction of 1 percent. The thrust stand was used for testing water-cooled MPD thrusters at power levels up to 125 kW. The thruster, however, is quite well suited for testing other types of electric propulsion devices.

Haag, T. W.↗
NASA NTRS2011

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

Patterson, Richard L.↗
DOE OSTI2020

A New Configuration of Paralleled Modular ANPC Multilevel Converter Controlled by an Improved Modulation Method for 1 MHz, 1 MW EV Charger

In this work, a new configuration of the modular multilevel converter (MLC) based on the parallel connection of three-level active-neutral-point-clamped (3L-ANPC) cells as well as its improved modulation method is proposed for 1 MHz, 1 MW electric vehicle (EV) megacharger. In the proposed paralleled modular ANPC-MLC, only six high-frequency silicon carbide (SiC) power switches operating at 333 kHz are required to generate 1 MHz switching frequency spectrum. Moreover, the operating voltage of all power devices is halved, the magnitude of the first switching frequency harmonic cluster is decreased by the factor of five, and the load current is equally distributed between the 3L-ANPC legs by employing the proposed improved modulation method. Hence, the modularity, efficiency, and power density of the proposed converter are notably increased, whereas the value of passive components and the overall switching loss are remarkably decreased. In addition, an optimized design of the one 3L-ANPC cell of the proposed paralleled modular ANPC-MLC for 1 MHz, 1MW EV megacharger using Ansys SIwave, Icepak, and Q3D finite element method platforms is presented and analyzed in detail. The provided experimental results of the down-scaled setup verify the feasibility and viability of the proposed configuration as well as its improved switching pattern.

42 ENGINEERING↗
DOE OSTI2023

1 kV Self-Aligned Vertical GaN Superjunction Diode

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R ON ) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R dr ) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

42 ENGINEERING↗
DOE OSTI2024

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage ( BV ) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Physics↗
NASA NTRS1982

Design, production, and testing of field effect transistors

Cryogenic MOSFETS (CRYOFETS), specifically designed for low temperature preamplifier application with infrared extrinsic detectors were produced and comparatively tested with p-channel MOSFETs under matched conditions. The CRYOFETs exhibit lower voltage thresholds, high source-follower gains at lower bias voltage, and lower dc offset source voltage. The noise of the CRYOFET is found to be 2 to 4 times greater than the MOSFET with a correspondingly lower figure of merit (which is established for source-follower amplifiers). The device power dissipation at a gain of 0.98 is some two orders of magnitude lower than for the MOSFET. Further, CRYOFETs are free of low temperature I vs V character hysteresis and balky conduction turn-on effects and operate effectively in the 2.4 to 20 K range. These devices have promise for use on long term duration sensor missions and for on-focal-plane signal processing at low temperatures.

Sclar, N.↗